• 한국전기전자재료학회논문지
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• 제29권4호
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• pp.215-217
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• 2016

For the improvement of the anti-pollution properties of porcelain electrical insulators, in this study, we have applied the functional film to the surface of insulator. The functional films were coated on the ceramic substrates which components were like the porcelain electrical insulator. The coating material was applied to ceramic substrate by spray coating method and then the film was cured at around $300^{\circ}C$ for 10 minutes with different gas ambient, such as $O_2$, $N_2$, and only vacuum. We have measured the contact angle of the coated surface, and obtained the lowest angle ($8.9^{\circ}$) and a strong hydrophilic property at vacuum condition. The anti-pollution properties were measured, revealing that as the contact angle decreased, the anti-pollution properties improved. The mechanical hardness and adhesion were both excellent regardless of the annealing ambient.

• 한국전기전자재료학회논문지
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• 제20권3호
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• pp.207-212
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• 2007

The concentration profiles of deep energy levels($E_c$ -0.23e V, $E_v$+0.36e V and $E_c$ -0.23e V) in platinum-diffused silicon have generally a sharp gradient in the vicinity of the surface of the silicon wafer. In this work two efficient methods are proposed to obtain the uniform concentration profiles throughout the silicon wafer. One is that the platinum diffusion is carried out at $1000^{\circ}C$ for 1h in oxygen atmosphere. In this case the values of obtained uniform concentration, $1{\times}10^{15}cm^{-3}$ for the $E_c$ -0.23e V level, and 1{\times}10^{14}cm^{-3}$ for the $E_c$ -0.52e V level, are very restricted, respectively. The other is two-step annealing process. The platinum diffusion is carried out at $850{\sim}1100^{\circ}C$ in a nitrogen ambient for 1h and then the annealing is performed at $1000^{\circ}C$ in oxygen ambient after removing platinum-source from the platinum diffused samples. The advantage of this method is that the uniform concentration of these levels required power devices can be controlled by setting the desired temperatures when the platinum diffusion is carried out in nitrogen ambient.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1627-1630
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• 2004

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266nm. Before post-annealing treatment in the oxygen ambient, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $300{\sim}450^{\circ}C$ and flow rate of 100${\sim}$700 seem. In order to investigate the effect of post-annealing treatment of ZnO thin films, films have been annealed at various temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by X-ray diffraction(XRD) and the optical properties of the ZnO were characterized by photoluminescence(PL).

• 한국진공학회지
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• 제8권3A호
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• pp.218-223
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• 1999

We investigated the interfacial reactions between the $Y_2O_3$ film deposited by ICB processing and p-type (100) Si substrates upon annealing treatments in $O_2$ and Ar gas ambients. we also investigated the evolution of surface morphology of ICB deposited $Y_2O_3$ films upon annealing treatments. We observed that the root-mean-square(RMS) value of surface roughness measured by AFM increased with annealing time at $800^{\circ}C$ in $O_2$ ambient, while the change of surface roughness was not observed in Ar ambient. We also found the growth of $SiO_2$ layer and the formation of yttium silicate layer. From the capacitance values $(C_{acc})$ measured by C-V measurements, the relative didldctric constant of $Y_2O_3$ film in metal-insulator-semiconductor(MIS) structure was estimated to be about 9.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권9호
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• pp.423-429
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• 2002

RuOx thin films were fabricated by the method of liquid delivery MOCVD using Ru(C$_{8}$ $H_{13}$ $O_2$)$_3$ as the precursor and their thermal effects and conductivity were investigated. Ru films deposited at 25$0^{\circ}C$ were annealed at $650^{\circ}C$ for 1min with Ar, $N_2$ or N $H_3$ ambient. The changes of the micro-structure, the surface morphology and the electrical resistivity of the Ru films after annealing were studied. Ar gas was more effective than $N_2$ and N $H_3$ gases as an ambient gas for the post annealing of the Ru films, because of smaller resistivity and denser grains. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that the Ru $O_2$ phase and the silicidation are not observed regardless of the ambient gases. The minimum resistivity of the Ru film is found to have the value of 26.35 $\mu$Ω-cm in Ar ambient. Voids were formed at Ru/TiN interface of the Ru layer after annea1ing in $N_2$ ambient. The $N_2$ gas generated due to the oxidation of the TiN layer accumulated at the Ru/TiN interface, forming bubbles; consequently, the stacked film may peel off the Ru/TiN interface.e.

• 전자공학회논문지A
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• 제33A권3호
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• pp.126-134
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• 1996

Tungsten silicide films were deposited on the phosphorus-doped poly-Si/SiO$_{2}$/Si-substrates by LPCVD (low pressue chemical vapor deposition). The formation and various properties of tungsten silicide processed by furnace annealing in N$_{2}$ ambient were evaluated by using XRD. AFM, 4-point probe and SEM. And the redistribution of phosphorus atoms has been observed by SIMS. The crystal structure of the as-deposited tungsten silicide films were transformed from the hexagonal to the tetragonal structure upon annealing at 550.deg. C. The surface roughness of tungsten polycide films were found to very smoothly upon annelaing at 850.deg. C and low phosphorus concentration in polysilicon layer. The sheet resistance of tungsten polycide low phosphorus concentration in polysilicon layer. The sheet resistance of tungsten polycide films are measured to be 2.4 .ohm./ㅁafter furnace annealing at 1100.deg. C, 30min. It was found that the sheet resistance of tungsten polycide films upon annealing above 1050.deg. C were independant on the phosphorus concentration of polysilicon layer and furnace annealing times. An out-diffusion of phosphorus impurity through tungsten silicide film after annealing in $O_{2}$ ambient revealed a remarkably low content of dopant by oxide capping.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.885-888
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• 2000

The effects of deposition temperature and post annealing process of ferroelectric PbZr$\sub$0.52/Ti$\sub$0.48/O$_3$(PZT) thin films by pulsed laser deposition (PLD) were investigated. The PZT thin films were deposited at 400, 450, 500, and 550$^{\circ}C$, with/without post annealing at 650$^{\circ}C$ for 30 min. The PZT thin films deposited above 500$^{\circ}C$ without post annealing were crystallized into peroveskite phase, but the PZT thin films deposited below 450$^{\circ}C$ had pyrochlore phase. The PZT thin films deposited below 450$^{\circ}C$ with post annealing also crystallized into pure perovskite. Compared to the PZT thin films which were deposited at 450$^{\circ}C$ and post annealed, the films deposited at 550$^{\circ}C$ have a columnar microstructure and high remnant polarization 28 (${\mu}$C/cm$^2$). With in-situ annealing at oxygen ambient, the PZT thin films reduced oxygen vacancies and increased retained polarization.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.36-37
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• 2006

Titanium oxy-nitride ($TiN_O_y$) thin films were deposited on $SiO_2$/Si substrates using reactive dc magnetron sputtering, and were then annealed at various temperatures in air ambient to incorporate oxygen into the films. The effect of annealing temperature on the structural and electrical properties of the films was investigated. The grain size of the films decreases with increasing annealing temperature. On the other hand, crystallinity of the films is independent of annealing temperature in air ambient. Resistivity of the films increases remarkably as an annealing temperature increases and temperature coefficience of resistance (TCR) of the films varies from a positive value to a negative value. The films annealed at $350^{\circ}C$ for 30 min exhibited a near-zero TCR value of approximately -5 ppm/K. The decrease of the grain size with increasing annealing temperature was attributed to an increase of oxygen concentration incorporated into the films during anncaling treatment.

• 센서학회지
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• 제5권3호
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• pp.101-108
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• 1996

Au 또는 Pt를 확산시켜 실리콘 $p^{+}-n$ 접합 다이오드를 제작하였다. Au 또는 Pt의 확산을 $800{\sim}1010^{\circ}C$, 산소 및 질소분위기에서 실시하여 다이오드의 전기적 특성을 분석하였으며, Au 또는 Pt가 확산된 시편을 산소분위기의 $800{\sim}1010^{\circ}C$에서 2차 열처리를 실시한후 이 처리가 소자의 전기적 특성에 미치는 효과에 대해 고찰하였다. $1010^{\circ}C$의 온도에서 1차 확산결과 Pt가 확산된 다이오드의 누설전류는 Au가 확산된 다이오드 누설전류의 75배 였다. $1010^{\circ}C$, 질소분위기에서 1시간동안 Pt가 확산된 시편을 산소분위기에서 $800^{\circ}C$, 1시간동안 2차 열처리하였을 경우에 1차 열처리한 것보다 누설전류가 1/1100로 감소되었다. 초고속 실리콘 $p^{+}-n$ 접합 스위칭 다이오드의 특성을 만족하기 위해서는, Pt를 $1010^{\circ}C$, 질소분위기에선 1시간 확산시킨후 2차 열처리를 $800^{\circ}C$, 산소분위기에서 1시간동안 열처리하는 것이 최적 조건임을 알 수 있었다. 이때 다이오드의 제특성은 역회복시간 4ns, 항복전압 138V, 누설전류1.7nA 그리고 순방향 전압이 1V였다.

• 한국재료학회지
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• 제12권5호
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• pp.382-386
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• 2002

We studied growth and characterization of $SrBi_2Ta_2O_9$ (SBT) thin films fabricated by low temperature process under vacuum and/or oxygen ambient. A metal organic decomposition (MOD) method based on a spin-on technique and annealing process using a rapid thermal annealing (RTA) method was used to prepare the SBT films. The crystallinity of a ferroelectric phase of SBT thin films is related to the oxygen partial pressure during RTA process. Under an oxygen partial pressure higher than 30 Torr, the crystallization temperature inducing the ferroelectric SBT phase can be lowered to $650^{\circ}C$. Those films annealed at $650^{\circ}C$ in vacuum and oxygen ambient showed good ferroelectric properties, that is, the memory window of 0.5~0.9 V at applied voltage of 3~7 V and the leakage current density of 1.80{\times}10^{-8}$ A/$\textrm{cm}^2$ at an applied voltage of 5V. In comparison with the SBT thin films prepared at 80$0^{\circ}C$ in $O_2$ ambient by furnace annealing process, the SBT thin films prepared at $650^{\circ}C$ in vacuum and oxygen ambient using the RTA process showed a good crystallization and electrical properties which would be able to apply to the virtul device fabrication precess.