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http://dx.doi.org/10.4191/kcers.2016.53.3.295

Thermal Conductivity Analysis of Amorphous Silicon Formed by Natural Cooling: A Molecular-dynamics Study  

Lee, Byoung Min (School of Energy, Materials & Chemical Engineering, Korea University of Technology and Education)
Publication Information
Journal of the Korean Ceramic Society / v.53, no.3, 2016 , pp. 295-300 More about this Journal
Abstract
To investigate the thermal conductivity and the structural properties of naturally cooled excimer-laser annealed Si, molecular-dynamics (MD) simulations have been performed. The thermal conductivity of crystalline Si (c-Si) was measured by direct method at 1000 K. Steady-state heat flow was measured using a stationary temperature profile; significant deviations from Fourier's law were not observed. Reliable processes for measuring the thermal conductivity of c-Si were presented. A natural cooling process to admit heat flow from molten Si (l-Si) to c-Si was performed using an MD cell with a size of $48.9{\times}48.9{\times}97.8{\AA}^3$. During the cooling process, the temperature of the bottom $10{\AA}$ of the MD cell was controlled at 300 K. The results suggest that the natural cooling system described the static structural property of amorphous Si (a-Si) well.
Keywords
MD simulations; Silicon; Thermal conductivity; Natural cooling; Static structure factors;
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