• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.55 no.8
• /
• pp.392-398
• /
• 2006

The properties of tunable dielectric materials on RF frequency band are important high tunability and low loss for RF variable devices, variable capacitor, phased array antenna and other components application. Various composite of BST(barium strontium titanate) ratio combined with other non-electrical active oxide ceramics have been formulated for such uses. We present the tunable properties and Curie temperature on BST thick films. The grain growth of the weight ratio of $BaTiO_3$ increased. This can be explained by the substitute $Sr^{2+}$ ion for $Ba^{2+}$ ion in the $BaTiO_3$ system. The Curie temperature was shifted to lower temperature with increasing $SrTiO_3$in the $BaTiO_3-SrTiO_3$ system, because of decreasing the lattice constant. Also, the dielectric constant, tunability and K-factor of $(Ba_xSr_{1-x})TiO_3$ at over the Curie temperature decreased, at over the $60^{\circ}C$ fixation, maximum dielectric constant at Curie temperature and hence sharper phase transformation occurred at Curie temperature. The result were interpreted as a process of internal stress relaxation resulting form the increase of $90^{\circ}$ domains induced the BST. As a result, It is concluded that over the Curie temperature, frequency response and DC field effect for the tunable properties of BST thick film are suppressed by the transition broadening. For the application of tunable devices, that the curie temperature was investigated to be increased.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.13 no.9
• /
• pp.907-915
• /
• 2002

In this paper, a compact digital phase shifter to be used an active phased array antenna system for satellite communications was proposed. The even and odd mode analysis for a given reflection-type phase shifter, which uses a folded hybrid coupler as a base element, was performed and the design parameters were derived. Also, to verify experimentally the electrical performances of the proposed structure, X-band 4-bit digital phase shifter was designed and fabricated using Teflon soft substrate $({\varepsilon}_r; =\;2.17)$. Its circuit size was less than 3.5 cm $\times$ 3.0 cm, and it exhibited at least 50 % size reduction as compared with the conventional unfolded configuration. The experimental results of the fabricated phase shifter showed that the average insertion loss and insertion loss variation were less than 3.5 dB, $\pm$ 0.6 dB within the operating band, 7.9 ~ 8.4 GHz, respectively. And, input and output return loss were more than 10 dB, respectively. Also, the phase response of the phase shifter showed 4-bit operation with $\pm$3$^{\circ}$ rms phase error.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.22 no.2
• /
• pp.199-207
• /
• 2011

A Ku-band low noise amplifier has been designed and fabricated by using 0.25 um SiGe BiCMOS process. The developed Ku-band LNA RFIC which has been designed with hetero-junction bipolar transistor(HBT) in the BiCMOS process have noise figure about 2.0 dB and linear gain over 19 dB in the frequency range from 9 GHz to 14 GHz. Optimization technique for p-tap value and electro-magnetic(EM) simulation technique had been used to overcome the inaccuracy in the PDK provided from the foundry service company and to supply the insufficient inductor library. The finally fabricated low noise amplifier of two fabrication runs has been implemented with the size of $0.65\;mm{\times}0.55\;mm$. The pure amplifier circuit layout with the reduced size of $0.4\;mm{\times}0.4\;mm$ without the input and output RF pads and DC bais pads has been incorporated as low noise amplication stages in the multi-function RFIC for the active phased array antenna of Ku-band satellite VSAT.