• 제목/요약/키워드: arc plasma deposition

검색결과 90건 처리시간 0.029초

고전압 방전 플라즈마에 의한 질화탄소 박막 층착 시 레이저 애블레이션 효과 (Effect of a Laser Ablation for Carbon Nitride Film Deposition)

  • 김종일
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.240-243
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    • 2002
  • Carbon nitride films have been deposited on Si(100) substrate by a high voltage discharge plasma combined with laser ablation in a nitrogen atmosphere. The films were grown both with and without the Presence of an assisting focused Nd:YAG laser ablation. The laser ablation of the graphite target leads to vapor Plume plasma expending into the ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy and Auger electron spectroscopy were used to identify the binding structure and the content of the nitrogen species in the deposited films. The surface morphology of the films was studied using a scanning electron microscopy Data of infrared spectroscopy and x-ray photoelectron spectroscopy indicate the existence of carbon-nitrogen bonds in the films. The x-ray diffraction measurements have also been taken to characterize the crystal properties of the obtain films.

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Control of surface defects on plasma-MIG hybrid welds in cryogenic aluminum alloys

  • Lee, Hee-Keun;Chun, Kwang-San;Park, Sang-Hyeon;Kang, Chung-Yun
    • International Journal of Naval Architecture and Ocean Engineering
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    • 제7권4호
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    • pp.770-783
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    • 2015
  • Lately, high production rate welding processes for Al alloys, which are used as LNG FPSO cargo containment system material, have been developed to overcome the limit of installation and high rework rates. In particular, plasma-metal inert gas (MIG) hybrid (PMH) welding can be used to obtain a higher deposition rate and lower porosity, while facilitating a cleaning effect by preheating and post heating the wire and the base metal. However, an asymmetric undercut and a black-colored deposit are created on the surface of PMH weld in Al alloys. For controlling the surface defect formation, the wire feeding speed and nozzle diameter in the PMH weld was investigated through arc phenomena with high-speed imaging and metallurgical analysis.

Revealing Strong Metal Support Interaction during CO Oxidation with Metal Nanoparticle on Reducible Oxide Substrates

  • Park, Dahee;Kim, Sun Mi;Qadir, Kamran;Park, Jeong Young
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.264-264
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    • 2013
  • Strong metal-support interaction effect is an important issue in determining the catalytic ac-tivity for heterogeneous catalysis. In this study, we investigated the support effect and the role of organic capping layers of two-dimensional Pt nanocatalysts on reducible metal oxide supports under the CO oxidation. Several reducible metal oxide supports including CeO2, Nb2O5, and TiO2 thin films were prepared via sol-gel techniques. The structure, chemical state and optical property were characterized using XRD, XPS, TEM, SEM, and UV-VIS spectrometer. We found that the reducible metal oxide supports have a homogeneous thin thickness and crystalline structure after annealing at high temperature showing the different optical band gap energy. Langmuir-Blodgett technique and arc plasma deposition process were employed to ob-tain Pt nanoparticle arrays with capping and without capping layers, respectively on the oxide support to assess the role of the supports and capping layers on the catalytic activity of Pt catalysts under the CO oxidation. The catalytic performance of CO oxidation over Pt supported on metal oxide thin films under oxidizing reaction conditions (40 Torr CO and 100 Torr O2) was tested. The results show that the catalytic activity significantly depends on the metal oxide support and organic capping layers of Pt nanoparticles, revealing the strong metal-support interaction on these nanocatalysts systems.

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ICP-CVD 방법으로 성장된 탄소 나노튜브의 구조적 특성 및 전계방출 특성: 기판전압 인가 효과 (Structural and Field-emissive Properties of Carbon Nanotubes Produced by ICP-CVD: Effects of Substrate-Biasing)

  • 박창균;김종필;윤성준;박진석
    • 전기학회논문지
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    • 제56권1호
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    • pp.132-138
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    • 2007
  • Carbon nanotubes (CNTs) arc grown on Ni catalysts employing an inductively-coupled plasma chemical vapor deposition (ICP-CVD) method. The structural and field-emissive properties of the CNTs grown are characterized in terms of the substrate-bias applied. Characterization using the various techniques, such as field-omission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), Auger spectroscopy (AES), and Raman spectroscopy, shows that the structural properties of the CNTs, including their physical dimensions and crystal qualities, as well as the nature of vertical growth, are strongly dependent upon the application of substrate bias during CNT growth. It is for the first time observed that the provailing growth mechanism of CNTs, which is either due to tip-driven growth or based-on-catalyst growth, may be influenced by substrate biasing. It is also seen that negatively substrate-biasing would promote the vertical-alignment of the CNTs grown, compared to positively substrate-biasing. However, the CNTs grown under the positively-biased condition display a higher electron-emission capability than those grown under the negatively-biased condition or without any bias applied.

Low temperature growth of carbon nanotube by plasma enhanced chemical vapor deposition (PECVD) using nickel catalyst

  • Ryu, Kyoung-Min;Kang, Mih-Yun;Kim, Yang-Do;Hyeongtag-Jeon
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2000년도 Proceedings of 5th International Joint Symposium on Microeletronics and Packaging
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    • pp.109-109
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    • 2000
  • Recently, carbon nanotube has been investigating for field emission display ( (FED) applications due to its high electron emission at relatively low electric field. However, the growing of carbon nanotube generally requires relatively high temperature processing such as arc-discharge (5,000 ~ $20,000^{\circ}C$) and laser evaporation (4,000 ~ $5,000^{\circ}C$) methods. In this presentation, low temperature growing of carbon nanotube by plasma enhanced chemical vapor deposition (PECVD) using nickel catalyst which is compatible to conventional FED processing temperature will be described. Carbon n notubes with average length of 100 run and diameter of 2 ~ $3\mu$ill were successfully grown on silicon substrate with native oxide layer at $550^{\circ}C$using nickel catalyst. The morphology and microstructure of carbon nanotube was highly depended on the processing temperature and nickel layer thickness. No significant carbon nanotube growing was observed with samples deposited on silicon substrates without native oxide layer. This is believed due to the formation of nickel-silicide and this deteriorated the catalytic role of nickel. The formation of nickel-silicide was confirmed by x-ray analysis. The role of native oxide layer and processing parameter dependence on microstructure of low temperature grown carbon nanotube, characterized by SEM, TEM XRD and R없nan spectroscopy, will be presented.

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다이어몬드상 탄소/실리콘 이종접합 태양전지의 특성 및 신뢰성 분석에 관한 연구 (A study on the characterization of properties and stabilities of a solar cell using diamond-like carbon/silicon heterojunctions)

  • 박진석
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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    • pp.683-687
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    • 1997
  • The purpose of this work is to develop a highly reliable solar cell based on the diamond-like carbon(DLC)/silicon heterojunction. Thin films of DLC have been deposited by employing both filtered cathodic vacuum arc(FCVA) and magnetron plasma-enhanced chemical vapor deposition(m-PECVD) systems. Structural, electrical, and optical properties of DLC films deposited are systematically analyzed as a function of deposition conditions, such as magnetic field, substrate bias voltage, gas pressure, and nitrogen content. The I-V measurement has been used to elucidate the mechanism responsible for the conduction process in the DLC/Si junction. Photoresponse characteristics of the junction are measured and its reliability against temperature and light stresses is also analyzed.

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질화탄소 박막 증기 증착 시 자장이 결정 구조 성장에 미치는 영향 (The influence of a magnetic field on a crystalline structure of carbon nitride deposition)

  • 김종일;배선기;박희석
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.165-169
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    • 2001
  • Carbon nitride films were grown on Si (100) substrate by a laser-electric discharge method with and without a magnetic field assistance. The magnetic field leads to vapor plume plasma expending upon the ambient arc discharge plasma area. Influence of the magnetic field has resulted in increase of a crystallite size in the films due to bombardment (heating) of Si substrates by energetic carbon and nitrogen species generated during cyclotron motion of electrons in the discharge zone. Many crystalline grains were observed in the morphology of the deposited films by scanning electron microscopy. In order to determine the structural crystalline parameters, X-ray diffraction (XRD) was used to analysis the grown films.

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PREPARATION OF AMORPHOUS CARBON NITRIDE FILMS AND DLC FILMS BY SHIELDED ARC ION PLATING AND THEIR TRIBOLOGICAL PROPERTIES

  • Takai, Osamu
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2000년도 추계학술발표회 초록집
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    • pp.3-4
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    • 2000
  • Many researchers are interested in the synthesis and characterization of carbon nitride and diamond-like carbon (DLq because they show excellent mechanical properties such as low friction and high wear resistance and excellent electrical properties such as controllable electical resistivity and good field electron emission. We have deposited amorphous carbon nitride (a-C:N) thin films and DLC thin films by shielded arc ion plating (SAIP) and evaluated the structural and tribological properties. The application of appropriate negative bias on substrates is effective to increase the film hardness and wear resistance. This paper reports on the deposition and tribological OLC films in relation to the substrate bias voltage (Vs). films are compared with those of the OLC films. A high purity sintered graphite target was mounted on a cathode as a carbon source. Nitrogen or argon was introduced into a deposition chamber through each mass flow controller. After the initiation of an arc plasma at 60 A and 1 Pa, the target surface was heated and evaporated by the plasma. Carbon atoms and clusters evaporated from the target were ionized partially and reacted with activated nitrogen species, and a carbon nitride film was deposited onto a Si (100) substrate when we used nitrogen as a reactant gas. The surface of the growing film also reacted with activated nitrogen species. Carbon macropartic1es (0.1 -100 maicro-m) evaporated from the target at the same time were not ionized and did not react fully with nitrogen species. These macroparticles interfered with the formation of the carbon nitride film. Therefore we set a shielding plate made of stainless steel between the target and the substrate to trap the macropartic1es. This shielding method is very effective to prepare smooth a-CN films. We, therefore, call this method "shielded arc ion plating (SAIP)". For the deposition of DLC films we used argon instead of nitrogen. Films of about 150 nm in thickness were deposited onto Si substrates. Their structures, chemical compositions and chemical bonding states were analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. Hardness of the films was measured with a nanointender interfaced with an atomic force microscope (AFM). A Berkovich-type diamond tip whose radius was less than 100 nm was used for the measurement. A force-displacement curve of each film was measured at a peak load force of 250 maicro-N. Load, hold and unload times for each indentation were 2.5, 0 and 2.5 s, respectively. Hardness of each film was determined from five force-displacement curves. Wear resistance of the films was analyzed as follows. First, each film surface was scanned with the diamond tip at a constant load force of 20 maicro-N. The tip scanning was repeated 30 times in a 1 urn-square region with 512 lines at a scanning rate of 2 um/ s. After this tip-scanning, the film surface was observed in the AFM mode at a constant force of 5 maicro-N with the same Berkovich-type tip. The hardness of a-CN films was less dependent on Vs. The hardness of the film deposited at Vs=O V in a nitrogen plasma was about 10 GPa and almost similar to that of Si. It slightly increased to 12 - 15 GPa when a bias voltage of -100 - -500 V was applied to the substrate with showing its maximum at Vs=-300 V. The film deposited at Vs=O V was least wear resistant which was consistent with its lowest hardness. The biased films became more wear resistant. Particularly the film deposited at Vs=-300 V showed remarkable wear resistance. Its wear depth was too shallow to be measured with AFM. On the other hand, the DLC film, deposited at Vs=-l00 V in an argon plasma, whose hardness was 35 GPa was obviously worn under the same wear test conditions. The a-C:N films show higher wear resistance than DLC films and are useful for wear resistant coatings on various mechanical and electronic parts.nic parts.

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AZ31 마그네슘 합금의 플라즈마 전해 산화에서 Sodium Aluminate 농도가 산화막 특성에 미치는 영향 (Effect of Sodium Aluminate Concentration in Electrolyte on the Properties of Anodic Films Formed on AZ31 Mg Alloy by Plasma Electrolytic Oxidation)

  • 이종석;백홍구;김성완
    • 열처리공학회지
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    • 제25권5호
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    • pp.227-232
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    • 2012
  • Magnesium alloy have good physical properties such as good castability, good vibration absorption, high strength/weight ratios. Despite the desirable properties, the poor resistance of Mg alloy impedes their use in many various applications. Therefore, magnesium alloy require surface treatment to improve hardness, corrosion and wear resistance. Plasma Electrolytic Oxidation (PEO) is one the surface treatment methods to form oxide layer on Mg alloy in alkali electrolyte. In comparison with Anodizing, there is environmental process having higher hardness and faster deposition rate. In this study, the characteristics of oxide film were examined after coating the AZ31 Mg alloy through the PEO process. We changed concentration of sodium aluminate into $K_2ZrF_6$, KF base electrolyte. The morphologies of the coating layer were characterized by using scanning electron microscopy (SEM). Corrosion resistance also investigated by potentiodynamic polarization analysis. As a result, propertiy of oxide layer were changed by concentration of sodium aluminate. Increasing with concentration of sodium aluminate in electrolyte, the oxidation layer was denser and the pore size was smaller on the surface.

Pulsed Magnetron Sputtering Deposit ion of DLC Films Part I : Low-Voltage Bias-Assisted Deposition

  • Oskomov, Konstantin V.;Chun, Hui-Gon;You, Yong-Zoo;Lee, Jing-Hyuk;Kim, Kwang-Bok;Cho, Tong-Yul;Sochogov, Nikolay S.;Zakharov, Alexender N.
    • 한국표면공학회지
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    • 제36권1호
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    • pp.27-33
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    • 2003
  • Pulsed magnetron sputtering of graphite target was employed for deposition of diamond-like carbon (DLC) films. Time-resolved probe measurements of magnetron discharge plasma have been performed. It was shown that the pulsed magnetron discharge plasma density ($∼10^{17}$ $m^{-3}$ ) is close to that of vacuum arc cathode sputtering of graphite. Raman spectroscopy was sed to examine DLC films produced at low ( $U_{sub}$ / < 1 kV) pulsed bias voltages applied to the substrate. It has been shown that maximum content of diamond-like carbon in the coating (50-60%) is achieved at energy per deposited carbon atom of $E_{c}$ =100 eV. In spite of rather high percentage of $sp^3$-bonded carbon atoms and good scratch-resistance, the films showed poor adhesion because of absence of ion mixing between the film and the substrates. Electric breakdowns occurring during the deposition of the insulating DLC film also thought to decrease its adhesion.