• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.178-178
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• 1999

Low temperature Si epitaxy can provide flexibility for a device designer to tailor or optimize the device performance. It is better method for controlling the doping thickness, concentration and profile than ion implantation and diffusion. But there is a limited growth thickness in this method. At a given temperature, the film grows epitaxially for a certain limiting thickness(hepi) and becomes amorphous. The transition from crystalline Si to amorphous Si is abrupt. In this study, Si film was deposited by ion beam sputter deposition on Si (0001) above a limiting thickness and measure the strain in the interface between crystalline Si and amorphous Si. The strain was compressive and the maximum value was about 2%.

• Journal of Korean Vacuum Science & Technology
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• 제2권2호
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• pp.97-100
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• 1998

We have investigated the effects of crystalline activation on solid phase crystallization (SPC) of amorphous silicon (a-Si) thin films. Wet blasting and self ion implantation were employed as the activation treatments to induce macro or micro crystalline damages on deposited a-Si films. Low temperature and larger grain crystallization were obtained by the applied two-step activation. High degree of crystallinity was also observed on both furnace and rapid SPC. crystalline activations showed the promotion of nucleation on the activated regions and the retardation of growth in an amorphous matrix in SPC. The observed behavior of two-step SPC was strongly dependent on the applied activation and annealing processes. It was also found that the diversified effects by macro and micro activations on the SPC were virtually diminished as the annealing temperature increased.

• The Korean Journal of Ceramics
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• 제1권2호
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• pp.75-80
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• 1995

Development of phases, evolution of microstructures, and dielectric response characteristics of amorphous lead iron tungstates during crystabllization were investiageted. A series of mircographs showing the evolution sequence of microstructures is presented. Crystallization was observed to initiate from inside of the amorphous material. A cubic perovskite phase developed fully at $760^{\circ}C$ from amorphous state via intermediate metastable crystalline structures. Dielectric constant of amorphous PFM was totally insensitive to the temperature change around the Curie temperature of crystalline material. Sintered pellet, with relative density of 96% and an almost pore-free dense internal microstructure, could be prepared from amorphous powder.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.210-213
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. Memory switching in chalcogenides is mostly a thermal process, which involves phase transformation from amorphous to crystalline state. The nonvolatile memory cells are composed of a simple sandwich (metal/chalcogenide/metal). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2004년도 International Symposium on Powder Materials and Processing
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• pp.30-31
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• 2004

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2005년도 추계학술강연 및 발표대회강연 및 발표논문 초록집
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• pp.31-32
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• 2005

• 한국재료학회지
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• 제14권3호
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• pp.181-185
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• 2004

The mechanical properties of a bulk amorphous alloy ($Zr_{41.2}$ $Ti_{13.8}$ /$Cu_{10}$ $Ni_{10}$ $Be_{22.5}$ /at.%) before and after an annealing treatment were investigated. For the bulk amorphous alloy, the compressive strength was about 2.0 GPa, irrespective of the strain rates in the range of $10^{-4}$ to $10^3$$ sec^{-1}$ . Fine-sized nanocrystalline particles (10～100 nm) were precipitated homogeneously in the bulk amorphous matrix after the annealing treatments. Compared to the bulk amorphous materials, these composite materials, composed of the nanocrystalline phases and a bulk amorphous matrix had much different mechanical properties. The strength and strain of coposite materials measured by a compressive test showed a peak-maximum values at 7 vol.% of the nanocrystalline phases. The values in higher volume fraction of the crystalline phases in the amorphous matrix were decreased, as measured by both quasi-static and high strain rate. The decrease in fracture strength is due to presence of the dispersed large-crystalline phases in the amorphous matrix.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.633-636
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• 1999

In this study, we have fabricated amorphous FeZrBAg thin films with low core losses by using DC magnetron sputtering method. After deposition, rotational field annealing (RFA) method was performed in the dc field of 1.5 kOe. The amorphous FeZrBAg thin films produced by annealing at 35$0^{\circ}C$ was founded to have high permeability of 8680 at 100 MHz, 0.2 mOe, low coercivity of 0.86 Oe high magnetization of 1.5 T and very low core loss of 1.3 W/cc at 1 MHz, 0.IT respectively. Excellent soft magnetic properties in a amorphous FeZrBAg thin films in the present study are presumably the homogeneous formation of very fine bcc $\alpha$-Fe crystalline with the 8.2 nm in an amorphous FeZrBAg thin film matrix.

• Rapid Communication in Photoscience
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• 제3권2호
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• pp.38-41
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• 2014

The title compound (BMBZA) was designed and synthesized as a novel fluorescent amorphous molecular material. BMBZA was found to exhibit solvatofluorochromism and to readily form an amorphous glass by cooling the melt on standing. In addition, the morphological change from crystalline state to amorphous one could be induced by mechanical grinding. Although fluorescence was scarcely observed for the crystalline sample of BMBZA, the grinding the sample was found to enhance the fluorescence emission, that is, BMBZA exhibited on-off type mechanofluorochromism.

• 한국자기학회지
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• 제19권6호
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• pp.191-196
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• 2009

비대칭 거대 자기임피던스 효과를 보이는 자기장 열처리된 CoFeSiB 비정질 리본에서 자기 바이어스 현상을 MOKE 방법을 이용하여 연구하였다. 열처리 과정에서 리본의 양 표면에 형성된 경자성 결정층이 내부 연자성 비정질 상의 자화특성에 미치는 영향을 조사하기 위해 열처리 후 화학적 에칭에 의해 한쪽 및 양쪽 표면의 결정층을 깎아낸 시편들을 준비하고 각 시편에 대해 비정질 상의 자화곡선을 MOKE 방법으로 측정하였다. 열처리 과정에서 표면에 형성된 경자성층이 내부의 비정질 연자성 상에 바이어스 자기장을 작용하고 있다는 것과 바이어스 자기장의 방향이 경자성층의 자화방향에 반대 방향임을 자기이력곡선의 이동을 통해 확인하였다.