• Nuclear Engineering and Technology
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• v.28 no.4
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• pp.397-404
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• 1996

The hydrogenated amorphous silicon (a-Si : H) holds good promise for radiation detection from its inherent merits over crystalline counterpart. For the application to alpha spectroscopy, the induced charge collection in a-Si : H pin detector diodes ons simulated based on a relevant non-uniform charge generation model. The simulation was peformed for the initial energy and the range of incident alpha particles, detector thickness and the operational parameters such as the applied reverse bias voltage and shaping time. From the simulation, the total charge collection was strongly affected by hole collection as expected. To get a reasonable signal generation, therefore, the hole collection should be seriously considered for detector operational parameters such as shaping time and reverse voltage etc. For the spectroscopy of alpha particle from common alpha sources, the amorphous silicon should have about 70${\mu}{\textrm}{m}$ thickness.

• Journal of the Korean Ceramic Society
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• v.19 no.3
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• pp.223-228
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• 1982

For the preparation of ferroxidure BaO.5.5 $Fe_2O_3$ with high coercive force, the green and calcined coprecipitates, which were obtained by neutralizing the mixed salt solution $FeCl_2-BaCl_2$ and $FeCl_3-BaCl_2$ with alkali solution $NaOH-Na_2CO_3$, were investigated about the thermal reaction, crystal growth, and the magnetic properties of the sintered specimens. The very single-domain crystallites of Ba-ferrite with high coercive force are formed from the coprecipitate of amorphous $Fe(OH)_3$ and amorphous $BaCO_3$ at lower temperature than that of subnucleus crystalline $\delta$-FeOOH and amorphous $BaCO_3$.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.42-47
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• 2004

Metallic glasses are amorphous meta-stable solids and are now being processed in bulk form suitable for structural applications including impact. Bulk metallic glasses have many unique mechanical properties such as high yield strength and fracture toughness, good corrosion and wear resistance that distinguish them from crystalline metals and alloys. However, only a few studies could be found mentioning the dynamic response and damage of metallic glasses under impact or shock loading. In this study, we employed a small explosive detonator for the dynamic indentation on a Zr-based bulk amorphous metal in order to evaluate the damage behavior of bulk amorphous metal under impact loading. These results were compared with those of spherical indentation under quasi-static and impact loading. The interface bonded specimens were adopted to observe the appearances of subsurface damage induced during indentation under different loading conditions.

• Journal of the Korean Chemical Society
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• v.57 no.6
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• pp.691-696
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• 2013

Black carbon contributes to global warming and melting of polar ice as well as causing respiratory diseases. However, it is also an inexpensive, easily available carbon nano material for elementary chemistry experiments. In this study, black carbon samples collected from candle light and automobile exhaust pipes have been investigated to examine their compositions and surface characteristics. The observed broad G and D bands and amorphous $sp^3$ band in their Raman spectra as well as the high intensity of the D (defect) band reveal that black carbon is principally made of amorphous graphite. The black carbon deposits in automobile exhaust pipes are apparently more amorphous, probably due to the shorter time allowed for formation of the carbonaceous matter. An exceptionally large water contact angle ($159.7^{\circ}$) is observed on black carbon, confirming its superhydrophobicity. The surface roughness evidently plays an important role for the contact angle much larger than that of crystalline graphite ($98.3^{\circ}$). According to the Sassie-Baxter equation, less than 1% the area actually in contact with the water drop.

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.107-109
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• 2000

The crystallization process and the electrical properties of amorphous tin-doped indium oxide (ITO) films have been studied in contrast with those of undoped indium oxide (IO) films. Amorphous ITO and IO films were prepared by magnetron sputtering succeeded by annealing in the air at various temperatures. ITO films showed higher crystallization temperature compared with that of IO films, suggesting an excess free energy caused by the repulsion between the active donors ($Sn^{4+}$). The analysis of the electrical properties alternated with the phased annealing of films provided essential information for understanding the conduction mechanisms of ITO. It was also revealed that the amorphous IO/ITO films showed oxidation around $100^{\circ}C$ in contrast with crystalline IO/ITO films with the oxidation temperature above $200^{\circ}C$.

• Korean Journal of Materials Research
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• v.13 no.5
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• pp.303-308
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• 2003

Amorphous carbon nitride films deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition (PECVD) technique using CH$_4$and $N_2$as reaction gases were thermally annealed at various temperatures under$ N_2$atmosphere, then their physical properties were investigated particularly as a function of annealing temperature. Above $600^{\circ}C$ a small amount of crystalline $\beta$-$C_3$$N_4$ phase evolves, while the film surface becomes very rough due to agglomeration of fine grains on the surface. As the annealing temperature increases, both the hardness and the $sp^3$ bonding nature are enhanced. In contrast to our expectation, higher annealing temperature results in a relatively higher friction mainly due to big increase in roughness at that temperature.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.8
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• pp.950-958
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• 1988

We have implemented a RTA system using W-halogen lamps and tried to recrystallize the phosphorus ion implanted amorphous silicon on insultor (SOI) taking advantages of seeding window. The purpose of this study is to investigate the possibility of a typical crystalline orientation occurred during the solidifying process of molten amorphous silicon layer. Experimental results show that several twin boundaries are found on the seeding window region after annealing for 15 sec at 1040\ulcorner. These twin boundaries represent that the recrystallization is partialy possible and when the annealing is done at 1150\ulcorner, (100) etch pits with <110> facets are found on the solidified amorphous silicon layer. Consequently, Hall mobility of recrystallized silicon film is measured and the thermal behavior of grain boundary is also observed by SEM.

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.99-103
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• 1999

We investigated the crystalline behavior in active ion implanted silicon through Raman spectroscopy. Four a-Si(amorphous Si) peaks were observed that are related to the ion implantation induced a-Si layer. After the isochronical anneal(30min). and isothermal anneal($450^{\circ}C$), noticeable recovery of crystalline-Si peak at 519cm\ulcorner and peak center shift of the a-Si TO from 465cm\ulcorner to 480cm\ulcorner were observed by RNM(Random Network Model). By applying RNM and SCLM(Spatial Correlation Length Model), the peak center and FWHM(the Full Width at half Maximum) of a-Si were changed dramatically between T\ulcorner=$200^{\circ}C$ and 30$0^{\circ}C$. From the results, it can be said that there is an abrupt structural change at this temperature region.

• Journal of the Korean institute of surface engineering
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• v.27 no.2
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• pp.83-90
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• 1994

We have investigated the mechanism for the abnormal oxide growth occuring during oxidation of the crystalline tungsten silicide. TEM and XPS analysis reveal the abnormaly grown oxide layer consisting of crystalline $Wo_3$ and amorphous $SiO_2$. The presence of crystalline $Wo_3$ provides a rapid diffusion of oxygen through the oxide layer. The abnormal oxide growth is mainly due to the poor quality of initial oxide layer growth on tungsten silicide. Two species such as tungsten and silicon from decomposition fo tungsten silicide as well as silicon supplied from the underlying polysilicon are the main contributors sto abnormal oxide forma-tion. Consequently, the abnormal oxidation results in the disintegration of tungsten silicide and thinning of polysilicon as well.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.192.2-192.2
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• 2013

Crystalline order and surface stability of 1,4,5,8,9,11-hexaazatriphenylene-hexanitrile (HATCN) thin films on organic surface were investigated using grazing incidence wide angle x-ray scattering and x-ray reflectivity measurements. In the initial growth regime (less than 20 nm), HATCN molecules were stacked to low crystalline order with substantial amorphous phase. Meanwhile, a thicker film with 50 nm thickness showed high crystalline order of hexagonal phase with three different orientational domains. The domain distribution was quantitatively obtained as a function of tilted angle. By an organic-inorganic interface formation of IZO/HATCN thin film from an indium zinc oxide (IZO) electrode deposition, the surface stability of HATCN film was investigated and the sharp interface was confirmed by the x-ray reflectivity measurement.