• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.74.1-74.1
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• 2010

단결정 실리콘 태양전지 공정에서 이방성 습식 식각 용액을 이용하여 기판 표면에 피라미드 구조를 형성하는 것을 텍스쳐링이라고 한다. 실리콘 기판의 표면을 식각하여 요철구조를 만들어줌으로써 셀 내부로 입사되는 광량을 증가시켜 태양전지의 단락 전류 및 효율 향상 효과를 얻을 수 있다. 일반적인 태양전지 공정에서는 요철구조를 형성할 시 따로 마스크를 사용하지 않으며, 태양전지 급 웨이퍼를 절삭손상층 식각 한 후, 강염기성 용액과 알코올의 혼합용액에 담가서 이방성 식각을 실시하여 요철 구조를 형성한다. 본 연구는 기존의 텍스쳐링 공정에서 사용되는 대표적인 용액인 수산화칼륨(potassium hydroxide, KOH)과 알코올의 혼합용액과 사메틸수산화암모늄(Tetramethylammonium Hydroxide, TMAH)과 알코올의 혼합용액에 Triton X-100 계면활성제를 각각 첨가하여 실험을 진행하였다. 식각된 태양전지용 실리콘 기판의 표면은 주사전자현미경(Scanning Electron Microscope)을 통하여 관찰하였고, 분광광도계(UV/VIS/NIR Spectrophotometer)로 반사도 값을 측정하여 기판의 특성을 평가하였다.

• 전자공학회논문지A
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• 제30A권7호
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• pp.60-74
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• 1993

Experiments of RIE of tungsten films using SF$_{6}$ plasma were conducted to investigate the effect of process parameters on etch rate, uniformity, anisotropy, and selectivity. As power increased, the etch rate increased. Maximum etch rate was obtained at 200mtorr As interelectrode spacing increased the etch rate increased for P < 200mtorr while it decreased for P> 200mtorr. Etch rate was maximum at 20 sccm gas flow rate. As substrate temperature increased, the etch rate increased and activation energy was 0.046 eV. In addition, maximum etch rate was acquired at 20% $O_{2}$ addition. The etch rate slightly increased when Ar was added up to 20% while it continuously decreased when N$_{2}$ was added. Uniformity got improved as pressure decreased and was less than 4% for P <100mtorr. Mass spectrometer was utilized to analyze gas composition and S and F peaks were observed from XPS analysis with increasing power. The anisotropy was better for smaller power and spacing, and lower pressure and temperature. It improved when CH$_{4}$ was added and anisotropic etch profile was obtained when about 10% $O_{2}$ was added. The selectjvity was better for smaller power larger pressure and spacing, and lower temperature. Especially. low temperature processing was proposed as a novel method to improve the anisotropy and selectivity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.413-413
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• 2009

Silicon nanowires (Si NWs)-based top-gate field-effect transistors (FETs) are constructed by using Si NWs transferred onto flexible plastic substrates. Si NWs are obtained from the silicon wafers using photolithography and anisotropic etching process, and transferred onto flexible plastic substrates. To evaluate the electrical performance of the silicon nanowires, we examined the output and transfer characteristics of a top-gate field-effect transistor with a channel composed of a silicon nanowire selected from the nanowires on the plastic substrate. From these FETs, a field-effect mobility and transconductance are evaluated to be $47\;cm^2/Vs$ and 272 nS, respectively.

• 한국전기전자재료학회논문지
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• 제25권3호
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• pp.176-181
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• 2012

Due to the high etch rate and low fabrication cost, the wet etching of silicon using KOH etchant is widely used in MEMS fabrication area. However, anisotropic etch characteristic obstruct intuitional mask design and compensation structures are required for mask design level. Therefore, the accurate modeling for various types of silicon surface is essential for fabrication of three-dimensional MEMS structure. In this paper, we modeled KOH etch profile for MEMS based energy harvester using fuzzy logic. Modeling results are compared with experimental results and it is applied to design of compensation structure for MEMS based energy harvester. Through Fuzzy inference approaches, developed model showed good agreement with the experimental results with limited etch rate information.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.649-652
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• 1992

ECR(Electron Cyclotron Resonance) occure at ${\omega}_c$=${\omega}$, ${\omega}_c$:electron cycltron frequency, ${\omega}$:electromagnetic wave frequency. ECR system have several merit, 1) power transefer efficiency 2) low neutral gas pressure (below 1 mTorr) 3) high plasma density($10^{12}$ $cm^{-3}$). It is applicated variously in the field of semiconductor and new materials as the manufacturing equipment. Magnetic field in ECR system contruct resonance layer (${\omega}$=2.45GHz, $B_z$=875 Gauss) and control plasma. Plasma is almost generated at resonance layer. If the distance between substrate and resonance layer is short, uniformity of plasma is related with profile of resonance layer. Plasma have the property "Cold in Field", so directonality of magnetic field is one of the control factors of anisotropic etching. In this study, we calculate B field and flux line distribution, optimize geometry and submagnet current and improve of magnetic field directionality (99.9%) near substrate. For the purpose of calculation, vector potential A(r,z) and magnetic field B(r,z), green function and numerical integration is used. Object function for submagnet optimization is magnetic field directionality on the substrate and Powell method is used as optimization skim.

• 한국추진공학회지
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• 제10권4호
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• pp.77-84
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• 2006

마이크로/나노 위성체 개발과 함께 위성체의 자세 제어 및 궤도 수정을 위한 마이크로 추력기의 개발이 필요하게 되었다. 다양한 마이크로 추력기들 중 가장 각광 받고 있는 마이크로 고체 추진제 추력기를 소개하고, 추력기의 구성 요소들에 관한 연구 결과를 기술하였다. 추진제 점화를 위한 마이크로 백금 점화기를 제작하여 형상 변수에 관한 성능 평가를 수행하였다. HTPB/AP 고체 추진제의 특성 연구를 수행하여, 추진제의 연소 속도를 측정하였다. 마이크로 챔버는 감광성 유리를 이방성 식각하여 제작하였으며, 최종적으로 이들 요소들을 통합하여 마이크로 고체 추진제 추력기의 연소 실험을 수행하였다.

• 한국추진공학회지
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• 제19권1호
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• pp.1-8
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• 2015

MEMS 추력기를 위한 유리 박막 마이크로 점화기를 개발하였다. 수십 마이크로 미터의 두께를 가지는 유리 박막을 사용하여 점화기의 구조적 안정성을 향상시켰다. 마이크로 점화기는 박막 형성을 위한 감광 유리의 이방성 식각과 점화 코일 형성을 위한 Pt/Ti 증착 공정으로 제작되었다. 개발된 점화기는 유리 박막의 구조적 안정성으로 인하여 특별한 장치없이 추진제 충전이 가능하였다. 점화 실험이 성공적으로 이뤄졌으며 최소 점화 지연은 27.5 ms, 최소 점화 에너지는 19.3 mJ 이였다.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2009년도 제33회 추계학술대회논문집
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• pp.289-292
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• 2009

본 연구에서는 감광유리를 이용한 PEM 마이크로 연료전지 바이폴라 플레이트의 제작 공정을 확립하고 성능 측정을 수행하였다. 감광유리는 무게가 가볍고 내화학성이 뛰어나며 제작이 용이하다. 비등방성 식각, 열 및 UV 접합, 그리고 금속 층 적층을 통한 MEMS 제작 공정이 확립되었다. 성능 측정 결과 활성화 영역에 은이 적층된 마이크로 연료전지의 성능이 그렇지 않은 것보다 우수하였으며 두 경우에서 측정된 마이크로 연료전지의 성능은 모두 국내외 마이크로 연료전지 연구 수준과 동등한 수준이었다.

• 한국전기전자재료학회논문지
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• 제15권11호
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• pp.958-962
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• 2002

This paper reports on the fabrication of free-standing microstructures by DRIE (deep reactive ion etching). SOI (Si-on-insulator) structures with buried cavities are fabricated by SDB (Si-wafer direct bonding) technology and electrochemical etch-stop. The cavity was formed the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the formed cavity under vacuum condition at -760 mmHg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annealing (100$0^{\circ}C$, 60 min.), the SDB SOI structure with a accurate thickness and a good roughness was thinned by electrochemical etch-stop in TMAH solution. Finally, it was fabricated free-standing microstructures by DRIE. This result indicates that the fabrication technology of free-standing microstructures by combination SDB, electrochemical etch-stop and DRIE provides a powerful and versatile alternative process for high-performance bulk micromachining in MEMS fields.

• 마이크로전자및패키징학회지
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• 제16권4호
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• pp.5-8
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• 2009

In this paper, a high-quality low-temperature co-fired ceramic (LTCC) solenoid inductor using a solder ball and an air cavity on a silicon wafer for three-dimensional (3-D) system-in-package (SiP) is proposed. The LTCC multi-layer solenoid inductor is attached using Ag paste and solder ball on a silicon wafer with the air cavity structure. The air cavity is formed on a silicon wafer through an anisotropic wet-etching technology and is able to isolate the LTCC dielectric loss which is equivalent to a low k material effect. The electrical coupling between the metal layer and the LTCC dielectric layer is decreased by adopting the air cavity. The LTCC solenoid inductor using the solder ball and the air cavity on silicon wafer has an improved Q factor and self-resonant frequency (SRF) by reducing the LTCC dielectric resistance and parasitic capacitance. Also, 3-D device stacking technologies provide an effective path to the miniaturization of electronic systems.