• Title/Summary/Keyword: amplifiers

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Correction of resonance frequency for RF amplifiers based on superconducting quantum interference device

  • Lee, Y.H.;Yu, K.K.;Kim, J.M.;Lee, S.K.;Chong, Y.;Oh, S.J.;Semertzidis, Y.K.
    • Progress in Superconductivity and Cryogenics
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    • v.20 no.4
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    • pp.6-10
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    • 2018
  • Low-noise amplifiers in the radio-frequency (RF) band based on the direct current (DC) superconducting quantum interference device (SQUID) can be used for quantum-limited measurements in precision physics experiments. For the prediction of peak-gain frequency of these amplifiers, we need a reliable design formula for the resonance frequency of the microstrip circuit. We improved the formula for the resonance frequency, determined by parameters of the DC SQUID and the input coil, and compared the design values with experimental values. The proposed formula showed much accurate results than the conventional formula. Minor deviation of the experimental results from the theory can be corrected by using the measured geometrical parameters of the input coil line.

Impact of Optical Filter Bandwidth on Performance of All-optical Automatic Gain-controlled Erbium-doped Fiber Amplifiers

  • Jeong, Yoo Seok;Kim, Chul Han
    • Current Optics and Photonics
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    • v.4 no.6
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    • pp.472-476
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    • 2020
  • We have investigated the impact of optical filter bandwidth on the performance of all-optical automatic gain-controlled (AGC) erbium-doped fiber amplifiers (EDFAs). In principle, an optical bandpass filter (OBPF) should be placed within the feedback gain-clamping loop to set the lasing wavelength as well as the passband of the feedback amplified spontaneous emission (ASE) in all-optical AGC EDFA. From our measurement results, we found that the power level of feedback ASE with 0.1 nm passband of the optical filter was smaller than the ones with >0.2 nm passband cases. Therefore, the peak-to-peak power variation of the surviving channel with 0.1 nm passband was much larger than the ones with >0.2 nm passband. In addition, no significant difference in the power level of the feedback ASE was observed when the passband of the optical filter was ranging from 0.2 nm to 4.5 nm in our measurements. From these results, we have concluded that the passband of the optical filter should be slightly larger than 0.2 nm by taking into account the effect of feedback ASE power and the efficient use of the EDFA gain spectrum for the lasing ASE peak.

Design of a New Balanced Power Amplifier Utilizing the Reflected Input Power (입력단 반사전력을 이용하는 새로운 구조의 평형전력증폭기 설계)

  • Park, Chun-Seon;Lim, Jong-Sik;Cha, Hyeon-Won;Han, Sang-Min;Ahn, Dal
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.10 no.5
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    • pp.947-954
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    • 2009
  • This paper proposed a new balanced power amplifier using the reflected input of conventional balanced power amplifiers composed of branch line hybrid coupler. In general, the single-ended amplifier in balanced amplifiers does not have the perfect matching, so the reflected input power, in other words the leakage power, is terminated conventionally at the isolation port of hybrid coupler. However in this work, the leakage power is injected into the auxiliary amplifier, and its output power is combined to the output power of balanced amplifier. Therefore output power, efficiency, and 2-tone IMD3 performances of the proposed balanced amplifier are highly improved compared to the conventional balanced amplifier. For the verification of the proposed balanced amplifier, a conventional balanced amplifier and the proposed balanced amplifier are designed, fabricated and measured, and the measured results are compared. The proposed balanced amplifier shows the improvement in the output power(Pout), power added efficiency (PAE), and 2-tone IMD3 by 3dB, 5.2%, and $5{\sim}10dBc$, respectively, from the measurement.

High-power Femtosecond Ti:sapphire Laser at 1 KHz with a Long-cavity Femtosecond Oscillator

  • Sung, Jae-Hee;Hong, Kyung-Han;Nam, Chang-Hee
    • Journal of the Optical Society of Korea
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    • v.7 no.3
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    • pp.135-138
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    • 2003
  • A chirped-pulse amplification femtosecond Ti:sapphire laser operating at 1 KHz has been developed. The laser system consisted of a long-cavity femtosecond oscillator, a four-pass grating pulse stretcher, two multi-pass amplifiers and a double-pass grating pulse compressor. Thermal lensing at the amplifiers was reduced by cooling Ti:sapphire crystals using Peltier coolers. Gain narrowing and residual phase errors were compensated for by the use of an acousto-optic pulse shaper. The final laser output had an energy per pulse of 2.0 mJ and a pulse duration of 19.5 fs, reaching 0.1 TW at 1 KHz.

Trenched-Sinker LDMOSFET (TS-LDMOS) Structure for 2 GHz Power Amplifiers

  • Kim, Cheon-Soo;Kim, Sung-Do;Park, Mun-Yang;Yu, Hyun-Kyu
    • ETRI Journal
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    • v.25 no.3
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    • pp.195-202
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    • 2003
  • This paper proposes a new LDMOSFET structure with a trenched sinker for high-power RF amplifiers. Using a low-temperature, deep-trench technology, we succeeded in drastically shrinking the sinker area to one-third the size of the conventional diffusion-type structure. The RF performance of the proposed device with a channel width of 5 mm showed a small signal gain of 16.5 dB and a maximum peak power of 32 dBm with a power-added efficiency of 25% at 2 GHz. Furthermore, the trench sinker, which was applied to the guard ring to suppress coupling between inductors, showed an excellent blocking performance below -40 dB at a frequency of up to 20 GHz. These results confirm that the proposed trenched sinker should be an effective technology both as a compact sinker for RF power devices and as a guard ring against coupling.

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Transistor Wide-Band Feedback Amplifiers (트랜지스터 광대역궤환증폭기)

  • 이병선;이상배
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.5 no.1
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    • pp.13-25
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    • 1968
  • A detailed analysis of the transistor wide-band feedback amplifiers using the hybrid-$\pi$ equivalent circuit has been made. It is considered both for the low freqnency and for the high frequency. The expressions of the gain, bandwidth. input impedance and output impedance have been presented. It is shown that a series feedback amplifier should be driven from the voltage source and should drive into the low resistance load, and a shunt feedback amplifier should be driven from the current source and should drive into the high resistance load. It is also shown that these stages can be coupled without use of the buffer stage or coupling transformer.

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New negative capacitance front-end for bioimpedance measurements (생체 임피던스 측정을 위한 새로운 네가티브 커패시턴스 프론트 엔드)

  • 권석영;김영필;황인덕
    • Proceedings of the IEEK Conference
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    • 2003.07c
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    • pp.2753-2756
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    • 2003
  • A convenient, tunable loop-gain negative impedance circuit that increases input impedance of a front-end in a bioimpedance measurement has been proposed. Since the proposed circuit comprises wide-band operational amplifiers, selecting operational amplifiers is easy, while an operational amplifier of proper bandwidth should be chosen to use conventional circuit. Also, since loop-gain can be controlled by a feedback resistor connected serially with a feedback capacitor, loop-gain is tunable with a potentiometer. The input impedance of the proposed circuit is two times larger than that of the conventional circuit. Furthermore, closed loop phase response of the proposed circuit is better than that of the conventional circuit or without a negative capacitance circuit. The implemeted, proposed circuit showed stable operation and a zero input capacitance.

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New High-efficiency Power Amplifier System for High-directional Piezoelectric Transducer (고지향성 압전 트랜스듀서용 새로운 고효율 전력 증폭기)

  • Kim, Jin-Young;Kim, In-Dong;Moon, Wonkyu
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.67 no.3
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    • pp.383-390
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    • 2018
  • Piezoelectric micro-machined ultrasonic transducers for highly directional speaker need DC bias voltage. Most existing power amplifiers are not suitable for use in highly directional transducers because they are based on AC. In addition, since the piezoelectric micro-machined ultrasonic transducer has a large capacitive reactance, the power efficiency of the power amplifier is very low. Thus this paper proposes a new high efficiency power amplifier with DC bias voltage. In addition, by designing a matching circuit to compensate the capacitive reactance of the micro-machined ultrasonic transducer, the power efficiency of the power amplifier increases. The operating characteristics of the proposed power amplifier was verified by an experimental prototype. The proposed power amplifier is expected to be widely used in designing and implementing other related power amplifiers.

Planar Waveguide Amplifiers

  • Berneschi, S.;Conti, G. Nunzi;Righini, G.C.
    • Ceramist
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    • v.10 no.3
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    • pp.75-85
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    • 2007
  • Over the past few years, due to the great development of optical communications, an increasing R&D activity has been focused on the design and manufacture of the integrated optic amplifiers, with particular reference to their application in wavelength-division-multiplexing (WDM) systems. In this technological context, rare-earth-doped oxide glasses, which had been widely used for solid state lasers, gained much attention as highly performing materials in the third telecom window, around 1.5 micron. The aim of the present paper is to provide a brief overview of the progress made, with particular reference to the authors' work in this area, and to shortly discuss its perspectives.

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