• 한국재료학회지
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• 제14권7호
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• pp.505-510
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• 2004

The glass-ceramic based on LAS($Li_{2}O-Al_{2}O_3-SiO_{2}$) system was observed using SEM(Scanning Electric Microscopy) and AFM(Atomic Force Microscopy) and it was expected to get a correlation between the crystal size and the surface roughness through the result. At heat treatment conditions (the nucleation: $740\~800^{\circ}C$, the crystal growth: $900\~1150^{\circ}C$), the crystal size was increased from 72 to 450 nm so that the mean of surface roughness was also risen from 0.8 to 6.3 nm. Based on the results, the surface roughness of glass-ceramic is controlled by the factors, crystal size, crystallines, and the condition of heat treatment.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.288-288
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• 2006

Natural rubbers (NR) reinforced by multi-wall carbon nanotubes (MWCNT) was found to show extraordinary improvement of mechanical property. We speculated that this was owing to the interfacial phase that surrounded CNT and investigated about the phase by atomic force microscopy (AFM). Using force modulation mode and force-distance curve analyses, we succeeded in obtaining the information of its nanometer-scale rheological property. We found that was actually surrounded by the interfacial phase, that had softer modulus than NR matrix.

• Korean Chemical Engineering Research
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• 제47권4호
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• pp.395-402
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• 2009

원자힘현미경은 초미세크기의 물리적 특성을 규명하기 위한 수단으로서 지지 지질층의 물리적특성 규명에 이용되어 왔다. 원자힘현미경이 출현하기 이전에는 초미세관점에서 지지 지질층에서 발생하는 물리적 현상의 관찰이 전무하였다. 이 현미경은 탐침바늘(Cantilever)로 표면을 주사(Scanning)함으로써 표면의 초미세 형상(Morphology)을 제공하고 표면에 접근(Approach)했다가 후퇴(Retraction)하는 탐침바늘의 거동을 모니터링함으로써 힘곡선(Force Curve)을 나타낼 수 있다. 형상 파악을 통해 지지 지질층의 구조와 막 단백질이 지질층의 구조에 미치는 영향을 밝히는 연구가 진행되어 왔으며, 힘곡선을 통하여 지지 지질층 표면 특성-기계적 정전기적 특성-에 대한 연구가 진행되었다. 본 총설에서는 원자힘현미경을 이용하여 현재까지 진행된 지지 지질층의 구조와 표면 특성 연구에 대하여 소개하고 향후 연구 진행 방향에 대하여 논의하고자 한다.

• 한국전기전자재료학회논문지
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• 제23권10호
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• pp.747-751
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• 2010

In the study, the characteristics of the etched Zinc oxide (ZnO) thin films surface, the etch rate of ZnO thin film in $Cl_2/BCl_3/Ar$ plasma was investigated. The maximum ZnO etch rate of 53 nm/min was obtained for $Cl_2/BCl_3/Ar$=3:16:4 sccm gas mixture. According to the x-ray diffraction (XRD) and atomic force microscopy (AFM), the etched ZnO thin film was investigated to the chemical reaction of the ZnO surface in $Cl_2/BCl_3/Ar$ plasma. The field emission auger electron spectroscopy (FE-AES) analysis showed an elemental analysis from the etched surfaces. According to the etching time, the ZnO thin film of etched was obtained to The AES depth-profile analysis. We used to atomic force microscopy to determine the roughness of the surface. So, the root mean square of ZnO thin film was 17.02 in $Cl_2/BCl_3/Ar$ plasma. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.327-330
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• 2000

The scanning Maxwell-stress microscopy (SMM) is a dynamic noncontact electric force microscopy that allows simultaneous access to the electrical properties of molecular system such as surface potential, surface charge, dielectric constant and conductivity along with the topography. The Scanning near-field optical / atomic force microscopy (SNOAM) is a new tool for surface imaging which was introduced as one application of the atomic force microscope (AFM). Operated with non-contact forces between the optical fiber and sample as well as equipped with the piezoscanners, the instrument reports on surface topology without damaging or modifying the surface for measuring of optical characteristic in the films. We report our recent results of its application to nanoscopic study of domain structures and electrical functionality in organic thin films by SMM. Furthermore, we have illustrated the SNOAM image in obtaining the merocyanine dye films as well as the optical image.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.581-584
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• 1998

TiN thin films were grown on (100) Si substrate by atomic layer epitaxy at 130 - $240^{\circ}C$ using TEMAT and NH3 as precursors. Reactants were injected into the reactor in sequence of TEMAT precursor vapor pulse, N2 purging gas pulse, NH3 gas pulse and N2 purging gas pulse so that gas-phase reactions could be removed. The films were characterized by means of x-ray diffraction(XRD), 4-point probe, atomic force microscopy(AFM) and auger electron spectroscopy(AES).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.430-430
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• 2011

Graphene, one single atomic layer of graphite, has attracted extensive attention in various research fields since its first isolation from graphite. Application in the future electronics requires better understanding and manipulation of electronic properties of graphene supported on various solid substrates. Here, we present a study on charge doping and morphology of graphene prepared on atomically flat and highly polar mica substrates. Ultra-flat single-layer graphene was prepared by micro-exfoliation of graphite followed by deposition on cleaved mica substrates. Atomic force microscopy (AFM) revealed presence of ultra-thin water films formed in a layer-by-layer manner between graphene and mica substrates. Raman spectroscopy showed that a few angstrom-thick water films efficiently block electron transfer from graphene to mica. Hole doping in graphene caused by underlying mica substrates was also visualized by scanning Kelvin probe microscopy (SKPM).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.32-32
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• 2009

Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.

• 폴리머
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• 제31권1호
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• pp.31-36
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• 2007

플라스마 표면처리는 전체적인 물성은 유지하고 표면의 특성만을 변화시킨다고 전해지고 있다. 이번 연구에서는 플라스마 처리에 의해 높은 발수성을 나타내는 나일론 6 섬유로의 개질을 시도하였다. 발수성을 나타내는 나일론 섬유는 가스 종류, 처리시간, 인가 파워를 변수로 하여 RF 진공 플라스마 시스템에서 처리되었다. 플라스마 처리된 섬유의 표면을 scanning electron microscopy(SEM)과 atomic force microscopy(AFM)으로 모폴로지 변화를 살펴보았으며, 기계적 특성과 고분자 고유의 특성을 인장강도와 Differential scanning calorimetry(DSC), thermo-gravimetric analysis (TGA)로 각각 분석하였다. 또한 나일론 섬유의 발수성 평가는 물방울 흡수시간으로 테스트를 실시하였다. 이러한 결과들은 플라스마 표면처리로 인해서 나일론 섬유의 발수성이 향상됨을 나타내었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1649-1650
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• 2006

반도체 소자의 선폭이 나노미터 스케일로 진입함에 따라 소자의 물리적 특성을 나노미터 스케일에서 정밀하게 측정하고자 하는 요구가 증대되고 있다. Atomic Force Microscopy (AFM)은 나노미터 이하의 해상도를 가지고 물질 표면의 기하하적, 전기적 특성 등을 측정할 수 있으므로 나노소자 연구에 필수적인 도구가 되었다. 그러나 AFM은 낮은 측정속도와 탐침의 기하학적 형상에 의한 AFM 영상의 왜곡 등과 같은 치명적인 단점도 가지고 있다. AFM의 낮은 측정 속도를 개선하기 위해서 진보된 마이크로머시닝기술을 이용하여 캔틸레버의 크기를 줄이거나 캔틸레버 위에 박막 구동기를 집적시키는 등의 노력이 진행되고 있으나, 이 경우 전통적인 식각 공정을 이용하여 캔틸레버 위에 tip을 형성하는 것이 매우 어렵다. 본 연구에서는 이미 제작된 캔틸레버 위에 전자빔 조사법을 이용하여 탄소상 tip을 직접 성장시킴으로써 전통적인 식각 공정에 비해 매우 간단하고 값싸며, 활용도가 높은 공정을 개발하였다. 탄소상 tip 성장에 필요한 탄소 소스는 dipping 방법을 이용하여 공급하였고, 시분할법을 사용하여 캔틸레버의 원하는 위치에 tip을 성장시킬 수 있었다. 이렇게 제작된 tip은 최대 $5{\mu}m$ 높이까지 가능했으며, 종횡비는 10:1 이상이어서 tip의 형상에 의한 AFM 영상 왜곡 현상을 최소화할 수 있을 것으로 기대된다.