• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1425_1426
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• 2009

In this study, commercially available polyethylene terephthalate(PET), which is widely used as a substrate of flexible electronic devices, was modified by dielectric barrier discharge(DBD) method in an air condition at atmospheric pressure, and aluminium - doped zinc oxide (ZnO:Al) transparent conducting film was deposited on PET substrate by r. f. magnetron sputtering method. Surface analysis and characterization of the plasma-treated PET substrate was carried out using contact angle measurements, X-ray Photoelectron Spectroscopy(XPS) and Atomic Force Microscopy (AFM). Especially the effect of surface state of PET substrate on some important properties of ZnO:Al transparent conducting film such as electrical and morphological properties and deposition rate of the film, was studied experimentally. The results showed that the contact angle of water on PET film was reduced significantly from $62^{\circ}$ to $43^{\circ}$ by DBD surface treatment at 20 min. of treatment time. The plasma treatment also improved the deposition rate and electrical properties. The deposition rate was increased almost linearly with surface treatment time. The lowest electrical resistivity as low as $4.97{\times}10^{-3}[\Omega-cm]$ and the highest deposition rate of 234[${\AA}m$/min] were obtained in ZnO:Al film with surface treatment time of 5min. and 20min., respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.200-200
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• 2013

기존 메모리 반도체에 비교해 빠른 재생속도와 높은 집적도, 비휘발성 등의 특성을 가지는 MRAM (Magnetic Random Access Memory)은 DRAM, flash memory 등을 대체할 수 있는 차세대 기억 소자로서 CoFeB/MgO/CoFeB로 구성된 한 개의 MTJ (Magnetic Tunnel Junction)를 단위 메모리로 사용한다. 이 MTJ 물질들은 고밀도 플라즈마를 이용한 건식 식각공정시 Cl2, BCl3 등과 같은 chlorine 을 포함한 가스를 이용하여 왔으나 식각 후 sidewall에서 발생하는 부식과 식각 선택비 확보의 어려움 등으로 마스크 물질에 제약을 받고 소자 특성이 감소하게 되는 등의 문제가 있다. 따라서 이러한 식각 문제점을 해결하기 위한 대안으로 noncorrosive 가스인 CO/NH3, CH3OH, CH4 등을 이용한 MTJ 식각 연구가 진행되어 오고 있으며 이중 CO/NH3 혼합가스는 부식성이 없고 hard mask와의 높은 선택비를 가지는 기체로 CO gas에 NH3 gas를 첨가하게 되면 etch rate이 증가하는 특성을 보인다. 또한 rf pulse-biased power를 이용하여 이온의 입사를 시간에 따라 제어함으로써 pulse off time 때 etch gas와 MTJ 물질간의 chemical reaction을 향상시킬 수 있다. 따라서 본 연구에서는 CO/NH3 혼합가스를 이용하여 다양한 rf pulse-biased power 조건에서 MTJ 물질인 CoFeB, MgO와 hard mask 물질인 W을 식각 한 뒤 식각특성을 분석하였으며 MTJ surface의 chemical binding state, surface roughness 측정을 진행하였다. 식각 샘플의 측정은 Alpha step profiler, XPS (X-ray Photoelectron Spectroscopy), AFM (Atomic Force Microscopy)를 통해 진행되었다. Time-averaged pulse bias에서는 duty ratio가 감소할수록 etch rate의 큰 감소 없이 CoFeB/W, MgO/W 물질의 etch selectivity가 향상됨을 확인할 수 있었으며 pulse off time 구간에서의 chemical reaction 향상으로 인해 식각부산물의 재증착이 감소하고 CoFeB의 surface roughness가 감소하는 것을 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.125-128
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• 1998

Electroluminescent(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. One of the problems of such device is a lifetime, where a degradation of the cell is possibly due to an organic layer's thickness, morphology and interface with electrode. In this study, light-emitting organic electroluminescent devices were fabricated using Alq$_3$(8-hydroxyquinolinate aluminum) and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl)-[1-1'-biphenyl]-4,4'-diamine).Where Alq$_3$ is an electron-transport and emissive layer, TPD is a hole-transport layer. The cell structure is ITO/TPD/Alq$_3$/Al and the cell is fabricated by vacuum evaporation method. In a measurement of current-voltage characteristics, we obtained a turn-on voltage at about 9 V. And we used other buffer layer of PPy(Polypyrrole) with ITO/PPy/TPD/Alq$_3$/Al structure. We observed a surface morphology by AFM(Atomic Force Microscopy), UV/visible absorption spectrum, and PL(Photoluminescence) spectrum. We obtained the UV/visible absorption peak at 358nm in TPD and at 359nm in Alq$_3$, and at 225nm and the PL peaks at 410nm in TPD and at 510nm in Alq$_3$ and at 350nm. We also studied EL spectrum in the cell structure of ITO/TPD/Alq$_3$/Al and ITO/PPy/TPD/Alq$_3$/Al and we observed the EL spectrum peak at 510nm from our cell

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.06a
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• pp.14-14
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• 2001

Nitride films such as TiN, CrN etc. deposited on glass by PVD processes have been developed for many industrial applications. These nitride films deposited on glass were widely used for not only decorative and optical coatings but also wear and corrosion resistance coatings employed as dies and molds made of glass for the example of lens forming molds. However, the major problem of nitride coatings on glass by PVD process is non-uniform film owing to pin-hole and micro crack. It is estimated that nonuniform coating is influenced by a different surface energy between metal nitrides and glass due to binding states. In this work, therefore, for the evaluation of nucleation and growth mechanism of nitride films on glass TiN and CrN film were synthesized on glass with various nitrogen partial pressure by unbalanced magnetron sputtering. Prior to deposition, for the examination of relationship between surface energy and film microstructure plasma pre-treatment process was carried out with various argon to hydrogen flow rate and substrate bias voltage, duty cycle and frequency by using pulsed DC power supply. Surface energy owing to the different plasma pre-treatment was calculated by the measurement of wetting angle and surface conditions of glass were investigated by X-ray Photoelectron Spectroscopy(XPS) and Atomic Force Microscope(AFM). The microstructure change of nitride films on glass with increase of film thickness were analyzed by X-Ray Diffraction(XRD) and Scanning Electron Microscopy(SEM).

• Macromolecular Research
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• v.13 no.2
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• pp.135-140
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• 2005

Poly(vinyl alcohol) (PVA) membranes crosslinked with poly(acrylic acid-co-maleic acid) (PAM) were prepared to investigate the effect of aging on their morphology by swelling them for up to 7 days. PAM was used both as a crosslinking agent and as a donor of the hydrophilic-COOH group. A $30 wt\%$ weight loss of the dry membrane was observed in the swelling test after 6 days. The surface of the membrane was dramatically changed after the swelling test. The surface roughness of the PVA/PAM membrane was increased, as determined by atomic force microscopy (AFM). The swelling loosened the polymer structure, due to the release of the unreacted polymer and the decomposition of the ester bond, thereby resulting in an increase in the free volume capable of containing water molecules. The water molecules present in the form of free water were determined by differential scanning calorimetry (DSC). The fraction of free water increased with increasing swelling time. The swelling of the membrane may provide space for the transport of protons and increase the mobility of the protonic charge carriers. The proton conductivity of the membranes measured at T= 30 and $50^{\circ}C$ was in the range of $10^{-3} to 10^{-2} S/cm$, and slightly increased with increasing swelling time and temperature.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.239-239
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• 2006

In the present study, we synthesized CBDA-FDA and its analogue, poly(4,4' -(9,9-fluorenyl)diphenylene pyromellitimide) (PMDA-FDA), and then investigated quantitatively the orientational distributions of the polymer chain segments in the surfaces of their films by using linearly polarized Fourier transform infrared (FTIR) spectroscopy and optical retardation analysis. We also examined the films' surface topographies using high spatial resolution atomic force microscopy (AFM). Further, rubbed films were used to assemble antiparallel and $90^{\circ}-twisted$ nematic (TN) LC cells, and the alignment behaviors, pretilt angles and anchoring energies of the LC molecules in the cells were determined. The films were found to have very interesting surface morphologies and LC alignment behaviors, which have not previously been reported. The observed LC alignments, pretilt angles and anchoring energies are discussed by taking into account the interactions of the LC molecules with the oriented polymer chain segments and the surface morphologies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.112-112
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• 2008

박막형 태양전지에 관한 연구는 1954년 D.C. Reynolds 가 단결정 CdS 에서 광기전력을 발견하면서부터 시작되었다. 고효율 단결정 규소 태양전지가 간편하게 제작되고 박막형 태양전지의 수명문제가 대두되어 한때는 연구가 중단되어지기도 하였으나, 에너지 문제가 심각해지면서 값이 저렴하고 넓은 면적에 쉽게 실용화 할 수 있는 박막형 태양전지에 많은 관심을 가지게 되었다. 박막형 태양전지에 사용되는 CdS는 II-VI 족 화합물 반도체로서 에너지금지대폭이 2.42eV인 직접천이형 n-type 반도체로서 대부분의 태양광을 통과시킬 수 있으며 가시광선을 잘 투과시키고 낮은 비저항으로서 광흡수층인 CdTe/$CuInSe_2$ 등과 같이 태양전지의 광투과층(윈도레이어)으로 널리 사용되고 있다. 이러한 이종접합 박막형 태양전지의 효율을 높이기 위해선 윈도레이어 재료인 CdS 박막의 낮은 전기 비저항치와 높은 광 투과도 값이 요구되어지고 있다. CdS 박막의 제작방법으로는 spray pyrolysis법, 스크린프린팅, 소결법, puttering법, 전착법, CBD(chemical bath deposition)법 및 진공증착법 등의 여러 가지 방법들이 보고되었다. 이 중 sputtering의 경우, 다른 방법들에서는 얻기 어려운 매우 얇은 두께의 박막 증착이 가능하며, 균일성 또한 우수하다. 또한 대면적화가 용이하여 양산화 기술로는 다른 제조 방법들에 비해 많은 장점을 가지고 있다. 따라서 본 연구에서는 sputtering에 의해 증착한 CdS의 박막에 광투과도 등의 향상을 위하여 CMP( chemical mechanical polishing) 공정을 적용하여 표면 특성을 개선하고자 하였다. 그 기초적인 자료로서 CdS 박막의 CMP 공정 조건에 따른 연마율과 비균일도, 표면 특성 등을 ellipsometer, AFM(atomic force microscopy) 및 SEM(scanning electron microscope) 등을 활용 하여 분석하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.120-120
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• 2008

We demonstrate epitaxial growth of ZnO thin films on 4H-SiC(0001) substrates using pulsed laser deposition (PLD). ZnO and SiC have attracted attention for their special material properties as wide band gap semiconductors. Especially, ZnO could be applied to optoelectronic applications such as light emitting devices and photo detectors due to its direct wide bandgap (Eg) of ~3.37eV and large exciton binding energy of ~60meV. SiC shows a good lattice matching to ZnO compared with other commonly used substrates and in this regard SiC is a good candidate as a substrate for ZnO. In this work, ZnO thin films were grown on 4H-SiC(0001) substrates by PLD using an Nd:YAG laser with a 355nm wavelength. The crystalline properties of the films were evaluated by x-ray diffraction (XRD) $\theta-2\theta$, rocking curve and pole figure measurements using a high-resolution diffractometer. The surface morphology of the films was studied by atomic force microscopy (AFM).

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.391.2-391.2
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• 2014

Solution-processible hybrid bipolar field effect transistors (HBFETs) with balanced hole and electron mobilities were fabricated using a combination of the organic p-type poly (3-hexylthiophene) (P3HT) layer and inorganic n-type ZnO material. The hole and electron mobilities were first optimized in single layer devices by using acetonitrile as a solvent additive to process the P3HT and annealing to process the ZnO layer. The highest hole mobility of the P3HT-only-devices with 5% acetonitrile was 0.15 cm2V-1s-1, while the largest electron mobility was observed in the ZnO-only-devices annealed at $200^{\circ}C$ and found to be $7.2{\times}10-2cm2V-1s-1$. The inorganic-organic HBFETs consisting of P3HT with 5% acetonitrile and ZnO layer annealed at $200^{\circ}C$ exhibited balanced hole and electron mobilities of $4.0{\times}10-2$ and $3.9{\times}10-2cm2V-1s-1$, respectively. The effect on surface morphology and crystallinity by adding acetonitrile and thermal annealing were investigated through X-ray diffraction and atomic force microscopy (AFM). Our findings indicate that techniques demonstrated herein are of great utility in improving the performance of inorganic-organic hybrid devices

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.376.1-376.1
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• 2014

그래핀은 차세대 2차원 물질로서 지금까지 활발히 연구되어 왔으나 밴드갭이 없기 때문에 전자소자로서의 응용이 매우 제한적이다. 최근에 그래핀을 대체할 수 있는 물질로서 Transition Metal Dichalcogenides (TMDs)가 주목을 받고 있다. 특히, TMDs 중에서 $MoS_2$는 bulk일 때 indirect한 1.2 eV인 밴드 갭을 갖고 있으나, layer가 줄어들면서 direct한 1.8 eV인 밴드갭을 가진다. 국내외 여러 연구 그룹에서 $MoS_2$를 이용하여 제작한 Field Effect Transistor (FET)는 high-$\small{K}$ gate가 산입되지 않은 경우에 on-off ratio와 mobility가 각각 $10^6$와 약 $3cm^2/Vs$로 나타나고 있다. 이와 같이 아주 우수한 전기적, 광학적 특성을 갖는 소자 응용성을 가지고 있다. 최근까지의 연구결과들은 대부분 mechanical exfoliation method (MEM) 로 제작된 $MoS_2$ monolayer를 이용하였으나, 이 방법은 large scale 및 layer controllable에는 적합하지 않다. 본 연구에서는 대면적의 집적회로 응용에 적합한 chemical vapor deposition법을 이용하여 $MoS_2$를 성장하였다. 높은 결정성을 위해 sulphur (powder purity 99.99%)와 molybdenum trioxide(powder purity 99.9%)를 이용하고, Ar 가스 분위기에서 sulphur powder 및 molybdenum trioxide powder를 각각 $130^{\circ}C$ 및 $1000^{\circ}C$로 유지하며 $MoS_2$ 박막을 성장하였다. 성장된 $MoS_2$ 박막은 Atomic force Microscopy (AFM)을 통해 박막의 단차와 roughness을 확인하였다. 또한, X-ray Diffraction (XRD) pattern 분석으로 박막의 결정성을 확인하였으며, Raman Spectroscopy, X-ray Photoelectron Spectroscopy (XPS), Photoluminescence (PL) 측정으로 광학적 특성을 분석하였다.