• Journal of the Mineralogical Society of Korea
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• v.31 no.4
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• pp.287-293
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• 2018

Amorphous silica ($SiO_2$) silt grains were found in some soils of Korean Peninsula. Scanning electron microscopy of polished section of soils revealed ellipsoidal amorphous $SiO_2$ grains with numerous submicron pores concentrated in the interior. Their amorphous structure was confirmed by lattice imaging and electron diffraction under transmission electron microscope. Amorphous $SiO_2$ grains were not found in the eolian sediment of the Chinese loess plateau. Although the origin of the amorphous $SiO_2$ grain is uncertain, they are likely either phytolith or weathering product of volcanic ash. The amorphous $SiO_2$ silt grains are not useful as a tracer of long-range transport mineral dust in soils.

• Transactions on Electrical and Electronic Materials
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• v.18 no.6
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• pp.323-329
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• 2017

This reports the electrical behavior, bonding structure and Schottky contact of gallium-zinc-oxide (GZO) thin film annealed at $100{\sim}400^{\circ}C$. The mobility of GZO with high density of PL spectra and crystal structure was also increased because of the structural matching between GZO and Si substrate of a crystal structure. However, the GZO annealed at $200^{\circ}C$ with an amorphous structure had the highest mobility as a result of a band to band tunneling effect. The mobility of GZO treated at low annealing temperatures under $200^{\circ}C$ increased at the GZO with an amorphous structure, but that at high temperatures over $200^{\circ}C$ also increased when it was the GZO of a crystal structure. The mobility of GZO with a Schottky barrier (SB) was mostly increased because of the effect of surface currents as well as the additional internal potential difference.

• Proceedings of the Membrane Society of Korea Conference
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• 2004.03a
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• pp.77-102
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• 2004

Carbon materials obtained from organic polymers are usually amorphous structure. The structure of carbon materials is not nearly as well defined as that of zeolite. Carbon are amorphous materials with comparatively wide pore size distribution as compared to the crystalline zeolites with monodisperse ultramicropore and micropore dimensions. (omitted)

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.368.1-368.1
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• 2014

We proposed amorphous GeSe-based ReRAM device of metal-insulator-metal (M-I-M) structure. The operation characteristics of memory device occured unipolar switching characteristics. By introducing the concepts of valance-alternation-pairs (VAPs) and chalcogen vacancies, the unipolar resistive switching operation had been explained. In addition, the current transport behavior were analyzed with space charge effect of VAPs, Schottky emission in metal/GeSe interface and P-F emission by GeSe bulk trap in mind. The GeSe ReRAM device of M-I-M structure indicated the stable memory switching characteristics. Furthermore, excellent stability, endurance and retention characteristics were also verified.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.36.2-36.2
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• 2011

Titanium and its alloys have been widely used for orthopedic implants because of their good biocompatibility. We have previously shown that the crystalline titania layers formed on the surface of titanium metal via anodic oxidation can induce apatite formation in simulated body fluid, whereas amorphous titania layers do not possess apatite-forming ability. In this study, hot water and heat treatments were applied to transform the titania layers from an amorphous structure into a crystalline structure after titanium metal had been anodized in acetic acid solution. The apatite-forming ability of titania layers subjected to the above treatments in simulated body fluid was investigated. The XRD and SEM results indicated hot water and/or heat treatment could greatly transform the crystal structure of titania layers from an amorphous structure into anatase, or a mixture of anatase and rutile.The abundance of Ti-OH groups formed by hot water treatment could contribute to apatite formation on the surface of titanium metals, and subsequent heat treatment would enhance the bond strength between the apatite layers and the titanium substrates. Thus, bioactive titanium metals could be prepared via anodic oxidation and subsequent hot water and heat treatment that would be suitable for applications under load-bearing conditions.

• Journal of the Semiconductor & Display Technology
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• v.16 no.4
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• pp.75-78
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• 2017

The $CO_2$ gas responsibility of $SnO_2$ thin films was researched with various annealing temperatures. $SnO_2$ was prepared on n-type Si substrate by RF magnetron sputtering system and annealed in a vacuum condition. The bonding structure of $SnO_2$ was changed from amorphous to crystal structure with increasing the annealing temperature, and the content of oxygen vacancy was researched the highest of the annealed at $60^{\circ}C$. The $SnO_2$ annealed at $60^{\circ}C$ had the characteristics of the highest capacitance. The special properties of $CO_2$ gas responsibility was found at the $SnO_2$ thin film annealed at $60^{\circ}C$ with amorphous structure because of the combination with the oxygen vacancies and $CO_2$ gases changed the resistivity. The amorphous structure enhanced the responsibility at the $SnO_2$ surface and the conductivity of $SnO_2$ thin film.

• Current Applied Physics
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• v.18 no.11
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• pp.1289-1293
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• 2018

The influence of crystallization treatment on the structure, magnetic properties and magnetocaloric effect of $Gd_{71}Ni_{29}$ melt-spun ribbons has been investigated in detail. Annealing of the melt-spun samples at 610 K for 30 min, a majority phase with a $Fe_3C$-type orthorhombic structure (space group, Pnma) and a minority phase with a CrB-type orthorhombic structure (space group, Cmcm) were obtained in the amorphous matrix. The amorphous melt-spun ribbons undergo a second-order ferromagnetic to paramagnetic phase transition at 122 K. For the annealed samples, two magnetic phase transitions caused by amorphous matrix and $Gd_3Ni$ phases occur at 82 and 100 K, respectively. The maximum magnetic entropy change $(-{\Delta}S_M)^{max}$ is $9.0J/(kg{\cdot}K)$ (5T) at 122 K for the melt-spun ribbons. The values of $(-{\Delta}S_M)^{max}$ in annealed ribbons are 1.0 and $5.7J/(kg{\cdot}K)$, corresponding to the two adjacent magnetic transitions.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.322-325
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• 2009

Amorphous oxide semiconductors (AOSs) are expected as new channel materials in TFTs for largearea and/or flexible FPDs, and several prototype displays have been demonstrated in these five years since the first report of AOS TFT. In this paper, we review fundamental materials science of AOSs that have been clarified to date in connection with operation characteristics of AOS TFTs.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.1
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• pp.51-56
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• 2012

In the present study, we investigated the effect of mechanical alloying (MA) on the formation of amorphous VCo system through solid state reaction during ball milling. Two types of powder samples, ${\sigma}$-VCo intermetallic compound and $V_{50}Co_{50}$ powder mixture, were applied as a starting materials. With increasing milling time, a structural characteristics into the amorphous state is distinctly observed from the structural factor and radial distribution by X-ray diffraction. Amorphization has been observed in all two types of samples after the milling for 120 hrs. DSC spectrum of $V_{50}Co_{50}$ powder sample milled for 60 hrs indicates a sharp exothermic peak from the crystallization at $600^{\circ}C$. The structure factor, S(Q) and radial distribution function, RDF(r), observed by X-ray diffraction gradually change into a structure characteristic of an amorphous state with increasing MA time.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1308-1311
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• 2007

Leakage current produced by backside illumination on bottom-gated amorphous silicon thin film transistor has been investigated. The experimental results show that the leakage current of bottomgated structure is significantly dependent on the shape of amorphous silicon pattern. A proper design of amorphous silicon pattern has been suggested in viewpoint of reducing the leakage current as well as mass production.