• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.1087-1088
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• 2008

In this paper, an error prediction system for the distribution feeders is designed and implemented. In order to monitor the signals of voltages, currents, temperatures, and sounds, and then analyze the signals, an ARM9-based processor board is used and numerous programmable gain amplifiers, temperature sensors, filters are implemented based on a low single voltage system.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2001년도 ICCAS
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• pp.25.4-25
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• 2001

In this paper, a five degree-of-freedom haptic device is proposed. The proposed haptic device has a pen which is suspended by tensioned six strings. Human operator handles the pen. Six DC motors are used as actuators to generate tensions in six strings to make resultant force feedback at the pen to the human operator Six encoders are used for calculating the movement of the pen. A digital controller is used for generate control signals for the suitable tension in the six strings. A current amplifiers is used for amplifying the control signals. Cable-suspended system has advantages of structure simplicity (only with several strings driven by motors without using other tensioning mechanisms), low inertia, and high force-to-weight ratio. Pen-based system has advantages of compactness and ...

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2001년도 ICCAS
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• pp.158.3-158
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• 2001

In this paper, an instrumentation amplifier, which the voltage gain can be electronically adjusted, is proposed. The realization method is based on the use of operational transconductance amplifiers (OTAs) as active circuit elements. The common mode rejection ratio (CMRR) of the proposed scheme is better than 93dB at the frequency of about 70kHz. The temperature effect to the circuit performance is also compensated. Experimental and simulation results demonstrating the characteristics of the proposed scheme are also included.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 ITC-CSCC -2
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• pp.747-750
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• 2002

A circuit building block for realizing a continuous-time active-only current-mode integrator is presented. The proposed integrator is composed only of internally compensated type operational amplifier (OA) and operational transconductance amplifiers (OTAs). The integrator is suitable for integrated circuit implementation in either bipolar or CMOS technologies, since it does not require any external passive elements. Moreover, the integrator gain can be tuned through the transconductance gains of the OTAs. Some application examples in the realization of current-mode network functions using the proposed current-mode integrator as an active element are also given.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.979-982
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• 2003

Due to the differential transmission technique and low voltage swing, LVDS has been widely used for high speed transmission with low power consumption. This paper presents the design and implementation of interface circuits for 1.5Gb/s operation in 0.35um CMOS technology. The interface circuit ate fully compatible with the low-voltage differential signaling(LVDS) standard. The LVDS proposed in this paper utilizes a sense amplifiers instead of the conventional differential pre-amplifier, which provides a 1.5Gb/s transmission speed with further reduced driver output voltage. Furthermore, the reduced driver output voltage results in reducing the power consumption.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.815-818
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• 2003

New sensing and writing schemes for a magneto-resistive random access memory (MRAM) with a twin cell structure are proposed. In order to enhance the cell reliability, a scheme of the low voltage precharge is employed to keep the magneto resistance (MR) ratio constant. Moreover, a common gate amplifier is utilized to provide sufficient voltage signal to the bit line sense amplifiers under the small MR ratio structures. To enhance the writing reliability, a current mode technique with tri-state current drivers is adopted. During write operations, the bit and /bit lines are connected. And 'HIGH' or 'LOW' data is determined in terms of the current direction flowing through the MTJ cell. With the viewpoint of the improved reliability of the cell behavior and sensing margin, HSPICE simulations proved the validity of the proposed schemes.

• 전자공학회논문지A
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• 제31A권5호
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• pp.50-57
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• 1994

The analysis of the two-tone intermodulation distortion of multistage two-ports with gain and mismatching losses is presented with simplified two-port analyses and statistical viewpoint. The uncertainty obtained from unknown phase angles of the intermodulation distortion signals to the system designer is reduced using stochastic process, hence improving the accuracy of the solution. Based on the dc power dependance of third-order intercept point of each stage, the new efficient method for improving the total intercept point is also suggested with only the relation of dc power and available power gain criteria. Experimental verification on specific amplifiers used for cellular mobile communication comparing predicted and measured intercept points for various power conditions is presented.

• 전자공학회논문지A
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• 제31A권5호
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• pp.68-75
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• 1994

A new Predistortor that is designed using Feedforward type is proposed to overcome the nonlinearity of HPA (High Power Amplifier). HPA has the nonlinearity of the gain compression and phase distorton, so digital communication system of multi-carrier TDMA needs the linear RF transmitter. Using IMD (Intermodulation Distortion) of drive amplifier, as Feedforward type, the inverse IMD is coupled to the main loop with variable attenuators, phase shifters, and sub-amplifiers well designed. At the input of main amplifier, the over-coupled IMD surpresses the main amplifier 's IMD. Adjusting the level and phase of IMD at the sub loop, C/I of HPA is better than before correction.

• 전자공학회논문지C
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• 제35C권12호
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• pp.40-48
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• 1998

본 논문에서는 rail-to-rail 복합입력단을 갖는 증폭회로의 옵셋전압을 보상해주기 위한 방법을 제안하고 집적회로로 구현하였다. 두 개의 보조증폭회로와 옵셋보상 커패시터들을 사용하여 NMOS 차동쌍과 PMOS 차동쌍의 옵셋을 각각 보상하고, ping-pong control을 사용하여 연속시간 동작이 가능한 3V rail-to-rail CMOS 증폭회로를 설계하였다. 설계된 증폭회로를 0.8㎛ single-poly double metal CMOS 공정으로 제작한 후 성능을 측정한 결과, 옵셋보상후의 옵셋전압은 옵셋보상전에 비해 약 20배정도 감소하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권3호
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• pp.136-145
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• 2006

Two major processing technologies of GaAs HBT and pHEMT have been released in production at Win Semiconductors corp. to address the strong demands of power amplifiers and switches for both handset and WLAN communications markets. Excellent performance with low processing cost and die shrinkage features is reported from the manufactured MMICs. With the stringent tighter manufacturing quality control WIN has successfully become one of the major pure open foundry house to serve the communication industries. The advancing of both technologies to include E/D-pHEMTs and BiHEMTs likes for multifunctional integration of PA, LNA, switch and logics is also highlighted.