• Journal of the Korean Vacuum Society
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• v.4 no.2
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• pp.177-182
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• 1995

저잡음 HEMT소자 제작을 위한 에피택셜 기판을 MBE방법을 이용하여 $In_{0.53}Ga_{0.47}As/In_{0.52}AI_{0.48}$As/InP 물질계로 성장하였다. 기판온도의 변화, 채널층과 격리층 사이의 성장 일시 멈춤 등의 성장 조건 변화에 따른 Hall 이동도의 변화를 연구하였다. 전자 공급층을 Si으로 델타도핑한 결과 같은 조건에서 성장기판의 온도를 $520^{\circ}C$에서$ 540^{\circ}C$로 증가시키면 실온의 전자이동도는 7,850$\textrm{cm}^2$/Vsec으로 증가하였으며, 격리층과 채널층 사이에서 약 50초간 성장중 채널층의 표면 adatom의 surface migration 시간을 충분히 제공하여 결정결함의 감소로 계면의 급격성이 향상된 결과로 사료된다. 본 실험을 통하여 얻은 최고 이동도 값은 격리층의 두께가 $100\AA$인 경유에 상온 측정결과 $11,400\textrm{cm}^2$/vsec 및 77K 측정결과 $50,300\textrm{cm}^2$/Vsec이었다.

• Bulletin of the Korean Chemical Society
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• v.28 no.4
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• pp.635-646
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• 2007

The reaction of gas-phase hydrogen atoms H with H atoms chemisorbed on a graphite surface has been studied by the classical dynamics. The graphite surface is composed of the surface and 10 inner layers at various gas and surface temperatures (Tg, Ts). Three chains in the surface layer and 13 chains through the inner layers are considered to surround the adatom site. Four reaction pathways are found: H2 formation, H-H exchange, H desorption, and H adsorption. At (1500 K, 300 K), the probabilities of H2 formation and H desorption are 0.28 and 0.24, respectively, whereas those of the other two pathways are in the order of 10-2. Half the reaction energy deposits in the vibrational motion of H2, thus leading to a highly excited state. The majority of the H2 formation results from the chemisorption-type H(g)-surface interaction. Vibrational excitation is found to be strong for H2 formed on a cold surface (~10 K), exhibiting a pronounced vibrational population inversion. Over the temperature range (10-100 K, 10 K), the probabilities of H2 formation and H-H exchange vary from 0 to ~0.1, but the other two probabilities are in the order of 10-3.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.144-144
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• 2000

이전에 수행된 연구에서 표면에 수직하게 dangling bond를 가지는 adatom으로 장식된 6H-SiC(0001) {{{{ SQRT { 3} }}}}$\times${{{{ SQRT { 3} }}}} 표면은 단일 전자 모형으로는 설명되어지지 않는 반도체적 성질을 가지는 것으로 보고되어졌다. 최근의 많은 이론적, 실험적 결과는 이 표면이 Mott-Hubbard 모형으로 설명되어질 수 있음이 보고되어졌다. 이 표면에서 Si이 좀 더 풍부한 3$\times$3 표면의 여러 모형들에 대해 이론적, 실험적 연구는 Energy적으로 E-J 모형이 가장 안정하다고 보고하였다. E-J모형은 표면에 수직인 dagling bond를 가지며 6H-SiC(0001) {{{{ SQRT { 3} }}}}$\times${{{{ SQRT { 3} }}}} 표면에 비해 1/3배의 밀도를 지닌다. 또한 최근의 연구에서 3$\times$3 표면 또한 단일 전자모형은 이 표면의 반도체적 성질에 위배되며 Mott-Hubbard 모형으로 설명되어질수 있음이 보고되어졌다. 이러한 표면 위에 알칼리금속인 Na을 흡착시키면서 일함수의 변화와 Valence Band의 변화를 측정하였다. XPS를 이용하여 Na이 흡착되면서 발생되는 Si과 C의 내각준위의 변화를 측정하였다. 6-SiC(0001) {{{{ SQRT { 3} }}}}$\times${{{{ SQRT { 3} }}}} 과 3$\times$3 표면 구조 모델을 Na을 흡착한 6H-SiC(0001) {{{{ SQRT { 3} }}}}$\times${{{{ SQRT { 3} }}}} 과 3$\times$3 표면으로부터 측정한 UPS, XPS data들로부터 지금까지 제기되어 있는 각 재배열 구조 모형들을 비교 검토하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.150-150
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• 2000

The adsorption geometry and the electronic property of Mg grown at room temperature on the Si(111)-7$\times$7 surface with various coverages have been studied by scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). At low Mg coverage, the Mg atoms preferentially adsorb at the center adatom sites of the faulted half of the Si(111)-7$\times$7 surface. The adsorbed Mg atom acts as nucleophile with respect to Si atoms thus forms a stable ionic bond with the substrate Si atoms. Above 1 Ml, the 7$\times$7 surface starts to be disrupted and an amorphous Mg overlayer is formed. The LEED shows either $\delta$7$\times$7 or 1$\times$1 pattern at this coverage. When more Mg atoms were exposed, a flat and broad {{{{ { 2} over {3 } }}}}{{{{ SQRT { 3} }}}}$\times${{{{ { 2} over {3 } }}}}{{{{ SQRT { 3} }}}}R30$^{\circ}$region evolves. A flat silicide is formed at first and multi-level Mg islands having hexagonal step edges develop with increasing coverage. The scanning tunneling spectroscopy (STS) confirms the electronic properties of these Mg films on the si(111) 7$\times$7 surface at various coverages.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.364-364
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• 2010

Defects existing on the clean Si(5 5 12)-$2{\times}1$, composed of one-dimensional(1-D) structures such as honeycomb (H) chain, $\pi$-bonded ($\pi$) chains, dimer-adatom (D-A) row, and tetramer (T) row, have been investigated by scanning tunneling microscopy (STM). It is found that the defects can be classified to two categories: One is originated from phase boundaries in D-A and T rows having $2{\times}$ periodicities, by which buckling directions are reversed, and the other is caused by missing atoms on $\pi$ chains, D-A rows, and T rows. All these defects are symmetric with respect to the [6 6 $\bar{5}$] direction, which is due to one-dimensional symmetry along the [1 $\bar{1}$ 0] direction. Especially it is worth noticing that on H chains none of such defects exist, which implies that the H chain is energetically the most stable among 1-D structures existing on Si(5 5 12)-$2{\times}1$.

• Journal of the Korean Society for Heat Treatment
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• v.31 no.5
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• pp.237-243
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• 2018

In-rich InGaN epilayers were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). InGaN epilayers grown at various growth condition were observed by SEM, XRD, and RHEED. When plasma power of nitrogen increased from 290 to 350 W, surface morphology and crystal quality became worse according to more active nitrogen on the surface of InGaN at N-rich growth condition. As In composition was reduced from 89 to 71% by changing the incoming flux of In and Ga, surface morphology and crystal quality became worse. In addition, weak peaks of cubic InGaN phase was observed from InGaN layer with 71% In composition by XRD ${\Phi}$ scan measurement. When growth temperature decreased from 500 to $400^{\circ}C$, RHEED diffraction pattern was changed to be from streaky to spotty which means atomically rough surface, and spotty pattern showed cubic symmetry of InGaN clearly. XRD ${\Phi}$ scan measurement gave clear evidence that more cubic InGaN phase was formed at low growth temperature. All these results indicates that extremely low surface mobility of Ga adatom caused inferior crystal quality and cubic InGaN phase.

• Bulletin of the Korean Chemical Society
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• v.20 no.10
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• pp.1136-1144
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• 1999

The collision-induced reaction of gas-phase atomic hydrogen with hydrogen atoms chemisorbed on a silicon (001)-(2×1) surface is studied by use of the classical trajectory approach. The model is based on reaction zone atoms interacting with a finite number of primary system silicon atoms, which then are coupled to the heat bath, i.e., the bulk solid phase. The potential energy of the Hads‥Hgas interaction is the primary driver of the reaction, and in all reactive collisions, there is an efficient flow of energy from this interaction to the Hads-Si bond. All reactive events occur on a subpicosecond scale, following the Eley-Rideal mechanism. These events occur in a localized region around the adatom site on the surface. The reaction probability shows the maximum near 700K as the gas temperature increases, but it is nearly independent of the surface temperature up to 700 K. Over the surface temperature range of 0-700 K and gas temperature range of 300 to 2500 K, the reaction probability lies at about 0.1. The reaction energy available for the product states is small, and most of this energy is carried away by the desorbing H2 in its translational and vibrational motions. The Langevin equation is used to consider energy exchange between the reaction zone and the bulk solid phase.

• Journal of the Korean Physical Society
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• v.73 no.9
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• pp.1324-1328
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• 2018

By employing ab-initio total-energy and electronic-structure calculations based on the density-functional theory, we studied the effects of surface strain ${\varepsilon}_s$ on the adsorption properties of a Au adatom on defective MgO(001) surfaces with surface oxygen vacancies ($F_s$ centers). The formation energy of the $F_s$ center on MgO(001) varied very slightly in the region of ${\varepsilon}_s$ from -6% to -4% and monotonically decreased with the increase in ${\varepsilon}_s$, from -4% to +6%. As ${\varepsilon}_s$ increased, the adsorption energy ($E^{Fs}_{ads}$) of Au on the $F_s$ center of strained MgO(001) monotonically decreased and, in particular, showed a much larger decrease in $E^{Fs}_{ads}$ for a tensile surface strain of ${\varepsilon}_s$ > +4%. The surface strain dependence on the physical properties, such as the charge states, the spatial charge rearrangement, for Au on the $F_s$ center of strained MgO(001) surfaces was also analyzed. These results provide important physical information on the effects of surface strain on the adsorption of Au on MgO(001) surfaces with $F_s$ centers.

• Korean Chemical Engineering Research
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• v.45 no.2
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• pp.124-132
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• 2007

This work investigated a fabrication way of stable platinized Ti electrode and evaluated the electrochemical characteristics of the Sn-modified platinized Ti electrode in nitrate solution. A Pt electro-plating way to form some open special clearances within the Pt coating layer on etched Ti substrate was very important to remove effectively the residual contaminate due to plating solution out of the fabricated electrode surface and to maximize the actual electrode surface area contacting solution. Both boiling and electro-cleaning processes of the fabricated electrode was essential to obtain a stable platinized-Pt electrode with reproducible and stable surface property which was necessary for the correct evaluation of Sn coverage on the electrode. The electro-cleaning caused a morphology change of the platinized Ti electrode surface with some downy hair-like polyps formed during the deposition disappearing, which made the electrode stable. The Sn-modified platinized Ti electrode in this work showed the best electro-activity for nitrate reduction, when it was fabricated through the Pt electro-plating of about 30 minutes.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.4
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• pp.153-157
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• 2011

We have investigated the effect of inductively coupled plasma (ICP) treatment on the early growth stage of heteroepitaxial Ge layers grown on Si(100) substrates using low pressure chemical vapor deposition (LPCVD), The Si(100) substrates were treated by ICP process with various source and bias powers, followed by the Ge deposition, The ICP treatment led to the enhancement in the coalescence of Ge islands, The growth rate of Ge on Si(100) with ICP surface treatment is about 5 times higher than that without ICP surface treatment. A missing dimer caused by the ICP surface treatment can act as a nucleation site for Ge adatoms, which could be responsible for the improvement in growth behavior of Ge on Si(100) substrates.