• The Journal of the Acoustical Society of Korea
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• v.20 no.1
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• pp.13-20
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• 2001

Adaptive digital filters with long impulse response such as acoustic echo canceller and active noise controller suffer from slow convergence and computational burden. Subband techniques and multirate signal processing have been recently developed to improve the problem of computational complexity and slow convergence in conventional adaptive filter. Any FIR transfer function can be realized as a serial connection of interpolators followed by subfilters with a sparse impulse response. In this case, each interpolator which is related to the column vector of Hadamard matrix has band-pass magnitude response characteristics shifted uniformly. Subband technique using Hadamard transform and decimation of subband signal to reduce sampling rate are adapted to system modeling and acoustic noise cancellation In this paper, delayless subband structure with nonuniform bandwidth has been proposed to improve the performance of the convergence speed without aliasing due to decimation, where input signal is split into subband one using tree-structured filter bank, and the subband signal is decimated by a decimator to reduce the sampling rate in each channel, then subfilter with sparse impulse response is transformed to full band adaptive filter coefficient using Hadamard transform. It is shown by computer simulations that the proposed method can be adapted to general adaptive filtering.

• Clinical and Experimental Reproductive Medicine
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• v.47 no.2
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• pp.108-113
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• 2020

Objective: Endometrial fibrosis, the primary pathological feature of intrauterine adhesion, may lead to disruption of endometrial tissue structure, menstrual abnormalities, infertility, and recurrent pregnancy loss. At present, no ideal therapeutic strategy exists for this fibrotic disease. Eupatilin, a major pharmacologically active flavone from Artemisia, has been previously reported to act as a potent inducer of dedifferentiation of fibrotic tissue in the liver and lung. However, the effects of eupatilin on endometrial fibrosis have not yet been investigated. In this study, we present the first report on the impact of eupatilin treatment on transforming growth factor beta (TGF-β)-induced endometrial fibrosis. Methods: The efficacy of eupatilin on TGF-β-induced endometrial fibrosis was assessed by examining changes in morphology and the expression levels of fibrosis markers using immunofluorescence staining and quantitative real-time reverse-transcription polymerase chain reaction. Results: Eupatilin treatment significantly reduced the fibrotic activity of TGF-β-induced endometrial fibrosis in Ishikawa cells, which displayed more circular shapes and formed more colonies. Additionally, the effects of eupatilin on fibrotic markers including alpha-smooth muscle actin, hypoxia-inducible factor 1 alpha, collagen type I alpha 1 chain, and matrix metalloproteinase-2, were evaluated in TGF-β-induced endometrial fibrosis. The expression of these markers was highly upregulated by TGF-β pretreatment and recovered to the levels of control cells in response to eupatilin treatment. Conclusion: Our findings suggest that suppression of TGF-β-induced signaling by eupatilin might be an effective therapeutic strategy for the treatment of endometrial fibrosis.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.13.1-13.1
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• 2009

Transparent electronics has attracted many interests, for it can open new applications for consumer electronics, transportation, business, and military. Among them, display backplane, thin film transistor (TFT) array would be the most attractive application. Many researchers have been investigating oxide semiconductors for transparent channel material of TFT since the report for transparent amorphous oxide semiconductor (TAOS) TFT by Hosono group and ZnO TFT by Wager group. Especially, oxide TFTs have been intensively investigated during a couple of years since the first demonstration of ZnO-TFT driving AM-OLED. Many papers regarding the fabrication and performance of oxide TFTs, and active matrix display driven by oxide TFTs have been reported. Now lots of people have confidence in the competitiveness of oxide TFTs for the backplane of AM-Display. Especially, high mobility, uniformity, fairly good stability, and low cost process make oxide TFTs applied even to a large size AM-OLED. Last year, Samsung mobile display, former SID, reported 12" AM-OLED driven by IZGO-TFT and it seems that the remained issue for the mass production is the bias temperature stability. Here, we will introduce the application of oxide TFT and important issue for oxide TFT to be used for the direct printing.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.6
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• pp.229-235
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• 2002

This paper presents the fabrication of polycrystalline thin film transistor(TFT) using sequential lateral solidification(SLS) of amorphous silicon. The fabricated SLS TFT showed high Performance suitable for active matrix liquid crystal display(AMLCD). The SLS process involves (1) a complete melting of selected area via irradiation through a patterned mask, and (2) a precisely controlled pulse translation of the sample with respect to the mask over a distance shorter than the super lateral growth(SLG) distance so that lateral growth extended over a number of iterative steps. The SLS experiment was performed with 550$\AA$ a-Si using 308nm XeCl laser having $2\mu\textrm{m}$ width. Irradiated laser energy density is 310mJ/$\textrm{cm}^2$ and pulse duration time was 25ns. The translation distance was 0.6$\mu$m/pulse, 0.8$\mu$m/pulse respectively. As a result, a directly solidified grain was obtained. Thin film transistors (TFTs) were fabricated on the poly-Si film made by SLS process. The characteristics of fabricated SLS p -type poly-Si TFT device with 2$\mu\textrm{m}$ channel width and 2$\mu\textrm{m}$ channel length showed the mobility of 115.5$\textrm{cm}^2$/V.s, the threshold voltage of -1.78V, subthreshold slope of 0.29V/dec, $I_{off}$ current of 7$\times$10$^{-l4}$A at $V_{DS}$ =-0.1V and $I_{on}$ / $I_{off}$ ratio of 2.4$\times$10$^{7}$ at $V_{DS}$ =-0.1V. As a result, SLS TFT showed superior characteristics to conventional poly-Si TFTs with identical geometry.y.y.y.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.4
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• pp.817-824
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• 2000

This paper presents circuit DQ modeling and analysis of operating characteristics of hybrid cascade multilevel PWM rectifier, especially five-level, without isolation transformers. The circuit DQ transformation changes the original three-phase time varying circuit to stationary equivalent one by employing the synchronously rotating transformation matrix. As a result of circuit DQ modeling, the operating characteristics and some useful design relationships for the system are obtained with ease. That is, the analytic equations for DC voltages and active/reactive power supplied by source with respect to control variables are Presented. Moreover, the DC voltages for the multilevel output generation may be directly built up from AC utility source and the important control equation ensuring 5-level output voltage is obtained. Finally, to confirm the validity of the analysis, MATLAB simulations are carried out and the simulation results show good agreements between analytic predictions and the simulated waveforms.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.180-180
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• 2010

Thin film transistors (TFTs) based on oxide semiconductors have emerged as a promising technology, particularly for active-matrix TFT-based backplanes. Currently, an amorphous oxide semiconductor, such as InGaZnO, has been adopted as the channel layer due to its higher electron mobility. However, accurate and repeatable control of this complex material in mass production is not easy. Therefore, simpler polycrystalline materials, such as ZnO and $SnO_2$, remain possible candidates as the channel layer. Inparticular, ZnO-based TFTs have attracted considerable attention, because of their superior properties that include wide bandgap (3.37eV), transparency, and high field effect mobility when compared with conventional amorphous silicon and polycrystalline silicon TFTs. There are some technical challenges to overcome to achieve manufacturability of ZnO-based TFTs. One of the problems, the stability of ZnO-based TFTs, is as yet unsolved since ZnO-based TFTs usually contain defects in the ZnO channel layer and deep level defects in the channel/dielectric interface that cause problems in device operation. The quality of the interface between the channel and dielectric plays a crucial role in transistor performance, and several insulators have been reported that reduce the number of defects in the channel and the interfacial charge trap defects. Additionally, ZnO TFTs using a high quality interface fabricated by a two step atomic layer deposition (ALD) process showed improvement in device performance In this study, we report the fabrication of high performance ZnO TFTs with a $Si_3N_4$ gate insulator treated using plasma. The interface treatment using electron cyclotron resonance (ECR) $O_2$ plasma improves the interface quality by lowering the interface trap density. This process can be easily adapted for industrial applications because the device structure and fabrication process in this paper are compatible with those of a-Si TFTs.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.380-380
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• 2010

Currently, organic light-emitting diodes (OLEDs) have been proven of their readiness for commercialization in terms of lifetime and efficiency. In accordance with emerging new technologies, enhancement of light efficiency and extension of application fields are required. Particularly inverted structures, in which electron injection occurs at bottom and hole injection on top, show crucial advantages due to their easy integration with Si-based driving circuits for active matrix OLED as well as large open area for brighter illumination. In order to get better performance and process reliability, usually a proper buffer layer for carrier injection is needed. In inverted top emission OLED, the buffer layer should protect underlying organic materials against destructive particles during the electrode deposition, in addition to increasing their efficiency by reducing carrier injection barrier. For hole injection layers, there are several requirements for the buffer layer, such as high transparency, high work function, and reasonable electrical conductivity. As a buffer material, a few kinds of transition metal oxides for inverted OLED applications have been successfully utilized aiming at efficient hole injection properties. Among them, we chose 2 nm of $WO_3$ between NPB [N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] and Au (or Al) films. The interfacial energy-level alignment and chemical reaction as a function of film coverage have been measured by using in-situ ultraviolet and X-ray photoelectron spectroscopy. It turned out that the $WO_3$ interlayer substantially reduces the hole injection barrier irrespective of the kind of electrode metals. It also avoids direct chemical interaction between NPB and metal atoms. This observation clearly validates the use of $WO_3$ interlayer as hole injection for inverted OLED applications.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.37 no.12
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• pp.1465-1471
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• 2013

The electrical and mechanical properties of room temperature vulcanized (RTV) silicone rubber composites are investigated as functions of multi-walled carbon nanotube (CNT), carbon black (CB), and thinner content. The thinner is used to improve the CNT and CB dispersion in the matrix. The electrical and mechanical properties of the composite with CNT are improved when compared to the composite with CB at the same content. As the thinner content is 80 phr, the electric resistance of the composite decreases significantly with the CNT content and shows contact point saturation of CNT at 2.5 phr. As the thinner content increases, the dispersion of conductive particles improves; however, the critical CB content increases because of the reduction in the CB weight ratio. It is believed that an electrode that needs good flexibility and excellent electrical properties can be manufactured when the amount of CNT and CB are increased with the thinner content.

• Mass Spectrometry Letters
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• v.8 no.2
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• pp.23-28
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• 2017

Arctigenin is the main active ingredient of Fructus Arctii, which has been reported with a variety of therapeutic activities including anti-cancer, anti-inflammation, anti-virus, and anti-obesity effects. In this study, a simple and sensitive liquid chromatography-tandem mass spectrometry (LC-MS/MS) method was developed and validated for the determination of arctigenin in rat plasma. The assay utilized a simple protein precipitation with methanol and the mobile phase consisted of 100% methanol and water containing 0.1% formic acid (65:35 v/v). Arctigenin and the internal standard (psoralen) were monitored using a positive electrospray turbo ionspray mode with multiple reaction monitoring transitions of m/z $373.2{\rightarrow}136.9$ and m/z $187.2{\rightarrow}130.9$, respectively, and total chromatographic run time was within 5 min. The lower limit of quantification (LLOQ) of arctigenin was 5 ng/mL in the rat plasma. The intra- and inter-day accuracy of arctigenin at LLOQ and matrix-matched quality control samples ranged 97.4 - 104.8% and 97.2 - 102.0%, respectively. The intra-day precision was within 4.80% and the inter-day precision was within 5.92%. Application of the present method was demonstrated through a pharmacokinetic study after intravenous and oral administration of arctigenin in male Sprague Dawley rats.

• Food Science and Biotechnology
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• v.15 no.3
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• pp.447-452
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• 2006

To determine the functions of specific cell wall polysaccharides, polysaccharides of three mutants, mur3-1, mur3-2, and mur3-3, obtained from Arabidopsis wild type, underwent structural characterization. Upon sequential separation of pectins (RG-I and RG-II) and cross-linking glycans (xyloglucan, XG), only XG was affected by the mud mutation. Wild-type XG contained a considerable amount of fucose, whereas the fucose level in mur3 XGs was less than 20% that of wild type. Further analysis of XGs by matrix-assisted laser-induced/ionization time-of-flight (MALDI-TOF) mass spectrometry indicated that mud lines considerably or completely lost the fucosylated XG oligosaccharides such as XXFG and XLFG and the double-galactosylated oligosaccharide XLLG $^1H$-NMR spectroscopic analyses of the XG oligosaccharides from mur3-3 plant revealed the absence of fucose and a galactose level in the galactosylated side chain that was reduced by 40% compared to that of Arabidopsis wild-type plant. In contrast, 85% less fucose and a slight loss of galactose were observed in the mur3-1 and mur3-2 lines which show normal growth habit. Of the three Arabidopsis mur3 lines studied here, mur3-3 is disrupted by a T-DNA insertion in the exon of MUR3 which encodes XG-specific galactosyltransferase, and exhibits slight dwarfism. These results indicated that the T-DNA insertion at the MUR3 locus did not induce the complete loss of galactose in XG, and that galactose, rather than fucose, in the XG side chains made a major contribution to overall wall strength.