• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.934-937
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• 1999

MMIC 제작을 위한 단일 반도체 공정으로써 PECVD를 이용한 Si₃N₄의 증착, RIE를 이용한 CaAs via-hole건식식각, 그리고 airbridge 공정조건을 위한 실험 및 분석 작업을 수행하였다. Si₃N₄의 증착 실험에서는 굴절률이 2인 조건을, GaAs via-hole 식각 실험에서는 최적화된 thru-via의 모양과 식각률을 갖는 조건을, airbridge 실험에서는 polyimide coating 및 건식 식각 조건과 금 도금 및 습식 식각의 최적 조건들을 찾아내었다.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.7 s.337
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• pp.41-48
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• 2005

We design and fabricate 3-dB tandem directional coupler using the coplanar waveguide structure which is applicable to balanced amplifiers and mixers for 60 GHz wireless local area network system. The coupler comprises the multiple-sectional parallel-coupled lines to facilitate the fabrication process, and enable smaller device size and higher directivity than those of the conventional 3-dB coupler employing the edge-coupled line. In this study, we adopt the structure of two-sectional parallel-coupled lines of which each single-coupled line has a coupling coefficient of -8.34 dB and airbridge structure to monolithically materialize the uniplanar coupler structure instead of using the conventional multilayer or bonded structure. The airbridge structure also supports to minimize the parasitic components and maintain desirable device performance in V-band (50$\~$75 GHz). The measured results from the fabricated couplers show couplings of 3.S$\~$4 dB and phase differences of 87.5$^{\circ}{\pm}1^{\circ}$ in V-band range and show directivities higher than 30 dB at a frequency of 60 GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.8
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• pp.37-44
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• 2004

This paper describes a new GaAs-based surface-micromachined microstrip line supported by dielectric post and air-gapped signal line with ground metal. This new type of dielectric-supported air-gapped microstripline(DAML) structure is developed using surface micromachining techniques to provide easy means of airbridge connection between the signal lines and to archive low losses at millimeter-wave frequency band with wide impedance range. Each DAMLs with the length of 5 mm are fabricated and the measured characteristics are compared with those of the conventional microstrip transmission line. These transmission lines are composed of 10 ${\mu}{\textrm}{m}$ height of signal line, post size of 10 ${\mu}{\textrm}{m}$ ${\times}$ 10 ${\mu}{\textrm}{m}$ and post height of 9 ${\mu}{\textrm}{m}$. By elevating the signal lines from the substrate using the micromachining technology, the substrate dielectric loss can be reduced Compared with of the conventional microstrip transmission line showing 7.5 dB/cm loss at 50 GHz, the loss can be reduced to 1.1 dB/cm loss at 50 GHz.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.129-137
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• 1995

AlGaAs/GaAs HBTs have been fabricated using SABM (Self-Aligned Base Metal) process technique. The mesa type HBTs were fabricated through following steps: isolation implant, wet etching, metal lift-off, and airbridge interconnection process. The fabricated HBTs with 2umx10um size emitter showed a common emitter current gain of 10 at a collector current density of Jk=100kA/cm$^{2}$, a breakdown volgate BVCEO of 8V, and the ideality factors of base and collector junctions of 1.6 and 1.1, respectively. On-wafer S-Parameter measurement at 0.5~18GHz has been made for the characterization of the common emitter HBTx with a 2umx10um size emitter. The extrapolated current gain cut-off frequency of ft=30GHz and maximum oscillation frequency of fmax=23 GHz were obtained at a collector current density of Jc=70kA/cm$^{2}$. Small signal HBT equivalent circuit was extracted from the S-Parameter data.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.3 s.333
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• pp.33-38
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• 2005

In this paper, we have designed and fabricated a hybrid ring coupler to prove the fabrication possibility of various passive components, applying millimeter wave using newly proposed transmission lines, i.e. BAMLs. The characteristics of the fabricated hybrid ing coupler were a the S31(coupling) of 3.58 dB, the S21(thru) of 3.31 dB at the 60 GHz center frequency, the S11(return loss) over 16.17 dB, S41(isolation) over 55 dB at 61 GHz, and the phase difference between port 2 and port 3 of $180{\pm}loat$ 60GHz. In order to reduce the size of hybrid ring coupler, we designed the hybrid ring coupler which inserts a slow wave structure. With this structure, we were able to reduce the hybrid ring coupler by $33\%$ area.