• Journal of the Korean Ceramic Society
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• v.40 no.8
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• pp.720-724
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• 2003

Aluminum nitride (AlN) powders were synthesized by using a mixture of an aluminum nitrate or sulfate salt and carbon (mole ratio of $Al^{3+}$ to carbon=L : 30). The AlN was obtained by calcining the mixture under a flow of nitrogen in the temperature range 1100-1$600^{\circ}C$ and then burning out the residual carbon. The process of conversion of the salt to AlN was monitored by XRD and $^{27}$ Al magic-angle spinning (MAS) NMR spectroscopy. The salt decomposed to ${\gamma}$-alumina and then converted to AlN without phase transition from ${\gamma}$-to-$\alpha$-alumina. $^{27}$ Al MAS NMR spectroscopy shows that the formation of AlN commenced at 110$0^{\circ}C$. AlN powders obtained from the sulfate salt were superior to those from the nitrate salt in terms of homogeneity and crystallinity. A very small amount of AlN whiskers was obtained by calcining a mixture of an aluminum sulfate salt and carbon at 115$0^{\circ}C$ for 40 h, and the growth of the whiskers is well explained by the particle-to-particle self-assembly mechanism.

• Korean Journal of Materials Research
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• v.16 no.12
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• pp.771-776
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• 2006

In this study, we report a method to synthesize the aluminum nitride (AlN) powders from aluminum oxyhydroxide (AlOOH). AlOOH powders were prepared from the aluminum hydroxide ($Al(OH)_3$) by heattreatment at the reaction temperature of $350^{\circ}C$. Simple heat treatment of AlOOH in the flow of $NH_3$ gas leads to the formation of hexagonal AlN powders through intermediate conversion of ${\delta}-,\;{\gamma}-$ and ${\alpha}-Al_2O_3$. The FTIR transmission spectra show a broad peak related to Al-N bonds centered around 690 $cm^{-1}$ confirming the presence of AlN. The major peaks in Raman spectra were observed in 250 $cm^{-1}$ and 659 $cm^{-1}$. From the results, synthesized powders from the AlOOH powders were confirmed AlN powders.

• Electronic Materials Letters
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• v.14 no.6
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• pp.784-792
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• 2018

In this letter, a standard deviation based optimization technique has been applied on High Resolution X-ray Diffraction symmetric and asymmetric scan results to accurately determine the Aluminum molar fraction and lattice relaxation of Molecular Beam Epitaxy grown compositionally graded Aluminum Gallium Nitride (AlGaN)/Aluminum Nitride/Gallium Nitride (GaN) heterostructures. Mathews-Blakeslee critical thickness model has been applied in an alternative way to determine the partially relaxed AlGaN epilayer thicknesses. The coupling coefficient determination has been presented in a different perspective involving sample tilt method by off set between the asymmetric planes of GaN and AlGaN. Sample tilt is further increased to determine mosaic tilt ranging between $0.01^{\circ}$ and $0.1^{\circ}$.

• Journal of Powder Materials
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• v.11 no.4
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• pp.294-300
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• 2004

This study for preparation of aluminum nitride (AlN) with high purity was carried out by self-propagating high-temperature synthesis method in two different systems, $Al-N_{2}$ and $Al-N_{2}$-AlN, with the change of nitrogen gas pressure and dilution factor. On the occasion of $Al-N_{2}$ system, unreacted aluminum was detected in the product in spite of high nitrogen pressure, 10 MPa, This may be caused by obstructing nitrogen gas flow to inner part of molten and agglomerate of aluminum, formed in pre-heating zone. In $Al-N_{2}$-AlN system, AlN with a purity of 95% or ever can be prepared in the condition of $f_{Dil}\geq0.5$, $P_{N_{2}}\geq$ 1 MPa, and the purity can be elevated to 98% over in the condition of $f_{Dil}$ = 0.7 and $P_{N_{2}}$ = 10 MPa.

• Transactions of Materials Processing
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• v.29 no.1
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• pp.44-48
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• 2020

Aluminum nitride (AlN), as a substrate material in electronic packaging, has attracted considerable attention over the last few decades because of its excellent properties, which include high thermal conductivity, a coefficient of thermal expansion that matches well with that of silicon, and a moderately low dielectric constant. AlN films with c-axis orientation and thermal conductivity characteristics were deposited by using Pulsed Laser Deposition (PLD). The epitaxial AlN films were grown on sapphire (c-Al₂O₃) single crystals by PLD with AlN target and Y₂O₃ doped AlN target. A comparison of different targets associated with AlN films deposited by PLD was presented with particular emphasis on thermal conductivity properties. The quality of AlN films was found to strongly depend on the growth temperature that was exerted during deposition. AlN thin films deposited using Y₂O₃-AlN targets doped with sintering additives showed relatively higher thermal conductivity than while using pure AlN targets. AlN thin films deposited at 600℃ were confirmed to have highly c-axis orientation and thermal conductivity of 39.413 W/mK.

• Journal of the Korean Ceramic Society
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• v.22 no.6
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• pp.80-86
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• 1985

Aluminum nitride (AlN) was synthesized from aluminum (Al) powders as a starting material in the tempe-rature range of 450~1, 15$0^{\circ}C$ in the presence of 90% $N_2$-10%$H_2$ gases. The thermogravimentric analysis showed that the nitridation of Al powders started at about 43$0^{\circ}C$ and escalated greatly from 53$0^{\circ}C$. The scanning electron microcopic observation revealed that AlN crystals were different in shape with varying temperature of nitridation. The crystals of AlN which were formed in the lower temperature than the melting point of Al were spherical while those of AlN in the higher temperature were fibrous. The yield of AlN was determined quantitatively by both XRD method and weight gain between before and after the nitridation of Al compacts. It was considered that the former was available for the specimen which was made in the high nitriding temperature. But the latter was unavilable for the same one probably because of the volatile loss of Al in the higher temperature.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1294-1295
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• 2006

Various reactions and the in-situ formation of new phases can occur during the mechanical alloying process. In the present study, Al powders were strengthened by AlN, using the in-situ processing technique during mechanical alloying. Differential thermal analysis and X-ray diffraction studies were carried out in order to examine the formation behavior of AlN. It was found that the precursors of AlN were formed in the Al powders and transformed to AlN at temperatures above $600^{\circ}C$. The hot extrusion process was utilized to consolidate the composite powders. The microstructure of the extrusions was examined by SEM and TEM. In order to investigate the mechanical properties of the extrusions, compression tests and hardness measurements were carried out. It was found that the mechanical properties and the thermal stability of the Al/AlN composites were significantly greater than those of conventional Al matrix composites.

• Journal of the Korean Ceramic Society
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• v.41 no.2
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• pp.118-124
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• 2004

The properties of AlN made by carbothermal reaction depend on the starting materials, quantity of liquid, the liquid-vapor phase reaction, the N$_2$ flow rate, and the reaction temperature. AlN whisker was synthesized by the VLS and VS methods. Solid ${\alpha}$-A1$_2$O$_3$(AES-11) was carbothermally reduced with carbon black in a high-purity N$_2$ atmosphere with AlF$_3$ to cause whisker grown and additional aluminum liquid to increase whisker yield. Aluminum nitride was perfectly formed at reaction temperatures of 1600$^{\circ}C$. At reaction temperature higher than 1600$^{\circ}C$ the aluminum nitride was completely formed, while the composition remains unaffected. Needle-shaped whiskers formed best at 1600$^{\circ}C$ while higher temperatures disrupted whisker formation. Adding 0 to 15 wt% aluminum to the synthesis favorably affects the microstructure for formation of needle-shaped AlN whisker. Additions over 15 wt% degraded formation of AlN whisker.

• Journal of the Korean Ceramic Society
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• v.39 no.3
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• pp.272-277
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• 2002

Aluminum nitride (AlN) powders and whiskers were synthesized by a modified carbothermal reduction and nitridation where a ($NH_4)[Al(ethylenediaminetetraacetate)]{\cdot}2H_2O$ complex is used as precursor. The AlN powders were obtained by calcining the complex without mixing any carbon source under a flow of nitrogen in the temperature range 1200∼1500$^{\circ}$C and then burning out the residual carbon. The nitridation process was investigated by $^{27}Al$ magic-angle spinning (MAS) unclear magnetic resonance, infrared spectroscopy and X-ray diffraction. The complex is pyrolyzed, converted to ${\rho}$- and ${\gamma}$- alumina and then nitridated to AlN without ${\gamma}-{\alpha}$ alumina transition. The morphology of ${\gamma}$-alumina, when it was converted to AlN, was retained, strongly indicating that ${\gamma}$-alumina is converted to AlN through solid-state $AlO_xN_y$, not through gaseous intermediates such as aluminum and aluminaum suboxides. AlN whiskers were obtained, when a (0001) sapphire was used as a catalyst.

• Journal of the Korean institute of surface engineering
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• v.39 no.5
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• pp.235-239
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• 2006

The aluminum nitride(AlN) layer on Al7075 substrate has been formed through nitrogen ion implantation process. The implantation process was performed under the conditions : 100 keV energy, total ion dose up to $2{\times}10^{18}\;ions/cm^2$. XRD analysis showed that aluminum nitride layers were formed by nitrogen implantation. The formation of Aluminum nitride enhanced surface hardness up to 265HK(0.02 N) from 150HK(0.02 N) for the unimplanted specimen. Micro-Knoop hardness test showed that wear resistance was improved about 2 times for nitrogen implanted specimens above $5\;{\times}\;10^{17}\;ions/cm^2$. The friction coefficient was measured by Ball-on-disc type wear tester and was decreased to 1/3 with increasing total nitrogen ion dose up to $1\;{\times}\;10^{18}ions/cm^2$. The enhancement of mechanical properties was observed to be closely associated with AlN formation. AES analysis showed that the maximum concentration of nitrogen increased as ion dose increased until $5\;{\times}\;10^{17}\;ions/cm^2$.