• Proceedings of the KOSOMBE Conference
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• v.1998 no.11
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• pp.295-296
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• 1998

With xeroradiography appearance, DR (Digital Radiography) system have been studying for X-ray detection using photoreceptor. Also detection method for receptor charge change have been developing variably. We use photoreceptor material of a-Se(Amorphous Selenium) with high DQE, high SNR(Signal to Noise Ratio) and high transformation efficiency of X-ray signals into electrical signals. After a-Se receptor is uniformly charged by using Arc discharge, X-ray is exposed. Then a-Se receptor produce subtle charge variation and MOSFET detect charge variations. The detected signal pass A/D converter and signal processing by PC. As results, the initial voltage is 8V. It has wide dynamic range needed digital radiography system. In this study, we obtained data with changing kVp(tube potential voltage) and fixed 8mAs(tube current by exposure time) in X-ray system. However MOSFET detector for X-ray signal is not tested X-ray mAs variations. But if MOSFET detector is tested X-ray mAs variation and exactly calibrated multichannel is made and noise-reduction is done, suitable DR system readout method will be done.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.416-419
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• 2002

There are being two prominent studying for Digital Radiography. Direct and Indirect method of Digital Radiography are announced for producing high quality digital image. The one is using amorphous selenium as photoconductor and the other is using phosphor layer as a light conversion. But each two systems have strength and weakness such as high voltage and blurring effect. In this study, we investigated the electrical characteristic of $multi-layer\left(CaWO_{4}+a-Se \right)$ as a photoconductor according to the changing arsenic composition ratio. This is a basic research for developing of Hybrid digital radiography which is a new type X-ray detector. The arsenic composition ratio of a-Se compound is classified into 7 different kinds which have 0.1%, 0.3%, 0.5%, 1%, 1.5%, 5%, 10% and were made test sample throught thermo-evaporation. The phosphor layer of $CaWO_4$ was overlapped on a-Se using EFIRON optical adhesives. We measured the dark and photo current about the test sample and compared the electrical characteristic of the net charge and signal-to-noise ratio. Among other things, test sample of compound material of 0.3% arsenic showed good characteristic of $2.45nA/cm^2$ dark current and $357.19pC/cm^2/mR$ net charge at $3V/{\mu}m$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.436-439
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• 2002

Recently, It has performed that the basic research of the photoconductive material and the development and application of the digital radiograph detector which is divided into the direct and indirect method. The objective of this study investigate the effect of the electric characteristic about changing the composition of Arsenic in hybrid detector system for compensating a defect of conventional. We fabricated samples using the amorphous Selenium and Arsenic alloy with various concentrations of the Arsenic{seven step 0.1%, 0.3%, 0.5%, 1%, 1.5%, 3%, 5%). And using EFIRON optical adhesives the formed multi-layer$(Gd_{2}O_{2}S(Eu^{2+}))$ composed phosphor layer. X-ray and light sensitivity was measured to study x-ray response characteritics. As results, highest value was measured as output net charge and SNR were $315.7pC/cm^2/mR$ and 99.4 at 0.3%As doping ratio.

• Korean Journal of Optics and Photonics
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• v.19 no.4
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• pp.249-254
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• 2008

We developed a new x-ray image sensor utilizing a reflection-mode liquid crystal panel as its sensitive element, and tested its functionality by using it to obtain an x-ray image of a printed circuit board. In the liquid crystal x-ray image sensors hitherto reported, the liquid crystal layer is in direct contact with the photoconductive film which is deposited on a glass substrate. In the fabrication of the new x-ray image sensor, a liquid crystal panel is fabricated in the first step by using a pair of glass plates of a few centimeters thicknrss. Then one of the glass substrates is ground until its thickness is reduced to about $60\;{\mu}m$. After polishing the glass plate, dielectric films for high reflectance at 630 nm, a film of amorphous selenium for photoconduction, and a transparent conductive film for electrode are deposited in sequence. The new x-ray image sensor has several merits: primarily, fabrication of a large area sensor is more easily compared with the old fashioned x-ray image sensors. Since the reflection type liquid crystal panel has a very steep response curve, the new x-ray sensor has much more sensitivity to x-rays compared with the conventional x-ray area sensor, and the radiation dosage can be reduced down to less then 20%. By combining the new x-ray sensor with CCD camera technology, real-time x-ray images can be easily captured. We report the structure, fabrication process and characteristics of the new x-ray image sensor.

• Journal of radiological science and technology
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• v.26 no.4
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• pp.39-46
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• 2003

Digital radiographic systems based on solid-state detectors, commonly referred to as flat-panel detectors, are gaining popularity in clinical practice. Large area, flat panel solid state detectors are being investigated for digital radiography. The purpose of this work was to evaluate the active matrix flat panel digital x-ray detectors in terms of their modulation transfer function (MTF), noise power spectrum (NPS), and detective quantum efficiency (DQE). In this paper, development and evaluation of a selenium-based flat-panel digital x-ray detector are described. The prototype detector has a pixel pitch of $139\;{\mu}m$ and a total active imaging area of $14{\times}8.5\;inch^2$, giving a total 3.9 million pixels. This detector include a x-ray imaging layer of amorphous selenium as a photoconductor which is evaporated in vacuum state on a TFT flat panel, to make signals in proportion to incident x-ray. The film thickness was about $500\;{\mu}m$. To evaluate the imaging performance of the digital radiography(DR) system developed in our group, sensitivity, linearity, the modulation transfer function(MTF), noise power spectrum (NPS) and detective quantum efficiency(DQE) of detector was measured. The measured sensitivity was $4.16{\times}10^6\;ehp/pixel{\cdot}mR$ at the bias field of $10\;V/{\mu}m$ : The beam condition was 41.9\;KeV. Measured MTF at 2.5\;lp/mm was 52%, and the DQE at 1.5\;lp/mm was 75%. And the excellent linearity was showed where the coefficient of determination ($r^2$) is 0.9693.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.40 no.3
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• pp.163-171
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• 2003

To evaluate the performance of the digital radiography(DR) system developed in our group, the modulation transfer function(MTF) was measured and compared with that of an analog X- ray detector, film/screen system. The DR system has an amorphous selenium(a-Se) layer vacuum-evaporated on a TFT flat panel detector. The speed class 400 film/screen (Fuji) system has been being used in the clinical field as analog X-ray detectors. Both the square wave and slit method were used to evaluate their MTF. The square method was applied to both film/screen and the DR system. The slit method, however, was applied to only DR system. The full-width half maximum resolution of film/screen was 357${\mu}{\textrm}{m}$(1.4 lp/mm at 50% spatial frequency), and the resolution of DR was limited to 200${\mu}{\textrm}{m}$(2.5 lp/mm at 30%). These results indicate the measured resolution limitations approximate to the pixel pitch, 139 ${\mu}{\textrm}{m}$ of TFT. The MTF of DR is higher than that of film/screen by the factor of 1.785. It is proved that our a-Se based DR system has potential usefulness in the clinical field.

• Journal of the Korean Society of Radiology
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• v.4 no.4
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• pp.37-40
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• 2010

In this paper, transport properties of charge carrier which is produced by x-ray exposure were investigated.. It is the research of charge transport and specific property of trap that is performed in direct digital x-ray image receptor. We measured transit time and drift mobility of charge carriers of a-Se photoconductor using time-of-flight method. We made a testing glass with a-Se of $100{\mu}m$ thickness on corning glass using thermal evaporation method. As a result of this experiment, electron and hole transit time was each $229.17{\mu}s$ and $8.73{\mu}s$ at $10V/{\mu}m$ electric field and drift mobility was each $0.00174cm^2/V{\cdot}s$, $0.04584cm^2/V{\cdot}s$. But the results shows us different measurement value of electron and charge drift mobility and it was investigated about charge transport properties and trap mechanism.

• The Journal of the Korea Contents Association
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• v.10 no.6
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• pp.329-335
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• 2010

Digital imaging detectors can use a variety of detection materials to convert X-ray radiation either to light or directly to electron charge. Many detectors such as amorphous silicon flat panels, CCDs, and CMOS photodiode arrays incorporate a scintillator screen to convert x-ray to light. The digital radiography systems based on semiconductor detectors, commonly referred to as flat panel detectors, are gaining popularity in the clinical & hospital. The X-ray detectors are described between a-Silicon based indirect type and a-Selenium based direct type. The DRS of detectors is used to convert the x-ray to electron hole pairs. Image processing is described by specific image features: Latitude compression, Contrast enhancement, Edge enhancement, Look up table, Noise suppression. The image features are tuned independently. The final enhancement result is a combination of all image features. The parameters are altered by using specific image features in the different several hospitals. The image in a radiological report consists of two image evaluation processes: Clinical image parameters and MTF is a descriptor of the spatial resolution of a digital imaging system. We used the edge test phantom and exposure procedure described in the IEC 61267 to obtain an edge spread function from which the MTF is calculated. We can compare image in the processing parameters to change between original and processed image data. The angle of the edge with respect to the axes of detector was varied in order to determine the MTF as a function of direction. Each MTF is integrated within the spatial resolution interval of 1.35-11.70 cycles/mm at the 50% MTF point. Each image enhancement parameters consists of edge, frequency, contrast, LUT, noise, sensitometry curve, threshold level, windows. The digital device is also shown to have good uniformity of MTF and image parameters across its modality. The measurements reported here represent a comprehensive evaluation of digital radiography system designed for use in the DRS. The results indicate that the parameter enables very good image quality in the digital radiography. Of course, the quality of image from a parameter is determined by other digital devices in addition to the proper clinical image.

• Journal of radiological science and technology
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• v.28 no.4
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• pp.267-272
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• 2005

The effects of As addition in amorphous selenium (a-Se) films for digital X-ray conversion material have been studied using the moving photocarrier grating (MPG) technique. This method utilizes the moving interference pattern generated by the superposition of the two frequency shifted laser beams for the illumination of the sample. This moving intensity grating induces a short circuit current, jsc in a-Se:As film. The transport parameters of the sample are extracted from the grating-velocity dependent short circuit current induced in the sample along the modulation direction. The electron and hole mobility, and recombination lifetime of a-Se films with arsenic (As) additions have been obtained. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with X-ray sensitivity for a-Se:As device. The fabricated a-Se(0.3% As) device film exhibited the highest X-ray sensitivity out of 5 samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.432-435
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• 2002

The ultimate study of this research is to improve the properties of digital X-ray receptor based on amorphous selenium. There are being two prominent studying for Digital Radiography. Direct and Indirect method of Digital Radiography are announced for producing high quality digital image. But each two systems have strength and weakness. This is a basic research for developing of Hybrid digital radiography which is a new type X-ray detector. ln this study, we investigated the electrical characteristic of multi-layer$(CaWO_4+a-Se)$ as a photoconductor according to the changing iodine composition ratio. The iodine composition ratio of a-Se compound is classified into 5 different kinds which have 30ppm, 100ppm, 300ppm, 500ppm, 700ppm and were made test sample throught thermo-evaporation. The phosphor layer of $CaWO_4$ was overlapped on a-Se using EFIRON optical adhesives. We measured the dark and photo current about the test sample and compared the electrical characteristic of the net charge and signal-to-noise ratio. Among other things, test sample of compound material of 700ppm iodine showed good characteristic of $2.53nA/cm^2$ dark current and $479nC/cm^2{\cdot}mR$ net charge at $3V/{\mu}m$.