• 제목/요약/키워드: annealing heating rate

검색결과 35건 처리시간 0.024초

고속응답 마이크로 유량센서의 제작 (Fabrication of Micro-Flow Sensors with High-response Time)

  • 정귀상;홍석우
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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    • pp.17-20
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    • 2000
  • This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD's and micro-heaters on the Si substrate, in which MgO thin-films were used as medium layer in order to improve adhesion of Pt thin-films to $SiO_2$ layer, The MgO layer improved adhesion of Pt thin-films to $SiO_2$ layer without any chemical reactions to Pt thin-films under high annealing temperatures. In investigating output characteristics of the fabricated micro-flowsensors, the output voltages increased as gas flow rate and its conductivity increased due to increase of heat-loss from sensor to external. Output voltage was 82 mV at $N_2$ flow rate of 2000 seem/min, heating power of 1.2W.

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Skull법에 의한 Cubic Zirconia 단결정 성장 (Single Crystals Growth of Cubic Zirconia by Skull Method)

  • 김석호;최종건;오근호;조영환;김영준;오봉인;강원호
    • 한국세라믹학회지
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    • 제25권2호
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    • pp.161-167
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    • 1988
  • Yttria-Stabilized Cubic Zirconia Crystals with Various Y2O3 amounts (6-15mol%) were grown by the Skull melting technique. The modeling of the nucleation at the Skull bottom and the best growth condition were studied. The abrupt changes in generator heating Power and lowering rate of crucible caused the dendritic growth in the grown crystal. The optimum condition of cubic Zirconia single crystals was obtained when the lowering rate was gradually increased. The effect of Y2O3 amounts on the perfection adn the color of the grown crystal were determined. The darkish color generated in the crystals added Y2O3 amounts over 12mol% was eliminated by the annealing in air at 1200$^{\circ}C$ for 24hrs.

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플라즈마 도핑 후 급속열처리법을 이용한 n+/p 얕은 접합 형성

  • 도승우;서영호;이재성;이용현
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.50-50
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    • 2009
  • In this paper, the plasma doping is performed on p-type wafers using $PH_3$ gas(10 %) diluted with He gas(90 %). The wafer is placed in the plasma generated with 200 W and a negative DC bias (1 kV) is applied to the substrate for 60 sec under no substrate heating. the flow rate of the diluted $PH_3$ gas and the process pressure are 100 sccm and 10 mTorr, respectively. In order to diffuse and activate the dopant, annealing process such as rapid thermal annealing (RTA) is performed. RTA process is performed either in $N_2$, $O_2$ or $O_2+N_2$ ambient at $900{\sim}950^{\circ}C$ for 10 sec. The sheet resistance is measured using four point probe. The shallow n+/p doping profiles are investigated using secondary ion mass spectromtry (SIMS). The analysis of crystalline defect is also done using transmission electron microscopy (TEM) and double crystal X-ray diffraction (DXRD).

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2단계 RTD방법에 의한 $N^+P$ 접합 티타늄 실리사이드 특성연구 (The characterization for the Ti-silicide of $N^+P$ junction by 2 step RTD)

  • 최도영;윤석범;오환술
    • E2M - 전기 전자와 첨단 소재
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    • 제8권6호
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    • pp.737-743
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    • 1995
  • Two step RTD(Rapid Thermal Diffussion) of P into silicon wafer using tungsten halogen lamp was used to fabricated very shallow n$^{+}$p junction. 1st RTD was performed in the temperature range of 800.deg. C for 60 see and the heating rate was in the 50.deg. C/sec. Phosphrous solid source was transfered on the silicon surface. 2nd RTD process was performed in the temperature range 1050.deg. C, 10sec. Using 2 step RTD we can obtain a shallow junction 0.13.mu.m in depth. After RTD, the Ti-silicide process was performed by the two step RTA(Rapid Thermal Annealing) to reduced the electric resistance and to improve the n$^{+}$p junction diode. The titanium thickness was 300.angs.. The condition of lst RTA process was 600.deg. C of 30sec and that of 2nd RTA process was varied in the range 700.deg. C, 750.deg. C, 800.deg. C for 10sec-60sec. After 2 step RTA, sheet resistance was 46.ohm../[]. Ti-silicide n+p junction diode was fabricated and I-V characteristics were measured.red.

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PET부분배향사(POY)의 열처리에 따른 내부구조 및 물성변화 (The Changes of the Microstructure and the Physical Properties of Heat Set PET Partially Oriented Yarns)

  • 최종명;조길수
    • 한국의류학회지
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    • 제12권3호
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    • pp.343-350
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    • 1988
  • This study was carried out to investigate the microstructure and physical property of PET POY which was taut-annealed under various conditions. The DSC melting curves of annealed PET POY showed double melting peaks in most cases. As temperature and time increased, form II crystal became sharp and increased in size, and form I crystal decreased in size. The slower the heating rate, the higher the programmed heating effect during DSC analysis. Crystallinity and briefringence of annealed specimens increased as the treatment temperature and time increased. Breaking tenacity of specimens treated for 3 minutes increased as the treatment temperature increased, but others decreased. Elongation at break decreased as the annealing temperature and time increased. Dye uptake of annealed specimens decreased as the temperature increased up to $190^{\circ}C\~210^{\circ}C$. then the uptakes increased at higher temperatures. At the same temperature, dye uptake of the specimen decreased as time increased.

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Mo-25.0at%Si 혼합분말의 기계적 합금화에 미치는 밀링매체 재료의 영향 (Effect of Milling Medium Materials on Mechanical Alloying of Mo-25.0at%Si Powder Mixture)

  • 박상보
    • 한국분말재료학회지
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    • 제5권1호
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    • pp.64-70
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    • 1998
  • Milling media of steel and partially stabilized zirconia(PSZ) were used to produce $Mo_3$Si by mechanical alloying(MA) of Mo-25.0at%Si elemental powder mixture. The effect of milling medium materials on MA of the powder mixture have been investigated by XRD and DTA. The reaction rate and the end-product noticeably depended upon the milling medium material. The formation of $Mo_3$Si and $Mo_5Si_3$phases by PSZ ball-milling took place after 15 hr of MA and was characterized by a slow reaction rate as Mo, Si, $Mo_5Si_3$ and $Mo_3$Si coexisted for a long period of milling time. The formation of a new phase by steel ball-milling, however, did not take Place even after 96 hr of MA. DTA and annealing results showed that $Mo_5Si_3$ and $Mo_3$Si were formed after heating the ball-milled powder specimens to different temperatures. At low temperatures, Mo and Si were transformed into $Mo_5Si_3$. At high temperatures, the formation of $Mo_3$Si can be partially attributed to the reaction, 7Mo+Si+$Mo_5Si_3$-.4$Mo_3$Si . The formation of $Mo_3$Si and Mo5Si3 phases by mechanical alloying of the powder mixture and the relevant reaction rate appeared to depend upon the milling medium material as well as the thermodynamic properties of the end-products.

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무정형 PET 재료의 플라스틱 냉간 변형에서의 열처리 효과 (Annealing Effect in the Cold-Plastic Deformation of Amorphous PET Material)

  • 이종영;박성수
    • 폴리머
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    • 제25권1호
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    • pp.56-62
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    • 2001
  • Polyethylene terephthalate(PET) 필름 시편을 약 0.5~500 mm/min의 속도까지 단계적으로 연신시켰을 때, 플라스틱 변형이 일어나는 동안에 투명 및 불투명 밴드들이 존재하는 넥킹영역이 형성되었다. 상기 시편의 응력-변형 곡선을 살펴보면, 응력 진동이 뚜렷하게 발생하였음을 확인할 수 있었다. 한편, 열처리된 시편의 응력-변형 곡선을 살펴보면, 응력 진동이 발생하지 않았음을 확인할 수 있었다. 시편들의 미세구조는 광학 현미경을 통하여 동적으로 관찰하였고, 시편들의 열적 특성은 시차 주사 열량기를 사용하여 10 ${\circ}C$/min의 승온 속도에서 측정하였다. 또한, 시편들의 배향화 및 결정화 정도는 단색-핀홀법을 이용하여 측정하였고, 시편들의 탄성계수는 동적 기계 분석기를 통하여 -150~70 ${\circ}C$의 온도 범위에서 1 Hz의 주파수 대에서 측정하였다. PET 펠렛을 전기로에서 약 83${\circ}C$에서 30분 동안 열처리하여 투명한 PET 제품을 제작하였다.

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열처리용 복사튜브의 국부 과열 해소 (Prevention of local overheating of a radiant tube heater)

  • 김형수
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2004년도 제5회 압연심포지엄 신 시장 개척을 위한 압연기술
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    • pp.119-125
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    • 2004
  • Radiant tube heaters are widely used for indirect heating in heat treatment processes such as continuous annealing line(CAL) or continuous galvanizing line(CGL). Main issues for radiant tube are temperature uniformity, lifetime, thermal efficiency. To achieve higher heat release, the radiant tubes are fired at a higher fuel rate and therefore local overheating occur. A numerical simulation based on a commercial code FLUENT has been performed to investigate local overheating of radiant tube heaters. To minimize local overheating, the effects of radiating fins, flue gas recirculation(FGR), two-stage combustion were investigated. More uniform temperature distribution was achieved in the longitudinal direction within the tube with radiating fins and this contributed to increase the life of radiant tubes. Furthermore, the radiant tube with radiating fins was proven to be more efficient than the one without fins. The effects of flue gas recirculation and two stage combustion on the efficiency of the radiant tube were also considered and the results were presented.

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X-선 회절 분석을 통한 고온 피해 시멘트 경화체의 성분 변화 분석 (Analysis of the Changes of composition of Hardened Cement at High Temperature by X-Ray Diffraction)

  • 지우람;박지웅;신기돈;이건철;허영선
    • 한국건축시공학회:학술대회논문집
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    • 한국건축시공학회 2017년도 추계 학술논문 발표대회
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    • pp.113-114
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    • 2017
  • In this study, the change of composition of cement hardened at high temperature through XRD was observed. The specimen was made of cement paste and the heating rate condition was applied at rapid thermal annealing (10.0℃ / min). The decrease of calcium hydroxide was not confirmed, but the calcium carbonate tended to be impossible or decreased after 800℃. Calcium silicate and larnite were observed to increase with increasing temperature. It is considered that silicic acid, which is a stable structure due to the decomposition of calcium silicate, is changed into a phase such as lime.

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측온저항체 온도센서가 집적화된 발열저항체형 마이크로 유량센서의 제작 및 특성 (Fabrication and Characteristics of Hot-Film Type Micro-flowsensors integrated with RTD)

  • 정귀상;홍석우
    • 한국전기전자재료학회논문지
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    • 제13권7호
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    • pp.612-616
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    • 2000
  • This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD(resistance thermometer device) and micro-heater on the Si membrane in which MgO thin-film was used as medium layer in order to improve adhesion of Pt thin-film to SiO$_2$layer. The MgO layer improved adhesion of Pt thin-film to SiO$_2$layer without any chemical reactions to Pt thin-film under high annealing temperatures. Output voltages increased due to increase of heat-loss from sensor to external. The output voltage was 82 mV at $N_2$flow rate of 2000 sccm/min heating power of 1.2 W. The response time($\tau$:63%) was about 50 msec when input flow was stepinput

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