• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.340-343
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser hem: hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. This letters researched into the characteristic of phase change transition in differential Chalcogenide thin films materials. The electrode used Al and experimented on 100nm, 300nm, 500nm respectively.

• Journal of the Korean Ceramic Society
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• v.23 no.6
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• pp.71-75
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• 1986

The forming reaction processes of magnesium aluminate spinel by a thermal decomposition of sulfate hydrate were studied with DTA, TG. SEM and X-ray powder diffraction methods. The hydrous salt composed of the mixture of the two compounds of $MgSO_4$ $6H_2O$ and ${AL_2}({SO_4})_17H_2O_3$ in which both sulfates were crystalline. On heating the hydrous slat the crystalline magnesium and aluminum sulfate anhydride to amorphous alumina magnesium sulfate anhydride decomposed to amorphous magnesia and these amorphous oxides reacted completely each other to form a spinel at $1000^{\circ}C$ The apparent activation energy of forming reaction of spinel was 36.5 kcal/mole($900^{\circ}C$~$1000^{\circ}C$) The crystallite size of spinel obtained at $1000^{\circ}C$ after 1 h was 380$\AA$.

• Transactions on Electrical and Electronic Materials
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• v.5 no.6
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• pp.241-243
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can be controlled by electrical or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. In this letter, the characteristics of phase transition in differential chalcogenide thin film are investigated. Al was used for the electrode as the thickness of 100, 300, 500 nm, respectively.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.05a
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• pp.236-240
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• 2007

In order to control the microstructure of amorphous/crystalline composites, gas atomized $Cu_{54}Ni_{6}Zr_{22}Ti_{18}$ metallic glass powders wrapped in a crystalline brass were extruded repeatedly. The size of microstructure in the resultant composites was varied depending on the pass of extrusion as well as on the area reduction ratio. The microstructure could be estimated using an equation of $r_n=r_{n-1}/R^{1/2}$, where R is reduction ratio and $r_n$ is the resultant radius of the extruded bar after n pass. Theory of microstructural refinement as well as the relationship between the resultant microstructures and mechanical properties was discussed.

• Carbon letters
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• v.27
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• pp.18-25
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• 2018

In this study, graphene oxide(GO) was used as drug carriers to amorphize poorly watersoluble drugs via a co-spray drying process. Two poorly water-soluble drugs, fenofibrate and ibuprofen, were investigated. It was found that the drug molecules could be in the graphene nanosheets in amorphous or nano crystalline forms and thus have a significantly enhanced dissolution rate compared with the counterpart crystalline form. In addition, the dissolution of the amorphous drug enwrapped with the graphene oxide was higher than that of the amorphous drug in activated carbon (AC) even though the AC possessed a larger specific surface area than that of the graphene oxide. The amorphous formulations also remained stable under accelerated storage conditions ($40^{\circ}C$ and 75% relative humidity) for a study period of 14 months. Therefore, graphene oxide could be a potential drug carrier and amorphization agent for poorly water-soluble drugs to enhance their bioavailability.

• Fibers and Polymers
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• v.3 no.1
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• pp.18-23
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• 2002

The structure development and dynamic properties of fibers produced by high-speed spinning of P(EN-ET) random copolymers were investigated. The as-spun fibers were found to remain amorphous up to the spinning speed of 1500 m/min, and subsequent increases in speed resulted in the crystalline domains containing primarily $\alpha$ crystalline modification of PEN. The f modification was not found up to spinning speeds of 4500 m/min. On the other hand, annealing of constrained fibers spun at the 2100 m/min at 180,200, and 240^{\circ}C$ exhibited $\beta$-form crystalline structure, while the annealed fibers spun in 600-1500 m/min range exhibited dominantly $\alpha$-form. However $\beta$-form crystals disappeared above the spinning speed of 3000 m/min. With increasing spinning speeds from 600 to 4500 m/min, the storage modulus of as-spun fibers increased continuously and reached a value of about 10.4 spa at room temperature. The tan $\delta$curves showed the $\alpha$-relaxation peak at about 155-165^{\circ}C$, which is considered to correspond to the glass transition. The $\alpha$-relaxation peaks became smaller and broader, and shift to higher temperatures as the spinning speed increases, meaning that molecular mobility in the amorphous region is restricted by increased crystalline domain.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.151-154
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• 1998

The layered trivanadate, LiV$_3$O$_{8}$ has been investigated as a cathode material for secondary lithium batteries. Early in its development the preparation method of LiV$_3$O$_{8}$ strongly influenced its electrochemical properties, such as discharge capacity, rate capability and cycling efficiency. In the present experiment, a new synthesis route has been applied to obtain LiV$_3$O$_{8}$ . Instead of the conventional high temperature technique leading to the crystalline form, a solution technique producing the amorphous form has been used. This material, after dehydration, shows an electrochemical performance exeeding that of the crystalline one. The rationale for this behavior mainly lies in microscopic factors, i.e., in the possibility for the unit cell of amorphous LiV$_3$O$_{8}$ to insert up to 9 Li$^{+}$, instead of six for crystalline LiV$_3$O$_{8}$ . The ultrasonically treated products in water were characterized by XRD, TGA, DSC, and SEM. These measurements showed that the ultrasonic treatment process of crystalline LiV$_3$O$_{8}$ causes a decrease in crystallinity and considerable increases in specific surface area and interlayer spacing.g.

• Journal of Welding and Joining
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• v.17 no.4
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• pp.53-59
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• 1999

Amorphous alloys have also been called glassy alloys or non-crystalline alloys. They are made by the rapid solidification. The solidification occurs so rapid that the atoms are frozen in their liquid configuration. There are unique magnetic, mechanical, electrical and corrosive behaviors which result form their amorphous structure. In the study. amorphous coatings were manufactured with Ni-Cr-B-Si powders by flame spray. Measurement of hardness, were resistance, corrosion resistance and observation of microstructures and XRD, DSC were performed to investigate characteristics of amorphous coatings. The experimental results obtained as follow: 1) Amorphous powders could not be manufactured with the spraying in the spraying in the liquid nitrogen. But, amorphous coatings could be manufactured with the rotation cooling method by liquid nitrogen. In the fabrication of amorphous coatings, major factor was the rapid cooling by rotation of the substrate. 2) Hardness of coatings was obtained Hv 960 by formation of amorphous phase. But, wear resistance decreased. That was due to porosity in the coatings by the rapid cooling. 3) In the case of corrosion resistance, amorphous coatings were superior to air-cooled coatings. That was due to formation of amorphous phase. 4) After amorphous coatings were heat-treated at 520℃ for 1hr. hardness increased 80% and wear resistance increased 30% comparing with air cooled coatings. These were due to crystallization of amorphous phase and decrease of porosity by heat-treatment.

• Corrosion Science and Technology
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• v.18 no.5
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• pp.206-211
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• 2019

Silicon carbide (SiC) thin films become superhard when they have microstructures of nanocolumnar crystalline grains (NCCG) with an intergranular amorphous SiC matrix. We investigated the role of ion bombardment and deposition temperature in forming the NCCG in SiC thin films. A direct-current (DC) unbalanced magnetron sputtering method was used with pure Ar as sputtering gas to deposit the SiC thin films at fixed target power of 200 W and chamber pressure of 0.4 Pa. The Ar ion bombardment of the deposited films was conducted by applying a negative DC bias voltage 0-100 V to the substrate during deposition. The deposition temperature was varied between room temperature and $450^{\circ}C$. Above a critical bias voltage of -80 V, the NCCG formed, whereas, below it, the SiC films were amorphous. Additionally, a minimum thermal energy (corresponding to a deposition temperature of $450^{\circ}C$ in this study) was required for the NCCG formation. Transmission electron microscopy, Raman spectroscopy, and glancing angle X-ray diffraction analysis (GAXRD) were conducted to probe the samples' structural characteristics. Of those methods, Raman spectroscopy was a particularly efficient non-destructive tool to analyze the formation of the SiC NCCG in the film, whereas GAXRD was insufficiently sensitive.

• Journal of Korean Ophthalmic Optics Society
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• v.13 no.3
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• pp.73-77
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• 2008

Purpose: This research is that prepare amorphous or crystalline ZnO thin films with pure strong UV emission on soda-lime-silica glass (SLSG) substrates by low-temperature annealing. Methods: Growth characteristic and optical properties of the amorphous or nano-crystalline ZnO thin films prepared on soda - lime - silica glass substrates by chemical solution deposition at 100, 150, 200, 250 and $300^{\circ}C$ were investigated using X-ray diffraction analysis, ultraviolet - visible - near infrared spectrophotometer, and photoluminescence. Results: The films exhibited an amorphous pattern even when finally annealed at $100^{\circ}C{\sim}200^{\circ}C$ for 60 min, while crystalline ZnO was obtained by prefiring at 250 and $300^{\circ}C$. The photoluminescence spectrum of amorphous ZnO films shows a strong NBE emission, while the visible emission is nearly quenched. Conclusions: These results indicate it should be possible to cheaply and easily fabricate ZnO-based optoelectronic devices at low temperature, below $200^{\circ}C$, in the future.