• Journal of Korea Multimedia Society
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• v.14 no.3
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• pp.403-413
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• 2011

In this paper, we proposed a digital image watermarking technique using scrambled binary phase computer generated hologram in the discrete cosine transform(DCT) domain. For the embedding process of watermark. Using simulated annealing algorithm, we would generate a binary phase computer generated hologram(BPCGH) which can reconstruct hidden image perfectly instead of hidden image and encrypt it through the scramble operation. We multiply the encrypted watermark by the weight function and embed it into the DC coefficients in the DCT domain of host image and an inverse DCT is performed. For the extracting process of watermark, we compare the DC coefficients of watermarked image and original host image in the DCT domain and dividing it by the weight function and decrypt it using descramble operation. And we recover the hidden image by inverse Fourier transforming the decrypted watermark. Finally, we compute the correlation between the original hidden image and recovered hidden image to determine if a watermark exits in the host image. The proposed watermarking technique use the hologram information of hidden image which consist of binary values and scramble encryption technique so it is very secure and robust to the various external attacks such as compression, noises and cropping. We confirmed the advantages of the proposed watermarking technique through the computer simulations.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.27 no.5
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• pp.421-427
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• 2014

Most of the structure of the real world is influenced under dynamic loads. However, when structure analysis and the structural optimization is performed, it is assumed that the static load acts on structure. When considering the actual load of dynamic loads in order to take into account a variety of loads, computational resources and time becomes a big burden in terms of cost. However, considering only the simple static load condition is not preferable for structural safety. For this reason, a lot of studies have been conducted trying to compensate this trouble by applying weight factor or replacing dynamic load with the equivalent static load. In this study, structural optimization techniques for structures under dynamic loads is proposed by applying the equivalent static load. From previous study, after determining the positions of equivalent static load based on primary degrees of freedom, the equivalent static load is calculated through the optimization process. In this process, the equivalent static load optimization of previous research is complemented by adding constraints to avoid excessively large load extraction. In numerical examples, dynamic load is applied to the truss structure and the plate. Then, the reliability of the proposed optimization technique is verified by carrying out size optimization with the equivalent static load.

• Journal of Sensor Science and Technology
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• v.1 no.1
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• pp.23-34
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• 1992

In order to fabricate magnetoresistive sensor, Fe-Ni and Co-Ni alleys were evaporated on the slide glass and the silicon wafers. Saturation magnetic induction($B_{s}$), coercive field strength($H_{c}$) and magnetoresistance were measured for fabricated samples. The evaporated Fe-Ni thin films show that the saturation magnetic induction was 0.65 T, and coercive field strength was 0.379 A/cm, and this value was changed to 0.370 A/cm(//), 0.390 A/cm(${\bot}$), respectively after magnetic annealing. For the measurement of coercive field strength, magnetizing frequency of 1 kHz was used. For the fabricated sensor element, the change of magnetoresistance (${\Delta}R/R$) was excessively unstable due to oxidation in the process of fabrication. The evaporated Co-Ni alloy thin films show that saturation magnetic induction was 0.66 T, and coercive field strengthes were 5.895 A/cm(//), 5.898 A/cm(${\bot}$), respectively, after magnetic annelaing. The change of magnetoresistance(${\Delta}R/R$) was $3.6{\sim}3.7%$ of which value was excessively stable to room temperature. Fe-Ni thin film could have many problems due to large affinity in the process of fabrication of magnetoresistance sensor, but Co-Ni thin film could be a suitable material for fabrication of magnetoresistance sensor, because of its small affinity and definite magnetoresistance effects.

• Corrosion Science and Technology
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• v.11 no.1
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• pp.1-8
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• 2012

The development of martensitic grades which can be processed in continuous galvanizing lines requires the reduction of the oxides formed on the steel during the hot dip process. This reduction mechanism was investigated in detail by means of High Resolution Transmission Electron Microscopy (HR-TEM) of cross-sectional samples. Annealing of a martensitic steel in a 10% $H_2+N_2$ atmosphere with the dew point of $-35^{\circ}C$ resulted in the formation of a thin $_{C-X}MnO.SiO_{2}$ (x>1) oxide film and amorphous $_{a-X}MnO.SiO_{2}$ oxide particles on the surface. During the hot dip galvanizing in Zn-0.13%Al, the thin $_{C-X}MnO.SiO_{2}$ (x>1) oxide film was reduced by the Al. The $_{a-X}MnO.SiO_{2}$ (x<0.9) and $a-SiO_{2}$ oxides however remained embedded in the Zn coating close to the steel/coating interface. No $Fe_{2}Al_{5-X}Zn_{X}$ inhibition layer formation was observed. During hot dip galvanizing in Zn-0.20%Al, the $_{C-X}MnO.SiO_{2}$ (x>1) oxide film was also reduced and the amorphous $_{a-X}MnO.SiO_{2}$ and $a-SiO_{2}$ particles were embedded in the $Fe_{2}Al_{5-X}Zn_{X}$ inhibition layer formed at the steel/coating interface during hot dipping. The results clearly show that Al in the liquid Zn bath can reduce the crystalline $_{C-X}MnO.SiO_{2}$ (x>1) oxides but not the amorphous $_{a-X}MnO.SiO_{2}$ (x<0.9) and $a-SiO_{2}$ oxides. These oxides remain embedded in the Zn layer or in the inhibition layer, making it possible to apply a Zn or Zn-alloy coating on martensitic steel by hot dipping. The hot dipping process was also found to deteriorate the mechanical properties, independently of the Zn bath composition.

• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.189-195
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• 2001

We prepared TMR junctions of NiFe(170 )/CoFe(48 )/Al(13 )-O/CoFe(500 )/Ta(50 ) structure on 2.5$\times$2.5 $\textrm{cm}^2$ area Si/SiO$_2$ substrates in order to investigate the uniformity of magnetoresistance(MR) value using a ICP magnetron sputter. Each layer was deposited by the ICP magnetron sputter and tunnel barrier was formed by the plasma oxidation method. We measured MR ratio and resistance of TMR devices with four-terminal probe system by applying external magnetic field. Although we used ICP sputter which is known as superior to make uniform films, the standard variation of MR ratio was 2.72. The variation was not dependent on the TMR devices location of a substrate. We found that MR ratio and spin-flip field (H's) increased as the resistance increased, which may be caused by local interface irregularity of the insulating layer. The variation of resistance value was 64.19 and MR ratio was 2.72, respectively. Our results imply that to improve the insulating layer fabrication process including annealing process to lessen interface modulation in order to mass produce the TMR devices.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.4
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• pp.178-184
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• 2010

The $12CaO{\cdot}7Al_2O_3$(C12A7) powders were successfully synthesized using combustion method with microwave-assistant and C12A7:H were fabricated by post-annealed process in Ar/H atmosphere. X-ray diffraction patterns and TGDSC were used for investigating to the precursors of crystalline and reaction depending on temperature. C12A7:H that was treated post-annealed process were investigated TG-MS and Hall-measurement for confirming H ions doping and checking electrical resistivity of C12A7:H. H ion substituted to $O^{2-}$ ions in the C12A7 cages were confirmed at $289.5^{\circ}C$ by TG-MS and C12A7:H calcined at $1000^{\circ}C$ in Ar/H=8:2 atmosphere for 8~10 h has low electrical resistivity about $10^2{\Omega}{\cdot}cm$ at room temperature.

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.512-518
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• 2001

It has been well known that 6.5wt% Si steel sheets have excellent magnetic properties such as low core loss. high maximum permeability and low magnetostriction. In this work, we studied a method for producing 6.5wt% Si steel sheets using a chemical vapor deposition (CVD) method. The following is the procedure adopted in this work to produce 6.5wt% Si steel sheets; SiCl$_4$ gas is applied onto a low content-Si steel sheet placed in a tube furnace. Silicon atoms resulted from the decomposition of SiCl$_4$ are permeated through the surface of the steel sheet. Finally, by the diffusion process maintaining it under a high temperature the silicon atoms diffuse uniformly into the sheet. Through this process, 6.5wt% Si steel sheets can be obtained. The manufactured Fe-6.5wt% Si steel sheet with a thickness of 0.5mm exhibited a high frequency core loss (W$_{2}$1k/) of 8.92 W/kg. Its permeability increased from 37,100 to 53,300 at 1 tesular(T). The mechanical properties of the manufactured steel sheets were also estimated and the result showed that the workability was significantly improved by annealing in vacuum at 773k. Increased plastic deformation was also observed prior to fracture and the amount of grain boundary rupture was reduced.

• Composites Research
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• v.34 no.5
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• pp.311-316
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• 2021

In this study, TiC/steel metal matrix composites were fabricated by powder metallurgy process using Fealloy powders with 3 wt.% Cr and 10 wt.% Cr, respectively, as matrix material. Subsequently, the composite samples were heat treated by the annealing and quenching-tempering(Q-T), respectively, to understand the effect of heat treatment on the mechanical properties of the composites. The correlation between microstructure and structural strength depending on the chromium content and the heat treatment conditions was studied through tensile, compressive, and transverse rupture test and microstructural analysis. In the case of TiC/steel composite containing 10 wt.% Cr, the tensile strength and transverse rupture strength at room temperature were significantly lowered by the influence of coarse chromium carbide formed at the TiC/steel interface. On the other hand, both TiC/steel composites containing 3 wt.% Cr and 10 wt.% Cr showed much higher compressive strength of about 4 GP after quenching-tempering compared to the annealed specimens regardless of the presence of the chromium carbide.

• Korean Journal of Metals and Materials
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• v.46 no.11
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• pp.762-769
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• 2008

Hydrogenated amorphous silicon(a-Si : H) layers, 120 nm and 50 nm in thickness, were deposited on 200 $nm-SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by E-beam evaporation. Finally, 30 nm-Ni/120 nm a-Si : H/200 $nm-SiO_2$/single-Si and 30 nm-Ni/50 nm a-Si:H/200 $nm-SiO_2$/single-Si were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 30 minute. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide on the 120 nm a-Si:H substrate showed high sheet resistance($470{\Omega}/{\Box}$) at T(temperature) < $450^{\circ}C$ and low sheet resistance ($70{\Omega}/{\Box}$) at T > $450^{\circ}C$. The high and low resistive regions contained ${\zeta}-Ni_2Si$ and NiSi, respectively. In case of microstructure showed mixed phase of nickel silicide and a-Si:H on the residual a-Si:H layer at T < $450^{\circ}C$ but no mixed phase and a residual a-Si:H layer at T > $450^{\circ}C$. The surface roughness matched the phase transformation according to the silicidation temperature. The nickel silicide on the 50 nm a-Si:H substrate had high sheet resistance(${\sim}1k{\Omega}/{\Box}$) at T < $400^{\circ}C$ and low sheet resistance ($100{\Omega}/{\Box}$) at T > $400^{\circ}C$. This was attributed to the formation of ${\delta}-Ni_2Si$ at T > $400^{\circ}C$ regardless of the siliciation temperature. An examination of the microstructure showed a region of nickel silicide at T < $400^{\circ}C$ that consisted of a mixed phase of nickel silicide and a-Si:H without a residual a-Si:H layer. The region at T > $400^{\circ}C$ showed crystalline nickel silicide without a mixed phase. The surface roughness remained constant regardless of the silicidation temperature. Our results suggest that a 50 nm a-Si:H nickel silicide layer is advantageous of the active layer of a thin film transistor(TFT) when applying a nano-thick layer with a constant sheet resistance, surface roughness, and ${\delta}-Ni_2Si$ temperatures > $400^{\circ}C$.

• Journal of Korea Society of Industrial Information Systems
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• v.14 no.3
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• pp.15-21
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• 2009

In this paper, we proposed an iterative digital image watermarking technique using encrypted binary phase computer generated hologram in the discrete cosine transform(OCT) domain. For the embedding process of watermark, using simulated annealing algorithm, we would generate a binary phase computer generated hologram(BPCGH) which can reconstruct hidden image perfectly instead of hidden image and repeat the hologram and encrypt it through the XOR operation with key image that is ramdomly generated binary phase components. We multiply the encrypted watermark by the weight function and embed it into the DC coefficients in the DCT domain of host image and an inverse DCT is performed. For the extracting process of watermark, we compare the DC coefficients of watermarked image and original host image in the DCT domain and dividing it by the weight function and decrypt it using XOR operation with key image. And we recover the hidden image by inverse Fourier transforming the decrypted watermark. Finally, we compute the correlation between the original hidden image and recovered hidden image to determine if a watermark exits in the host image. The proposed watermarking technique use the hologram information of hidden image which consist of binary values and encryption technique so it is very secure and robust to the external attacks such as compression, noises and cropping. We confirmed the advantages of the proposed watermarking technique through the computer simulations.