• The Korean Journal of Nuclear Medicine Technology
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• v.22 no.2
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• pp.67-73
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• 2018

$[^{11}C]PIB$ synthesis has been performed by a loop-methylation and HPLC purification in our lab. However, this method is time-consuming and requires complicated systems. Thus, we developed an on-cartridge method which simplified the synthetic procedure and reduced time greatly by removing HPLC purification step. We compared 6 different cartridges and evaluated the $[^{11}C]PIB$ production yields and specific activities. $[^{11}C]MeOTf$ was synthesized by using TRACERlab FXC Pro and was transferred into the cartridge by blowing with helium gas for 3 min. To remove byproducts and impurities, cartridges were washed out by 20 mL of 30% EtOH in 0.5 M $NaH_2PO_4$ solution (pH 5.1) and 10 mL of distilled water. And then, $[^{11}C]PIB$ was eluted by 5 mL of 30% EtOH in 0.5 M $NaH_2PO_4$ into the collecting vial containing 10 mL saline. Among the 6 cartridges, only tC18 environmental cartridge could remove impurities and byproducts from $[^{11}C]PIB$ completely and showed higher specific activity than traditional HPLC purification method. This method took only 8 ~ 9 min from methylation to formulation. For the tC18 environmental cartridge and conventional HPLC loop methods, the radiochemical yields were $12.3{\pm}2.2%$ and $13.9{\pm}4.4%$, respectively, and the molar activities were $420.6{\pm}20.4GBq/{\mu}mol$ (n=3) and $78.7{\pm}39.7GBq/{\mu}mol$ (n=41), respectively. We successfully developed a facile on-cartridge methylation method for $[^{11}C]PIB$ synthesis which enabled the procedure more simple and rapid, and showed higher molar radio-activity than HPLC purification method.

• Journal of the Korean Society of Hazard Mitigation
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• v.9 no.4
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• pp.107-113
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• 2009

This paper considers the influence of floc on the sedimentation rate for the cohesive material. The effects of floc density and size changes were also taking into consideration during the experiment. The settling velocity of a discrete floc was measured in a quiescent water column. Floc diameter and density were investigated using a modified Stokes equation with some constants such as water density, viscosity, material density and the floc fractal dimension $n_f$ obtained from the relationship between the floc diameter and the floc settling. The floc diameter of quartz and alumina increased at increasing initial concentrations. The floc size of quartz with increasing NaCl concentration varied between approximately 0.8 um to $10{\mu}m$. Floc density decreased as floc size increased. The floc settling velocity and the floc diameter have a straight line relationship on a logarithm. The floc fractal dimension nf was 2.65 with increasing of initial concentration and 2.93 with increasing of NaCl. The exponent n to predict the settling velocity was proposed and varied from 1 to 1.93.

• Journal of the Korean Ceramic Society
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• v.41 no.3
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• pp.253-258
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• 2004

Non-aggregated nanoscale $\alpha$-Al$_2$O$_3$ powders were prepared successfully by polyacrylamine (PAA) gel method. The method was very simple and polymer network inhibited the aggregate of $\alpha$-Al$_2$O$_3$ powders. In this investigation, nanoparticles of $\alpha$-Al$_2$O$_3$ with a diameter of about 8-15 nm were fabricated by calcining the gel precusors with various concentrations of aluminum sulfate, acrylamide and N,N'-methylene-bis-acrylamide (BIS) in air at 110$0^{\circ}C$ for 2 h. The molar ratio of aluminum sulfate to acrylamide did not have any influence on the size of particles. On the other hand, as the molar ratio of BIS to acrylamide increased, the size of nanoparticles decreased.

• Membrane Journal
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• v.22 no.6
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• pp.424-434
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• 2012

In this study, a ceramic membrane was prepared by CVD. Tube type alpha alumina support was used for substrate and added the Ga salt in intermediate layer. Synthesized method was counter diffusion CVD method at $650^{\circ}C$ with tetramethylorthosilane (TMOS). Gas permeation was measured at $600^{\circ}C$ using single-component $H_2$, $N_2$, $CO_2$ and $CH_4$. During the steam treatment, $H_2/N_2$ permselectivity of non-Ga silica membrane was decreased 926 to 829 at $600^{\circ}C$. On the other hand $H_2/N_2$ permselectivity of added Ga silica membrane was stable 910 to 904 at $600^{\circ}C$. These results show that the metal-doped membranes improved steam stability for gas separation.

• Applied Chemistry for Engineering
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• v.10 no.8
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• pp.1099-1103
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• 1999

The surface of an ${\alpha}$-alumina tube was coated with zirconium modified polycarbosilane(PZC) by dip-coating method. Then the tube was pyrolyzed at 573~823 K. The prepared inorganic composite membrane was in $1{\mu}m$ thickness and had no pinholes larger than several nm. For the pyrolyzed inorganic composite membrane, the permeation test of He, $N_2$, $CO_2$, and $O_2$ was performed at 303~423 K. The gas permeation and separation factor were increased with increasing permeation temperature. The permeation for gases was controlled by the activated diffusion mechanism. The separation factor of $CO_2$, to $N_2$was 4.9 at 363 K on the composite membrane pyrolyzed at 823 K and its value was higher than that of He and $O_2$.

• Resources Recycling
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• v.3 no.1
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• pp.17-24
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• 1994

Recovery of precious metal values from petrochemical spent catalyst is important from the viewpoint of environmental protection and resource recycling. Two types of spent catalysts were used in this study. One used in the manufacture of ethylene contains 0.3% Pd in the alumina substrate. The other used in oil refining contains 0.3% Pt and 0.3% Re. Both spent catalysts are roasted to remove volatile matters as carbon and sulfur. Then, metallic Pd powder from Pd spent catalyst is obtained in the course of grinding, hydrochloric acid or aqua regia leaching and cementation with iron. For the recovery of Pt and Re from Pt-Re spent catalyst, Pt and Re are leached with either HCI or aqua regia, first. Metallic Pt powder is recovered from the leach solution by cementation with Fe powder. Re in sulfide form is precipitated by the addition of sodium sulfide to the solution obtained after Pt recovery. It is found that 6N HCI can be successfully used as leaching agent for both types of spent catalyst. 6N HCI is considered to be better than aqua regia in consideration of reagent and equipment cost.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.207-215
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• 2000

Al films on cold-rolled steel sheet have been prepared by vacuum evaporation and arc-induced ion plating, respectively, and the evaporation rate and vapor distribution (thickness distribution over the substrate) have been investigated according to deposition conditions. The arc-induced ion plating (AIIP) method have been employed, which makes use of arc-like discharge current induced by ionization electrode located near the evaporation source. The AIIP takes advantage of high ionization rate compared with conventional ion plating, and can be carried out at low pressure of less than $10^{-4}$ torr. Very high evaporation rate of more than 2.0 mu\textrm{m}$/min could be achieved for Al evaporation using alumina liner by electron beam evaporation. The geometry factor n for the $cos^{n/\phi}$ vapor distribution, which affects the thickness distribution of films at the substrate turned out to be around 1 for vacuum evaporation, while it features around 2 or higher for ion plating. For the ion plated films, it has been found that the ionization condition and substrate bias are the main parameters to affect the thickness distribution of the films.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.3
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• pp.576-583
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• 2018

Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its band gap is larger than that of silicon and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, porous n-type SiC ceramics fabricated from ${\beta}-SiC$ powder have been found to show a high thermoelectric conversion efficiency in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$. For the application of SiC thermoelectric semiconductors, their figure of merit is an essential parameter, and high temperature (above $800^{\circ}C$) electrodes constitute an essential element. Generally, ceramics are not wetted by most conventional braze metals,. but alloying them with reactive additives can change their interfacial chemistries and promote both wetting and bonding. If a liquid is to wet a solid surface, the energy of the liquid-solid interface must be less than that of the solid, in which case there will be a driving force for the liquid to spread over the solid surface and to enter the capillary gaps. Consequently, using Ag with a relatively low melting point, the junction of the porous SiC semiconductor-Ag and/or its alloy-SiC and/or alumina substrate was studied. Ag-20Ti-20Cu filler metal showed promise as the high temperature electrode for SiC semiconductors.

• Journal of the Korean Ceramic Society
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• v.33 no.3
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• pp.285-292
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• 1996

The effect of AlN on the thermal conductivity of aluminum oxide pressurelessly sintered at nitrogen atmos-phere was investigated. Increasing aluminium nitride content up to 1~10 mol% the thermal conductivity of $Al_{2}O_{3}$-AlN system was singnificantly decreased and was constant with adding 20 and 25 mol% aluminium nitride. The thermal conuctivity of $Al_{2}O_{3}$ containing 1~10 mol% the thermal conductivity of $Al_{2}O_{3}$-AlN system was singificantly decreased and was constant with adding 20 and 25mol% aluminum nitride. The thermal conctivity of $Al_{2}O_{3}$ containing 1~10 mol% AlN showed a maximum at $1700^{\circ}C$ and decrea-sed with increasing sintering tempertures. This phenomenon was attributed to $\alpha$-$Al_{2}O_{3}$ and ALON formed by reacting $Al_{2}O_{3}$ with AlN up to $1700^{\circ}C$ and the secondary phases such as ${\gamma}$-ALON ($9Al_{2}O_{3}$.AlN)and $\Phi$($5Al_{2}O_{3}$.AlN) phase above $1750^{\circ}C$ The thermal conductivity of $Al_{2}O_{3}$ containing 20 and 25 mol% AlN showed maximum value at $1800^{\circ}C$ Both $\alpha$-$Al_{2}O_{3}$ and ALON existed up to $1600^{\circ}C$ value at $1800^{\circ}C$ Both $\alpha$-$Al_{2}O_{3}$ and ALON existed up to $1600^{\circ}C$ while only AlON phase existed above $1650^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.6
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• pp.235-242
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• 2018

High temperature electrical conductivity of Aluminum Nitride (AlN) ceramics sintered with $Y_2O_3$ as a sintering aid has been investigated with respect to various sintering conditions and MgO-dopant. When magnesium oxide is added as a dopant, liquid glass-film and crystalline phases such as spinel, perovskite are formed as second phases, which affects their electrical properties. According to high temperature impedance analysis, MgO doping leads to reduction of activation energy and electrical resistivity due to AlN grains. On the other hand, the activation energy and electrical resistivity due to grain boundary were increased by MgO doping. This is a result of the formation of liquid glass film in the grain boundary, which contains Mg ions, or the elevation of schottky barrier due to the precipitation of Mg in the grain boundary. For the annealed sample of MgO doped AlN, the electrical resistivity and activation energy were increased further compared to MgO doped AlN, which results from diffusion of Mg in the grains from grain boundary as shown in the microstructure.