• Journal of the Korean Chemical Society
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• v.56 no.5
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• pp.542-547
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• 2012

We have investigated the electronic properties of the oxide film and anodic oxidation mechanism. Iron was oxidized by two reaction pathways depending on pH. The oxide film has showed the electronic properties of n-type semiconductor based on the Mott-Schottky equation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.113-117
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• 1994

In this paper, an experiment about humidity sensing properties of oxide aluminum films by Anodic oxidation method was made. The humidity sensing properties of films were investigated in the relative humidity range of 10∼85(%RH) , changing the frequency from 1[kHz] to 100[kHz]. The impedance of humidity sensing films were decreased in accordance with the increase of relative humidity. The decreasing rate of impedance were larger at low measuring frequency. The decreasing difference changes from 17.7M$\Omega$ to 3.68M$\Omega$ at low measuring frequency.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.158-159
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• 2011

In this work, The electrochemical behavior of CF/Al composite was investigated at constant current densities in aqueous solutions. The surface and cross section of PEO-treated CF/Al were observed using SEM, EDS and OM. The CF/Al composite contains carbon fibers of about 40 Vol.% with 5~7 um diameter and 100~150 um length. The carbon fibers appeared to b removed by anodic oxidation in sulfuric acid solution, leaving a carbon-fiber free zone in the surface region. Anodic oxide films were formed in the carbon-free region by plasma electrolytic oxidation(PEO) method in alkaline solutions.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.235-238
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• 1999

Silicon dioxide films were prepared by anodizing silicon wafers in an ethylene $glycol+HNO_3(0.04{\;}N)$ at 20 to $70^{\circ}C$. The voltage between silicon anode and platinum cathode was measured during this process. Under the constant current electrolysis, the voltage increased with oxide film growth. The transition time at which the voltage reached the predetermined value depended on the temperature of the electrolyte. After the time of electrolysis reached the transition time, the anodization was changed the constant voltage mode. The depth profile of oxide film/Si substrate was confirmed by XPS analysis to study the influence of the electrolyte temperature on the anodization. Usually, the oxide-silicon peaks disappear in the silicon substrate, however, this peak was not small at $45^{\circ}C$ in this region.

• Journal of the Korean Ceramic Society
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• v.28 no.6
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• pp.443-450
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• 1991

Microstructures of tantalum oxide, anodic-oxidized in oxalic acid, are shown to be related to voltage-time characteristics during formation reaction. It is observed that a crystalline phase transformed from an amorphous phase is recrystallized in the presence of the high electric field within the film, and this recrystallized film has a very porous microstructure. From the results of the XRD, the nonlinearity observed after the first spark voltage is recognized to be due to the local crystallization.

• Bulletin of the Korean Chemical Society
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• v.33 no.5
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• pp.1443-1444
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• 2012

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.114-114
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• 2001

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.05a
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• pp.148-150
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• 1999

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.48-48
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• 2001

• Journal of the Korean institute of surface engineering
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• v.42 no.6
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• pp.260-266
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• 2009

The anodic oxidation behaviour of a cast component of AC2A Al alloy with machined surface and ascast surface was investigated in sulfuric acid solution. The anodized specimen showed relatively uniform and thick anodic oxide films on the as-cast surface, while non-uniform and very thin oxide films were formed on the machined surface. Non-anodized as-cast surface was observed to be covered with thick oxide scales and showed a number of second-phase particles containing Si, while non-anodized machined surface showed no oxide scales and relatively very small number of Si particles. Thus, the very limited growth of anodic oxide films on the as-cast surface was attributed to the presence of thick oxide scales and Si-containing second-phase particles on its surface.