• Applied Science and Convergence Technology
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• v.27 no.2
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• pp.23-25
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• 2018

With respect to the electrode structure and the discharge characteristics, the atmospheric pressure plasma sheet of a thin polyimide film is introduced in this study; here, the flexible plasma device of a dielectric-barrier discharge with the ground electrode and the high-voltage electrode formulated on each surface of a polyimide film whose thickness is approximately $100{\mu}m$, that is operated with a sinusoidal voltage at a frequency of 25 kHz and a low voltage from 1 kV to 2 kV is used. The streamer discharge is appeared along the cross-sectional boundary line between two electrodes at the ignition stage, and the plasma is diffused on the dielectric-layer surface over the high-voltage electrode. In the development of a plasma sheet with thin dielectric films, the avoidance of the insulation breakdown and the reduction of the leakage current have a direct influence on the low-voltage operation.

• Applied Chemistry for Engineering
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• v.33 no.2
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• pp.229-233
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• 2022

In this study, a gas-liquid hybrid atmospheric pressure plasma reactor of the dielectric barrier discharge method was fabricated and characterized. The solubility of copper oxide in the organic acid solution was increased when argon having a larger atomic weight than helium was used during plasma discharge. There was no significant effect of mixing organic acid solutions under plasma discharge treatment on the variation of copper oxide's solubility. As the applied voltage for plasma discharge and the concentration of the organic acid solution increased, the dissolution and removal power of the copper oxide layer increased. Solubility of copper oxide was more affected by the concentration in organic acid solution rather than the variation of plasma applied voltage. The usefulness of hybrid plasma reactor for the surface cleaning process was confirmed.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.190.1-190.1
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• 2016

One of the most serious problems faced by billions of people today is the availability of fresh water. According to statistics, 15% of the world's total output of dye products is discharged into the environment as dye wastewater, which seriously pollutes groundwater resources. For the treatment of chemically and biologically contaminated water the advanced oxidation processes (AOPs) shows the promising action. The main advantage with AOPs is the ability to degrade the organic pollutants to $CO_2$ and $H_2O$. For this degradation process the AOPs generation of powerful and non-selective radicals that may oxidize majority of the organic pollutants present in the water body. To generate the various reactive chemical species such as radicals (${\bullet}OH$, ${\bullet}H$, ${\bullet}O$, ${\bullet}HO_2$) and molecular species ($H_2O_2$, $H_2$, $O_2$) in large amount in water, we have used the atmospheric pressure plasma. Among the reactive and non-reactive species, the hydroxyl radical (${\bullet}OH$) plays important role due to its higher oxidation potential (E0: 2.8 V). Therefore, in this work we have checked the degradation of various dyes such as methyl orange, methylene blue and congo red using different type of atmospheric pressure plasma sources (Indirect jet and direct jet). To check the degradation we have used the UV-visible spectroscopy, HPLC and LC-MS spectroscopy. Further, to estimate role of ${\bullet}OH$ on the degradation of dyes we have studied the molecular dynamic simulation.

• Journal of the Korean institute of surface engineering
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• v.47 no.5
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• pp.227-232
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• 2014

In this study, we propose the application of doping process technology for atmospheric pressure plasma. The plasma treatment means the wafer is warmed via resistance heating from current paths. These paths are induced by the surface charge density in the presence of illuminating Argon atmospheric plasmas. Furthermore, it is investigated on the high-concentration doping to a selective partial region in P type solar cell wafer. It is identified that diffusion of impurities is related to the wafer temperature. For the fixed plasma treatment time, plasma currents were set with 40, 70, 120 mA. For the processing time, IR(Infra-Red) images are analyzed via a camera dependent on the temperature of the P type wafer. Phosphorus concentrations are also analyzed through SIMS profiles from doped wafer. According to the analysis for doping process, as applied plasma currents increase, so the doping depth becomes deeper. As the junction depth is deeper, so the surface resistance is to be lowered. In addition, the surface charge density has a tendency inversely proportional to the initial phosphorus concentration. Overall, when the plasma current increases, then it becomes higher temperatures in wafer. It is shown that the diffusion of the impurity is critically dependent on the temperature of wafers.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.22 no.5
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• pp.282-288
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• 2010

Experiment on the surface characteristics of polymer films treated by atmospheric pressure plasma has been conducted. We chose the process parameters as frequency, gas flow, treatment time, and scrutinized the effects of the process parameters on the surface characteristics of polymer materials by measuring the contact angle and examining SEM. As the result, the surface characteristics highly depends on frequency, reaction gas and treatment time. In the case of PC substrate, the contact angle was changed from $83.5^{\circ}$ (before plasma treatment) to $30^{\circ}$ (after plasma treatment) at 30 kHz, CDA 0.6%, and number of repeat 7. In the case of PET substrate, the contact angle change was found from $59^{\circ}$ to $23.5^{\circ}$ at 20 kHz, CDA 0.6%, and number of repeat 7. In the case of EVA substrate, it shows from $84^{\circ}$ to $44.2^{\circ}$ at 30 kHz, CDA 0.6%, and number of repeat 7.

• Journal of Microbiology
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• v.44 no.3
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• pp.269-275
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• 2006

Atmospheric-pressure cold plasma (APCP) using helium/oxygen was developed and tested as a suitable sterilization method in a clinical environment. The sterilizing effect of this method is not due to UV light, which is known to be the major sterilization factor of APCP, but instead results from the action of reactive oxygen radicals. Escherichia coli, Staphylococcus aureus, and Saccharomyces cerevisiae deposited on a nitrocellulose filter membrane or Bacillus subtilis spores deposited on polypropylene plates were exposed to helium/oxygen plasma generated with AC input power at 10 kHz, 6 kV. After Plasma treatment, nitrocellulose filter membranes were overlaid on fresh solid media and CFUs were counted after incubation overnight. D-values were 18 sec for E. coli, 19 sec for S. aureus, 1 min 55 sec for S. cerevisiae, and 14 min for B. subtilis spores. D-values of bacteria and yeast were dependent on the initial inoculation concentration, while the D-value of B. subtilis spores showed no correlation. When treated cells were observed with a scanning electron microscope, E. coli was more heavily damaged than S. aureus, S. cevevisiae exhibited peeling, and B. subtilis spores exhibited shrunken morphology. Results showed that APCP using helium/oxygen has many advantages as a sterilization method, especially in a clinical environment with conditions such as stable temperature, unlimited sample size, and no harmful gas production.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.152-155
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• 2003

Ashing of photoresist was investigated in dielectric barrier discharges in atmospheric pressure by changing applied voltage, frequency, flow rate. we analyzed the plasma by Optical Emission Spectroscopy(OES) to monitor the variation of active oxygen species. Another new peaks of oxygen radical is observed by addition of argon gas. This may explain the increase in ashing rate with argon addition. With the results of Optical Emission Spectroscopy(OES), we can find the optimized ashing conditions. MIS capacitor for monitoring charging damage by the plasma was also studied. The results suggest the dielectric barrier discharges(DBD) can be an efficient, alternative Plasma source for general surface processing.

• Journal of the Korean Vacuum Society
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• v.10 no.4
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• pp.411-415
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• 2001

Using the plasma that we developed to generate a low-temperature plasma at atmospheric pressure, we have investigated the etching possibility of tin oxide $(SnO_2)$ thin films. Hydrogen and methane radicals generated from the plasma were observed and their intensity was found to be dependent on the cathode material by an analysis with optical emission spectroscopy as well as by the plasma impedance. The etching ability of this plasma was evaluated by an emission intensity as well as by the evaluation of impedance using a plasma I-V curve.

• Fibers and Polymers
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• v.6 no.2
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• pp.113-120
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• 2005

Helium-oxygen plasma treatments were conducted to modify poly(trimethylene terephthalate) (PIT) and poly(ethylene terephthalate) (PET) warp knitted fabrics under atmospheric pressure. Lubricant and contamination removals by plasma etching effect were examined by weight loss $(\%)$ measurements and scanning electron microscopy (SEM) analysis. Surface oxidation by plasma treatments was revealed by x-ray photoelectron spectroscopy (XPS) analyses, resulting in formation of hydrophilic groups and moisture regain $(\%)$ enhancement. Low-stress mechanical properties (evaluated by Kawabata evaluation system) and bulk properties (air permeability and bust strength) were enhanced by plasma treatment. Increasing interfiber and interyarn frictions might play important roles in enhancing surface property changes by plasma etching effect, and then changing low-stress mechanical properties and bulk properties for both fabrics.

• Journal of the Semiconductor & Display Technology
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• v.16 no.4
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• pp.20-24
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• 2017

Currently, techniques mainly used in semiconductor impurity diffusion processes include furnace thermal diffusion, ion implantation, and vacuum plasma doping. However, there is a disadvantage that the process equipment and the unit cost are expensive. In this study, boron diffusion process using relatively inexpensive atmospheric plasma was conducted to solve this problem. With controlling parameters of Boron diffusion process, the doping characteristics were analyzed by using secondary ion mass spectrometry. As a result, the influence of each variable in the doping process was analyzed and the feasibility of atmospheric plasma doping was confirmed.