• 전자공학회논문지A
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• 제31A권7호
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• pp.85-94
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• 1994

A high-resolution transmission electron microscopy study of the solid phase crystallization of the amorphous silicon thin films, deposited on SiOS12T at 52$0^{\circ}C$ by low pressure chemical vapor deposition and annealed at 55$0^{\circ}C$ in a dry N$_{2}$ ambient was carried out so that the arrangement of atoms in the crystalline silicon and at the amorphous/crystalline interface of the growing grains could be understood on an atomic level. Results show that circular crystalline silicon nuclei have formed and then the grains grow to an elliptical or dendritic shape. In the interior of all the grains many twins whose{111} coherent boundaries are parallel to the long axes of the grains are observed. From this result, it is concluded that the twins enhance the preferential grain growth in the <112> direction along {111} twin planes. In addition to the twins. many defect such as intrinsic stacking faults, extrinsic stacking faults, and Shockley partial dislocations, which can be formed by the errors in the stacking sequence or by the dissociation of the perfect dislocation are found in the silicon grain. But neither frank partial dislocations which can be formed by the condensation of excess silicon atoms or vacancies and can form stacking fault nor perfect dislocations which can be formed by the plastic deformation are observed. So it is concluded that most defects in the silicon grain are formed by the errors in the stacking sequence during the crystallization process of the amorphous silicon thin films.

• 한국결정성장학회지
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• 제22권2호
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• pp.65-72
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• 2012

본 연구에서는 비정질 실리콘의 알루미늄 유도 결정화(AIC)가 시도되었다. 결정질 실리콘의 좀 더 큰 입자를 얻기 위해, 선택적인 핵생성(Selective nucleation) 시도는 비정질 실리콘 밑의 실리카($SiO_2$) 층의 습식 파우더 분사 처리와 함께 진행됐다. 또한 니켈 층은 실리콘 원자가 알루미늄 층으로 이동하는 것을 방지하기 위한 확산 방지막(Diffusion barrier)으로 선택되었다. $520^{\circ}C$에서 열처리를 한 후에 XRD 분석을 통해 Si(111) 방향으로 결정화된 결정질 실리콘을 확인했고 니켈은 실리콘과 알루미늄 사이의 확산 방지막으로 매우 효과적인 재료라는 것을 입증하였다. 이 연구는 고성능의 태양전지에 적용하는 결정질 실리콘 막의 좀 더 큰 입자를 얻기 위한 방법 중의 하나라고 기대된다.

• Nuclear Engineering and Technology
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• 제28권4호
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• pp.397-404
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• 1996

The hydrogenated amorphous silicon (a-Si : H) holds good promise for radiation detection from its inherent merits over crystalline counterpart. For the application to alpha spectroscopy, the induced charge collection in a-Si : H pin detector diodes ons simulated based on a relevant non-uniform charge generation model. The simulation was peformed for the initial energy and the range of incident alpha particles, detector thickness and the operational parameters such as the applied reverse bias voltage and shaping time. From the simulation, the total charge collection was strongly affected by hole collection as expected. To get a reasonable signal generation, therefore, the hole collection should be seriously considered for detector operational parameters such as shaping time and reverse voltage etc. For the spectroscopy of alpha particle from common alpha sources, the amorphous silicon should have about 70${\mu}{\textrm}{m}$ thickness.

• 한국광물학회지
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• 제16권2호
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• pp.161-169
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• 2003

한성 비정질 투휘석$(Ca,Mg)SiO_3$에 대한 상변이 연구를 압력은 다이아몬드앤빌기기를 이용하여 ∼30 GPa까지, 온도는 약(YAG) 레이저 가열기기를 이용하여 ∼$1000^{\circ}C$에서 조사(scanning)하여 시행하였다. 비정질 투휘석은 고온-고압 하에서 곧바로 등축정계에 속하는 단상의 $(Ca,Mg)SiO_3$페롭스카이트 결정구조로 상변이 하였다. 이러한 결과는 고온-고압 하에서 사방정계에 속하는 $MgSiO_3$페롭스카이트 상과 등축정계에 속하는 $CaSiO_3$페롭스카이트 상으로 분리되는 상변이를 하는 결정질 투휘석의 상변이 계통과는 큰 차이를 보이고 있다. 이러한 차이는 출발시료의 차이점이나 특히 온도가 상변이에 큰 영향인자로 작용하여 기인한 것으로 판단된다. 이러한 강변이 관계는 맨틀의 온도, 압력 및 산소분압 차이 등에 의해 맨틀전이대나 하부맨틀을 구성하는 광물상의 조합에 영향을 줄 수 있다.

• Applied Microscopy
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• 제34권1호
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• pp.23-29
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• 2004

본 연구에서는 에너지 여과장치와 직접 고온 가열 장치를 이용하여 실리카 나노입자의 비정질 구조 분석과 가열실험을 통한 구조변화에 대해 연구하였다. 실리카 나노입자의 전자회절도형은 세 개의 diffuse한 ring으로 구성이 되어 있으며, $900^{\circ}C$의 온도에서 실리카 나노입자는 서서히 결정화가 이루어짐을 알 수가 있었다. 세 개의 diffuse한 ring은 비정질 실리카 구조가 $SiO_4$ tetrahedra가 구조의 기본 단위로 이루어졌으며, 가열에 의해 이들이 점이적으로 tridymite 이상적인 층상 구조로 결정화되어 간다는 것을 이해할 수 있었다. 또한 전자현미경 내의 고진공하에서 $850^{\circ}C$ 이상의 온도 가열로 인해 $SiO_2$로부터 증발된 SiO가 grid에 재증착되는 것을 관찰할 수 있었고, 남아 있는 $SiO_2$는 전기로를 이용한 가열 실험결과와 같이 비정질 구조에서 orthorhombic trydimite로의 결정화가 이루어짐을 알 수 있었다.

• 한국표면공학회지
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• 제34권5호
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• pp.503-509
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• 2001

Thin films of hydrogenated amorphous silicon (a-Si : H) and hydrogenated amorphous silicon carbide (a-SiC:H) of different compositions were deposited on Si(100) wafer and glass by RF plasma-enhanced chemical vapor deposition (RF-PECVD). In the present work, we have investigated the effects of the RF power on the properties, such as optical band gap, transmittance and crystallinity. The Raman data show that the a-Si:H material consists of an amorphous and crystalline phase for the co-presence of two peaks centered at 480 and $520 cm^{-1}$ . The UV-VIS data suggested that the optical energy band gap ($E_{g}$ ) is not changed effectively with RF power and the obtained $E_{g}$(1.80eV) of the $\mu$c-Si:H thin film has almost the same value of a-Si:H thin film (1.75eV), indicating that the crystallity of hydrogenated amorphous silicon thin film can mainly not affected to their optical properties. However, the experimental results have shown that$ E_{g}$ of the a-SiC:H thin films changed little on the annealing temperature while $E_{g}$ increased with the RF power. The Raman spectrum of the a-SiC:H thin films annealed at high temperatures showed that graphitization of carbon clusters and microcrystalline silicon occurs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.134-134
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• 2009

In this work, we report that crystallization speed as well as the electrical and optical properties about the N-doped $Ge_2Sb_2Te_5$ thin films. The 200-nm-thick N-doped $Ge_2Sb_2Te_5$ thin film was deposited on p-type (100) Si and glass substrate by RF reactive sputtering at room temperature. The amorphous-to-crystalline phase transformation of N-doped $Ge_2Sb_2Te_5$ thin films investigated by X-ray diffraction (XRD). Changes in the optical transmittance of as-deposited and annealed films were measured using a UV-VIS-IR spectrophotometer and four-point probe was used to measure the sheet resistance of N-doped $Ge_2Sb_2Te_5$ thin films annealed at different temperature. In addition, the surface morphology and roughness of the films were observed by Atomic Force Microscope (AFM). The crystalline speed of amorphous N-doped $Ge_2Sb_2Te_5$ films were measured by using nano-pulse scanner with 658 nm laser diode (power : 1~17 mW, pulse duration: 10~460 ns). It was found that the crystalline speed of thin films are decreased by adding N and the crystalline temperature is higher. This means that N-dopant in $Ge_2Sb_2Te_5$ thin film plays a role to suppress amorphous-to-crystalline phase transformation.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2005년도 춘계학술대회
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• pp.196-200
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• 2005

In this work, we investigated simple Aㅣ/TCO/a-Si:H(n)/c-Si(p)/Al hetero-junction solar cells prepared by low temperature processes, unlike conventional thermal diffused c-Si solar cells. a-Si:H/c-Si hetero-junction solar cells are processed by low temperature deposition of n-type hydrogenated amorphous silicon (a-Si:H) films by plasma-enhanced chemical vapor deposition on textured and flat p-type silicon substrate. A detailed investigation was carried out to acquire optimization and compatibility of amorphous layer, TCO (ZnO:Al) layer depositions by changing the plasma process parameters. As front TCO and back contact, ZnO:Al and AI were deposited by rf magnetron sputtering and e-beam evaporation, respectively. The photovoltaic conversion efficiency under AMI.5 and the quantum efficiency on $1cm^2$ sample have been reported. An efficiency of $12.5\%$ is achieved on hetero-structure solar cells based on p-type crystalline silicon.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2008년도 춘계학술대회 논문집
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• pp.378-381
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• 2008

고효율 a-Si:H/c-Si 이종접합 태양전지를 얻기 위해서는 우수한 c-Si wafer 위에 고품질의 비정질 실리콘박막을 통한 heterointerface를 형성하는 것이 매우 중요하다. 이를 달성하기 위해서는 공정중에 오염되기 쉬운 Si wafer 표면 상태를 정확히 검사하고 잘 관리하여야 한다. 본 연구에서는 세정 및 표면산화에 따른 Si wafer 상태를 Spectroscopic Ellipsometry 및 u-PCD를 이용하여 분석하였으며, <$\varepsilon$2> @4.25eV 값이 Si wafer 상태를 잘 나타내고 있음을 확인하였고 세정 최적화 할 경우 그 값이 43.02에 도달하였다. 또한 RF-PECVD로 증착된a-Si:H 박막을 EMA 모델링을 통해 분석한 결과 낮은 결정성과 높은 밀도를 가지는 a-Si:H를 얻을 수 있었으며, 이를 이종접합 태양전지에 적용한 결과 Flat wafer상에서 10.88%, textured wafer 적용하여 13.23%의 변환효율을 얻었다. 결론적으로 Spectroscopic Ellipsometry가 매우 얇고 고품질의 다층 박막이 필요한 이종접합 태양전지 분석에 있어 매우 유용한 방법임이 확인되었다.

• 한국세라믹학회지
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• 제31권10호
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• pp.1231-1239
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• 1994

In this study, gel powder which had relatively high hydration reactivity in CaO and P2O5 rich composition of CaO-P2O5-SiO2-H2O system was prepared by sol-gel process and its hydrated specimen was manufactured. The it was investigated to appropriate calcination temperature in sol-gel process which hydrated specimen of gel powder have proven to strength and the effect of factors influenced strength in hydration process. The major product of before and after hydration reaction was hydroxyapatite, and crystalline phase of C-S-H was already formed during gelation process. After hydration reaction of pressed specimen, crystalline phase of C-S-P-H was formed. It was hydrated product of silicocarnotite (5CaO.P2O5.SiO2). Gel phases of C-S-H and C-S-P-H occured as a result of partial substitution of amorphous silica by P2O5 was formed. The strength of hydrated hardened body is developed by strong bonding and bridging between the gel phases of C-S-H or C-S-P-H and the crystalline products such as hydroxyapatite, Ca(OH)2 C-S-H and C-S-P-H. In addition, the ultrafine gel powder have an great effect on increase of hydration reaction.