• Journal of the Korean Magnetics Society
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• v.5 no.1
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• pp.1-7
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• 1995

${(Fe_{0.85}Co_{0.15})}_{75}Al_{7}B_{18-x}Nb_{x}(x=2,\;4\;and\;6\;at%)\;and\;{(Fe_{0.85}Co_{0.15})}_{75}Al_{y}B_{21-y}Nb_{4}(y=3,\;5,\;7,\;9\;at%)$ alloys were prepared by a single-roll quenching method. Microstructure and magnetic properties of the alloys such as saturation magnetization, initial permeability, coercive force and power loss have been investigated as functions of composition and armea1ing temperature. Nanocrystallines are obtained by armealing of as-prepared amorphous alloys in all compositions except the alloy of 9 at% AI. Saturation magnetization increases after armea1ing and, decreases with Nb content. However, AI and B affects the saturation magnetization insignificantly. Initial perrreability of nanocrystallized alloy at 50 kHz is improved roore than twice compared to that of the as-prepared alloy. Coercive force and core loss reach less than half after armea1ing.

• Journal of the Korean Magnetics Society
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• v.12 no.1
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• pp.30-33
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• 2002

The Effects of Co-substitution in the nanocrystalline Nd-Fe-B-Mo-Cu alloys were investigated. $\alpha$-Fe based nanocrystalline Nd-Fe-B-Mo-Cu alloys were prepared by crystallization process of amorphous Nd-Fe-B-Mo-Cu alloy produced by rapid solidification process. The substitution of Co resulted in the decrease of grain size and improves the hard magnetic properties. The remanence, coercivity, and Curie temperature of nanocrystalline N $d_4$(F $e_{0.85}$ $Co_{0.15}$)$_{82}$ $B_{10}$M $o_3$Cu alloy showed more improved magnetic properties than those of Co-free alloy. The grain size was measured to be about 15 nm. The coercivity, remanence and maximum energy product were 239 kA/m, 1.41, and 103.5 kJ/ $m^3$, respectively, for the nanocrystalline N $d_4$(F $e_{0.85}$ $Co_{0.15}$)$_{82}$ $B_{10}$M $o_3$Cu alloy annealed for 0.6 ks at 640 $^{\circ}C$.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.7
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• pp.46-52
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• 2006

The effects of surface treatment on the hydrogen storage properties of a $Mg_2Ni$ alloy particle were investigated by the microvoltammetric technique, in which a carbon-filament microelectrode was manipulated to make electrical contact with the particle in a KOH aqueous solution. It was found that the hydrogen storage properties of $Mg_2Ni$ at room temperature were improved by the surface treatment with a nickel plating solution. The sodium salts(sodium phosphate and sodium dihydrogen citrate) contained in the nickel plating solution made the alloy form an amorphous-like state, resulting in an improved hydrogen charge/discharge capacity at room temperature as high as about 150[mAh/g] from the original value of 17[mAh/g]. Potential-step experiment was carried out to determine the apparent chemical diffusion coefficient of hydrogen atom($D_{app}$) in the alloy. Since the alloy particle we used here was a dense, conductive sphere, the spherical diffusion model was employed for data analysis. $D_{app}$ was found to vary the order between $10^{-8}{\sim}10^{-9}[cm^2/s]$ over the course of hydrogenation and dehydrogenation process.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.05a
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• pp.123-126
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• 2007

Deformation behavior of $Zr_{55}Cu_{30}Al_{10}Ni_5$ (at. %) bulk metallic glass (BMG) fabricated by suction casting method has been investigated at elevated temperatures in this study. The BMG was first verified to have an amorphous structure thru X-ray diffraction (XRD) and differential scanning calorimetry (DSC). A series of compression tests has consequently been performed in supercooled liquid temperature region to investigate the high temperature deformation behavior. A transition from Newtonian to non-Newtonian flow appeared to take place depending upon both the strain rate and test temperature. A processing map based on a dynamic materials model has been constructed to estimate a feasible forming condition for this BMG alloy.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.67.1-67.1
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• 2010

Triple junction solar cell을 위한 a-SiGe middle cell의 조건별 광학적 특성에 관한 연구를 실시하였다. a-SiGe I층은 GeH4 유량, 압력, H2 dilution ratio를 변화시켜 제조하였으며 전기적, 광학적 특성을 비교하여 최종적으로 선택된 조건을 triple junction solar cell에 적용하였다. a-SiGe I층은 Ge contents가 증가함에 따라 band gap은 감소하고 45% 이상의 조건에서는 700nm 전후 파장의 투과율이 감소하며, 압력이 감소함에 따라 band gap은 소폭 감소하나 700nm 전후 파장의 투과율은 증가하였다. 그리고 H2 ratio가 증가함에 따라 band gap은 소폭 감소하나 투과율에는 큰 변화가 없었다. 상기 결과를 바탕으로 최종적으로 선택된 조건에서 triple-junction solar cell을 제작하여 평가한 결과 초기 변환효율 9%의 결과를 얻었다.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1404_1405
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• 2009

For quantitative understanding of gas discharge phenomena, we should know electron collision cross section. $GeH_4$ is used in many applications with $Si_2H_6$ gas, such as amorphous alloy, a thin film of silicon and solar cell. Therefore, we understand the electron transport characteristics and analysed the electron transport coefficients, the electron drift velocity W, the longitudinal and transverse diffusion coefficient $ND_L$ and $ND_T$, and the ionization coefficient $\alpha$/N in $GeH_4$gas over the E/N range from 0.01 to 1000 Td by two-term approximation of the Boltzmann equation.

• Journal of Powder Materials
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• v.11 no.6 s.47
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• pp.522-527
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• 2004

Nano sized FeAl intermetallic particles were successfully synthesized by plasma arc discharge pro-cess. The synthesized powders shouted core-shell structures with the particle size of 10-20 nm. The core was metallic FeAl and shell was composed of amorphous $AI_{2}O_{3}\;and\;a\;little\;amount\;of\;metallic\;Fe_{3}O_{4}.$ Because of the difference of Fe and Al vapor pressure during synthesis, the Al contents in the nanoparticles depended on the Al contents of master alloy.

• Transactions of Materials Processing
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• v.16 no.4 s.94
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• pp.309-312
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• 2007

Deformation behavior of $Zr_{55}Cu_{30}Al_{10}Ni_5$(at. %) bulk metallic glass(BMG) fabricated by suction casting method has been investigated at elevated temperatures in this study. The BMG was first verified to have an amorphous structure with the analysis of X-ray diffraction(XRD) and differential scanning calorimetry(DSC) data. A series of compression tests has consequently been performed in the region of supercooled liquid temperature to investigate the behavior of high temperature deformation. A transition from Newtonian to non-Newtonian flow appeared to take place depending upon both the strain rate and test temperature. A processing map based on a dynamic materials model has been constructed to estimate a feasible forming condition for this BMG alloy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.5-7
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• 1988

Effect of isothermal aging on the crystallization of $Fe_{78}B_{13}Si_{9}$ metallic glass has been investigated by electrical resistivity, X-ray measurements, bending test, thermal analysis and transmission electron microscopy. Amorphous $Fe_{78}B_{13}Si_{9}$ alloy was annealed isothermally for 5 to 1200 mon. between 300 C and 540 C. It has been found that close relation between relative resistivity and X-ray diffraction pattern showed. The crystalline peak of $\alpha$-(Fe, Si) and Fe$_2$B are detected by X-ray experiment. The crystalline phases observed by TEM show $\alpha$-(Fe, Si) and Fe$_3$B with dendritic and cylindrical morphology, respectively. It has been also found that the embrittleness of aged samples rapidly increased with the crystallization and was shown before the crystallization.th the crystallization and was shown before the crystallization.

• Applied Science and Convergence Technology
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• v.23 no.1
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• pp.34-39
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• 2014

The programmable switches which control the delivery of electrical signals in programmable logic devices are fabricated using memory technology. Although phase change memory (PCM) technology is one of the most promising candidates for the manufacturing of the programmable switches, the threshold switching material should be added to a PCM cell for realization of the programmable switches based on PCM technology. In this work, we report the impurity-doped $Ge_2Sb_2Te_5$ (GST) chalcogenide alloy exhibiting threshold switching property. Unlike the GST thin film, the doped GST thin film prepared by the incorporation of In and P into GST is not crystallized even at the postannealing temperature higher than $200^{\circ}C$. This specific crystallization behavior in the doped GST thin film is attributed to the stabilization of the amorphous phase of GST by In and P doping.