• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.1220-1223
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• 2003

A new type electric double layer capacitor (EDLC) was constructed by using carbon nanofibers (CNFs) and DAAQ(1,5-diaminoanthraquinone) electrode. Carbonaceous materials are found in variety forms such as graphite, diamond, carbon fibers etc. While all the carbon nanofibers include impurities such as amorphous carbon, nanoparticles, catalytic metals and incompletely grown carbons. We have eliminated of Ni particles and some carbonaceous particles in nitric acid. Nitric acid treated CNFs could be covered with very thin DAAQ oligomer from the results of CV and TG analyses and SEM images. A crystalline supramolecular oligomer of 1,5-diaminoanthraquinone(DAAQ) was successfully prepared as a thin film by electrochemical oxidation from an acidic non-aqueous medium. DAAQ oligomer film exhibited a specific capacity as 45-50 Ah/kg in 4M $H_2SO_4$. Its electrochemical characteristics were investigated by cyclic voltammetry. And compared with different electrolyte of aqueous type. During ultrasonic irradiation CNFs was to disperse in 0.1M $H_2SO_4$. As a result, CNFs coated by DAAQ composite electrode showed relatively good electrochemical behaviors.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.381.1-381.1
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• 2014

In this study, we investigated the deposition behavior and the etch resistivity of plasma polymerized carbon hardmask (ppCHM) film with the variation of process temperature. The etch resistivity of deposited ppCHM film was analyzed by thickness measurement before and after direct contact reactive ion etching process. The physical and chemical properties of films were characterized on the Fourier transform infrared (FT-IR) spectroscope, Raman spectroscope, stress gauge, and ellipsometry. The deposition behavior of ppCHM process with the variation of temperature was correlated refractive index (n), extinction coefficient (k), intrinsic stress (MPa), and deposition rate (A/s) with the hydrocarbon concentration, graphite (G) and disordered (D) peak by analyzing the Raman and FT-IR spectrum. From this experiment we knew an optimal deposition condition for structure of carbon hardmask with the higher etch selectivity to oxide. It was shown the density of ppCHM film had 1.6~1.9 g/cm3 and its refractive index was 1.8~1.9 at process temperature, $300{\sim}600^{\circ}C$. The etch selectivity of ppCHM film was shown about 1:4~1:8 to undoped siliconoxide (USG) film (etch rate, 1300 A/min).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.157-157
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• 2011

Graphene has generated significant interest in the recent years as a functional material for electronics, sensing, and energy applications due to its unique electrical, optical, and mechanical properties. Much of the considerable interest in graphene stems from results obtained for samples mechanically exfoliated from graphite. Practical applications, however, require reliable and well-controlled methods for fabrication of large area graphene films. Recently high quality graphene layers were fabricated using chemical vapor deposition (CVD) on nickel and copper with methane as the source of the carbon atoms. Here, we report a simple and efficient method to synthesize graphene layers using solid carbon source. Few-layer graphene films are grown using filtered vacuum arc source (FVAS) technique by evaporation of carbon atom on Ni catalytic metal and subsequent annealing of the samples at 800$^{\circ}$C. In our system, carbon atoms diffuse into the Ni metal layer at elevated temperatures followed by their segregation as graphene on the free surface during the cooling down step as the solubility of carbon in the metal decrease. For a given annealing condition and cooling rate, the number of graphene layers is easily controlled by changing the thickness of the initially evaporated amorphous carbon film. Based on the Raman analysis, the quality of graphene is comparable to other synthesis methods found in the literature, such as CVD and chemical methods.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.1184-1187
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• 2003

Electrochemical capacitors are becoming attractive energy storage systems particularly for applications involving high power requirements such as hybrid systems consisting of batteries and electrochemical capacitors for electric vehicle propulsion. A new type electric double layer capacitor (EDLC) was constructed by using carbon nanofibers (CNFs) and DAAQ(1,5-diaminoanthraquinone) electrode. Carbonaceous materials are found in variety forms such as graphite, diamond, carbon fibers etc. While all the carbon nanofibers include impurities such as amorphous carbon, nanoparticles, catalytic metals and incompletely grown carbons. We have eliminated of Ni particles and some carbonaceous particles in nitric acid. Nitric acid treated CNFs could be covered with very thin DAAQ oligomer from the results of CV and TG analyses and SEM images. DAAQ oligomer film exhibited a specific capacity as 45-50 Ah/kg in 4M $H_2SO_4$. We established Process Parameters of the technique for the formation of nano-structured materials. Furthermore, improved the capacitive properties of the nano structured CNFs electrodes using controlled solution chemistry. As a result, CNFs coated by DAAQ composite electrode showed relatively good electrochemical behaviors in acidic electrolyte system with respect to specific capacity and scan rate dependency.

• Nuclear Engineering and Technology
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• 제55권3호
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• pp.902-907
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• 2023

To understand the eutectic reaction mechanism and the relocation behavior of the core debris is indispensable for the safety assessment of core disruptive accidents (CDAs) in sodium-cooled fast reactors (SFRs). This paper addresses reaction products and their distribution of the eutectic melting/solidifying reaction of boron carbide (B₄C) and stainless-steel (SS). The influence of the existence of carbon on the B₄C-SS eutectic reaction was investigated by comparing the iron boride (FeB)-SS reaction by Raman spectroscopy with Multivariate Curve Resolution (MCR) analysis. The scanning electron microscopy with dispersive X-ray spectrometer was also used to investigate the elemental information of the pure metals such as Cr, Ni, and Fe. In the B₄C-SS samples, a new layer was formed between B₄C/SS interface, and the layer was confirmed that the formed layer corresponded to amorphous carbon (graphite) or FeB or Fe₂B. In contrast, a new layer was not clearly formed between FeB and SS interface in the FeB-SS samples. All samples observed the Cr-rich domain and Fe and Ni-rich domain after the reaction. These domains might be formed during the solidifying process.

• 자원환경지질
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• 제18권1호
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• pp.65-92
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• 1985

A total of 12 mineral commodities significant in domestic output, economy and/or strategy of the Republic of Korea are chosen to examine the structural changes in production and demand-supply of these minerals during the last two decades of her industrialization. These include iron and manganese ores as the raw materials for iron and steel making, copper, zinc and tungsten ores among other non-ferrous metallic minerals, limestone (cement), kaolin, talc, pyrophyllite and graphite among other non-metallic minerals, and anthracite coal as the only domestic source of fossil energy. These are reviewed historically in time-series based on the statistical data which are tabulated and graphed in terms of domestic output, export, import, apparent demand-supply, its increasing rate, and self-sufficiency rate of each commodity. The increasing rates of demand-supply (IRDS) of some more important commodities are compared with those of Gross Domestic Production (GDP) and Economic Growth Rate (EGR) to evaluate how the IRDS contributed to the GDP and EGR. The major results revealed are as follows: Among the 12 commodities, the domestic output of 8 commodities appeared to have grown with steady upward trends: they are ores of lead, zinc and tungsten, limestone (cement), kaolin, talc, pyrophyllite and anthracite coal. Two commodities, ores of iron and copper, continued with unchanging or slightly declining trends and varied fluctuations, in spite of their cardinal importance to the heavy industry and strategy of Korea. The remaining two, graphite and manganese ore, have gradualy declined in domestic output in which the former has still enough resource potential but the latter has not and virtually ceased its domestic output. Trade patterns for mineral commodities in the Republic of Korea during the last two decades have changed greatly, being marked by a shift from mineral-exporting to mineral importing, mainly because of increasing consumption of mineral raw materials for industrialization rather than beceuse of decreasing output of domestic mineral commodities in quantity. In terms of trade patterns, the 12 commodities concerned in this study can be classified into the following four groups. The 1st group - ores of lead and tungsten have only been exported without imports. The 2nd group - amorphous graphite, and pyrophyllite have mainly been exported but partly been imported. The 3rd group - kaolin, talc and crystalline graphite have equally been exported and imported, but quantity of imports have rapidly been increased with time. The 4th group - ores of iron, manganese and zinc have shifted from exports to imports during the industrialization, particularly owing to the initiation of iron and steel making by the Pohang Iron and Steel Company in the middle 1970' s and the new establishment of the Onsan Zinc Refinery in the late 1970' s. All of the 12 commodities under considerations were far above 100% in self-sufficiency rate before or in the early 1960' s. Recently, however, most of them have been declined to below 100% except for those of limestone (cement) and pyrophyllite. It is particularly serious to identify that the self-sufficiency rates of the three important metallic minerals, iron, copper and manganese ores in 1982 appeared to be 5.1%, 0.5%, and 0.01%, respectively. The average self-sufficiency rate of the total domestic minerals produced in 1982 was 14.4% (in value) for that year. Mining industry appeared to be extremely high in its intermediate demand rate whereas its intermediate input rate to be quite low indicating that mineral raw materials have been exerted strong forward linkage effects upon the other industries rather than backward linkage effects. In comparing the curves of increasing rates of demand-supply of several major minerals - iron ore, manganese ore, copper ore, limestone (cement), kaolin, and anthracite coal - with those of Gross Domestic Production and Economic Growth Rate drawn on every graph, it is clearly shown that the curves of increasing rates of demand-supply comprise around 6 to 7 periods of cycles which roughly harmonious with those of the curves of GDP and EGR, except for the curve of anthracite coal of which the configuration seems to have resulted from the (artificial) government's mineral policy rather than from economic free market mechanism. The harmonic feature of these curves well suggests that the increasing rates of demand-supply of major minerals have been significantly contributed to the GDP and EGR. In addition, the wider amplitudes of the iron, manganese and copper curves than those of the limestone (cement) and kaolin curves indicate that the contribution of the former, metallic commodities, has been greater than that of the latter, non-metallic commodities.

• 한국진공학회지
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• 제10권4호
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• pp.431-439
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• 2001

비정질 다이아몬드 박막(amorphous-Diamond a-B)을 증착하기 위하여 제작된 Filtered Vacuum Arc Source (FVAS)는 60도의 굽힘 각도를 가지는 토러스형 구조로 토러스 반경 266 mm, 플라즈마 덕트 반경 80 % 전체 길이 600 mm이며, 1 개의 영구자석 및 5 개의 전자석으로 되어있다. 플라즈마 덕트는 임의의 전압을 인가할 수 있도록 전기적으로 절연 시켰으며, 덕트 내부는 배플을 설치하여 macro-particle의 되튐 현상을 방지하였다. 사용된 음극은 직경 80 mm의 graphite이다. 각 전자석이 플라즈마 인출에 미치는 영향은 taguchi 실험계획법을 이용, 수치 모사와 실험을 행하였다. 소스 전자석과 인출 전자석은 아크의 안정성에 영향을 주었고, 빔 인출 전류는 낮은 소스 전자석 전류와 특정한 필터 전자석 전류에서 최대값을 나타내었다. 이때 소스, 인출, 굽힘, 반사, 출구 전자석의 전류값은 1 A, 3 A, 5 A, 5 A, 5 A였으며, 아크 전류 30 A일 때, 빔 전류 밀도 3.2 mA/$\textrm{cm}^2$, 평균 증착률 5 $\AA$/sec를 얻었다. 또한 플라즈마 덕트의 바이어스 전압 증가에 따라, 빔 전류 밀도는 증가하였으며, 더 효율적인 빔을 인출할 수 있었다.

• 한국재료학회지
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• 제5권7호
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• pp.835-841
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• 1995

Si$_3$N$_4$가 추진기관 연소조건 하에서 흑연의 산화와 마모를 효과적으로 방지하는 다층 코팅재료로 쓰일 수 있도록 하기 위하여 저압화학기상증착법(LPCVD)으로 Si$_3$N$_4$를 코팅할 때의 증착특성에 대해 연구하였다. 흑연 위에 pack cementation방법으로 SiC를 코팅하고 그 위에 저압화학기상증착법으로 Si$_3$N$_4$를 코팅 하였으며, 증착온도와 반응기체입력비를 변화시키면서 이에 따른 증착속도와 표면형상의 변화를 관찰하였다. 증착속도는 증착온도가 높아짐에 따라 처음에는 증가하다가 최대값을 나타낸 후 감소하는 경향을 나타냈으며, 그레인의 크기는 증착온도가 높아짐에 따라 작아지는 경향을 보였다. 한편, 반응기체의 입력비가 20$\leq$NH$_3$/SiH$_4$$\leq$40인 조건에서는 증착속도의 변화나 표면형상의 변화를 관찰할 수 없었다. 증착온도 800~130$0^{\circ}C$ 범위에서 증착된 Si$_3$N$_4$가 비정질상인 것을 XRD로 확인할 수 있었으며 130$0^{\circ}C$, 질소 분위기에서 2시간 동안 열처리하여 결정상인 Si$_3$N$_4$를 인을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.105-105
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• 2012

We have developed a photoemission-assisted plasma-enhanced chemical vapor deposition (PAPE-CVD) [1,2], in which photoelectrons emitting from the substrate surface irradiated with UV light ($h{\nu}$=7.2 eV) from a Xe excimer lamp are utilized as a trigger for generating DC discharge plasma as depicted in Fig. 1. As a result, photoemission-assisted plasma can appear just above the substrate surface with a limited interval between the substrate and the electrode (~10 mm), enabling us to suppress effectively the unintended deposition of soot on the chamber walls, to increase the deposition rate, and to decrease drastically the electric power consumption. In case of the deposition of DLC gate insulator films for the top-gate graphene channel FET, plasma discharge power is reduced down to as low as 0.01W, giving rise to decrease significantly the plasma-induced damage on the graphene channel [3]. In addition, DLC thickness can be precisely controlled in an atomic scale and dielectric constant is also changed from low ${\kappa}$ for the passivation layer to high ${\kappa}$ for the gate insulator. On the other hand, negative electron affinity (NEA) of a hydrogen-terminated diamond surface is attractive and of practical importance for PAPECVD, because the diamond surface under PAPE-CVD with H2-diluted (about 1%) CH4 gas is exposed to a lot of hydrogen radicals and therefore can perform as a high-efficiency electron emitter due to NEA. In fact, we observed a large change of discharge current between with and without hydrogen termination. It is noted that photoelectrons are emitted from the SiO2 (350 nm)/Si interface with 7.2-eV UV light, making it possible to grow few-layer graphene on the thick SiO2 surface with no transition layer of amorphous carbon by means of PAPE-CVD without any metal catalyst.

• 한국재료학회지
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• 제20권4호
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• pp.204-209
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• 2010

Recent high efficiency electronic devices have been found to have heat emission problems. As for LEDs, an excessive increase in the device temperature causes a drop of the luminous efficiency and circuit lifetime. Therefore, heat release in the limited space of such electronic parts is very important. This is a study of the possibility of using a coating of carbon materials as a solution for the thermal emission problem of electronic devices. Powdered carbon materials, cokes, carbon blacks, amorphous graphite, and natural flakes were coated with an organic binder on an aluminum sheet and the subsequent thermal emissivity was measured with an FT-IR spectrometer and was found to be in the range of $5{\sim}20\;{\mu}m$ at $50^{\circ}C$. The emissivity of the carbon materials coated on the aluminum sheet was shown to be over 0.8 and varied according to carbon type. The maximum thermal emissivity on the carbon black coated-aluminum surface was shown to be 0.877. The emissivity of the anodized aluminum sheets that were used as heat releasing materials of the electronic parts was reported to be in the range of 0.7~0.8. Therefore, the use of a coating of carbon material can be a potential solution that facillitates heat dissipation for electronic parts.