• Title/Summary/Keyword: aluminum oxide layer

Search Result 256, Processing Time 0.029 seconds

Fabrication of Alumina Membrane Using Anodic Oxidation Process (양극산화를 이용한 알루미나 나노세공 멤브레인의 제조)

  • Im, W.S.;Cho, K.C.;Cho, Y.S.;Choi, G.S.;Kim, D.J.
    • Korean Journal of Materials Research
    • /
    • v.13 no.9
    • /
    • pp.593-597
    • /
    • 2003
  • Anodic aluminum oxide (AAO) membrane was made of aluminum sheet (99.6%, 0.2 mm thickness). The regular array of hexagonal nano pores or channels were prepared by two step anodization process. A detail description of the AAO fabrication is presented. After the 1st anodization in oxalic acid (0.3 M) at 45 V, The formed AAO was removed by etching in a solution of 6 wt% $H_3$$PO_4$+1.8 wt% $H_2$$CrO_4$. The regular arrangement of the pores was obtained by the 2nd anodization, which was carried out in the same condition as the 1st anodization. Subsequently, the alumina barrier layer at the bottom of the channel layer was removed in phosphoric acid (1M) after removing of aluminum. Pore diameter, density, and thickness could be controlled by the anodization process parameters such as applied voltage, anodizing time, pore widening time, etc. The pore diameter is proportional to the applied voltage and pore widening time. The pore density and thickness can be controlled by anodization temperature and voltage.

Fitting accuracy of ceramic veneered Co-Cr crowns produced by different manufacturing processes

  • von Maltzahn, Nadine Freifrau;Bernhard, Florian;Kohorst, Philipp
    • The Journal of Advanced Prosthodontics
    • /
    • v.12 no.2
    • /
    • pp.100-106
    • /
    • 2020
  • PURPOSE. The purpose of this in vitro study was to evaluate the fitting accuracy of single crowns made from a novel presintered Co-Cr alloy prepared with a computer-aided design and computer-aided manufacturing (CAD/CAM) technique, as compared with crowns manufactured by other digital and the conventional casting technique. Additionally, the influence of oxide layer on the fitting accuracy of specimens was tested. MATERIALS AND METHODS. A total of 40 test specimens made from Co-Cr alloy were investigated according to the fitting accuracy using a replica technique. Four different methods processing different materials were used for the manufacture of the crown copings (milling of presintered (Ceramill Sintron-group_cer_sin) or rigid alloy (Tizian NEM-group_ti_nem), selective laser melting (Ceramill NPL-group_cer_npl), and casting (Girobond NB-group_gir_nb)). The specimens were adapted to a resin model and the outer surfaces were airborne-particle abraded with aluminum oxide. After the veneering process, the fitting accuracy (absolute marginal discrepancy and internal gap) was evaluated by the replica technique in 2 steps, before removing the oxide layer from the intaglio surface of the crowns, and after removing the layer with aluminum oxide airborne-particle abrasion. Statistical analysis was performed by multifactorial analysis of variance (ANOVA) (α=.05). RESULTS. Mean absolute marginal discrepancy ranged between 20 ㎛ (group_cer_npl for specimens of Ceramill NPL) and 43 ㎛ (group_cer_sin for crowns of Ceramill Sintron) with the oxide layer and between 19 ㎛ and 28 ㎛ without the oxide layer. The internal gap varied between 33 ㎛ (group_ti_nem for test samples of Tizian NEM) and 75 ㎛ (group_gir_nb for the base material Girobond NB) with the oxide layer and between 30 ㎛ and 76 ㎛ without the oxide layer. The absolute marginal discrepancy and the internal gap were significantly influenced by the fabrication method used (P<.05). CONCLUSION. Different manufacturing techniques had a significant influence on the fitting accuracy of single crowns made from Co-Cr alloys. However, all tested crowns showed a clinically acceptable absolute marginal discrepancy and internal gap with and without oxide layer and could be recommended under clinical considerations. Especially, the new system Ceramill Sintron showed acceptable values of fitting accuracy so it can be suggested in routine clinical work.

De-icing of the hydrophobic treated nanoporous anodic aluminum oxide layer (소수성 처리된 나노다공성 알루미늄 양극산화피막의 제빙)

  • Shin, Yeji;Kim, Jinhui;Shin, Dongmin;Moon, Hyung-Seok;Lee, Junghoon
    • Journal of the Korean institute of surface engineering
    • /
    • v.54 no.5
    • /
    • pp.222-229
    • /
    • 2021
  • Icing causes various serious problems, where water vapor or water droplets adhere at cold conditions. Therefore, understanding of ice adhesion on solid surface and technology to reduce de-icing force are essential for surface finishing of metallic materials used in extreme environments and aircrafts. In this study, we controlled wettability of aluminum alloy using anodic oxidation, hydrophobic coating and lubricant-impregnation. In addition, surface porosity of anodized oxide layer was controlled to realize superhydrophilicity and superhydrophobicity. Then, de-icing force on these surfaces with a wide range of wettability and mobility of water was measured. The results show that the enhanced wettability of hydrophilic surface causes strong adhesion of ice. The hydrophobic coating on the nanoporous anodic oxide layer reduces the adhesion of ice, but the volume expansion of water during the freezing diminishes the effect. The lubricant-impregnated surface shows an extremely low adhesion of ice, since the lubricant inhibits the direct contact between ice and solid surface.

Surface analysis of reactively ion-etched aluminum films in $CF_4$ plasma ($CF_4$ 플라즈마에서 반응성 이온식각한 알루미늄 박막의 표면분석)

  • 김동원;이원종
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.5 no.4
    • /
    • pp.351-357
    • /
    • 1995
  • The surface layer of the aluminum film reactively ion etched in $CF_4$ plasma was ana alyzed by using XPS. $AlF_3$ which is nonvolatile is formed at the aluminum surface. As the analyzed depth increases, the intensity of the $Al_{2p}$ peak of Al - F bonds decreases while that of a aluminum metallic bond increases. The thickness of the $AlF_x$ surface layer is 50~100 $\AA$ and the deep penetration of fluorine atoms is attributed to the mixing effect by the bombardment of incident particles. For the aluminum oxide film which is etched in $CF_4$ plasma under the same conditions, oxygen atoms are substituted by fluorine atoms to form $$AIF_x$ surface layer, which is m much thinner than that formed on aluminum surface.

  • PDF

Enhanced Properties of Aluminum Oxide Layers with Post Heat Treatment (후열처리에 의한 알루미늄 산화층의 특성 향상)

  • Jeon, Yoonnam;Kim, Sangjun;Park, Jihyun;Jeong, Nagyeom
    • Journal of the Korean institute of surface engineering
    • /
    • v.52 no.5
    • /
    • pp.275-281
    • /
    • 2019
  • Anodization is widely used to enhance the properties of aluminum, such as hardness, electric resistance, abrasion resistance, corrosion resistance etc. But these properties can be enhanced with additional process. According to the partial crystallization of oxide layer with post heat treatment, enhanced hardness can be expected with partial crystallization. In this study, post heat treatments were applied to the anodized aluminum alloys of Al6061 to achieve the partial crystallization, and crystallizations were evaluated with the reduced breakdown voltages. Interestingly, remarkable enhanced hardness (21~29%), abrasion resistance (26~62%), and reduced breakdown voltage (24~44%) were observed for the sulfuric acid anodized samples when we annealed the anodized samples with 1hour post heat treatment at $360^{\circ}C$. For the Al5052 alloys, a lot of cracks were observed when we applied the post heat treatment.

Atomic-Layer Etching of High-k Dielectric Al2O3 with Precise Depth Control and Low-Damage using BCl3 and Ar Neutral Beam

  • Kim, Chan-Gyu;Min, Gyeong-Seok;Yeom, Geun-Yeong
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2012.02a
    • /
    • pp.114-114
    • /
    • 2012
  • Metal-oxide-semiconductor field-effect transistors (MOSFETs)의 critical dimension (CD)가 sub 45 nm로 줄어듬에 따라 기존에 gate dielectric으로 사용하고 있는 SiO2에서 발생되는 high gate leakage current 때문에 새로운 high dielectric constant (k) 물질들이 연구되기 시작하였다. 여러 가지 high-k 물질 중에서, aluminum-oxide (Al2O3)는 높은 dielectric constant (~10)와 전자 터널링 barrier height (~2eV) 등을 가지기 때문에 많은 연구가 되고 있다. 그러나 Al2O3를 anisotropic한 patterning을 하기 위해 주로 사용되고 있는 halogen-based 플라즈마 식각 과정에서 나타나는 Al2O3와 하부 layer간의 낮은 식각 selectivity 뿐만 아니라 표면에 발생되는 defect, stoichiometry modification, roughness 변화 등의 많은 문제점들로 인하여 device performance가 감소하기 때문에 이를 해결하기 위한 많은 연구들이 진행중이다. 따라서 본 연구에서는 실리콘 기판위의 atomic layer deposition (ALD)로 증착된 Al2O3를 BCl3/Ar 중성빔을 이용하여 원자층 식각한 후 식각 특성을 분석해 보았다. Al2O3 표면을 BCl3로 absorption시킨 후 Ar 중성빔으로 desorption 시키는 과정에서 volatile한 aluminum-chlorides와 boron oxychloride가 형성되어 layer by layer로 제거됨을 관찰 할 수 있었다.

  • PDF

Adhesion of Model Molecules to Metallic Surfaces, the Implications for Corrosion Protection

  • de Wit, J.H.W.;van den Brand, J.;de Wit, F.M.;Mol, J.M.C.
    • Corrosion Science and Technology
    • /
    • v.7 no.1
    • /
    • pp.50-60
    • /
    • 2008
  • The majority of the described experimental results deal with relatively pure aluminium. Variations were made in the pretreatment of the aluminum substrates and an investigation was performed on the resulting changes in oxide layer composition and chemistry. Subsequently, the bonding behavior of the surfaces was investigated by using model adhesion molecules. These molecules were chosen to represent the bonding functionality of an organic polymer. They were applied onto the pretreated surfaces as a monolayer and the bonding behavior was studied using infrared reflection absorption spectroscopy. A direct and clear relation was found between the hydroxyl fraction on the oxide surfaces and the amount of molecules that subsequently bonded to the surface. Moreover, it was found that most bonds between the oxide surface and organic functional groups are not stable in the presence of water. The best performance was obtained using molecules, which are capable of chemisorption with the oxide surface. Finally, it was found that freshly prepared relatively pure aluminum substrates, which are left in air, rapidly lose their bonding capacity towards organic functional groups. This can be attributed to the adsorption of contamination and water to the oxide surface. In addition the adhesion of a typical epoxy-coated aluminum system was investigated during exposure to water at different temperatures. The coating was found to quite rapidly lose its adhesion upon exposure to water. This rapid loss of adhesion corresponds well with the data where it was demonstrated that the studied epoxy coating only bonds through physisorptive hydrogen bonding, these bonds not being stable in the presence of water. After the initial loss the adhesion of the coating was however found to recover again and even exceeded the adhesion prior to exposure. The improvement could be ascribed to the growth of a thin oxyhydroxide layer on the aluminum substrate, which forms a new, water-stable and stronger bond with the epoxy coating. Two routes for improvement of adhesion are finally decribed including an interphasial polymeric thin layer and a treatment in boiling water of the substrate before coating takes place. The adhesion properties were finely also studied as a function of the Mg content of the alloys. It was shown that an enrichment of Mg in the oxide could take place when Mg containing alloys are heat-treated. It is expected that for these alloys the (hydr)oxide fraction also depends on the pre-treatment and on the distribution of magnesium as compared to the aluminium hydroxides, with a direct impact on adhesive properties.

Fabrication of top gate Graphene Transistor with Atomic Layer Deposited $Al_2O_3$

  • Kalode, Pranav;Seong, Myeong-Mo
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2013.08a
    • /
    • pp.212-212
    • /
    • 2013
  • We fabricate and characterize top gate Graphene transistor using aluminum oxide as a gate insulator by atomic layer deposition (ALD). It is found that due to absence of functional group and dangling bonds, ALD of metal oxide is difficult on Graphene. Here we used 4-mercaptopheneol as a functionalization layer on Graphene to facilitate uniform oxide coverage. Contact angle measurement and Atomic force microscopy were used to confirm uniform oxide coverage on Graphene. Raman spectroscopy revealed that functionalization with 4-mercaptopheneol does not induce any defect peak on Graphene. Our device shows mobility values of 4,000 $cm^2/Vs$ at room temperature which also suggest top gate stack does not significantly increase scattering. The noncovalent functionalization method is non-destructive and can be used to grow ultra-thin dielectric for future Graphene applications.

  • PDF

Deposition of Electrolyte for Intermediate Temperature Solid Oxide Fuel Cells by Combined Thin Film Deposition Techniques (복합 박막 증착 공정을 이용한 중저온 고체산화물 연료전지용 전해질 증착)

  • Ha, Seungbum;Jee, Sanghoon;Tanveer, Waqas Hassan;Lee, Yoonho;Cha, Suk Won
    • 한국신재생에너지학회:학술대회논문집
    • /
    • 2011.11a
    • /
    • pp.84.1-84.1
    • /
    • 2011
  • Typical solid oxide fuel cells (SOFCs) have limited applications because they operate at high temperature due to low ionic conductivity of electrolyte. Thin film solid oxide fuel cell with yttria stabilized zirconia (YSZ) electrolyte is developed to decrease operating temperature. Pt/YSZ/Pt thin film SOFC was fabricated on anodic aluminum oxide (AAO). The crystalline structure of YSZ electrolyte by sputter is heavily depends on the roughness of porous Pt layer, which results in pinholes. To deposit YSZ electrolyte without pinholes and electrical shortage, it is necessary to deposit smoother and denser layer between Pt anode layer and YSZ layer by sputter. Atomic Layer Deposition (ALD) technique is used to deposit pre-YSZ layer, and it improved electrolyte quality. 300nm thick Bi-layered YSZ electrolyte was successfully deposited without electrical shortage.

  • PDF

The Fabrication of Flow Sensors Using Pt Micro Heater (백금 미세발열체를 이용한 유량센서의 제작)

  • Noh, Sang-Soo;Chung, Gwiy-Sang
    • Proceedings of the KIEE Conference
    • /
    • 1997.11a
    • /
    • pp.609-611
    • /
    • 1997
  • Pt thin films flow sensors were fabricated by using aluminum oxide films as medium layer and their characteristics were investigated after annealing at $600^{\circ}C$ for 60min. Aluminum oxide improved adhesion of Pt thin films to $SiO_2$ layer without any chemical reactions to Pt thin films under high annealing temperatures. Output voltages increased as gas flow rate and gas conductivity increased because heat loss of heater, which was integrated with a sensing resistor in the flow sensor, increased. Output voltage of flow sensor fabricated on membrane structure was 101mV at $O_2$ flow rate of 2000sccm, heating power of 0.8W while flow sensor fabricated on Si substrate without membrane had output voltage of 78mV under the same conditions.

  • PDF