• Journal of the Microelectronics and Packaging Society
• /
• v.30 no.1
• /
• pp.42-48
• /
• 2023

Recently, there has been an increasing demand for performance improvement and miniaturization in response to the growing variety of signals and power demands in many industries such as mobile, IoT, and automotive. As a result, there is a high demand for high-performance chips and advanced packaging technologies that can package such chips. In this context, the FOWLP process technology is a suitable technology, and this paper discusses the plasma application technologies that are being used and studied to improve the shortcomings of this process. The paper is divided into four parts, with an introduction and case studies for each of the plasma application technologies used in each part.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2006.10a
• /
• pp.93-108
• /
• 2006

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2005.09a
• /
• pp.51-65
• /
• 2005

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2003.04a
• /
• pp.115-134
• /
• 2003

• The monthly packaging world
• /
• s.165
• /
• pp.107-115
• /
• 2007

• The monthly packaging world
• /
• s.317
• /
• pp.65-73
• /
• 2019

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2003.11a
• /
• pp.39-47
• /
• 2003

• The monthly packaging world
• /
• s.325
• /
• pp.74-76
• /
• 2020

• Journal of the Microelectronics and Packaging Society
• /
• v.12 no.3 s.36
• /
• pp.197-205
• /
• 2005

Development of the packaging is one of the critical issues for commercialization of the RF-MEMS devices. RF MEMS package should be designed to have small size, hermetic protection, good RF performance and high reliability. In addition, packaging should be conducted at sufficiently low temperature. In this paper, a low temperature hermetic wafer level packaging scheme for the RF-MEMS devices is presented. For hermetic sealing, Au-Sn eutectic bonding technology at the temperature below $300{\times}C$ is used. Au-Sn multilayer metallization with a square loop of $70{\mu}m$ in width is performed. The electrical feed-through is achieved by the vertical through-hole via filled with electroplated Cu. The size of the MEMS Package is $1mm\times1mm\times700{\mu}m$. By applying $O_2$ plasma ashing and fabrication process optimization, we can achieve the void-free structure within the bonding interface as well as via hole. The shear strength and hermeticity of the package satisfy the requirements of MIL-STD-883F. Any organic gases or contamination are not observed inside the package. The total insertion loss for the packaging is 0.075 dB at 2 GHz. Furthermore, the robustness of the package is demonstrated by observing no performance degradation and physical damage of the package after several reliability tests.

• Korean Journal of Construction Engineering and Management
• /
• v.21 no.3
• /
• pp.20-27
• /
• 2020

EPC contractors have made continuous efforts to develop integrated project execution methods to improve the performance of industrial plant project. In particular, the concept of Advanced Work Packaging (AWP) has been recently presented by readjusting the existing "Work Packaging" concept as part of the integrated project execution method from the project life-cycle perspective. However, Korean EPC contractors are still unfamiliar with the AWP implementation. Thus, this study aims to identify the organizational competency factor for effective implementation of AWP. For this purpose, first, this study identified the expected risks in AWP project and the 29 organizational competency factors to manage risks. Second, five experts verified the suitability of factors and supplemented the factors. Finally, 37 factors were identified as organizational competency factors for implementing AWP.