• Applied Microscopy
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• 제43권2호
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• pp.98-101
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• 2013

In the present study, formation of yard and shell has been investigated in as-melt-spun $Gd_{30}Ti_{25}Al_{25}Co_{20}$ alloy using a variety of transmission electron microscopy techniques. The phase separation during cooling leads to the formation of the microstructure consisting of amorphous droplets with different size scales embedded in the amorphous matrix. Due to the interdiffusion at the interface after the first-step phase separation, ~50 nm-thick yard develops on the surface of the primary droplet particle. Due to the critical wetting phenomenon, ~5 nm thickness shell enveloping the droplet forms. The sell is enriched in Co and Ti, implying that the composition is close to that of the droplet.

• 대한전기학회논문지
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• 제41권7호
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• pp.760-765
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• 1992

The material properties and the TFT characteristics fabricated on SiOS12T substrate by LPCVD using SiHS14T gas were investigated. The deposition rate showed Arrhenius behavior with an activation energy of 31Kcal/mol. And the transition temperature form amorphous to crystalline deposition was observed at 570$^{\circ}C$-580$^{\circ}C$. The strong(220) texture was observed as the deposition temperature increases. XRD analysis showed that the film texture of the as-deposited polycrystalline silicon does not change after annealing at 850$^{\circ}C$. The fabricated TFT's based on the as-deposited amorphous film showed superior electrical characteristics to those of the as-deposited polycrystalline films. It is considered that the different electrical characteristics result from the difference of flat band voltage(VS1FBT) due to the interface trap density between the gate oxide and the active channel.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.248-248
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• 2016

We have investigated the crystallinity, preferential ordering, and interfacial stability of 1,4,5,8,9,11-hexaazatriphenylene-hexanitrile (HATCN) thin film interconnected with organic/inorganic multilayer. At the region close to the organic-organic interface, HATCN formed low crystalline order with substantial amorphous phase. As film growth continued, HATCN stacked with high crystalline phase. After a sputtering deposition of the indium zinc oxide (IZO) layer on top of HATCN/organic layer, the volume fraction of preferentially ordered HATCN crystals increased without any structural deterioration. In addition, the HATCN surface was kept quite stable by preserving the sharp interface between HATCN and sputtering deposited IZO layers.

• 전기학회논문지
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• 제56권7호
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• pp.1255-1260
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• 2007

[ $TiO_2-V_2O_5$ ] sol was prepared using sol-gel method. Sol changed to gel with hydrolysis and polymerization. DTA properties of gel powder had endothermic reaction due to evaporation of propanol about $80^{\circ}C$, had exothermic reaction due to combustion of propanol about $230^{\circ}C$ and had exothermic reaction due to combustion of alkyl group about $350^{\circ}C$. Crystalline properties of gel powder retained amorphous phase at $50^{\circ}C$, retained anatase phase from $400^{\circ}C\;to\;600^{\circ}C$ and had all rutile phase over $700^{\circ}C$ at 0.01mole $V_2O_5$ additive. The capacitance of thin films increased with increasing heat treatment temperature and thin films had best properties at $700^{\circ}C$. The capacitance of thin films increased a lot with decreasing measurement frequency.

• 한국전기전자재료학회논문지
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• 제23권3호
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• pp.199-205
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• 2010

The crystallization speed (v) of amorphous (InTe)$_x$(GeTe) (x = 0.1, 0.3 and 0.5) films and their thermal, optical and electrical behaviors have been investigated using nano-pulse scanner (wavelength = 658 nm, laser beam diameter < 2 ${\mu}m$), X-ray diffraction (XRD), 4-point probe and UV-vis-IR spectrophotometer. These results were compared with those of $Ge_2Sb_2Te_5$ (GST) film, comprehensively utilized for phase-change random access memory (PRAM). Both v-value and thermal stability of (InTe)$_{0.1}$(GeTe) and (InTe)$_{0.3}$(GeTe) films could be enhanced in comparison with those of the GST. Contrarily, the v-value in the (InTe)$_{0.5}$(GeTe) film was so drastically deteriorated that we could not quantitatively evaluate it. This deterioration is thought because amorphous (InTe)$_{0.5}$(GeTe) film has relatively high reflectance, resulting in too low absorption to cause the crystallization. Conclusively, it could be thought that a proper compositional (InTe)$_x$(GeTe) films (e.g., x < 0.3) may be good candidates with both high crystallization speed and thermal stability for PRAM application.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.53-54
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• 2013

Nano-multilayered CrAlSiN films consisting of crystalline CrN nanolayers and amorphous AlSiN nanolayers were deposited by cathodic arc plasma deposition. Their oxidation characteristics were studied between 600 and $1000^{\circ}C$ for up to 70 h in air. During their oxidation, the amorphous AlSiN nanolayers crystallized. The formed oxides consisted primarily of $Cr_2O_3$, ${\alpha}-Al_2O_3$, $SiO_2$. The outer $Al_2O_3$ layer formed by outward diffusion of Al ions. Simultaneously, an inner ($Al_2O_3$, $Cr_2O_3$)-mixed layer formed by the inward diffusion of oxygen ions. $SiO_2$ was present mainly in the lower part of the oxide layer due to its immobility. The CrAlSiN films displayed good oxidation resistance, owing to the formation of oxide crystallites of $Cr_2O_3$, ${\alpha}-Al_2O_3$, and amorphous $SiO_2$.

• 한국자기학회지
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• 제2권1호
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• pp.29-36
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• 1992

본 연구에서는 장래의 전자공업 및 정보산업의 기본소재로서 그 응용이 기대되고 있는비정질 산화물자성체를 개발하기 위한 기초연구를 수행하였다. 현재 연구보고 되어 있는 강자성비정질 산화물은 같은 조성의 다결정 ferrite에 비하여 그 자성이 빈약하므로 자성이 좀더 강한비정질 spinel ferrite의 개발이 요구된다. 자체 제작한 쌍 roller 초급내장치로써 $CaO-B_{2}O_{3}$ 계 amorphous ferrite 시료를 제조하고 얻어진 시편의 제특성을 조사하기 위해 XRD, DTA/TG, VSM, $M\"{o}ssbauer$ spectrum으로 측정한 결과 다음과 같은 결론을 얻었다. $CaO-Bi_{2}O_{3}$ 계 amorphous ferrite는 10-50 mole% CaO, 10-50 mole% $Bi_{2}O_{3}$. 40-70 mole% $Fe_{2}O_{3}$의 조성 영역에서 제조가 가능하고 $BiFeO_{3}$와 $CaFe_{4}O_{7}$의 혼합 조성부근에서 강력한 자화를 나타낸다. 특히 ${(CaO)}_{20}-{(Bi_{2}O_{3})}_{15}{(Fe_{2}O_{3}}_{65}$의 조성에 있어서는 자화가 약 21.84 emu/g(10 kOe)이며 강 자성적인 거동을 나타낸다. 이 비정질 ferrite는 반강자성상($\alpha$-상)과 강자성상($\beta$-상)으로 되어 있다. 비정질 ferrite의 결정화는 $550^{\circ}C$와 $775^{\circ}C$에서 2단계로 일어나고, 그때 나타나는 결정상은 $BiFeO_{3}$의 perovskite 상과 ${\alpha}-Fe_{2}O_{3}$ 상이다.

• 한국재료학회지
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• 제4권5호
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• pp.541-549
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• 1994

공침법으로 제조된 비정질 $PbTiO_{3}$전구체의 결정화거동과 구조적 변화를 XRD, 라만스펙트럼, TEM, RDF등으로 조사하였다. 전구체는 이온안정제로 $H_2O_2$혹은 $NH_4NO_3$를 사용하여 제조된 질산납과 사염화티탄의 혼합수용액으로부터 $45^{\circ}C$, pH 9에서 제조되었다. 이온안정제로 $H_2O_2$를 사용한 경우보다 $NH_4NO_3$를 사용하여 제조된 공침물이 더 낮은 온도에서 결정화가 시작되며 결정화의 활성화에너지도 더 작은 값을 가진다. 비정질의 공침물은 transient phase를 거쳐 결정 $PbTiO_{3}$로 변태된다. 비정질 상태의 평균 원자거리는 열처리온도의 증가에 따라 감소한다.

• Journal of Astronomy and Space Sciences
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• 제28권4호
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• pp.253-260
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• 2011

To reproduce the multiple broad peaks and the fine spectral features in the spectral energy distributions (SEDs) of T Tauri stars, we model dust around T Tauri stars using a radiative transfer model for multiple isothermal circumstellar dust shells. We calculate the radiative transfer model SEDs for multiple dust shells using the opacity functions for various dust grains at different temperatures. For six sample stars, we compare the model results with the observed SEDs including the Spitzer spectral data. We present model parameters for the best fit model SEDs that would be helpful to understand the overall structure of dust envelopes around classical T Tauri stars. We find that at least three separate dust components are required to reproduce the observed SEDs. For all the sample stars, an innermost hot (250-550 K) dust component of amorphous (silicate and carbon) and crystalline (corundum for all objects and forsterite for some objects) grains is needed. Crystalline forsterite grains can reproduce many fine spectral features of the sample stars. We find that crystalline forsterite grains exist in cold regions (80-100 K) as well as in hot inner shells.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.28-31
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• 1994

We have investigated the characterization of $V_2O_{5}$ thin films as a counter electrode for lithium based complementary electrochromic devices. The amorphous $V_2O_{5}$ thin films produces comparatively small changes in transmittance in the visible and near infrared compared to the crystalline $V_2O_{5}$ thin films, while the degradation occurs in a-$V_2O_{5}$ thin films with increasing the cycle life time. As the thickness of $V_2O_{5}$ thin films increases from 100 to 600 nm, the magnitude of transmittance modulation decreases. The crystalline $V_2O_{5}$ thin films with thickness around 1000 have electrochromic properties suitable for counter electrode application in lithium based electrochromic smart windows.