• 방사성폐기물학회지
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• 제19권3호
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• pp.339-352
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• 2021

Legacy waste from the decommissioned A-1 nuclear power plant in the Slovak Republic is scheduled for immobilisation within a tailored alkali borosilicate glass formulation, as part of ongoing site cleanup. The aqueous durability and characterisation of a simulant glass wasteform for Chrompik III legacy waste, was investigated, including dissolution experiments up to 112 days (90℃, ASTM Type 1 water). The wasteform was an amorphous, light green glassy product, with no observed phase separation or crystalline inclusions. Aqueous leach testing revealed a suitably durable product over the timescale investigated, comparing positively to other simulant nuclear waste glasses and vitreous products tested under similar conditions. Iron and titanium rich precipitates were observed to form at the surface of monolithic samples during leaching, with the formation of an alkali deficient alteration layer behind these at later ages. Overall this glass appears to perform well, and in line with expectations for this chemistry, although longer-term testing would be required to predict overall durability. This work will contribute to developing confidence in the disposability of vitrified Chrompik legacy wastes.

• 반도체디스플레이기술학회지
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• 제20권1호
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• pp.1-6
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• 2021

We have investigated the effect of the substrate temperature and hydrogen flow rate on the characteristics of AZO thin films for the TCO (transparent conducting oxide). For this purpose, AZO thin films were deposited by RF magnetron sputtering at room temperature and 300℃ with various H2 flow rate. Experiments were carried out while varying the hydrogen gas flow rate from 0sccm to 5.0sccm in order to see how the hydrogen gas affects the AZO thin films. AZO thin films deposited at 300℃ showed amorphous structure, whereas IZO thin films deposited at room temperature showed crystalline structure having an (222) preferential orientation. The electrical resistivity of the AZO films deposited at 300℃ was 4.388×10-3Ωcm, the lowest value. As the hydrogen gas flow rate increased, the resistivity tended to decrease.

• 한국수소및신에너지학회논문집
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• 제33권5호
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• pp.566-573
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• 2022

In this study, the mechanical properties of the polymer electrolyte membrane according to the temperature were studied. The test specimens of polymer electrolyte membrane were heat treated at 40℃, 60℃, 80℃, 100℃, and 120℃, and then the tensile tests were performed. As results of this study, the residual stress of the polymer electrolyte membrane was removes by the heat treatment and the elastic modulus decreased due to the decrease in internal energy. In addition, in the plastic region, the mechanical properties and crystallization rate of the polymer electrolyte membrane increased in proportion according to increase of the heat treatment temperature.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.72.1-72.1
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• 2010

Thin film a-Si solar cells deposited by PECVD have many advantages compared to the traditional crystalline Si solar cells. They do not require expensive Si wafer, the process temperature is relatively low, possibility of scaling up for mass production, etc. In order to produce thin film solar cells, understanding the relationship between the material characteristics and deposition conditions is important. It has been reported by many groups that the band gap of the a-Si material and the deposition rate has an linear relationship, when RF power is used to control both. However, when the process pressure is changed in order to control the deposition rate and the band gap, a diversion from the well known linear relationship occurs. Here, we explain this diversion by the deposition condition crossing different plasma regions in the Paschen curve with a simple model. This model will become a guide to which condition a-Si thin films must be fabricated in order to get a high quality film.

• 한국세라믹학회지
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• 제23권2호
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• pp.21-30
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• 1986

Pure submicron $SrTiO_3$ powders had been synthesized with chemical wet process that $5N-NH_4OH$ solution was sprayed into the mixed solution of $SrTiO_3$, $TiCl_4$ and $H_2O_2$ with $N_2$ carrier gas. The characteristic properties of powders obtained from this experiment were as follows. The optimum synthesis condition in reaction bath was above PH 8.5 and under $25^{\circ}C$ The particle size of precipitated SrTiO(OH) powders dried at 6$0^{\circ}C$ was under 0.01${\mu}{\textrm}{m}$ and uniform. Amorphous precipitated complex powders emitted adsorbed water at 15$0^{\circ}C$ less that and crystalline $SrTiO_3$powders was produced from calcining the complex at 30$0^{\circ}C$. Sintered body of SrTiO3 fired at 133$0^{\circ}C$ showed that relative dielectric constant was 228 at 1MHZ and bulk density was 4.73g/$cm^3$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.282-282
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• 2011

Low power consuming operation of phase-change random access memory (PRAM) can be achieved by confining the switching volume of phase change media into nanometer scale. Ge2Sb2Te5 (GST) is one of the best materials for the phase change random access memory (PRAM) because the GST has two stable states, namely, high and low resistance values, which correspond to the amorphous and crystalline phases of GST, respectively. However, achieving the fast operation speed at lower current requires an alternative chalcogenide material to replace the GST and shrinking the dimension of programmable volume. In this paper, we have fabricated nanoscale contact area on Ge2Sb2Te5 thin films with trimming process. The GST material was fabricated by melt quenching method and the GST thin films were deposited with thickness of 100 nm by the electron beam evaporation system. As a result, the reset current can be safely scaled down by reducing the device contact area and we could confirmed the phase-change characteristics by applying voltage pulses.

• 한국전기전자재료학회논문지
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• 제18권11호
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• pp.1001-1006
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• 2005

A new fabrication method is proposed to form the stacked polysilicon gate by nitridation in $N_2$ atmosphere using conventional LP-CVD system. Two step stacked layers with an amorphous layer on top of a polycrystalline layer as well as three step stacked layers with polycrystalline films were fabricated using the proposed method. SIMS profile showed that the proposed method would successfully create the nitrogen-rich layers between the stacked polysilicon layers, thus resulting in effective retardation of dopant diffusion. It was observed that the dopants in stacked films were piled-up at the interface. TEM image also showed clear distinction of stacked layers, their plane grain size and grain mismatch at interface layers. Therefore, the number of stacked polysilicon layers with different crystalline structures, interface position and crystal phase can be easily controlled to improve the device performance and reliability without any negative effects in nano-scale CMOSFETs.

• Bulletin of the Korean Chemical Society
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• 제31권6호
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• pp.1506-1508
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• 2010

$LiMnBO_3$ was successfully synthesized by a solid-state reaction method both with and without a carbon coating. Adipic acid was used as source material for the carbon coating. $LiMnBO_3$ was composed of many small polycrystalline particles with a size of about 50 - 70 nm, which showed a very even particle morphology and highly ordered crystalline particulates. Whereas the carbon coated $LiMnBO_3$ was well covered by mat-like, fine material consisting of amorphous carbon derived from the carbonization of adipic acid during the synthetic process. Carbon coated cell exhibited improved and stable discharge capacity profile over the untreated. Two cells delivered an initial discharge capacity of 111 and 58 mAh/g for $LiMnBO_3$/C and $LiMnBO_3$, respectively. Carbon coating on the surface of the $LiMnBO_3$ drastically improved discharge capacity due to the improved electric conductivity in the $LiMnBO_3$ material.

• 한국재료학회지
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• 제19권4호
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• pp.203-206
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• 2009

$Sn_XSe_{100-X}$ (15|X|30) alloys have been studied to explore their suitability as phase change materials for nonvolatile memory applications. The phase change characteristics of thin films prepared by a Radio Frequency (RF) magnetron co-sputtering system were analyzed by an X-ray diffractometer and 4-point probe measurement. A phase change static tester was also used to determine their crystallization under the pulsed laser irradiation. X-ray diffraction measurements show that the transition in sheet resistance is accompanied by crystallization. The amorphous state showed sheet resistances five orders of magnitude higher than that of the crystalline state in $Sn_XSe_{100-X}$ (x = 15, 20, 25, 30) films. In the optimum composition, the minimum time of $Sn_XSe_{100-X}$ alloys for crystallization was 160, 140, 150, and 30ns at 15mW, respectively. The crystallization temperature and the minimum time for crystallization of thin films were increased by increasing the amount of Sn, which is correlated with the activation energy for crystallization.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.21-24
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• 1997

Ferroeletric LiNbO$_3$ thin films hale been prepared directly on Si(100) substrates by conventional RF magnetron spurttering system for nonvolatile memory applications. As-deposited films were performed RTA(Rapid Thermal Annealing) treatment in an oxygen atmosphere at 600 $^{\circ}C$ for 60 s. The rapid thermal annealed films were changed to poly-crystalline ferroelectric nature from amorphous of as-deposition. The resistivity of the ferroelectric LiNbO$_3$ film was increased from a typical vague of 1~2$\times$10$^{8}$ $\Omega$.cm before the annealing to about 1$\times$10$^{13}$ $\Omega$.cm at 500 kV/cm and reduce the interface state density of the LiNbO$_3$/Si(100) interface to about 1$\times$10$^{11}$ cm$^2$ . eV. Ferroelectric hysteresis measurements using a Sawyer-Tower circuit yielded remanent polarization (Pr) and coercive field (Ec) values of about 1.2 $\mu$C/cm$^2$ and 120 kV/cm, respectively.