• Economic and Environmental Geology
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• v.32 no.2
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• pp.177-187
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• 1999

Gravity, magnetic and VLF surveys were conducted to investigat the structural stability and hazards associated with the Ubong landfill in Pohang City, which has been built to dump industrial wastes. In 1994, the collapse of a bank happened in the 6th landfill site due to sudden heavy rain, and a large quantity of waste materials flowed out to the nearby landfill sites, factories and roads. We used $10{\times}10m$ resolution DEM data for gravity reductions. The maximum variation of the terrain effect in the survey area is about 0.5 mgal and the terrain effect is large in the vicinity of bank boundary. The Bouguer gravity anomaly map shows the effect due to the variatino of thickness and type of waste materials. The small negative gravity anomaly increases from the 9th site to the 6th site. The small negative gravity anomaly of the 9th site reflects the relatively shallow dumping depth of average 14.5 m in this site and increased density of waste materials by the repeated stabilization process of soil overlaying. The 6th site is located at the center of the former valley and rainfall and groundwater are expected to flow from south-east to north-west. Therefore, considering the previous accident of mixing waste and bank materials at the north-west boundary of the landfill, there may be some environmental problems of leakage of contaminated water and bank stability. The complex inversion technique using Simulated annealing and Marquardt-Levenberg methods was applied to calculate three-dimensional density distribution from gravity data. In the case of 6th site, it is apparent that the landfill had been dumped in four sectors. However, most part of the 9th site and showed that high magnetic industrial wastes were concentrated in the 6th site. The result of magnetic survey showing low magnetic anomalies along the boundaries of two sites is similar to that of gravity data. The VLF data also reveals four divided sectors in the 6th site, and overall anomaly trend indicates the directio of former valley.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.383-383
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• 2009

Silicon is commercially prepared by the reaction of high-purity silica with wood, charcoal, and coal, in an electric arc furnace using carbon electrodes, so called the metallurgical refining process, which produces ~98% pure Si (MG-Si). This can be further purified to solar grade silicon (SoG-Si) by various techniques. The most problematic impurity elements are B and P because of their high segregation coefficients. In this study, we explored the possibility of the using Cat-CVD for Si purification. The existing hot-wire CVD was modified to accommodate the catalyzer and the heating source. Mo boat (1.5 cm ${\times}$ 1 cm ${\times}$ 0.2 cm) was used as a heating source. Commercially available Si was purchased from Nilaco corporation (~99% pure). This powder was kept in the Mo-boat and heated to the purification temperature. In addition to the purification by cat-CVD technique, other methods such as thermal CVD, plasma enhanced CVD, vacuum annealing was also tried. It is found that the impurities are reduced to a great extent when treated with cat-CVD method.

• Applied Chemistry for Engineering
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• v.10 no.3
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• pp.354-361
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• 1999

The films annealed after physical deposition of titanium and chemical deposition of amorphous silicon by plasma were formed Si-rich titanium silicide with a good quality of crystallinity and had the various lattice structures due to orientation of lattices for epitaxy growth during annealing process. Band gap of the titanium silicide had 1.14~1.165 eV and the films annealed after chemical deposition of a-Si:H by plasma were influenced by a-Si and the dangling bond offered by desorption of hydrogen. Urbach tail ($E_0$) of the films annealed after physical deposition of Ti was nearly constant within a range of 0.045~0.05 eV, and the number of defect in films annealed after chemical deposition of a-Si:H by plasma was about 2~3 times more than that in annealed Ti/Si films.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.60.2-60.2
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• 2011

A study of the non-linear optical properties of nanocrystal-Si embedded in SiO2 has been performed by using the z-scan method in the nanosecond and femtosecond ranges. Substoichiometric SiOx films were grown by plasma-enhanced chemical-vapor deposition(PECVD) on silica substrates for Si excesses up to 24 at/%. An annealing at $1250^{\circ}C$ for 1 hour was performed in order to precipitate nanocrystal-Si, as shown by EFTEM images. Z-scan results have shown that, by using 5-ns pulses, the non-linear process is ruled by thermal effects and only a negative contribution can be observed in the non-linear refractive index, with typical values around $-10-10cm^2/W$. On the other hand, femtosecond excitation has revealed a pure electronic contribution to the nonlinear refractive index, obtaining values in the order of 10-12 cm2/W. Simulations of heat propagation have shown that the onset of the temperature rise is delayed more than half pulse-width respect to the starting edge of the excitation. A maximum temperature increase of ${\Delta}T=123.1^{\circ}C$ has been found after 3.5ns of the laser pulse maximum. In order to minimize the thermal contribution to the z-scan transmittance and extract the electronic part, the sample response has been analyzed during the first few nanoseconds. By this method we found a reduction of 20% in the thermal effects. So that, shorter pulses have to be used obtain just pure electronic nonlinearities.

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.347-352
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• 2010

To research the reduction of the dielectric constant depending on the ionic and electronic effects, the dielectric constant of SiOC film was obtained by C-V measurement using the structure of metal/SiOC film/Si, and $n^2$ calculated by the refractive index. The dielectric constant of SiOC film consists with dipole, ions and electrons. However, the dipole moment is ignored in the effect of dielectric constant in SiOC film. THe SiOC film was deposited by the plasma energy, and the gas precursor was dissociated and recombined. Therefore, the dielectric constant of the deposited film consisted of the polarity with ions. THe dielectric constant decreased after annealing process, because of the evaporation of OH hydroxyl group with polarity. The ideal SiOC film as low-k materials was annealed film with lowering the polarity, which is suitable for physical-chemical and electrical properties as an inter layer dielectric materials.

• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.51-54
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• 1999

Hydrogenated amorphous silicon (a-Si:H) films are fabricated by Argon radical annealing (ArRA). The deposition rate of continuously deposited a-Si:H film is 1.9 $\AA$/s. As ArRA time are increased to 0.5 and 1 minute, the deposition rate are increased to 2.8 $\AA$/s and 3.3 $\\AA$/s. The deposition rate of a-si:H films with 2 and 3 minutes ArRA time are 3.3 $\AA$/s. As the ArRA time is increased, the optical band gap and the hydrogen contents in the a-Si:H films are increased and slightly decreased. The light-induced degradation of ArRA treated a-Si:H films are less than that of continuously deposited a-Si:H film. The dark conductivity and the conductivity activation energy ($E_a$) of continuously deposited a-Si:H film are decreased to 1/25 in room temperature and increased to 0.09eV By 1 hour light soaking, respectively. The dark conductivity and $E_a$ of ArRA treated a-Si:H film decreased to 1/3 in room temperature and increased to 0.03eV by 1 hour light soaking, respectively. We could improve the stability of a-Si:H films under the light soaking by ArRA technique and discussed the microscopic process of ArRA technique.

• Economic and Environmental Geology
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• v.26 no.1
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• pp.107-114
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• 1993

For the blue sapphires from Santung, China, the color change before and after has been investigated by UV-Visible spectrophotometry method. The blue sapphires from Shantung show four groups of absorption bands: the bands A (374, 386 and 450 nm) being attributed to single $Fe^{3+}$ ion, the band B (560, 579 and $704n{\breve{m}}$) to $Fe^{2+}$/$Ti^{4+}$ pairs, the band C (-800 nm) to $Fe^{2+}$/$Fe^{3+}$ pairs, and the D (528 nm) to $Ti^{3+}$ dd transitions. From those UV-VIS characteristics the origin of blue color of the sapphires is confirmed to be attributed by the factors such as $Fe^{2+}$/$Fe^{3+}$ and $Ti^{3+}$/$Ti^{4+}$. The absorption spectra of natural blue sapphires before and after heat treatment show distintive features, comparing with those of sapphires from other localities: the bands of 689 nm and of $Cr^{3+}$ are not recorded on the spectra of sapphires from Shantung. The band (492 nm), which resulted from $Ti^{3+}$, is not shown and the intensity of the band 528 nm decreases after the heat treatment. Decoloration of ink-blue sapphires are found to be successful by heat treatment with the control of annealing and atmosphere. During the diffusion process the excess components of impurities contained originally in the host crystal were expelled to the surface of crystals, enhancing the transparency of the crystals noticeably.

• Journal of the Korean Society for Heat Treatment
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• v.9 no.1
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• pp.1-11
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• 1996

Mechanical alloying is an effective process to finely distribute inert dispersoids in an Al-TM(TM is a transition metal) system. It has been considered that high melting point aluminides are formed by precipitation from supersaturated Al(Ti) powder. This analysis is based on the fact that much higher content of TM than the solubioity can be dissolved in alpha aluminum during the high energy ball milling. Thus, decomposition behavior of Ti in the Al(Ti) was considered very important. But it is confirmed that the higher portion of Ti than Al(Ti) solid solution is existed as nano-sized Ti particles in the MA powders by high energy ball nilling from the XRD spectrum and TEM analysis in this study. Therefore, the role of undissolved TM particles affect the formation of aluminides should be suitably considered. In this study, we present experimental observation on the formation of $Al_3Ti$ fron mechanical alloyed Al-Ti alloys in the hyperperitectic region. This study showed that, in the mechanically alloyed Al-20wt%Ti specimen, intermediate phase of cubic $Al_3Ti$ and tetragonal $Al_{24}Ti_8$ formed at $300{\sim}400^{\circ}C$ and $400{\sim}500^{\circ}C$, respectively, before the MA state reaches to equilibrium at higher temperatures. The formation behavior of $Ll_2-Al_3Ti$ is interpreted by interdiffusion of Al and Ti in solid state based on the fact that large amount of nano-sized Ti particles exist in the milled powder. Present analysis indicated undissolved Ti particles of nanosize should have played an important role initiation the formation of $Al_3Ti$ phase during annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.93-93
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• 2003

Photoluminescence(PL) properties of Silicon nanocrystals (nc-Si) as a function of temperature is reported to consider the mechanism of PL. Nc-Si has been made by $Si^+$ ion-implantation into thermal $SiO_2$ and subsequent annealing. And after gold had been diffused at the same samples above, the resultant PL spectra has been compared to the PL spectra from the non-gold doped nc-Si. PL peak energy variation from nc-Si is same with the variation of energy bandgap of bulk silicon as temperature changes from 6 K to room temperature. This result may mean nc-Si is still indirect transition material like bulk silicon. Gold doped nc-Si reveals short peak wavelength of PL spectrum than gold undoped one. PL peak shift through gold doing process shows clearly the PL mechanism is not from defect or interface states. PL intensity increases from 6K to a certain temperature and then decrease to room temperature. This characteristic with temperature shows that phonon have a role for the luminescence as theory explains that electron and hole can be recombined radiatively by phonon's assist in nc-Si, which is almost impossible in bulk silicon. Therefore luminescence is observed in nc-Si constructed less than a few of unit cell and the peak energy of luminescence can be higher than the bulk bandgap energy by the bandgap widening effect occurs in nanostructure.

• Transactions on Electrical and Electronic Materials
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• v.11 no.2
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• pp.81-84
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• 2010

Al-doped ZnO (AZO) films were prepared by an Ar:$H_2$ gas radio frequency (RF) magnetron sputtering system with a AZO ($2\;wt{\cdot}%\;Al_2O_3$) ceramic target at the low temperature of $100^{\circ}C$ and annealed in hydrogen ambient at the temperature of $300^{\circ}C$. To investigate the influence of the $H_2$ flow ratio on the properties of the AZO films, the $H_2$ flow ratio was changed from 0.5% to 2%. As a result, the AZO films, deposited with a 1% $H_2$ addition, showed a resistivity of $11.7\;{\times}\;10^{-4}\;{\Omega}{\cdot}cm$. When the AZO films were annealed at $300^{\circ}C$ for 1 hour in a hydrogen atmosphere, the resistivity decreased from $11.7\;{\times}\;10^{-4}\;{\Omega}{\cdot}cm$ to $5.63\;{\times}\;10^{-4}\;{\Omega}{\cdot}cm$. The lowest resistivity of $5.63\;{\times}\;10^{-4}{\Omega}{\cdot}cm$ was obtained by adding 1% hydrogen gas to the deposition and annealing process. The X-ray diffraction patterns of all the films showed a preferable growth orientation in the (002) plane. The spectrophotometer measurements showed that the transmittance of 85% was obtained by the film deposited with the $H_2$ flow ratio of 1% at 940 nm for GaAs/GaAlAs LEDs.