• 한국소음진동공학회논문집
• /
• 제13권10호
• /
• pp.743-750
• /
• 2003

The equivalent source method(ESM) is used for the calculation of the internal pressure field for an enclosure which can have arbitrary boundary conditions and nay include internal objects which scatter the sound field. The advantage of using ESM is that it requires relatively low computing cost and is easy to model the internal diffracting objects. Typical ESM modeling uses two groups of equivalent source positions. One group includes the first order images of the source inside the enclosure. The Positions of the other group are usually on a spherical surface some distance outside the enclosure. The normal velocity on the surfaces of the enclosure walls is evaluated at a larger number of positions than there are equivalent sources. The sum of the squared difference between this velocity and the expected is minimized by adjusting the strength of the equivalent sources. This study is on the optimal far field sources positions when using the equivalent source method. In general, the far field sources are evenly distributed on a surface of a virtual sphere which is centered at the enclosure with a sufficiently large radius. In this study. optimal far field source locations are searched using simulated annealing method for various radii of spheres where far field sources are located. Simulation results showed that optimally located sources with adequate distance away from the enclosure center gave better result than sources with even distribution even with a smaller number of far field sources.

• 한국의류학회지
• /
• 제13권4호
• /
• pp.427-436
• /
• 1989

Poly (vinyl alcohol) films, which .were annealed at various different annealing conditions, were carried out by uniaxial stretching them with free width in water and were investigated drawing behaviours and rupture phenomena. l) After dipping the specimen into the water, it took about 15 min. for the specimen's swelling to approach to equilibrium. 2) When the film annealed at $180^{\circ}C$ for 10 min. was drawn at $20^{\circ}C$. it was shown very toughness. 3) By means of birefringence measurements, the total molecular orientation of the annealed films increased until the draw ratio of 4, but drawing them above the draw ratio of 5, that of untreated films increased. 4) In the case of the mechanical properties of the drawn films. the annealed films tended to good trend for the draw ratios between 1 and 4. but drawing them above the draw ratio of 5. the untreated films tended to good trend for them.

• Journal of Korean Vacuum Science & Technology
• /
• 제7권2호
• /
• pp.33-38
• /
• 2003

Fluorinated amorphous carbon thin films (a-C:F) for the use of low dielectric constant intermetallic layer dielectrics are deposited by plasma enhanced chemical vapor deposition with $C_4$F$_{8}$ and Si$_2$H$_{6}$/He gas mixture as precursors. To characterize and improve film properties, we changed various conditions such as deposition temperature, and RF power, and we measured the thickness and refractive indexes and FT-IR spectrum before and after annealing. At low temperatures the film properties were very poor although the growth rate was very high. On the other hand, the growth rate was low at high temperature. The growth rate increased in accordance with the deposition pressure. The dielectric constants of samples were in the range of 1.5∼5.5∼5.

• 전자공학회논문지A
• /
• 제32A권8호
• /
• pp.78-85
• /
• 1995

We fabricated the Pb$_{1-0.28{\alpha}}La_{0.28}TiO_{3}$ (PLT(28)) thin film successfully by using the sol-gel method and characterized it to evaluate its potential for being utilized as the capacitor dielectrics of ULSI DRAMs. In our sol-gel process, the acetates were used as the starting materials. Through the TGA-DTA analysis, we established the excellent fabrication conditions of the sol-gel method for the PLT(28) thin film. We obtained the dense and crack-free PLT(28) thin film of 100% perovskite phase by drying at 350$^{\circ}C$ after each coating and final annealing at 650$^{\circ}C$. Its electrical properties were measured from the planar capacitors fabricated on the Pt/Ti/SiO$_{2}$/Si substrate. By the P-E hysteresis measurement, its paraelectric phase was identified and its dielectric constant and leakage current density were measured as 936 and 1.1${\mu}A/cm^{2}$, respectively. Those electrical values indicate that the PLT(28) thin film is the most successful candidate for the capacitor dielectrics of ULSI DRAMs at the present.

• Composites Research
• /
• 제23권5호
• /
• pp.30-38
• /
• 2010

성형조건에 따른 GMT-Sheet를 관찰하여, 성형품 표면의 불량원인을 조사했다. 현미경 관찰 결과, GMT-Sheet 성형품의 표면에서 구정, 섬유돌출, 크랙, 섬유노출, 마이크로 웰드라인, 핀홀, 여파굴곡곡선 등의 결함을 발견했다. 이 결함들은 요철의 발생원인이고, 표면 광택에 영향을 주는 현상이다. 그리고 표면거칠기에 영향을 주는 요철의 가장 주요한 발생원인은 보압 냉각 과정에서 발생하는 모재의 수축이었다. 성형 시의 보압하중이 높을수록 GMT-Sheet 성형품 표면은 좋아졌다. 또한 서냉실험에서는 탈형온도가 낮을수록 성형품의 표면이 좋아졌다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.272-272
• /
• 2014

SnO thin films, 100 nm in thickness, were deposited on glass substrates by RF magnetron sputtering. A stack structure of $SnO_2/SnO$, where few nanometers of $SnO_2$ were determined on the SnO thin film by X-ray photoelectron spectroscopy. In addition, XPS depth profile analysis of the pristine and heat treated thin films were introduced. The electrical behavior of the as-sputtered films during the annealing was recorded to investigate the working conditions for the SnO sensor. Subsequently, The NH3 sensing properties of the SnO sensor at operating temperature of $50-200^{\circ}C$ were examined, in which the p-type semiconducting sensing properties of the thin film were noted. The sensor shows good sensitivity and repeatability to $NH_3$ vapor. The sensor properties toward several gases like $H_2S$, $CH_4$ and $C_3H_8$ were also introduced. Finally, a sensing mechanism was proposed and discussed.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
• /
• pp.247-250
• /
• 2001

We studied optical properties of SiON thin-film in the applications of optical waveguide. SiON thin-film was grown in $300^{\circ}C$ by PECVD(plasma enhanced chemical vapor deposition) system. The change of SiON thin-film composition and refractive Index was studied as a function of varying $NH_3$ gas flow rate. As $NH_3$ gas flow rate was increased, Quantity of N and refractive index were increased at the same time. By the results, we could form the SiON thin-film to use of a waveguide with refractive index of 1.6. We analyzed the conditions of the thin-film with FTIR(fourier transform infrared) and OES (optical emission spectroscopy). N-H bonding($3390cm^{-1}$ ) can be removed by thermal annealing. And we could observe the SiH bonding state and quantity by OES analysis in $SiH_4$

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
• /
• pp.160-163
• /
• 2003

This paper describes on anodic bonding characteristics of MLCA(Multi Layer Ceramic Actuator) to Si-wafer using evaporated Pyrex #7740 glass thin-films for MEMS applications. Pyrex #7740 glass thin-films with same properties were deposited on MLCA under optimum RF magneto conditions(Ar 100 %, input power $1\;/cm^2$). After annealing in $450^{\circ}C$ for 1 hr, the anodic bonding of MLCA to Si-wafer was successfully performed at 600 V, $400^{\circ}C$ in - 760 mmHg. Then, the MLCA/Si bonded interface and fabricated Si diaphragm deflection characteristics were analyzed through the actuation test. It is possible to control with accurate deflection of Si diaphragm according to its geometries and its maximum non-linearity is 0.05-008 %FS. Moreover, any damages or separation of MICA/Si bonded interfaces do not occur during actuation test. Therefore, it is expected that anodic bonding technology of MICA/Si wafers could be usefully applied for the fabrication process of high-performance piezoelectric MEMS devices.

• 한국분말재료학회지
• /
• 제17권4호
• /
• pp.295-301
• /
• 2010

Multi shell graphite coated Ag nano particles with core/shell structure were successfully synthesized by pulsed wire evaporation (PWE) method. Ar and $CH_4$ (10 vol.%) gases were mixed in chamber, which played a role of carrier gas and reaction gas, respectively. Graphite layers on the surface of silver nano particles were coated indiscretely. However, the graphite layers are detached, when the particles are heated up to $250^{\circ}C$ in the air atmosphere. In contrast, the graphite coated layer was stable under Ar and $N_2$ atmosphere, though the core/shell structured particles were heated up to $800^{\circ}C$. The presence of graphite coated layer prevent agglomeration of nanoparticles during heat treatment. The dispersion stability of the carbon coated Ag nanoparticles was higher than those of pure Ag nanoparticles.

• 한국진공학회지
• /
• 제4권3호
• /
• pp.306-312
• /
• 1995

본 연구에서는 비정질 실리콘과 CuInSe2와 함께 지상용 태양전지재료로 널리 연구되고 있는 다결정 CdTe 박막의 열처리방법으로서 로열처리와 반도체 공정에서 사용되는 급속열처리 방법을 이용하여 이들 열처리의 효과를 분석함으로써 태양전지용 다결정 CdTeq 박막에 적합한 효율적인 열처리 방법에 대한 연구를 수행하였다. 증착 후 열처리조건에 따른 결정구조, 결정립 크기, 표면과 박막내부의 성분, 밴드갭 에너지값, 그리고 전기비저항 등을 측정하여 태양전지용 CdTe 박막의 물리적.전기적 특성에 미치는 열처리효과를 관찰하였다. 연구결과 30$0^{\circ}C$에서 증착하고 CdCI2 처리 후 $400^{\circ}C$ 30분간 로열처리를 한 경우, 그리고 $200^{\circ}C$에서 증착한 후 $500^{\circ}C$ 부근에서 1분간 급속열처리를 한 경우 다결정 CdTe 박막의 물리적 전기적 특성이 현저히 향상됨을 알 수 있었다. 특히 급속열처리를 한 경우 로열처리에 비해 결정립의 크기는 작으나 전기비저항이 낮고 밴드갭에너지가 단결정에 더욱 접근하며 태양전지용 다결정 CdTe 박막의 열처리 방법으로 적용할 가치가 있는 방법으로 사료된다.