• Title/Summary/Keyword: amorphous and crystalline

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Effect of Oligosaccharide Addition on Gelatinization and Retrogradation of Backsulgies (올리고당 첨가가 백설기의 호화와 노화에 미치는 영향)

  • 유지나;김영아
    • Korean journal of food and cookery science
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    • v.17 no.2
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    • pp.156-164
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    • 2001
  • Four different oligosaccharides used to determine their effects on gelatinization and retrogradation of Backsulgies(BSG), Korean traditional rice cake, were cyclodextrin, isomaltooligosaccharide, fructooligosaccharide and maltotetrose, with 3 or 6%(w/w), based on the rice flour. From the Amylograph and blue value data, adding 6% cyclodextrin into the rice flour fastened the gelatinzation process, and delayed the retrogradation in stored BSG at 4$\^{C}$ for up to 3 days, probably due to its cyclic structure. Using rheometer, the hardness of freshly made BSG added with cyclodextrin was significantly lower than that of control BSG, and increased with storage time in all BSGs at refrigerated temperature. When using maltotetrose in rice flour, the hardness of BSG was also significantly low, but slightly higher than that of cyclodextrin. Hunter “L” value in BSG decreased with the addition of oligosaccharides, but the higher the level of oligosaccharide in BSG, the insignificant the Hunter “a”,“b” values of BSG. From the X-ray diffraction studies, the rice flour showed typical A pattern, and the crystallinities of all BSG gave amorphous V type. The highest peaks of X-ray patterns in BSG added with 6% cyclodextrin or maltotetrose were, however, lower than that of the control, meaning the less crystalline, retrograded starch in the former BSGs. Based on sensory evaluation, BSG added with all oligosacchrides were not significantly different in taste, flavor, chewiness, moistness and overall preferences, with slightly darker color with longer storage time, compared to the control BSG.

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Enhancing Electrical Properties of Sol-Gel Processed IGZO Thin-Film Transistors through Nitrogen Atmosphere Electron Beam Irradiation (질소분위기 전자빔 조사에 의한 졸-겔 IGZO 박막 트랜지스터의 전기적 특성 향상)

  • Jeeho Park;Young-Seok Song;Sukang Bae;Tae-Wook Kim
    • Journal of the Microelectronics and Packaging Society
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    • v.30 no.3
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    • pp.56-63
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    • 2023
  • In this paper, we studied the effect of electron beam irradiation on sol-gel indium-gallium-zinc oxide (IGZO) thin films under air and nitrogen atmosphere and carried out the electrical characterization of the s ol-gel IGZO thin film transistors (TFTs). To investigate the optical properties, crystalline structure and chemical state of the sol-gel IGZO thin films after electron beam irradiation, UV-Visible spectroscopy, X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) were carried out. The sol-gel IGZO thin films exhibited over 80% transmittance in the visible range. The XRD analysis confirmed the amorphous nature of the sol-gel IGZO films regardless of electron beam irradiation. When electron beam irradiation was conducted in a nitrogen (N2) atmosphere, we observed an increased proportion of peaks related to M-O bonding contributed to the improved quality of the thin films. Sol-gel IGZO TFTs subjected to electron beam exposure in a nitrogen atmosphere exhibited enhanced electrical characteristics in terms of on/off ratio and electron mobility. In addition, the electrical parameters of the transistor (on/off ratio, threshold voltage, electron mobility, subthreshold swing) remained relatively stable over time, indicating that the electron beam exposure process in a nitrogen atmosphere could enhance the reliability of IGZO-based thin-film transistors in the fabrication of sol-gel processed TFTs.

Phase Analysis and Magnetic Properties of $Fe_5Si_xB_{5-x}$ (x = 0, 1, 2, 3) Powders Prepared by Mechanical Alloying (기계적합금법으로 제조된 $Fe_5Si_xB_{5-x}$ (x = 0, 1, 2, 3) 분말의 상분석 및 자기적 특성)

  • Hwang, Yeon;Kim, Taek-Soo;Lee, Hyo-Sook
    • Journal of the Korean Magnetics Society
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    • v.7 no.6
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    • pp.293-298
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    • 1997
  • $Fe_5Si_Xb_{5-x}$ (x=0, 1, 2, 3) powders were prepared by mechanical alloying, and their phases and magnetic properties were investigated by using XRD, TEM, Mossbauer spectroscopy and VSM. Starting elements are incorporated into $\alpha$-Fe in the early stage of mechanical alloying, and the stable phases are formed as the milling proceeds. After the annealing at 80$0^{\circ}C$ for 2 hours, it is found that the FeB and $Fe_2B$ phases coexist for the $Fe_5B_5$(x=0) composition. By substituting Si for B, the formation of $Fe_2B$ phase is restricted and the $Fe_5SiB_2$, $Fe_2Si_{0.4}B_{0.6}$ and paramagnetic phase begin to appear. The FeB phase has wide range of hyperfine magnetic field because it is not fully crystallized on the annealing at 800 $^{\circ}C$. On the contrary, others have good crystalline phases and show well-defined hyperfine magnetic field. Magnetic saturation is highest for the $Fe_5B_5$ composition where the amount of the $Fe_2B$ phase in large.

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Study of Tungsten Nitride Diffusion Barrier for Various Nitrogen Gas Flow Rate by Employing Nano-Mechanical Analysis (Nano-Mechanics 분석을 통한 질화 텅스텐 확산방지막의 질소 유량에 따른 연구)

  • Kwon, Ku Eun;Kim, Sung Joon;Kim, Soo In;Lee, Chang Woo
    • Journal of the Korean Vacuum Society
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    • v.22 no.4
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    • pp.188-192
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    • 2013
  • Many studies have been conducted for preventing from diffusion between silicon wafer and metallic thin film due to a decrease of line-width and multi-layer thin film for miniaturization and high integration of semiconductor. This paper has focused on the nano-mechanical property of diffusion barrier which sample is prepared for various gas flow rate of nitrogen with tungsten (W) base from 2.5 to 10 sccm. The deposition rate, resistivity and crystallographic properties were measured by a ${\beta}$-ray back-scattering spectroscopy, 4-point probe and x-ray diffraction (XRD), respectively. We also has investigated the nano-mechanical property using the nano-indenter. As a result, the surface hardness of W-N thin film was increased rapidly from 10.07 to 15.55 GPa when the nitrogen gas flow was increased from 2.5 to 5 sccm. And the surface hardness of W-N thin film had 12.65 and 12.77 GPa at the nitrogen gas flow of 7.5 and 10 sccm respectively. These results were decreased by the comparison with the W-N thin film at nitrogen gas flow of 5 sccm. It was inferred that these severe changes were caused by the stoichiometric difference between the crystalline and amorphous state in W-N thin film. In addition, these results were caused by increased compressive stress.

Physicochemical and Organoleptic Properties of Starch Isolated from Gamma-Irradiated Acorn (감마선 조사 도토리로부터 분리한 전분의 이화학적 및 관능적 특성)

  • Kwon, Joong-Ho;Kim, Soo-Jin;Lee, Jung-Eun;Lee, Soo-Jeong;Kim, Sung-Kon;Kim, Jeong-Sook;Byun, Myung-Woo
    • Korean Journal of Food Science and Technology
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    • v.34 no.6
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    • pp.1007-1012
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    • 2002
  • Physicochemical and organoleptic properties were investigated in starch extracted from acorn gamma-irradiated for insect control. Hunter's color L, a, and b values were unchanged upon irradiation at 0.25 to 10 kGy. Scanning electron microscopic observation revealed no changes with gamma irradiation at 1 kGy, that is effective for disinifestation, whereas 10 kGy resulted in some clefts on the starch surface. X-ray diffraction analysis showed patterns of both amorphous and crystalline regions were not different among the treatment groups. Water-binding property, swelling power, solubility, and gelatinization patterns of starch were influenced by irradiation dose, but 1 kGy dose was not detrimental to the physicochemical properties. Textural parameters of acorn gel were relatively stable, but significant reductions were found in hardness, adhesiveness, and chewiness in samples irradiated at 3 kGy or higher. Rrsults revealed that irradiation at 1 kGy or lower could be applied for insect control without causing apparent changes in physicochemical and organoleptic properties of acorn starch.

Analysis of microstructure for glass-ceramics made of silicate glasses containing EAF dust (제강분진이 첨가된 규산염계 결정화유리의 미세구조 분석)

  • Kim, H.S.;Kang, S.G.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.16 no.5
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    • pp.227-234
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    • 2006
  • Microstructures of free surface and interior of glass-ceramics obtained by heat treating silicate glass specimen containing electric arc furnace dust(EAF dust) were observed. The crystallization temperature, $T_c$ of glassy specimen was measured around $850^{\circ}C$ from the result of different thermal analysis so heat treatment temperature to obtain glass-ceramic specimen was selected as $950^{\circ}C$ for 1 hr. Glass specimens containing 50 wt% dust were amorphous, while glass specimens containing 70 wt% dust showed spinel crystal peaks in XRD results. In case of glass-ceramic specimens, spinel crystalline phase was appeared with willemite, and willemite crystal peak intensity increased with increasing dust contents. The fractured surface of glass specimens containing 50 wt% dust was smooth like mirror surface, but that containing 70 wt% dust showed spinel crystals of 10 ${\mu}m$ size in glass matrix. In case of glass-ceramic specimens, ZnO crystal particles of $2{\sim}5{\mu}m$ size were produced in free surface and glassy phase, spinel and willemite crystal phases existed in interior. There were no crystals in glasses containing 50 wt% dust, while glass containing 70 wt% dust had 14 vol% crystals. Crystallinity of glass-ceramic specimens containing 50 and 70 wt% dust were 19 and 43%, respectively. When microstructures of glass and glass-ceramic specimens were observed through SEM after TCLP experiment, glass specimens showed flaking phenomenon while glass-ceramic specimens showed a slight corrosion evidence without any cracks.

The Effect of Submergence on Phosphorus Adsorption Characteristics in Soils II. Phosphorus Adsorption and Fractions of Inorganic Phosphorus (담수처리(湛水處理)가 토양(土壤)의 인산(燐酸) 흡착(吸着) 특성(特性)에 미치는 영향(影響) II. 인산흡착(燐酸吸着)과 무기태(無機態) 인산(燐酸) 분획(分劃))

  • Kim, Chan-Sub;Yoo, Sun-Ho
    • Korean Journal of Soil Science and Fertilizer
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    • v.24 no.4
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    • pp.248-253
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    • 1991
  • This study examines the effect of submergence on transformations of inorganic phosphorus and the relation between fractions of inorganic phosphorus and adsorbed phosphorus in Gangseo (paddy soil), Yesan (non-cultivated soil), and Jungdong soil (upland soil). The soils were submerged with glucose sol'n at $28^{\circ}C$ for 17 days. After, the soils were incubated with phosphate solution at $25^{\circ}C$ for 24 hours. The seguential fractionation of inorganic phosphorus and of iron were conducted to investigate transformations of them. Results obtained are as follows; 1. By submergence, Bray I-P were decreased from 53mgP/kg to 48mgP/kg in Gangseo, from 3mgP/kg to 1mgP/kg in Yesan, and from 120mgP/kg to 56mgP/kg in Jungdong soil. 2. $NH_4F$ extractable P was dominant fraction of adsorbed P. It was transformed into NaOH extractable P by submergence in Jungdong soil. 3. Dithionite-citrate-bicarbonate extractable iron (crystalline Fe) was transformed to oxalate extractable iron (amorphous Fe) by submergence in Yesan soil.

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A Study on the Magnetic Properties of the Co-Ni-P thin Plate by Electroless Plating (무전해도금법에 의한 Co-Ni-P 박막의 자기적특성에 관한 연구)

  • Kim, C.W.;Lee, C.;Yoon, S.R.;Joung, I.
    • Korean Journal of Materials Research
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    • v.5 no.8
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    • pp.1013-1019
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    • 1995
  • The thin plate of Co-Ni-P was deposited on the polyester film by the electroless plating method. Through present experiments, deposition rates and metal compositions of the plates were determined according to compositions of solution, pH and temperature. Also, magnetic properties of plates were examined according to metal compositions. Considering magnetic properties and deposition rates of electroless plating, the best condition was obtained as pH of 8.5 and 90℃. It was observed that metal compositions were evidently varied by the pH of solutions and the concentration of complex agents. However. they were not affected by other factors. At the optimum condition, the composition of the plate was Co(78%), Ni(16%), and P(6%). Also, it was found that the coercive force was 370 Oe, and squareness was 0.65 at this condition. Magnetic properties (hard or soft) of thin plates were determined by metal compositions. Therefore. the plate became soft magnetic plate as the composition of nickel increased over 30 per cents. The crystal structure of the soft magnetic plate was found to be amorphous in which it was strongly oriented to the (111)phahe of nickel. On the ohter hand, the hard magnetic place was found to be hcp crystalline of α-cobalt which was oriented to the (101)phase of cobalt and the (100)phase of cobalt.

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Characteristics of metal-induced crystallization (MIC) through a micron-sized hole in a glass/Al/$SiO_2$/a-Si structure (Glass/Al/$SiO_2$/a-Si 구조에서 마이크론 크기의 구멍을 통한 금속유도 실리콘 결정화 특성)

  • Oh, Kwang H.;Jeong, Hyejeong;Chi, Eun-Ok;Kim, Ji Chan;Boo, Seongjae
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.59.1-59.1
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    • 2010
  • Aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) is studied with the structure of a glass/Al/$SiO_2$/a-Si, in which the $SiO_2$ layer has micron-sized laser holes in the stack. An oxide layer between aluminum and a-Si thin films plays a significant role in the metal-induced crystallization (MIC) process determining the properties such as grain size and preferential orientation. In our case, the crystallization of a-Si is carried out only through the key hole because the $SiO_2$ layer is substantially thick enough to prevent a-Si from contacting aluminum. The crystal growth is successfully realized toward the only vertical direction, resulting a crystalline silicon grain with a size of $3{\sim}4{\mu}m$ under the hole. Lateral growth seems to be not occurred. For the AIC experiment, the glass/Al/$SiO_2$/a-Si stacks were prepared where an Al layer was deposited on glass substrate by DC sputter, $SiO_2$ and a-Si films by PECVD method, respectively. Prior to the a-Si deposition, a $30{\times}30$ micron-sized hole array with a diameter of $1{\sim}2{\mu}m$ was fabricated utilizing the femtosecond laser pulses to induce the AIC process through the key holes and the prepared workpieces were annealed in a thermal chamber for 2 hours. After heat treatment, the surface morphology, grain size, and crystal orientation of the polycrystalline silicon (pc-Si) film were evaluated by scanning electron microscope, transmission electron microscope, and energy dispersive spectrometer. In conclusion, we observed that the vertical crystal growth was occurred in the case of the crystallization of a-Si with aluminum by the MIC process in a small area. The pc-Si grain grew under the key hole up to a size of $3{\sim}4{\mu}m$ with the workpiece.

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Fabrication and Characterization of Si Quantum Dots in a Superlattice by Si/C Co-Sputtering (실리콘과 탄소 동시 스퍼터링에 의한 실리콘 양자점 초격자 박막 제조 및 특성 분석)

  • Kim, Hyun-Jong;Moon, Ji-Hyun;Cho, Jun-Sik;Park, Sang-Hyun;Yoon, Kyung-Hoon;Song, Jin-Soo;O, Byung-Sung;Lee, Jeong-Chul
    • Korean Journal of Materials Research
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    • v.20 no.6
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    • pp.289-293
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    • 2010
  • Silicon quantum dots (Si QDs) in a superlattice for high efficiency tandem solar cells were fabricated by magnetron rf sputtering and their characteristics were investigated. SiC/$Si_{1-x}C_x$ superlattices were deposited by co-sputtering of Si and C targets and annealed at $1000^{\circ}C$ for 20 minutes in a nitrogen atmosphere. The Si QDs in Si-rich layers were verified by transmission electron microscopy (TEM) and X-ray diffraction. The size of the QDs was observed to be 3-6 nm through high resolution TEM. Some crystal Si and -SiC peaks were clearly observed in the grazing incident X-ray diffractogram. Raman spectroscopy in the annealed sample showed a sharp peak at $516\;cm^{-1}$ which is an indication of Si QDs. Based on the Raman shift the size of the QD was estimated to be 4-6 nm. The volume fraction of Si crystals was calculated to be about 33%. The change of the FT-IR absorption spectrum from a Gaussian shape to a Lorentzian shape also confirmed the phase transition from an amorphous phase before annealing to a crystalline phase after annealing. The optical absorption coefficient also decreased, but the optical band gap increased from 1.5 eV to 2.1 eV after annealing. Therefore, it is expected that the optical energy gap of the QDs can be controlled with growth and annealing conditions.