• 한국초전도ㆍ저온공학회논문지
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• 제20권4호
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• pp.6-10
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• 2018

Low-noise amplifiers in the radio-frequency (RF) band based on the direct current (DC) superconducting quantum interference device (SQUID) can be used for quantum-limited measurements in precision physics experiments. For the prediction of peak-gain frequency of these amplifiers, we need a reliable design formula for the resonance frequency of the microstrip circuit. We improved the formula for the resonance frequency, determined by parameters of the DC SQUID and the input coil, and compared the design values with experimental values. The proposed formula showed much accurate results than the conventional formula. Minor deviation of the experimental results from the theory can be corrected by using the measured geometrical parameters of the input coil line.

• Current Optics and Photonics
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• 제4권6호
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• pp.472-476
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• 2020

We have investigated the impact of optical filter bandwidth on the performance of all-optical automatic gain-controlled (AGC) erbium-doped fiber amplifiers (EDFAs). In principle, an optical bandpass filter (OBPF) should be placed within the feedback gain-clamping loop to set the lasing wavelength as well as the passband of the feedback amplified spontaneous emission (ASE) in all-optical AGC EDFA. From our measurement results, we found that the power level of feedback ASE with 0.1 nm passband of the optical filter was smaller than the ones with >0.2 nm passband cases. Therefore, the peak-to-peak power variation of the surviving channel with 0.1 nm passband was much larger than the ones with >0.2 nm passband. In addition, no significant difference in the power level of the feedback ASE was observed when the passband of the optical filter was ranging from 0.2 nm to 4.5 nm in our measurements. From these results, we have concluded that the passband of the optical filter should be slightly larger than 0.2 nm by taking into account the effect of feedback ASE power and the efficient use of the EDFA gain spectrum for the lasing ASE peak.

• 한국산학기술학회논문지
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• 제10권5호
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• pp.947-954
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• 2009

본 논문에서는 하이브리드 커플러를 이용하여 구성하는 종래의 평형전력증폭기의 입력측 반사전력을 별도의 보조증폭기의 입력으로 활용하여 성능을 개선한 새로운 구조의 평형전력증폭기를 제안한다. 평형증폭기 내의 개별 단일 증폭기의 정합이 완벽하지 못하므로 여기에서 반사된 전력이 하이브리드 커플러의 격리단자에서 터미네이션 시키는 것이 종래의 구성이었다. 본 논문에서는 격리단자에 터미네이션 대신 보조증폭기를 연결하여 누설전력이 입력되고, 보조증폭기의 출력이 최종적인 평형증폭기의 출력에 더해지므로 출력전력과 효율이 개선된다. 제시한 구조를 검증하기 위하여 종래의 평형전력증폭기와 제안된 평형전력증폭기를 실제 제작하고 측정한 결과를 보인다. 제시한 평형전력증폭기는 종래의 평형전력증폭기보다 약 3dB의 출력전력특성, 5.2%의 전력부가효율, 그리고 $5{\sim}10\;dBc$의 IMB3 개선효과를 갖는다.

• 정보와 통신
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• 제10권8호
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• pp.3-8
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• 1993

• Journal of the Optical Society of Korea
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• 제7권3호
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• pp.135-138
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• 2003

A chirped-pulse amplification femtosecond Ti:sapphire laser operating at 1 KHz has been developed. The laser system consisted of a long-cavity femtosecond oscillator, a four-pass grating pulse stretcher, two multi-pass amplifiers and a double-pass grating pulse compressor. Thermal lensing at the amplifiers was reduced by cooling Ti:sapphire crystals using Peltier coolers. Gain narrowing and residual phase errors were compensated for by the use of an acousto-optic pulse shaper. The final laser output had an energy per pulse of 2.0 mJ and a pulse duration of 19.5 fs, reaching 0.1 TW at 1 KHz.

• ETRI Journal
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• 제25권3호
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• pp.195-202
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• 2003

This paper proposes a new LDMOSFET structure with a trenched sinker for high-power RF amplifiers. Using a low-temperature, deep-trench technology, we succeeded in drastically shrinking the sinker area to one-third the size of the conventional diffusion-type structure. The RF performance of the proposed device with a channel width of 5 mm showed a small signal gain of 16.5 dB and a maximum peak power of 32 dBm with a power-added efficiency of 25% at 2 GHz. Furthermore, the trench sinker, which was applied to the guard ring to suppress coupling between inductors, showed an excellent blocking performance below -40 dB at a frequency of up to 20 GHz. These results confirm that the proposed trenched sinker should be an effective technology both as a compact sinker for RF power devices and as a guard ring against coupling.

• 대한전자공학회논문지
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• 제5권1호
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• pp.13-25
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• 1968

고주파용 transistor를 이용한 광대역증폭기를 hybrid-π 등가회로를 이용하여 상세하게 분석하였다. 저주파와 고주파의 경우에 관한 해석을 하였고 이득과 대역폭및 입력 impedance와 출력 impedance를 주는 식을 유도하였다. 직렬궤환증폭기는 전압원으로 구동하여야하며 저저항부하로 동작시켜야 하고 병렬궤환증폭기는 전류원으로 구동하여야 하며 고저항부하로 동작시켜야 하는 것을 표시하였고 이 두가지 증폭단은 완충증폭단이나 변압기결합을 하지않고 결합시킬 수 있음을 표시하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 V
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• pp.2753-2756
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• 2003

A convenient, tunable loop-gain negative impedance circuit that increases input impedance of a front-end in a bioimpedance measurement has been proposed. Since the proposed circuit comprises wide-band operational amplifiers, selecting operational amplifiers is easy, while an operational amplifier of proper bandwidth should be chosen to use conventional circuit. Also, since loop-gain can be controlled by a feedback resistor connected serially with a feedback capacitor, loop-gain is tunable with a potentiometer. The input impedance of the proposed circuit is two times larger than that of the conventional circuit. Furthermore, closed loop phase response of the proposed circuit is better than that of the conventional circuit or without a negative capacitance circuit. The implemeted, proposed circuit showed stable operation and a zero input capacitance.

• 전기학회논문지
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• 제67권3호
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• pp.383-390
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• 2018

Piezoelectric micro-machined ultrasonic transducers for highly directional speaker need DC bias voltage. Most existing power amplifiers are not suitable for use in highly directional transducers because they are based on AC. In addition, since the piezoelectric micro-machined ultrasonic transducer has a large capacitive reactance, the power efficiency of the power amplifier is very low. Thus this paper proposes a new high efficiency power amplifier with DC bias voltage. In addition, by designing a matching circuit to compensate the capacitive reactance of the micro-machined ultrasonic transducer, the power efficiency of the power amplifier increases. The operating characteristics of the proposed power amplifier was verified by an experimental prototype. The proposed power amplifier is expected to be widely used in designing and implementing other related power amplifiers.

• 세라미스트
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• 제10권3호
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• pp.75-85
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• 2007

Over the past few years, due to the great development of optical communications, an increasing R&D activity has been focused on the design and manufacture of the integrated optic amplifiers, with particular reference to their application in wavelength-division-multiplexing (WDM) systems. In this technological context, rare-earth-doped oxide glasses, which had been widely used for solid state lasers, gained much attention as highly performing materials in the third telecom window, around 1.5 micron. The aim of the present paper is to provide a brief overview of the progress made, with particular reference to the authors' work in this area, and to shortly discuss its perspectives.