• 제목/요약/키워드: amorphous silicon (a-Si)

검색결과 491건 처리시간 0.024초

Effect of Specific Surface Area on the Reaction of Silicon Monoxide with Porous Carbon Fiber Composites

  • Park, Min-Jin;Lee, Jae-Chun
    • The Korean Journal of Ceramics
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    • 제4권3호
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    • pp.245-248
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    • 1998
  • Porous carbon fiber composites (CFCs) having variable specific surface area ranging 35~1150 $\m^2$/g were reacted to produce silicon carbide fiber composites with SiO vapor generated from a mixture of Si and $SiO_2$ at 1673 K for 2 h under vacuum. Part of SiO vapor generated during conversion process condensed on to the converted fiber surface as amorphous silica. Chemical analysis of the converted CFCs resulting from reaction showed that the products contained 27~90% silicon carbide, 7~18% amorphous silica and 3~63% unreacted carbon, and the composition depended on the specific carbide, 7~18% amorphous silica and 3~63% unreacted carbon, and the composition depended on the specific surface area of CFCs. CFC of higher specific surface area yielded higher degree of conversion of carbon to silicon and conversion products of lower mechanical strength due to occurrence of cracks in the converted caron fiber. As the conversion of carbon to silicon carbide proceeded, pore size of converted CFCs increased as a result of growth of silicon carbide crystallites, which is also linked to the crack formation in the converted fiber.

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Relationship between Secondary Electron Emissions and Film Thickness of Hydrogenated Amorphous Silicon

  • Yang, Sung-Chae;Chu, Byung-Yoon;Ko, Seok-Cheol;Han, Byoung-Sung
    • KIEE International Transactions on Electrophysics and Applications
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    • 제4C권4호
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    • pp.185-189
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    • 2004
  • The temporal variation of a secondary electron emission coefficient (${\gamma}$ coefficient) of hydrogenated amorphous silicon (a-Si:H) was investigated in a dc silane plasma. Estimated ${\gamma}$ coefficients have a value of 2.73 ${\times}$ 10$^{-2}$ on the pure aluminum electrode and 1.5 ${\times}$ 10$^{-3}$ after 2 hours deposition of -Si:H thin films on a cathode. It showed an abrupt decrease for about 30 minutes before saturation. The variation of the ${\gamma}$ coefficient was estimated as a function of the thin film thickness, and the film thickness was about 80 nm after 30 minutes deposition time. These results are compared with the results of a computer simulation for ion penetration into a cathode.

광 CVD에 의한 비정질 실리콘 박막 특성 향상 (The improvement of characteristics for hydrogenated amorphous silicon thin films by photo-induced CVD)

  • 김용상;이성규;전명철;박진석;한민구
    • E2M - 전기 전자와 첨단 소재
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    • 제7권2호
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    • pp.94-99
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    • 1994
  • The purpose of this work is to investigate the interface characteristics of hydrogenated amorphous silicon thin films prepared by PECVD and photo-induced CVD and to examine the annealing effects of ultraviolet irradiation on hydrogenated amorphous silicon thin films which were degraded by visible light illumination. The interface layer thickness of films deposited by photo-induced CVD was about 600-900.angs. while that by PECVD was about 1000-1300.angs.. These results can show that the quality of interface layer in photo induced CVD film is better than that in PECVD sample. The electrical properties are improved by ultraviolet irradiation on visible light soaked a-Si:H films using photo-CVD light sources, probably due to the fact that UV generates phonons in a-Si:H films and anneal the meta stable defects.

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리튬 이온 전지용 Si/Mo 다층박막 음극의 전기화학적 특성 (Electrochemical Characteristics of Si/Mo Multilayer Anode for Lithium-Ion Batteries)

  • 박종완
    • 한국재료학회지
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    • 제16권5호
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    • pp.297-301
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    • 2006
  • Si/Mo multilayer anode consisting of active/inactive material was prepared using rf/dc magnetron sputtering. Molybdenum acts as a buffer against the volume change of the Silicon. Multilayer deposited on RT (reversible treatment) copper foil current collector to enhance adhesion between Silicon and copper foil. Deposited Silicon was identified as an amorphous. Amorphous has a relatively open structure than crystal structure, thus prevents the lattice expansion and has many diffusion paths of Li ion. When deposited time of Silicon and Molybdenum is 30 second and 2 second respectably, electrode has more capacity and good cycle stability. A 3000 nm thick multilayer was maintained 99% of the initial capacity (1624 $mAhg^{-1}$) after 100 cycles. As the increase of the multilayer thickness (4500 nm, 6000 nm), Si/Mo mutilayer anodes show aggravation cycle stability.

Growth and Characterization of a-Si :H and a-SiC:H Thin Films Grown by RF-PECVD

  • Kim, Y.T.;Suh, S.J.;Yoon, D.H.;Park, M.G.;Choi, W.S.;Kim, M.C.;Boo, J.-H.;Hong, B.;Jang, G.E.;Oh, M.H.
    • 한국표면공학회지
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    • 제34권5호
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    • pp.503-509
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    • 2001
  • Thin films of hydrogenated amorphous silicon (a-Si : H) and hydrogenated amorphous silicon carbide (a-SiC:H) of different compositions were deposited on Si(100) wafer and glass by RF plasma-enhanced chemical vapor deposition (RF-PECVD). In the present work, we have investigated the effects of the RF power on the properties, such as optical band gap, transmittance and crystallinity. The Raman data show that the a-Si:H material consists of an amorphous and crystalline phase for the co-presence of two peaks centered at 480 and $520 cm^{-1}$ . The UV-VIS data suggested that the optical energy band gap ($E_{g}$ ) is not changed effectively with RF power and the obtained $E_{g}$(1.80eV) of the $\mu$c-Si:H thin film has almost the same value of a-Si:H thin film (1.75eV), indicating that the crystallity of hydrogenated amorphous silicon thin film can mainly not affected to their optical properties. However, the experimental results have shown that$ E_{g}$ of the a-SiC:H thin films changed little on the annealing temperature while $E_{g}$ increased with the RF power. The Raman spectrum of the a-SiC:H thin films annealed at high temperatures showed that graphitization of carbon clusters and microcrystalline silicon occurs.

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수소화된 비정질 실리콘 박막을 이용한 웨이퍼 패시베이션 특성 연구 (A study on wafer surface passivation properties using hydrogenated amorphous silicon thin film)

  • 이승직;김기형;오동해;안황기
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2010년도 추계학술대회 초록집
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    • pp.46.1-46.1
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    • 2010
  • Surface passivation of crystalline silicon(c-Si) surface with a-Si:H thin films has been investigated by using quasi-steady-state photo conductance(QSSPC) measurements. Analyzing the influence of a-Si:H film thickness, process gas ratio, deposition temperature and post annealing temperature on the passivation properties of c-Si, we optimized the passivation conditions at the substrate temperature of $200-250^{\circ}C$. Best surface passivation has been obtained by post-deposition annealing of a-Si:H film layer. Post annealing around the deposition temperature was sufficient to improve the surface passivation for silicon substrates. We obtained effective carrier lifetimes above 5.5 ms on average.

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HWCVD를 이용한 Amorphous Si 박막 증착공정에서 수소량에 따른 박막성장 특성 (Hydrogen-Dependent Catalytic Growth of Amorphous-Phase Silicon Thin-Films by Hot-Wire Chemical Vapor Deposition)

  • 박승일;지형용;김명준;김근주
    • Current Photovoltaic Research
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    • 제1권1호
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    • pp.27-32
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    • 2013
  • We investigated the growth mechanism of amorphous-phase Si thin films in order to improve the film characteristics and circumvent photo-degradation effects by implementation of hot-wire chemical vapor deposition. Amorphous silicon thin films grown in a silane/hydrogen mixture can be decomposed by a resistive heat filament. The structural properties were observed by Raman spectroscopy, FTIR, SEM, and TEM. The electrical properties of the films were measured by photo-conductivity, dark-conductivity, and photo-sensitivity. The contents of Si-H and $Si-H_n$ bonds were measured to be 19.79 and 9.96% respectively, at a hydrogen flow rate of 5.5 sccm, respectively. The thin film has photo-sensitivity of $2.2{\times}10^5$ without a crystalline volume fraction. The catalyst behavior of the hot-wire to decompose the chemical precursors by an electron tunneling effect depends strongly on the hydrogen mixture rate and an amorphous Si thin film is formed from atomic relaxation.

High Work Function of AZO Fhin Films as Insertion Layer between TCO and p-layer and Its Application of Solar Cells

  • Kang, Junyoung;Park, Hyeongsik;Yi, Junsin
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.426.1-426.1
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    • 2016
  • We report high work function Aluminum doped zinc oxide (AZO) films as insertion layer as a function of O2 flow rate between transparent conducting oxides (TCO) and hydrogenated amorphous silicon oxide (a-SiOx:H) layer to improve open circuit voltage (Voc) and fill factor (FF) for high efficiency thin film solar cell. However, amorphous silicon (a-Si:H) solar cells exhibit poor fill factors due to a Schottky barrier like impedance at the interface between a-SiOx:H windows and TCO. The impedance is caused by an increasing mismatch between the work function of TCO and that of p-type a-SiOx:H. In this study, we report on the silicon thin film solar cell by using as insertion layer of O2 reactive AZO films between TCO and p-type a-SiOx:H. Significant efficiency enhancement was demonstrated by using high work-function layers (4.95 eV at O2=2 sccm) for engineering the work function at the key interfaces to raise FF as well as Voc. Therefore, we can be obtained the conversion efficiency of 7 % at 13mA/cm2 of the current density (Jsc) and 63.35 % of FF.

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탄화규소 나노섬유의 제조 및 물성 (Preparation and Characterization of Silicon Carbide Nanofiber)

  • 신현익;송현종;김명수;임연수;이재춘
    • 한국세라믹학회지
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    • 제37권4호
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    • pp.376-380
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    • 2000
  • Carbon nanofibers with an average diameter of 100nm were reacted with SiO vapor generated from a mixture of Si and SiO2 to produce silicon carbide nanofibers at temperature ranging 1200∼1500$^{\circ}C$ under vacuum. The nanofiber reacted at 1200$^{\circ}C$ for two hours consisted of silicon carbide with an average crystallite size of 10-20nm, amorphous silica and a significant amount of unreacted carbon. The surface area of silicon carbide nanofiber, obtained after removal of amorphous silica and unreacted carbon from converted carbon nanofibers at 1200$^{\circ}C$, was as high as 150㎡/g. With increasing reaction temperature to 1500$^{\circ}C$, the surface area was decreased to 14㎡/g. Growth of SiC crystallite size with increasing conversion temperature of carbon nanofiber was confirmed from Scherrer formula using the (111) diffraction line and TEM images of converted carbon nanofibers.

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Advanced Amorphous Silicon TFT Backplane for AMOLED Display

  • Han, Min-Koo;Shin, Hee-Sun
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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    • pp.1673-1676
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    • 2007
  • We have investigated the degradation mechanism of hydrogenated amorphous silicon (a- Si:H) thin film transistors (TFTs) The threshold voltage of driving a-Si:H TFT is shifted severely by electrical bias due to a charge trapping and defect state creation. And the short channel TFTs exhibit less threshold voltage degradation than long channel TFTs. We propose the pixel circuits employing negative bias annealing scheme in order to suppression of threshold voltage shift of a-Si:H TFT.

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