• Applied Chemistry for Engineering
• /
• v.16 no.1
• /
• pp.112-116
• /
• 2005

We investigated the surface modification method for the preparation of organic-inorganic hybrid composite thin film. Gelatin obtained from the decomposition of collagen was allowed to adsorb in a polystyrene tissue culture dish for 2 h to from layers of gelatin. Supersaturated ionic solution of calcium and phosphorus was injected on the gelatin adsorbed layer to form calcium phosphate thin film. During the initial period of incubation, nucleates were formed. With increase of the incubation time, CaP (calcium phosphate) thin film grew on the surface of the culture dish. The gelatin/CaP thin film displayed the highly porous three-dimensional surface structure. Attenuated, total reflectance Fourier transform, infra-red spectroscopy (ATR-FTIR) was used to analyze the chemical properties of CaP film. The analysis demonstrated that the CaP film formed at initial period of treatment appeared to be amorphous. With increase of incubation time, the crystallinity of the film was slightly increased, but the presence of the peaks for the low crystalline CaP confirmed that the CaP thin film prepared in this study was poorly crystallized.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2011.05a
• /
• pp.1.1-1.1
• /
• 2011

Printed electronics based on the direct writing of solution processable functional materials have been of paramount interest and importance. In this talk, the synthesis of printable inorganic functional materials (conductors and semiconductors) for thin-film transistors (TFTs) and photovoltaic devices, device fabrication based on a printing technique, and specific characteristics of devices are presented. For printable conductor materials, Ag ink is designed to achieve the long-term dispersion stability and good adhesion property on a glass substrate, and Cu ink is sophisticatedly formulated to endow the oxidation stability in air and even aqueous solvent system. The both inks were successfully printed onto either polymer or glass substrate, exhibiting the superior conductivity comparable to that of bulk one. In addition, the organic thin-film transistor based on the printed metal source/drain electrode exhibits the electrical performance comparable to that of a transistor based on a vacuum deposited Au electrode. For printable amorphous oxide semiconductors (AOSs), I introduce the noble ways to resolve the critical problems, a high processing temperature above $400^{\circ}C$ and low mobility of AOSs annealed at a low temperature below $400^{\circ}C$. The dependency of TFT performances on the chemical structure of AOSs is compared and contrasted to clarify which factor should be considered to realize the low temperature annealed, high performance AOSs. For photovoltaic application, CI(G)S nanoparticle ink for solution processable high performance solar cells is presented. By overcoming the critical drawbacks of conventional solution processed CI(G)S absorber layers, the device quality dense CI(G)S layer is obtained, affording 7.3% efficiency CI(G)S photovoltaic device.

• Korean Journal of Materials Research
• /
• v.20 no.9
• /
• pp.451-456
• /
• 2010

A promising candidate material for a $H_2$ permeable membrane is SiC due to its many unique properties. A hydrogen-selective SiC membrane was successfully fabricated on the outer surface of an intermediate multilayer $\gamma-Al_2O_3$ with a graded structure. The $\gamma-Al_2O_3$ multilayer was formed on top of a macroporous $\alpha-Al_2O_3$ support by consecutively dipping into a set of successive solutions containing boehmite sols of different particle sizes and then calcining. The boehmite sols were prepared from an aluminum isopropoxide precursor and heated to $80^{\circ}C$ with high speed stirring for 24 hrs to hydrolyze the precursor. Then the solutions were refluxed at $92^{\circ}C$ for 20 hrs to form a boehmite precipitate. The particle size of the boehmite sols was controlled according to various experimental parameters, such as acid types and acid concentrations. The topmost SiC layer was formed on top of the intermediate $\gamma-Al_2O_3$ by pyrolysis of a SiC precursor, polycarbosilane, in an Ar atmosphere. The resulting amorphous SiC-on-$Al_2O_3$ composite membrane pyrolyzed at $900^{\circ}C$ possessed a high $H_2$ permeability of $3.61\times10^{-7}$ $mol{\cdot}m^{-2}{\cdot}s^{-1}{\cdot}Pa^{-1}$ and the $H_2/CO_2$ selectivity was much higher than the theoretical value of 4.69 in all permeation temperature ranges. Gas permeabilities through a SiC membrane are affected by Knudsen diffusion and a surface diffusion mechanism, which are based on the molecular weight of gas species and movement of adsorbed gas molecules on the surface of the pores.

• Journal of IKEEE
• /
• v.21 no.2
• /
• pp.170-173
• /
• 2017

In this study, we fabricate amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with three different gate electrode materials of Al, Mo and Pt on plastic substrates and investigate their electrical characteristics. Compared to an a-IGZO TFT with Al gate electrode, the threshold voltage of an a-IGZO TFT with a Pt electrode decreases from -4.2 to -0.3 V. and the filed-effect mobility is improved from 15.8 to $22.1cm^2/V{\cdot}s$. The threshold voltage shift of the TFT is affected by the difference between the work function of the gate electrode and the Fermi energy of the channel layer. Moreover, the Pt gate electrode is considered to be the suitable material in terms of the electrical characteristics of the TFT. In addition, an description on an a-IGZO TFT with a Mo electrode will be given here.

• Bulletin of the Korean Chemical Society
• /
• v.32 no.9
• /
• pp.3290-3294
• /
• 2011

The properties of monomeric and dimeric salen-aluminum complexes, [salen(3,5-$^tBu)_2$Al(OR)], R = $OC_6H_4-p-C_6H_6$ (H1) and R = [salen(3,5-$^tBu$)AlOPh]C$(CH_3)_2$ (H2) (salen = N,N'-bis-(salicylidene)-ethylenediamine) as host layer materials in red phosphorescent organic light-emitting diodes (PhOLEDs) were investigated. H1 and H2 exhibit high thermal stability with decomposition temperature of 330 and $370^{\circ}C$. DSC analyses showed that the complexes form amorphous glasses upon cooling of melt samples with glass transition temperatures of 112 and $172^{\circ}C$. The HOMO (ca. -5.2~-5.3 eV) and LUMO (ca. -2.3~-2.4 eV) levels with a triplet energy of ca. 1.92 eV suggest that H1 and H2 are suitable for a host material for red emitters. The PhOLED devices based on H1 and H2 doped with a red emitter, $Ir(btp)_2$(acac) (btp = bis(2-(2'-benzothienyl)-pyridinato-N,$C^3$; acac = acetylacetonate) were fabricated by vacuum-deposition and solution process, respectively. The device based on vacuum-deposited H1 host displays high device performances in terms of brightness, luminous and quantum efficiencies comparable to those of the device based on a CBP (4,4'-bis(Ncarbazolyl) biphenyl) host while the solution-processed device with H2 host shows poor performance.

• Journal of the Korean Ceramic Society
• /
• v.31 no.12
• /
• pp.1429-1436
• /
• 1994

We have prepared Ba0.5Sr0.5TiO3 thin films on Si substrate without buffer layer. Deposition was carried out by off-axis rf magnetron sputtering method using Ba0.5Sr0.5TiO3 stoichiometric target. The substrate temperature was changed from 40$0^{\circ}C$ to $700^{\circ}C$ during deposition. As the substrate temperature increased, relative intensity of (110) peak increased up to $600^{\circ}C$, however preferred orientation changed from (110) to (h00) beyond $650^{\circ}C$ of substrate temperature. Deposited films showed microstructures with fine grains whose diameters are less than 100 nm, and columnar structure was observed in the cross-sectional SEM micrograph. AES depth profile showed no significant diffusion at the interfacial reaction area. The effective dielectric constant of films showed maximum value at $600^{\circ}C$, and the leakage current increased with increasing substrate temperature, which may be ascribed to the crystallization of amorphous phases at grain boundary.

• Journal of the Korean Ceramic Society
• /
• v.52 no.6
• /
• pp.462-466
• /
• 2015

This paper reports the microstructure of hot-pressed $ZrB_2$-SiC ceramics with added $B_4C$ as characterized by transmission electron microscopy. $ZrB_2$ has a melting point of $3245^{\circ}C$, a relatively low density of $6.1g/cm^3$, and specific mechanical properties at an elevated temperature, making it a candidate for application to environments with ultra-high temperatures which exceed $2000^{\circ}C$. Due to the non-sinterability of $ZrB_2$-based ceramics, research on sintering aids such as $B_4C$ or $MoSi_2$ has become prominent recently. From TEM investigations, an amorphous layer with contaminant oxide is observed in the vicinity of $B_4C$ grains remaining in hot-pressed $ZrB_2$-SiC ceramics with $B_4C$ as an additive. The effect of a $B_4C$ addition on the microstructure of this system is also discussed.

• Journal of the Korean Ceramic Society
• /
• v.32 no.1
• /
• pp.95-105
• /
• 1995

Ceria(CeO2) stabilized zirconia(CeSZ) sol was synthesized with zirconium n-butoxide Zr(OC4H9)4 and cerium nitrate hexahydrate Ce(NO3)3.6H2O as precursors and ethylacetoacetate(EAcAc) as a chelating agent under atmosphere. CeSZ films were deposited on AISI 304 stainless steel using the prepared polymeric sol by dipcoating and the coating characteristics were investigated by XRD, ellipsometry, scratch test and SEM. The CeSZ film began to crystallize from amorphous to tetragonal phase at 40$0^{\circ}C$ and it was not converted into monoclinic phase up to 100$0^{\circ}C$ by the addition of 16mol% CeO2 as a stabilizer which could suppress phase transformation of zirconia. The CeSZ films were prepared by varying the EAcAc contents and the cncentration of CeSZ sol and measured the thickness and refractive index. From these results, it was found that the EAcAc contents and concentration of CeSZ coating sol evidently affect the densification of CeSZ film. The CeSZ film coated with 0.4M CeSZ sol and heat-treated at $600^{\circ}C$ for 10min had thickness of 50nm and 17% porosity. The CeSZ film on 304 stainless steel effectively acted as a protective layer against oxidation up to 80$0^{\circ}C$ and had superior corrosion resistance in 25% H2SO4 solution for 4.5 hrs.

• The Plant Pathology Journal
• /
• v.21 no.3
• /
• pp.252-257
• /
• 2005

In single infection of Tobacco mosaic virus-U1 (TMV­U1) or Pepper mild mottle virus (PMMoV), mosaic symptoms were produced on the chili pepper cultivars of 'Cheongyang' and 'Wangshilgun'. However, in cultivars of 'Manitta' and 'Bugang', no symptoms were occurred. In single infection of Pepper mottle virus (PepMoV), symptoms of mottle and malformation were produced on the tested cultivars of 'Manitta', 'Bugang', 'Cheongyang', and 'Wangshilgun'. In the cultivars of 'Cheongyang' and 'Wangshilgun', synergistic symptoms of stunt and lethal death were induced by mixed infections in the two combinations of TMV-U1 + PepMoV and PMMoV+PepMoV. However, in cultivars of 'Manitta' and 'Bugang', synergistic symptoms were not noted, but mottling which was milder than that of single infection was produced. Cells infected singly with TMV-U1 and PMMoV in the cultivars of 'Cheongyang' and 'Wangshilgun', respectively, had the typical ultra-structures of tobamovirus as the stacked-band structure and multiple spiral aggregate (SA). In the cells and tissues infected with PepMoV on the cultivars of 'Cheongyang', 'Wangshilgun', 'Manitta' and 'Bugang', the potyvirus inclusions of pinwheels, scrolls, lamminated aggregates and amorphous inclusion were observed. In the cells infected mixedly with combinations of TMV­U1+PepMoV and PMMoV+PepMoV, the virus particles and inclusions of the two different viruses were found simultaneously in the same cytoplasm. The amounts of virus particles in mixed infections were more abundant than in single infection. The angled-layer aggregates (ALA) were observed only in the cells infected with both TMV-U1 and PepMoV.

• Korean Journal of Materials Research
• /
• v.9 no.5
• /
• pp.509-514
• /
• 1999

Interest in the integrated capacitors, which make it possible to reduce the size of and to obtain improved electrical performance of an electronic system, is expanding. In this study, $Ta_2$O\ulcorner thin film capacitors for MCM integrated capacitors were fabricated on a Upilex-S polymer film by DC magnetron reactive sputtering and the effects of low temperature annealing at various atmospheres and substrate surface morphology on the capacitor characteristics were discussed. The low temperature($150^{\circ}C$) annealing produced improved capacitor yield irrespective of the annealing at mosphere. But the leakage current of the $O_2$-annealed film was larger than that of any other films. This is presumably mosphere. But the leakage current of the $O_2$-annealed film was larger than that of any other films. This is presumably due to the change of the $Ta_2$O\ulcorner film surface by oxygen, which was explained by conduction mechanism study. Leakage current and breakdown field strength of the capacitors fabricated on the Upilex-S film were 7.27$\times$10\ulcornerA/$\textrm{cm}^2$ and 1.0 MV/cm respectively. These capacitor characteristics were inferior to those of the capacitors fabricated on the Si substrate but enough to be used for decoupling capacitors in multilayer package. Roughness Analysis of each layer by AFM demonstrated that the properties of the capacitors fabricated on the polymer film were affected by the surface morphology of the substrate. This substrate effect could be classified into two factors. One is the surface morphology of the polymer film and the other is the surface morphology of the metal bottom electrode determined by the deposition process. Therefore, the control of the two factors is important to obtain improved electrical of capacitors deposited on a polymer film.