• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.28-32
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• 2000

Structural and electrical properties of (Ba, Sr)TiO\ulcorner (BST) thin films prepared by pulsed laser depositon were investigated to verify the influences of post-annealing in oxygen ambient. Increase of post-anneal-ing time in oxygen ambient resulted in not only grain growth but also improvement of crystallinity of BST films. Although the post-annealing in oxygen ambient resulted in the increase of surface roughness, it assisted the dielectric constant increase by eliminating oxygen vacancies. The electrical property enhancement including high dielectric constant and low leakage current density was associated with introducing high pressure of oxygen during the post-annealing.

• Journal of Sensor Science and Technology
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• v.18 no.4
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• pp.316-321
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• 2009

Er-doped ZnO(ZnO:Er) films were deposited onto MgO wafers by ultrasonic spray pyrolysis at 550 $^{\circ}C$ varying the concentration of Er in the deposition source from 0.5 wt% to 3.0 wt%. Annealing of the films in a vacuum was carried out to increase the intensity of ultraviolet(UV) emission from the films. The annealing temperature was between 600$^{\circ}C$ and 800$^{\circ}C$. The crystallographic properties and surface morphology of the films were investigated by X-ray diffraction(XRD)and scanning electron microscope(SEM), respectively. The properties of photoluminescence(PL) for the films were investigated by the dependence of PL spectra on the annealing temperature. X-ray photoelectron spectroscopy(XPS) was conducted to find the composition change in the films by the annealing.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.98-101
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• 2006

Electron transport properties of nanostructured Pb thin film, consisting of grains, have been studied. Nanostructured thin films were fabricated on a substrate held at low temperature and their thicknesses were less than 10nm. While temperature of the film increased from 1.3 K to room temperature, the change in normal state sheet resistance has been measured. As the annealing temperature varies, the normal state sheet resistance shows a non-monotonic and irreversible change. Such behavior can be understood with the Pb grain growth due to annealing of the film.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.10a
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• pp.120-123
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• 2007

The effects of annealing condition on the occurrence of the delamination in cold drawn hyper-eutectoid steel wires, were investigated. Annealing treatment was performed on cold drawn steel wires for temperature range of $425^{\circ}C\sim500^{\circ}C$ with the variation of annealing time from 30sec to 15min. The increase of annealing temperature and time would cause the decrease of tensile strength and the increase of ductility. However, the occurrence of the delamination, representing torsional ductility, showed the different way from the variation of ductility.

• Journal of the Korean institute of surface engineering
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• v.24 no.4
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• pp.196-205
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• 1991

Multi-level thin films are very important in ULSI applications because of their high electromigration resistance. This study presents the effects of titanium, titanium nitride and titanium tungsten underlayers of the stability of multi-aluminum thin films during isothermal annealing. High purity Al(99.999%) films have been electron-beam evaporated on Ti, TiN, TiW films formed on SiO2/Si (P-type(100))-wafer substrates by RF-sputtering in Ar gas ambient. The hillock growth was increased with annealing temperatures. Growth of hillocks was observed during isothermal annealing of the thin films by scanning electron microscopy. The hillock growth was believed to appear due to the recrystallization process driven by stress relaxation during isothermal annealing. Thermomigration damage was also presented in thin films by grain boundary grooving processes. It is shown that underlayers of Al/TiN/SiO2, Al/TiW/SiO2 thin films are preferrable to Al/SiO2 thin film metallization.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.3
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• pp.103-108
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• 2005

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266nm. Before post-annealing treatment in the oxygen ambient, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $300\~450^{\circ}C$ and oxygen gas flow rate of $100\~700\;sccm$. In order to investigate the effect of post-annealing treatment of ZnO thin films, films have been annealed at various temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM) and the optical properties of the ZnO were characterized by photoluminescence(PL).

• Journal of the Korean Society for Heat Treatment
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• v.25 no.2
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• pp.85-89
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• 2012

Transparent conductive ZnO/Ag/ZnO (ZAZ) multilayer films were deposited by Radio frequency (RF) magnetron sputtering and direct current (DC) magnetron sputtering. The effects of post deposition vacuum annealing temperature on the structural, electrical and optical properties of the ZAZ multilayer films were investigated. The thickness of ZAZ films is kept constant at ZnO 50 nm/Ag 5nm/ZnO 45 nm, while the vacuum annealing temperatures were varied from 200 and $400^{\circ}C$, respectively. As-deposited ZAZ films exhibit a sheet resistance of $6.1{\Omega}/{\Box}$ and optical transmittance of 72.7%. By increasing annealing temperature to $200^{\circ}C$, the resistivity decreased to as low as $5.3{\Omega}/{\Box}$ and optical transmittance also increased to as high as 82.1%. Post-deposition annealing of ZAZ multilayer films lead to considerably lower electrical resistivity and higher optical transparency, simultaneously by increased crystallization of the films.

• Korean Journal of Metals and Materials
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• v.49 no.10
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• pp.790-796
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• 2011

To reduce the heat released during intermetallic reaction, Ni-50at%Al powder compact has been previously annealed at several conditions before the reaction. The effects of the pre-annealing conditions on the reaction synthesis process have been investigated. Experimental results show that the heat released during the reaction synthesis decreased proportionally with increase of the pre-annealing temperature and duration time. The reaction duration period was significantly increased when the intermetallics were formed in the powder compact during the pre-annealing. This was attributed to the fact that the reaction occurred by solid-state diffusion between the un-reacted elemental atoms and that the $NiAl_3$ phase formed predominantly during pre-annealing.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.633-636
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• 2003

In this work, We, for the first time, present the effects of the thermal annealing of the W/SiO$_2$ multi-layer quarter wavelength reflectors on the resonant properties of the ZnO-based SMR devices. In order to improve the resonant properties of the SMR devices, we annealed thermally the reflectors formed on a silicon substrate using a RF magnetron sputtering technique. As a result, the resonant properties of the SMR devices were observed to strongly depend on the annealing conditions applied to the reflectors. The SMR devices with the reflectors annealed at 40$0^{\circ}C$/30min showed excellent resonance properties as compared to those with the reflectors non-annealed (as-deposited). The newly proposed simple thermal annealing process will be very useful to more effectively improve the resonant properties of the future SMR devices with W/SiO$_2$ multi-layer quarter wavelength reflectors.

• Journal of the Korean Society for Heat Treatment
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• v.19 no.3
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• pp.149-155
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• 2006

The effects of eight types of spheroidizing annealing conditions including annealing temperature, annealing time, cooling rate, and gas atmosphere in the annealing furnace on the microstructure were determined in SM45C steel which has been widely used for automotive parts. The well-developed spheroidized structure and minimum hardness were obtained when the steel was heat-treated 6 hours at $740^{\circ}C$, cooled to $710^{\circ}C$ at a cooling rate of $24^{\circ}C/h$, and then kept for 7 hours at the $710^{\circ}C$ followed by air cooling. In order to increase the productivity and to save the manufacturing cost, it is desirable to apply a faster cooling rate in the spheroidizing annealing. It was found that air cooling was the fastest cooling rate applicable to the SM45C steel. The steel heat treated in air showed the decarburized layer of about $110{\mu}m$ in thickness at the surface of the specimen, resulting in serious problems in the quality of the quenched product.