• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.70-73
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• 1999

Amorphous silica was hydrothermally reacted for 48~120h at $170~180^{\circ}C$ in molar ratios of $SiO_{2}/(NaOH+Na_{2}CO_{3})=2~20\;and\;H_{2}O/(NaOH+Na_{2}CO_{3})=200~250$. Na-kenyaite nuclei were formed directly from amorphous silica without formation of Na-magadiite nuclei in wide range with $SiO_{2}/(NaOH+Na_{2}CO_{3})=3~20$. Above $SiO_{2}/(NaOH+Na_{2}CO_{3})=10$, Na-kenyaite always produced with a residual amorphous silica. Well-crystallized Na-kenyaite without residual amorphous silica were obtained in the range of $SiO_{2}/(NaOH+Na_{2}CO_{3})=3~10$. Morphology of Na-kenyaite exhibited that a large spherical and loosely packed aggregates changed into the smaller and individual platelets according to increase of reaction time.

• Journal of the Korean Magnetics Society
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• v.16 no.3
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• pp.186-191
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• 2006

Ferromagnetic amorphous $Ni_{16}Fe_{62}Si_8B_{14}$ and $Co_{70.5}Fe_{4.5}Si_{15}B_{10}$ layers have been devised and incorporated as free layers of magnetic tunnel junctions (MTJs) to improve MRAM reading and writing performance. The NiFeSiB and CoFeSiB single-layer film exhibited a lower saturation magnetization ($Ms=800emu/cm^3,\;and\;560emu/cm^3$, respectively) compared to that of a $Co_{90}Fe_{10}(Ms=1400emu/cm^3)$. Because amorphous ferromagnetic materials have lower Ms than crystalline ones, the MTJs incorporating amorphous ferromagnetic materials offer lower switching field ($H_{sw}$) values than that of the traditional CoFe-based MTJ. The double-barrier MTJ with an amorphous NiFeSiB free layer offered smooth surface resulting in low bias voltage dependence, and high $V_h\;and\;V_{bd}$ compared with the values of the traditional CoFe-based MTJ.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.403-404
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• 2012

We fabricated TFT devices with the GeSe channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is high. Based on the experiments, we draw the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.280-281
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• 2011

We fabricated the devices of TFT type with the amorphous chalcogenide channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is about 4 order. Based on the experiments, we contained the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.11
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• pp.2095-2099
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• 2007

In this paper, the optimum amorphous silicon nitride thin film is deposited using plasma enhanced chemical vapor deposition(PECVD). Amorphous silicon nitride is deposited using $SiH_4$ and $NH_3$ gas. At this time, electrical and optical characteristics of amorphous silicon nitride and deposition rate are changed under deposition condition such as $SiH_4$, $NH_3$ and $N_2$ gas flow rate, chamber pressure, rf power and substrate temperature. From the experimental results, we can estimate that the deposition condition makes a good electrical characteristic of amorphous silicon nitride thin film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.163-168
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• 2001

This dissertation describes the development of a sensor for measuring microscopic displacement where we use CoFeSiB amorphous alloy magnetic ribbon having near zero magnetostrictive properties. For the development of the sensor, we first fabricate amorphous alloy magnetic ribbon, and then investigate its physical and magnetic properties. Finally, its possibility of practical application as a displacement sensor is discussed. The experimental samples were made of near zero magnetostrictive (Co$\_$0.94/Fe$\_$0.06/)$\_$9/Si$_2$B$\_$19/ alloy which were fabricated by a rapid liquid quenching method. As a results, we got amorphous alloy magnetic ribbons of 12㎛ in thickness, 10 mm in length, and 2.5 m in width. It was found that the crystallization temperature and the Curie temperature are around 451$\^{C}$ and around 441$\^{C}$ respectively. We couldn't observe any noticeable change of the impedance frequency of 10MHz, but observed the impedance change of 3.76 %/Oe at 100 MHz. The inductance was nearly stable over the frequency range of 1∼10 MHz, In addition, it was observed that the variation of the inductance and the impedance were linear within the displacement ranges of 20∼60㎛. As the results of the experiments, it is suggested that the displacement sensor which is fabricated by using amorphous alloy magnetic ribbon of (Co$\_$0.04/Fe$\_$0.06/)$\_$79/Si$_2$B$\_$19/ compound, can be used as a sensor to detect microscopic displacement.

• Journal of Magnetics
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• v.18 no.4
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• pp.395-399
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• 2013

The metallic glass ribbons of $[(Fe_xCo_{1-x})_{0.75}B_{0.2}Si_{0.05}]_{96}Mo_4$ (x = 0, 0.3, 0.6, 0.9 at.%) and $[(Fe_xCo_{1-x})_{0.75}B_{0.2}Si_{0.05}]_{96}Nb_4$ (x = 0, 0.3, 0.6, 0.9 at.%) were obtained by melt spinning with 25-30 ${\mu}m$ thickness. The thermal stability, mechanical properties and magnetic properties of Fe-Co-B-Si based systems were investigated. The values of thermal stability were measured using differential scanning calorimetry (DSC), including glass transition temperature ($T_g$), crystallization temperature ($T_x$) and supercooled liquid region (${\Delta}T_x=T_x-T_g$). These amorphous ribbons were identified as fully amorphous, using X-ray diffraction (XRD). The mechanical properties of Febased samples were measured by nano-indentation. Magnetic properties of the amorphous ribbons were measured by a vibrating sample magnetometer (VSM). The amorphous ribbons of $[(Fe_xCo_{1-x})_{0.75}B_{0.2}Si_{0.05}]_{96}Mo_4$ (x = 0, 0.3, 0.6, 0.9 at.%) and $[(Fe_xCo_{1-x})_{0.75}B_{0.2}Si_{0.05}]_{96}Nb_4$ (x = 0, 0.3, 0.6, 0.9 at.%) exhibited soft magnetic properties with low coercive force ($H_c$) and high saturation magnetization (Ms).

• Korean Journal of Optics and Photonics
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• v.8 no.6
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• pp.500-505
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• 1997

Experimental amorphous photodiode is fabricated on CMOS IC using a-Si:H p-i-n structure. Amorphous photodiode is scuccessfully integrated on CMOS IC using amorphous Si produced by PECVD system. The PECVD system can deposit a-Si:H at low temperature so that photodiode can be integrated with CMOS IC structure without any process incompatibility. The fabricated amorphous photodiode has a breakdown voltage of below -20 V, a leakage current of about 1 $\mu\textrm{A}$, and turn-on voltage of 0.6~0.8 V. It is demonstrated that the photocurrent of optical signal can be turned on and off by a small voltage and the fabricated amorphous p-i-n photodiode can be used as an optical switch.

• Korean Journal of Materials Research
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• v.13 no.11
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• pp.721-724
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• 2003

A Fe-Si-B-Ni amorphous alloy manufactured by one roll melt-spinning method showed the crystallization temperature difference of a maximum $10^{\circ}C$ according to each lot. This temperature difference had a considerable influence on the annealing process to be conducted for obtaining the proper inductance of the alloy. The proper annealing temperature of the alloy was $480^{\circ}C$ and the annealing time increased as the crystallization temperature increased. The activation energy measured by Kissinger method increased as the crystallization temperature increased. Therefore, the annealing process must be adjusted by the crystallization temperature difference of the amorphous alloy.

• Journal of the Korean institute of surface engineering
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• v.47 no.1
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• pp.20-24
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• 2014

Joule heat is generated by applying an electric filed to a conductive layer located beneath or above the amorphous silicon film, and is used to raise the temperature of the silicon film to crystallization temperature. An electric field was applied to an indium tin oxide (ITO) conductive layer to induce Joule heating in order to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced within the range of a millisecond. To investigate the kinetics of Joule-heating induced crystallization (JIC) solid phase crystallization was conducted using amorphous silicon films deposited by plasma enhanced chemical vapor deposition and using tube furnace in nitrogen ambient. Microscopic and macroscopic uniformity of crystallinity of JIC poly-Si was measured to have better uniformity compared to that of poly-Si produced by other methods such as metal induced crystallization and Excimer laser crystallization.