• Journal of Pharmaceutical Investigation
• /
• v.21 no.3
• /
• pp.155-160
• /
• 1991

Particulate is the foreign insoluble material in injectable solution inadvertently present in a given product. Considerable efforts have been made to avoid or minimize particulate contamination by pharmaceutical manufacturers during the production of parenteral products. Particulate contamination of the parenteral products can occur mainly during the opening (cutting) the container immediately before clinical use. In this study, particulate contamination generated during the opening process of ampoules (conventional type, 1-point and color-break ampoules) was compared with that of a prefilled injectable container (prefilled syringe). The particles were examined under a microscope after filtration of the total fluids in the containers. Particles having wide range of size distribution were found from all the ampoules tested. The contamination from the I-point ampoule and colorbreak ampoule was much less than from the conventional ampoule. Glass particles generated by cutting the glass-made ampoules seemed a principal source of the particulate contamination. The glass-partiaulte contamination could be improved substantially by replacing the ampoule containers with the prefilled syringe. Prefilled syringe, which can be used without any cutting process. did not generate particulates during the use. Therefore, it was concluded that prefilled syringe is most preferable container for the small volume parenteral (SVP) fluids in terms of particulate contamination.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.145-146
• /
• 2006

The most Important research topic in the development of ZnO LED and LD is the production of p-type ZnO thin film that has minimal stress with outstanding stoichiometric ratio. In this study, Phosphorus diffused into the undoped ZnO thin films using the ampoule-tube method for the production of p-type znO thin films. The undoped ZnO thin films were deposited by RF magnetron sputtering system on $GaAs_{0.6}P_{0.4}$/GaP and Si wafers. 4N Phosphorus (P) was diffused into the undoped ZnO thin films in ampoule-tube which was performed and $630^{\circ}C$ during 3hr. We found the diffusion condition of the conductive ZnO films which had p-type properties with the highest mobility of above 532 $cm^2$/Vs compared with other studies PL spectra measured at 10K for the purpose of analyzing optical properties of p-type ZnO thin film showed strong PL intensity in the UV emission band around 365nm ~ 415nm and 365nm ~ 385nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.97-98
• /
• 2005

To investigate the ZnO thin films which is interested in the next generation of short wavelength LEDs and Lasers, our ZnO thin films were deposited by RF sputtering system. Phosphorus (P) and arsenic (As) were diffused into about 2.1${\mu}m$ ZnO thin films sputtered by RF magnetron sputtering system mn ampoule tube which was below $5\times10^{-7}$ Torr. The dopant sources of phosphorus and arsenic were $Zn_3P_2$ and $ZnAs_2$. Those diffusion was perform at 500, 600, and 700$^{\circ}C$ during 3hr. We find the condition of p-type ZnO whose diffusion condition is 700$^{\circ}C$, 3hr Our p-type ZnO thin film has not only very high carrier concentration of above $10^{19}/cm^3$ but also low resistivity of $5\times10^{-3}{\Omega}cm$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.08a
• /
• pp.59-62
• /
• 2003

Our Zn diffusion into n-type $GaAs_{0.60}P_{0.40}$ used ampoule-tube method to increase IV. N-type epitaxial wafers were preferred by $H_2SO_4$-based pre-treatment. $SiO_2$ thin film was deposited by PECVD for some wafers. Diffusion times and diffusion temperatures respectability are 1, 2, 3 hr and 775, $805^{\circ}C$. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about 625~650 nm and red color. The highest IV is about 270 mcd at the diffusion condition of $775^{\circ}C$, 3h for the wafers which didn't deposit $SiO_2$ thin films. Also, the longer diffusion time is the higher IV for the wafers which deposit $SiO_2$ thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.55-56
• /
• 2007

The p-type ZnO thin film, fabricated by means of the ampoule-tube method, was used to make the ZnO p-n junction, and its characteristics was analyzed. The ampoule-tube method was used to make the p-type ZnO based on the As diffusion, and the hall measurement was used to confirm that the p-type is formed. the current-voltage characteristics of the ZnO p-n junction were measured to confirm the rectification characteristics of a typical p-n junction and the low leakage voltage characteristics. Using the ampoule-tube to fabricate the p-type ZnO will provide a very useful technology for producing the UV ZnO LED and ZnO-based devices.

• International Journal of Advanced Culture Technology
• /
• v.10 no.4
• /
• pp.23-244
• /
• 2022

The Pulpose of this systematic review is aimed to establish the procedure of the injection with saftey and efficiency in the pre-hospital cardiac arrest patient performing the cardiopulmonary resuscitation (CPR), compared with traditional medication administration using Ampoule and medication administration with Prefilled Syringe. Databases were searched for CPR, heart arrest, resuscitation, Pre-filled Syringe, and Ampoule by the electronic data research including Pubmed, EMBASE and Cochran Library of Konyang University Library: 4 articles were selected by three co-authors using EndNote X20 and Covidence (Covidence.org) and were systematically reviewed. The Result of this study, the medication administration using Pre-fillled Syringe improves the safety of patients and Emergency medical workers by reducing the error in administration dose and administering the drug in safe than the medication adminisrtaion using Ampoule, also, contributes to the increment of survival rate of cardiac arrest and severe patients by decreasing the administration time that prevents the delay of medication administration.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.9 no.6
• /
• pp.542-546
• /
• 1999

InP single crystal, III-V binary compound semiconductor, was grown by VGF(vertical gradient freeze) method using quartz ampoule and its electrical optical properties were investigated. Phosphorous powders were put in the bottom of quartz ampoule and Indium metal charged in conical quartz crucible what was attached at the upper side position inside the quartz ampoule. It was vacuous under the pressure of $10^5$Torr and sealed up. Indium metal was melted at $1070^{\circ}C$ and InP composition was formed by diffusion of phosphorous sublimated at $450^{\circ}C$ into Indium melt. By cooling the InP composition melt ($2^{\circ}C$~$5^{\circ}C$/hr of cooling rate) in range of $1070^{\circ}C$~$900^{\circ}C$, InP crystal was grown. The grown InP single crystals were investigated by X-ray analysis and polarized optical microscopy. Electrical properties were measured by Van der Pauw method. At the cooling method. At the cooling rate of $2^{\circ}C$/hr, growth direction of ingot was [111] and the quality of ingot was better at the upper side of ingot than the lower side. It was found that the InP crystals were n-type semiconductor and the carrier concentration, electron mobility and relative resistivity were $10^{15}$~$10^{16}/\textrm{cm}^3$ , $2\times 10^3$~$3\times 10^4{\textrm}{cm}^2$/Vsec and$2\times 10^{-1}$~$2\times 10^{-3}$/ Wcm in the range of 150K~300K, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.11
• /
• pp.1043-1047
• /
• 2005

To investigate the electrical properties of the ZnO films which are interested in the next generation of short wavelength LEDs and Lasers, our ZnO thin films were deposited by RF sputtering system. At sputtering process of ZnO thin films, substrate temperature, work pressure respectively is $300^{\circ}C$ and 5.2 mTorr, and the purity of target is ZnO 5N. The thickness of ZnO thin films was about $2.1\;{\mu}m$ at SEM analysis after sputtering process. Phosphorus (P) and arsenic (As) were diffused into the undoped ZnO thin films sputtered by RF magnetron sputtering system in ampoule tube which was below $5\times10^{-7}$ Torr. The dopant sources of phosphorus and arsenic were $Zn_3P_2$ and $ZnAs_2$. Those diffusion was perform at 500, 600, and $700^{\circ}C$ during 3 hr. We found the diffusion condition of the conductive ZnO films which had n- and p-type properties. Our ZnO thin film has not only very high carrier concentration of above $10^{17}/cm^3$ but also low resistivity of below $2.0\times10^{-2}\;{\Omega}cm$.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1999.06a
• /
• pp.419-431
• /
• 1999

InP, III-V binary compound semiconductor, single crystal was grown by VGF (vertical gradient freeze) method using quartz ampoule and its electrical optical properties were investigated. Phosphorous powders were put in the bottom of quartz ampoule and Indium metal changed in conical quartz crucible hat was attached at the upper side position inside the quartz ampoule. It was vacuous under the pressure of 10-5 Torr and sealed up. In metal in the quartz crucible was melted at 1070$^{\circ}C$ and phophorous sublimated at 450$^{\circ}C$, there after it was diffused in In melt and so InP composition was formed. By cooling the InP composition melt (2$^{\circ}C$∼5$^{\circ}C$/hr of cooling rate) in range of 1070$^{\circ}C$∼900$^{\circ}C$, InP crystal was grown. the grown InP single crystals were investigated by X-ray analysis and polarized optical microscopy. Electrical properties of them were measured by Van der Pauw method. At the cooling rate of 2$^{\circ}C$/hr, its direction was (111), quality of the ingot ws better upper side of the ingot than lower. It was found that the InP crystals were n-type semiconductor and the carrier concentration, electron mobility and relative resistivity were 1015∼1016/㎤, 2x103∼3x104$\textrm{cm}^2$/Vsec and 2x10-1∼2x10-3Ωcm in the range of 150K∼300K, respectively.

• Proceedings of the Korea Institute of Fire Science and Engineering Conference
• /
• 2008.04a
• /
• pp.144-147
• /
• 2008

A glass bulb is the most reliable and simplest device for a fire sprinkler head system. We had developed an accurate glass bulb. The glass bulb is composed with a glass ampoule, liquid filled within the ampoule and an air bubble in the liquid. The first step of the development was to establish a stable mass production system for uniform glass ampoule. The second step is to optimize the composition of the liquid and the size of the bubble. It was also a difficult problem to devise manufacturing process to form uniform bubble size. The final step for the development is to control the mechanics for glass breaking by surface treatment for the glass bulb.