• Korean Journal of Materials Research
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• v.27 no.6
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• pp.295-300
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• 2017

Aluminum-oxide($Al_2O_3$) thin films were deposited by electron cyclotron resonance plasma-enhanced atomic layer deposition at room temperature using trimethylaluminum(TMA) as the Al source and $O_2$ plasma as the oxidant. In order to compare our results with those obtained using the conventional thermal ALD method, $Al_2O_3$ films were also deposited with TMA and $H_2O$ as reactants at $280^{\circ}C$. The chemical composition and microstructure of the as-deposited $Al_2O_3$ films were characterized by X-ray diffraction(XRD), X-ray photo-electric spectroscopy(XPS), atomic force microscopy(AFM) and transmission electron microscopy(TEM). Optical properties of the $Al_2O_3$ films were characterized using UV-vis and ellipsometry measurements. Electrical properties were characterized by capacitance-frequency and current-voltage measurements. Using the ECR method, a growth rate of 0.18 nm/cycle was achieved, which is much higher than the growth rate of 0.14 nm/cycle obtained using thermal ALD. Excellent dielectric and insulating properties were demonstrated for both $Al_2O_3$ films.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.157-160
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• 2021

As an insulator for a thin film transistor(TFT) and an encapsulation material of organic light emitting diode(OLED), aluminum oxide (Al₂O₃) has been widely studied using several technologies. Especially, in spite of low deposition rate, atomic layer deposition (ALD) has been used as a process method of Al₂O₃ because of its low process temperature and self-limiting reaction. In the Al₂O₃ deposition by ALD method, Ar Purge had some crucial effects on the film properties. After reaction gas is injected as a formation of pulse, an inert argon(Ar) purge gas is injected for gas desorption. Therefore, the process parameter of Ar purge gas has an influence on the ALD deposited film quality. In this study, Al₂O₃ was deposited on glass substrate at a different Ar purge time and its structural characteristics were investigated and analyzed. From the results, the growth rate of Al₂O₃ was decreased as the Ar purge time increases. The surface roughness was also reduced with increasing Ar purge time. In order to obtain the high quality Al₂O₃ film, it was known that Ar purge times longer than 15 sec was necessary resulting in the self-limiting reaction.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.673-677
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• 1996

Copper phthalocyanine(CuPc) thick film solar cells were fabgricated byspin coating and their photovoltaic behavior was studied. Polyvinylidene fluoride (PVdF) was used for the binder. Aluminum and indium were employed as electrode metals to form Schottky contact to CuPc layer. The cells showed rectifying J-V characteristics in the dark and photovoltaic effect associated with white light irradiation. The photovoltaic performance of the cells strongly depended on contact metals, in which the formation of oxide layer between binder layer and electrode interface affected the solar cell. Influnce of the CuPc layer thickness, CuPc/PVdF ratio on the photovoltaic performance of the cells were also examined.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.135-136
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• 2011

본 연구에서는 실리콘 기판위의 형성된 AAO (Anodic Aluminum Oxide)의 barrier layer를 $Cl_2/BCl_3$ gas mixture에서 Neutral Beam Etching (NBE)과 Ion Beam Etching (IBE)로 각각 식각한 후 그 결과를 비교하였다. 이온빔의 경우 나노사이즈의 AAO pore의 charging에 의해 pore 아래쪽의 위치한 barrier layer를 어떤 식각조건에서도 제거하지 못하였다. 하지만, charging effect가 없고, 높은 중성화율을 나타내는 low angle forward reflected 방식의 neutral beam etching (NBE)에서는 $BCl_3$-rich $Cl_2/BCl_3$ gas mixture인 식각조건에서 AAO pore에 휘발성 $BO_xCl_y$를 형성하면서 barrier layer를 제거할 수 있었다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.128-129
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• 2015

Al-rich coatings were prepared on hot rolled low carbon steel by hot dipping method in molten Al-bath to investigate the corrosion resistance with the possible outcomes and defects of aluminized coatings in air and $Ar-0.2%SO_2$ mixed gases. Coating microstructure was composed of an inner Al-Fe intermetallic layer and outer Al-rich layer. Aluminum oxidized preferentially to the thin, outer, protective ${\alpha}-Al_2O_3$ layer, without forming the nonprotective iron/sulfur-oxide layer after heating at $800^{\circ}C$ for 20 h, in both the gases and provided the resistance against corrosion.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.122-122
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• 2015

Al-rich coatings were prepared on hot rolled low carbon steel by hot dipping method in molten Al-bath to investigate the corrosion resistance with the possible outcomes and defects of aluminized coatings in air and $Ar-0.2%SO_2$ mixed gases. Coating microstructure was composed of an inner Al-Fe intermetallic layer and outer Al-rich layer. Aluminum oxidized preferentially to the thin, outer, protective ${\alpha}-Al_2O_3$ layer, without forming the nonprotective iron/sulfur-oxide layer after heating at $800^{\circ}C$ for 20h, in both the gases and provided the resistance against corrosion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.53-56
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• 2002

The effect of $\alpha$-septithiophene (${\alpha}-7T$) layers on the organic light emitting diode(OLED) was studied. The ${\alpha}-7T$ was used for a buffer layer in OLED. Hole injection was investigated and improved emission efficiency. The OLEDs structure can be described as indium tin oxide(ITO)/ buffer layer / hole transporting layer / emitting layer / electron transporting layer / LiF / Al. The hole transporting layer were composed of N,N-diphenyl-N,N-di(3-methylphenyl)-1,1-biphenyl-4,4-diamine(TPD), and N,N-di(naphthalene-1-ly)-N,N-diphenyl-benzidine( ${\alpha}$-NPD). The emitting layer, and electron transporting layer consist of tris(8-hydroxyquinolinato) aluminum($Alq_3$). All organic layer were deposited at a background pressure of less than $10^{-6}$ torr using ultra high vacuum (UHV) system. The ${\alpha}-7T$ layer can substitute the hole blocking layer, and improve hole injection properties.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.907-910
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• 1997

With increasing the needs for micro and precision parts, micro machining technology has been studied to fabricate a small part with high density such as electronics, optics, communications, and medicine industry more than before. But there are many problems to be solved requiring a high-level technology. So this research presents the new method to fabricate a small part through applying chemical mechanical micro machining (C3M) for the Al wafer. Al(thickness I ,u m) was sputtered on the Si substrate. Al is widely used as a lightweight material. However form defect such as burr has a bad effect on products. To improve machinability of ductile material, oxide layer was formed on the surface of AI wafcr before grooving by chemical reaction with HN03(10wt%). And then workpieces were machined to compare conventional micro-machining process with newly suggested method at different machining condition such as load and feed rate. To evaluate whether or not the machinability was improved by the effect of chemical condition, such as the size, the width of grooves 'and burr generation were measured. Finally, it is confirmed that C3M is one of the feasible tools for micro machining with the aid of effect of the chemical reaction.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.37 no.5
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• pp.625-630
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• 2013

The friction behavior of a 60-${\mu}m$-thick anodic aluminum oxide (AAO) film having cylindrical nanopores of 45-nm diameter was investigated as a function of impregnated oil viscosity ranging from 3.4 to 392.6 cSt. Reciprocating ball-on-flat sliding friction tests using a 1-mm-diameter steel ball as the counterpart were carried out with normal load ranging from 0.1 to 1 N in an ambient environment. The friction coefficient significantly decreased with an increase in the oil viscosity. The boundary lubrication film remained effectively under all test conditions when high-viscosity oil was impregnated, whereas it was easily destroyed when low-viscosity oil was impregnated. Thin plastic deformed layer patches were formed on the worn surface with high-viscosity oil without evidence of tribochemical reaction and transfer of counterpart material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.444-445
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• 2007

Aluminum-doped zinc oxide (AZO) films are attractive materials as transparent conductive electrode because they are inexpensive, nontoxic and abundant element compared with indium tin oxide (ITO). AZO films have been deposited on glass (coming 1737) substrates by RF magnetron sputtering system. An ultrathin layer of nickel oxide (NiO) was deposited on the AZO anode to enhance the hole injections in organic light-emitting diodes (OLED). The current density-voltage and luminescence-voltage properties of devices were studied and compared with ITO device.