• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.77-80
• /
• 2001

Crystallographic and magnetic characteristics of CoCr-based magnetic thin film for perpendicular magnetic recording media were influenced on preparing conditions. In these, there is that substrate temperature was parameter that increases perpendicular coercivity of CoCrTa magnetic layer using recording layer. While preparation of CoCr-based doublelayer, by optimizing substrate temperature, we expect to increase perpendicular anisotropy of CoCr magnetic layer and prepare ferromagnetic recording layer with a good quality by epitaxial growth. CoCrTa/Si doublelayer showed a good dispersion angle of c-axis orientation $\Delta$$\theta$$_{50}$ caused by inserting amorphous Si underlayer which prepared at underlayer substrate temperature 250C. Perpendicular coercivity was constant, in-plane coercivity was controlled a low value about 2000e. This result implied that Si underlayer could restrain growth of initial layer of CoCrTa thin film, which showed bad magnetic properties effectively without participating magnetization patterns of magnetic layer. In case of CoCrTa/Si that prepared with ultra thin underlayer, crystalline orientation of CoCrTa was improved rather underlayer thickness 1nm, it was expected that amorphous Si layer played a important role in not only underlayer but also seed layer.t also seed layer.r.

• Journal of Sericultural and Entomological Science
• /
• v.39 no.2
• /
• pp.186-196
• /
• 1997

The IR crystallinity index of Calcium nitrate treated silk fiber decreased proportionally to the concentration of calcium nitrate. A partial change of conformation was observed in the concentration of over 46.4-47.6% changing from $\beta$-sheet or to random coil in the crystalline region. This is in coincidence with the result of crystallinity index, which was started to be reduced in the concentration range of 46.4-47.6%. A same trend was observed for the X-ray order factor, birefringence, degree of orientation and surface structure. These structural parameters were remarkably changed on the treatment of silk fibers with concentration of 46.4-17, 6% calcium nitrate. Therefore, it seems that there exists a critical concentration of calcium nitrate in affection the structure and morphology of silk fibers. According to the examination of surface morphology, the fine stripe was observed in the direction of fiber axis at 46.4% concentration. However, the treated concentration was exceeded by 47.6%, the cracks were appeared severely on the fiber surface in the transverse direction as well as fiber axis direction. This result might be related to the tensile properties, specially a tenacity of silk fibers. As a result of quantitative analysis of a dilute acid hydrolysis, three different regions, which are known as a amorphous, semi-crystalline and crystalline region, could be obtained. The hydrolysis rate curves were different with various concentrations of treatment and the relative contents of each region could be calculated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.11a
• /
• pp.29-32
• /
• 1998

A new treatment of LiV$_3$O$_{8}$ has beer proposed for improving its electrochemical behavior as a cathode material secondary lithium batteries. Early in its development, the preparation method of LiV$_3$O$_{8}$ strongly influenced its electrochemical properties, such as discharge capacity, rate capability and cycling efficiency. In the present experiment, a new synthesis route has been applied to obtain LiV$_3$O$_{8}$ . Instead of the conventional high temperature technique leading to the crystalline form, a solution technique producing the amorphous form has been used. This material, after dehydration, shows an electrochemical performance exceeding that of the crystalline one. These measurements showed that the ultrasonic treatment process of crystalline LiV$_3$O$_{8}$ causes a decrease in crystallinity and considerable increases in specific surface area and interlayer spacing. So the ultrasonic method provides a convenient means for improving the electrochemical behavior of LiV$_3$O$_{8}$ as a cathode material for secondary lithium batteries.batteries.

• Korean Journal of Materials Research
• /
• v.17 no.11
• /
• pp.574-579
• /
• 2007

Amorphous $BaTi_4O_9$ ($BT_4$) film was deposited on Pt/Si substrate by RF magnetron sputter and their dielectric properties and electrical properties are investigated. A cross sectional SEM image and AFM image of the surface of the amorphous $BT_4$ film deposited at room temperature showed the film was grown well on the substrate. The amorphous $BT_4$ film had a large dielectric constant of 32, which is similar to that of the crystalline $BT_4$ film. The leakage current density of the $BT_4$ film was low and a Poole-Frenkel emission was suggested as the leakage current mechanism. A positive quadratic voltage coefficient of capacitance (VCC) was obtained for the $BT_4$ film with a thickness of <70 nm and it could be due to the free carrier relaxation. However, a negative quadratic VCC was obtained for the films with a thickness ${\geq}96nm$, possibly due to the dipolar relaxation. The 55 nm-thick $BT_4$ film had a high capacitance density of $5.1fF/{\mu}m^2$ with a low leakage current density of $11.6nA/cm^2$ at 2 V. Its quadratic and linear VCCs were $244ppm/V^2$ and -52 ppm/V, respectively, with a low temperature coefficient of capacitance of $961ppm/^{\circ}C$ at 100 kHz. These results confirmed the potential suitability of the amorphous $BT_4$ film for use as a high performance metal-insulator-metal (MIM) capacitor.

• Journal of the Korean Ceramic Society
• /
• v.53 no.3
• /
• pp.295-300
• /
• 2016

To investigate the thermal conductivity and the structural properties of naturally cooled excimer-laser annealed Si, molecular-dynamics (MD) simulations have been performed. The thermal conductivity of crystalline Si (c-Si) was measured by direct method at 1000 K. Steady-state heat flow was measured using a stationary temperature profile; significant deviations from Fourier's law were not observed. Reliable processes for measuring the thermal conductivity of c-Si were presented. A natural cooling process to admit heat flow from molten Si (l-Si) to c-Si was performed using an MD cell with a size of $48.9{\times}48.9{\times}97.8{\AA}^3$. During the cooling process, the temperature of the bottom $10{\AA}$ of the MD cell was controlled at 300 K. The results suggest that the natural cooling system described the static structural property of amorphous Si (a-Si) well.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.11a
• /
• pp.46.1-46.1
• /
• 2010

Surface passivation of crystalline silicon(c-Si) surface with a-Si:H thin films has been investigated by using quasi-steady-state photo conductance(QSSPC) measurements. Analyzing the influence of a-Si:H film thickness, process gas ratio, deposition temperature and post annealing temperature on the passivation properties of c-Si, we optimized the passivation conditions at the substrate temperature of $200-250^{\circ}C$. Best surface passivation has been obtained by post-deposition annealing of a-Si:H film layer. Post annealing around the deposition temperature was sufficient to improve the surface passivation for silicon substrates. We obtained effective carrier lifetimes above 5.5 ms on average.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1989.06a
• /
• pp.111-113
• /
• 1989

This paper reports the optical characteristics of TeS$_{5}$ Ge$_{5}$ thin film. In phase diagram, TeS$_{5}$ Ge$_{5}$ has the eutetic point with the loweat melting point. Therfore, TeS$_{5}$ Ge$_{5}$ thin film will be melted by Diode Laser with low energy. TeS$_{5}$ Ge$_{5}$ thin films start to change the phase from amorphous to crystalline near 10$0^{\circ}C$, but perfectly change the phase at 28$0^{\circ}C$. As-deposit TeS$_{5}$ Ge$_{5}$ thin film start to change the phase to crystalline in enviroment og 66$^{\circ}C$ 80%RH.circ}C$ 80%RH.

• Journal of the Korean Magnetics Society
• /
• v.16 no.3
• /
• pp.186-191
• /
• 2006

Ferromagnetic amorphous $Ni_{16}Fe_{62}Si_8B_{14}$ and $Co_{70.5}Fe_{4.5}Si_{15}B_{10}$ layers have been devised and incorporated as free layers of magnetic tunnel junctions (MTJs) to improve MRAM reading and writing performance. The NiFeSiB and CoFeSiB single-layer film exhibited a lower saturation magnetization ($Ms=800emu/cm^3,\;and\;560emu/cm^3$, respectively) compared to that of a $Co_{90}Fe_{10}(Ms=1400emu/cm^3)$. Because amorphous ferromagnetic materials have lower Ms than crystalline ones, the MTJs incorporating amorphous ferromagnetic materials offer lower switching field ($H_{sw}$) values than that of the traditional CoFe-based MTJ. The double-barrier MTJ with an amorphous NiFeSiB free layer offered smooth surface resulting in low bias voltage dependence, and high $V_h\;and\;V_{bd}$ compared with the values of the traditional CoFe-based MTJ.

• Korean Journal of Metals and Materials
• /
• v.48 no.12
• /
• pp.1047-1055
• /
• 2010

The objective of this study is to investigate the ballistic properties of Zr-based amorphous alloy surface composites fabricated by high-energy electron-beam irradiation. The mixture of Zr-based amorphous powders and $LiF+MgF_2$ flux powders was deposited on a pure Ti substrate, and then an electron beam irradiated this powder mixture to fabricate a one-layer surface composite. A four-layer surface composite, in which the composite layer thickness was larger than 3 mm, was also fabricated by irradiating the deposited powder mixture by an electron beam three times on the one-layer surface composite. The microstructural analysis results indicated that a small amount of fine crystalline particles were homogeneously distributed in the amorphous matrix of the surface composite layer. According to the ballistic impact test results, the surface composite layers effectively blocked a fast traveling projectile, while many cracks were formed at the composite layers, and thus the surface composite plates were not perforated. The surface composite layer containing ductile ${\beta}$ dendritic phases showed a better ballistic performance than the one without dendrites because dendritic phases hindered the propagation of shear bands or cracks.

• Proceedings of the KIEE Conference
• /
• 1998.07e
• /
• pp.1761-1763
• /
• 1998

ITO(Iridium-Tin Oxide) thin film, as discharge electrodes in AC PDP, should have low resistivity and high transparency. Regarded as a high deposition rate method, the ITO thin film fabricated by the facing target sputtering system has been studied in this paper. The electrical property of the ITO film deposited below $150^{\circ}C$ is not satisfied. The SEM pictures show that the ITO films deposited below $150^{\circ}C$ are amorphous. After being annealed the amorphous ITO films become crystalline, and for this reason, the electrical property of amorphous ITO films can be effectively improved by annealing process. An ITO film with the resistivity as low as $1.99{\times}10^{-4}$ and transparency above 85% has be gotten after vacuum annealing at $300^{\circ}C$ for 2 hours while deposited at $75^{\circ}C$. The corresponding deposition rate is $220{\AA}/min$.