• 소성∙가공
• /
• 제13권3호
• /
• pp.285-289
• /
• 2004

Micro tensile test specimens of thin film single crystal silicon for the most useful structural materials in MEMS (Micro Electro Mechanical System) devices were fabricated using SOI (Silicon-on-Insulator) wafers and MEMS processes. Dimensions of micro tensile test specimens were thickness of $7\mu\textrm{m}$, width of 50~$350\mu\textrm{m}$, and length of 2mm. Top and bottom silicon were etched using by deep RIE (Reactive Ion Etching). Thin film aluminum markers on testing region of specimens with width of $5\mu\textrm{m}$, lengths of 30~$180\mu\textrm{m}$ and thickness of 200 nm for measuring tensile strain were fabricated by aluminum wet etching method. Fabricated side wall angles of aluminum marker were about $45^{\circ}~50^{\circ}$. He-Ne laser with wavelength of 633nm was used for checking fringed patterns.

• 한국주조공학회지
• /
• 제33권6호
• /
• pp.242-247
• /
• 2013

The most widely utilized commercial, aluminum-casting alloys are based on an aluminum-silicon system due to its excellent casting, and good mechanical, properties. Unfortunately, these Al-Si based alloys are inherently poor energy conductors; compared to pure aluminum, because of their high silicon content. This means that they are not suitable for applications demanding high eletrical or thermal conductivity. Therefore, efforts are currently being made to develop new, highly-conductive aluminum-casting alloys containing no silicon. In this research, a number of properties; including potential for castability, were investigated for a number of Al-Fe-Zn-Cu alloys with varying Cu content. As the copper content was increased, the tensile strength of Al-Fe-Zn-Cu alloy tended to increase gradually, while the electrical conductivity was slightly reduced. Fluidity was found to be lower in high-Cu alloys, and susceptibility to hot-cracking was generally high in all the alloys investigated.

• 열처리공학회지
• /
• 제31권1호
• /
• pp.6-11
• /
• 2018

The anodic oxidation behavior of Si-containing aluminum alloy for diecasting was investigated. Especially, the property changes during anodization both on aluminum 1050 and 9 weight percentage silicon containing aluminum (Al-9Si) alloys were analyzed by the static current test. In order to fabricate a uniform anodic oxidation film by effect of Al-Si compound, nitric acid containing hydrofluoric acid had been used as a desmutter for aluminum alloy after alkaline etching. It was found that the level of voltage of Al-9Si alloy during the static current test was almost as double as higher than aluminum 1050 through anodization. By adding hydrofluoric acid in the nitric acid electrolyte, the silicon compound on the surface was removed, and the optimum amount of added hydrofluoric acid could be derived. It was also observed that the size of silicon compound formed on the surface could be refined by heat treatment at $500^{\circ}C$ and followed water quenching.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.188.1-188.1
• /
• 2014

Aluminum is widely used as a material for electrode on silicon based devices. Especially, aluminum films are used as backside and front-side electrodes in silicon quantum dot (QD) solar cells. In this point, the diffusion of aluminum is very important for the enhancement of power conversion efficiency by improvement of contact property. Aluminum was deposited on a Si (100) wafer and a Si QD layer by ion beam sputter system with a DC ion gun. The Si QD layer was fabricated by $1100^{\circ}C$ annealing of the $SiO_2/SiO_1$ multilayer film grown by ion beam sputtering deposition. Cs ion beam with a low energy and a grazing incidence angle was used in SIMS depth profiling analysis to obtain high depth resolution. Diffusion behavior of aluminum in the Al/Si and Al/Si QD interfaces was investigated by secondary ion mass spectrometry (SIMS) as a function of heat treatment temperature. It was found that aluminum is diffused into Si substrate at $450^{\circ}C$. In this presentation, the effect of heat treatment temperature and Si nitride diffusion barrier on the diffusion of Al will be discussed.

• Tribology and Lubricants
• /
• 제23권4호
• /
• pp.143-148
• /
• 2007

The surface defects of an aluminum tube for an OPC drum have been analyzed using a scanning microscopy(SEM) and an energy dispersive X-ray analyze.(EDX). The SEM/EDX system, which may provide good information on the surface defects and their distributions, provides an optical diameter of an impurity and a chemical composition. These are strongly related on the coated film thickness and quality of an OPC drum, which is a key element of a toner cartridge for a laser printer. The experimental results show that the local deformations, scratch wear, and flaws are produce the non-uniform coating layers, which may be removed by a manufacturing process of an aluminum tube. The major parameters on the coating quality of an OPC drum are the impurities of an aluminum tube such as silicon, oxygen, calcium, carbon, sulphur, chlorine, and others. These impurities may be removed by an ingot molding, extrusion and drawing, quality control, and packing processes with a strict manufacturing technology.

• 대한기계학회논문집B
• /
• 제37권9호
• /
• pp.823-828
• /
• 2013

실리콘 태양전지의 두께를 줄일 경우 여러 문제점이 발생하게 되는데 그 중에서 태양전지의 휨 현상은 제품 수율의 직접적인 원인이 되어 제품 상용화에 가장 큰 걸림돌이 되고 있다. 본 연구에서는 태양전지의 실리콘 웨이퍼 두께를 가변하였을 때의 휨 정도에 대해 정밀하게 측정하고자 하였다. 측정결과의 신뢰성을 높이고 비 대칭성 형상에 대해 자세하고 정밀하게 분석하기 위해 3D 이미지 스캐너를 사용하였다. 그 결과 실리콘 웨이퍼의 두께가 감소할수록 휨 정도는 급격하게 증가하고 곡률 또한 증가하는 것을 확인할 수 있었다. 실리콘 웨이퍼의 두께가 감소할 수록 휨 정도의 편차가 증가하여 형상의 비 대칭성이 증가하는 것 또한 확인되었다. 또한 Ag 전극의 부착이 휨 현상을 어느 정도 감소시키는 것을 알 수 있었다.

• 한국재료학회지
• /
• 제22권4호
• /
• pp.190-194
• /
• 2012

The formation of high-quality polycrystalline silicon (poly-Si) on relatively low cost substrate has been an important issue in the development of thin film solar cells. Poly-Si seed layers were fabricated by an inverse aluminum-induced crystallization (I-AIC) process and the properties of the resulting layer were characterized. The I-AIC process has an advantage of being able to continue the epitaxial growth without an Al layer removing process. An amorphous Si precursor layer was deposited on Corning glass substrates by RF magnetron sputtering system with Ar plasma. Then, Al thin film was deposited by thermal evaporation. An $SiO_2$ diffusion barrier layer was formed between Si and Al layers to control the surface orientation of seed layer. The crystallinity of the poly-Si seed layer was analyzed by Raman spectroscopy and x-ray diffraction (XRD). The grain size and orientation of the poly-Si seed layer were determined by electron back scattering diffraction (EBSD) method. The prepared poly-Si seed layer showed high volume fraction of crystalline Si and <100> orientation. The diffusion barrier layer and processing temperature significantly affected the grain size and orientation of the poly Si seed layer. The shorter oxidation time and lower processing temperature led to a better orientation of the poly-Si seed layer. This study presents the formation mechanism of a poly seed layer by inverse aluminum-induced crystallization.

• 동력기계공학회지
• /
• 제17권1호
• /
• pp.110-115
• /
• 2013

The electrochemical performance and microstructure of Al-Si, Al-Si/C was investigated as anode for lithium ion battery. The Al-Si nano composite with 5 : 1 at% ratio was prepared by arc-discharge nano powder process. However, some of problem is occurred, when Al nano composite was synthesized by this manufacturing. The oxidation film is generated around Al-Si particles for passivating processing in the manufacture. The oxidation film interrupts electrical chemistry reaction during lithium ion insertion/extraction for charge and discharge. Because of the existence the oxidation film, Al-Si first cycle capacity is very lower than other examples. Therefore, carbon synthsized by glucose ($C_6H_{12}O_6$) was conducted to remove the oxidation film covered on the composite. The results showed that the first discharge cycle capacity of Al-Si/C is improved to 113mAh/g comparing with Al-Si (18.6mAh/g). Furthermore, XRD data and TEM images indicate that $Al_4C_3$ crystalline exist in Al-Si/C composite. In addition the Si-Al anode material, in which silicon is more contained was tested by same method as above, it was investigated to check the anode capacity and morphology properties in accordance with changing content of silicon, Si-Al anode has much higher initial discharge capacity(about 500mAh/g) than anode materials based on Aluminum as well as the morphology properties is also very different with the anode based Aluminum.

• 반도체디스플레이기술학회지
• /
• 제1권1호
• /
• pp.9-13
• /
• 2002

A polyimide-type electrostatic chuck (ESC) was fabricated for the application of holding 8-inch silicon wafers in the oxide etching equipment. For the fabrication of the unipolar ESC, core technologies such as coating of polyimide films and anodizing treatment of aluminum surface were developed. The polyimide films were prepared on top of thin coated copper substrates for the good electrical contacts, and the helium gas cooling technique was used for the temperature uniformity of the silicon wafers. The ESC was essentially working with an unipolar operation, which was easier to fabricate and operate compared to a bipolar operation. The chucking force of the ESC has been measured to be about 580 gf when the applied voltage was 1.5 kV, which was considered to be enough force to hold wafers during the dry etching processing. The employment of the ESC in etcher system could make 8% enhancement of the wafer processing yield.

• 반도체디스플레이기술학회지
• /
• 제14권4호
• /
• pp.45-49
• /
• 2015

Using a combined CVD and ALD equipment system, multi-layer quantum well structures of $Al_2O_3/a-Si/Al_2O_3$ were fabricated on silicon Schottky junction devices and implemented to quantum well solar cells, in which the 1~1.5 nm thicknesses of the aluminum oxide films and the a-Si thin film layers were deposited at $300^{\circ}C$ and $450^{\circ}C$, respectively. Fabricated solar cell was operated by tunneling phenomena through the inserted quantum well structure being generated electrons on the silicon surface. Efficiency of the fabricated solar cell inserted with multi-quantum well of 41 layers has been increased by about 10 times that of the solar cell of pure Schottky junction solar cell.