• 대한지하수환경학회지
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• 제4권4호
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• pp.169-174
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• 1997

경상북도 문경 부근에 위치하는 폐광산인 단붕탄광의 폐석장에서 유출되는 산성광산수의 조성변화를 보기 위하여 1995년 장마 전, 후 및 1997년 장마 전에 하천수와 퇴적물을 채취하여 금속원소의 함량을 분석하였다. 건기 동안에 폐석장 내에서 누적된 황철석의 산화산물이 강우량의 증가에 의해 유출됨으로써 장마 전보다 장마후에 하천수의 pH가 낮아지고 금속농도가 증가하였다. 2년의 시간이 경과한 후는 pH가 1이상 낮아졌으며 금속농도는 2배 이상 증가하여 산성광산수에 의한 오염의 진행이 심화되고 있음을 나타냈다. 적색과 백색으로 나타나는 Fe와 Al수산화물 및 황산염 등의 침전물의 공간적인 분포도 산성광산수의 조성변화를 반영하여 변화하였다. 1995년에 비해 1997년에는 적색침전물이 더 멀리까지 분포하고 백색침전물은 1995년도에는 발견되지 않던 하류까지 확장 분포하였으며 이들 침전물에 결합된 금속이온들의 함량도 수배 내지 수십 배 증가하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권1호
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• pp.141-146
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• 2017

In this letter, we propose the use of tunneling field effect transistors (TFET) as a biosensor that detects bio-molecules on the gate oxide. In TFET sensors, the charges of target molecules accumulated at the surface of the gate oxide bend the energy band of p-i-n structure and thus tunneling current varies with the band bending. Sensing parameters of TFET sensors such as threshold voltage ($V_t$) shift and on-current ($I_D$) change are extracted as a function of the charge variation. As a result, it is found that the performances of TFET sensors can surpass those of conventional FET (cFET) based sensors in terms of sensitivity. Furthermore, it is verified that the simultaneous sensing of two different target molecules in a TFET sensor can be performed by using the ambipolar behavior of TFET sensors. Consequently, it is revealed that two different molecules can be sensed simultaneously in a read-out circuit since the multi-sensing is carried out at equivalent current level by the ambipolar behavior.

• Asian Pacific Journal of Cancer Prevention
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• 제17권7호
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• pp.3173-3177
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• 2016

Background: The Ministry of Public Health (MOPH) in Lebanon provides cancer drugs free of charge for uninsured patients who account for more than half the total case-load. Other categories of cancer care are subsidized under more stringent eligibility criteria. MOPH's large database offers an excellent opportunity to analyze the cost of cancer treatment in Lebanon. Materials and Methods: Using utilization and spending data accumulated at MOPH during 2008-2013, the cost to the public budget of cancer drugs was assessed per case and per drug type. Results: The average annual cost of cancer drugs was 6,475$ per patient. Total cancer drug costs were highest for breast cancer, followed by chronic myeloid leukemia (CML), colorectal cancer, lung cancer, and Non-Hodgkin's lymphoma (NHL), which together represented 74% of total MOPH cancer drug expenditure. The annual average cancer drug cost per case was highest for CML ($31,037), followed by NHL ($11,566). Trastuzumab represented 26% and Imatinib 15% of total MOPH cancer drug expenditure over six years. Conclusions: Sustained increase in cancer drug cost threatens the sustainability of MOPH coverage, so crucial for socially vulnerable citizens. To enhance the bargaining position with pharmaceutical firms for drug cost containment in a small market like Lebanon, drug price comparisons with neighboring countries which have already obtained lower prices may succeed in lowering drug costs.

• 상하수도학회지
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• 제25권4호
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• pp.479-488
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• 2011

Nanofiltration was performed with polyaluminium chloride solutions at different pH conditions to understand effects of inorganic compounds on aluminum hydrolysis products, i.e., three distinctive groups of aluminum species: polymeric Al at low pH; $Al(OH)_3$ at neutral pH; and ${Al(OH)_4}^-$ at high pH. The PACl solution was prepared to be approximately 4.0mM and adjusted to the designated pH. The influence of inorganic compounds on Al species fouling was investigated with 4.9mM $CaCl_2$ and 3.5mM $MgSO_4$ because $Ca^{2+}$, $Mg^{2+}$, $Cl^-$, ${SO_4}^{2-}$ are the most common inorganics in the drinking water. NF membrane fouling was measured by flux decline rate. The impact of $CaCl_2$ was not significant on the individual Al hydrolysis products fouling. However, the flux decline rate was drastically changed in the presence of $MgSO_4$. The concentration of particulate matters was considerably increased possibly due to interaction between Al species and ${SO_4}^{2-}$ where $MgSO_4$ was introduced. The particulates were accumulated on the membrane and enhanced the hydraulic resistance of the cake layer. In addition, conductivity removal of the membrane was decreased when Al-hydroxide was dominant due to reduction of membrane surface charge. The rejection of $Ca^{2+}$and $Mg^{2+}$ were considerably different, which implys that composition of inorganics paly a role on conductivity removal.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.523-523
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• 2012

As the wafer geometric requirements continuously complicated and minutes in tens of nanometers, the expectation of real-time add-on sensors for in-situ plasma process monitoring is rapidly increasing. Various industry applications, utilizing plasma impedance monitor (PIM) and optical emission spectroscopy (OES), on etch end point detection, etch chemistry investigation, health monitoring, fault detection and classification, and advanced process control are good examples. However, process monitoring in semiconductor manufacturing industry requires non-invasiveness. The hypothesis behind the optical monitoring of plasma induced ion current is for the monitoring of plasma induced charging damage in non-invasive optical way. In plasma dielectric via etching, the bombardment of reactive ions on exposed conductor patterns may induce electrical current. Induced electrical charge can further flow down to device level, and accumulated charges in the consecutive plasma processes during back-end metallization can create plasma induced charging damage to shift the threshold voltage of device. As a preliminary research for the hypothesis, we performed two phases experiment to measure the plasma induced current in etch environmental condition. We fabricated electrical test circuits to convert induced current to flickering frequency of LED output, and the flickering frequency was measured by high speed optical plasma monitoring system (OPMS) in 10 kHz. Current-frequency calibration was done in offline by applying stepwise current increase while LED flickering was measured. Once the performance of the test circuits was evaluated, a metal pad for collecting ion bombardment during plasma etch condition was placed inside etch chamber, and the LED output frequency was measured in real-time. It was successful to acquire high speed optical emission data acquisition in 10 kHz. Offline measurement with the test circuitry was satisfactory, and we are continuously investigating the potential of real-time in-situ plasma induce current measurement via OPMS.

• 조명전기설비학회논문지
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• 제19권2호
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• pp.69-76
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• 2005

본 논문에서는 모의 GIS 내부에 유전체 파티클 들을 놓아둠으로서 전하의 축적과 전계의 집중이 용이하도록 하여 부분방전을 모의하였다. 이때 부분방전 발생과 진전에 따른 방사전자파를 스펙트럼 분석기와 $EMI{\cdot}EMC$ 측정용 안테나$(30\~2000(MHz))$를 사용하여 측정$\cdot$분석하였다. 모의 GIS내부에 유전체 파티클 존재에 따른 부력방전의 검출과 방진전전 과정의 판단을 위한 절연진단의 방법으로서 본 논문에서 제안한 측정 주파수의 대역의 분리와 데이터 측정과 분석법을 이용하면 부분방전의 검출과 방전과정의 판단이 가능함을 확인하였다.

• 한국재료학회지
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• 제20권8호
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• pp.423-428
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• 2010

This study shows the effects of deionized (DI) rinse and oxide HF wet etch processes on silicon substrate during a photolithography process. We found a fail at the wafer center after DI rinse step, called Si pits, during the fabrication of a complementary metal-oxide-semiconductor (CMOS) device. We tried to find out the mechanism of the Si pits by using the silicon wafer on CMOS fabrication and analyzing the effects of the friction charge induced by the DI rinsing. The key parameters of this experiment were revolution per minute (rpm) and time. An incubation time of above 10 sec was observed for the formation of Si pits and the rinsing time was more effective than rpm on the formation of the Si pits. The formation mechanism of the Si pits and optimized rinsing process parameters were investigated by measuring the charging level using a plasma density monitor. The DI rinse could affect the oxide substrate by a friction charging phenomenon on the photolithography process. Si pits were found to be formed on the micro structural defective site on the Si substrate under acceleration by developed and accumulated charges during DI rinsing. The optimum process conditions of DI rinse time and rpm could be established through a systematic study of various rinsing conditions.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2001년도 추계종합학술대회
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• pp.724-728
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• 2001

본 연구에서는 에폭시 수지를 시료로 선정, 5 종의 배합비로 제작한 시편에 대해 절연 파괴 실험을 하여 얻어진 데이터를 수명 평가나 파괴 통계에서 주로 활용하는 와이블 분포식을 이용, 임의의 허용 파괴 확률에서의 허용인가 전계값을 추정, 안전성을 판단하기 위해 경년 열화데이터의 통계 처리 방법을 제안하였다. 그 결과, 경화제 비율이 증가하면 에폭시 경화물의 에스터화로 인해 가교 밀도가 증가함으로써 저온에서의 파괴 강도가 높아졌으며, 유리 전이 온도(Tg) 영역인 11$0^{\circ}C$ 부근에서는 분자 운동이 활발해짐으로써 급격히 파괴 강도가 저하하였다. 또한, 충진제를 첨가한 경우 접합 계면에 전자가 가속되어 전반적인 파괴 강도는 무충진에 비해 낮게 나타났으며, 실란 처리를 한 경우에는 계면 접합 상태가 개선되어 충진제만을 첨가한 시료보다 좋은 절연성을 나타냈다. 와이블 분포의 분석으로 부터 기기 절연의 허용 파괴 확률을 0.1 % 이하로 낮추기 위해서는 허용인가 전계값이 21.5 ㎹/cm 이하가 되어야함을 알 수 있었다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2002년도 추계종합학술대회
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• pp.779-783
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• 2002

변성기용 절연 재료로 사용되는 에폭시 수지를 시료로 선정, 5종의 배합비로 제작한 시편에 대해 절연 파괴 실험을 하며, 얻어진 데이터를 와이블 분포식을 이용, 경년 열화(經年劣和) 데이터의 통계 처리 방법을 제안하였다. 경화제 비율이 증가하면 에폭시 경화물의 에스터화로 인해 가교 밀도가 증가함으로써 저온에서의 파괴 강도가 높아졌으며, 유리 전이 온도(Tg) 영역인 11$0^{\circ}C$ 부근에서는 분자 운동이 활발해짐으로써 급격히 파괴 강도가 저하하였다. 또한, 충진제를 첨가한 경우 접합 계면에 전자가 가속되어 전반적인 파괴 강도는 무충진에 비해 낮게 나타났으며, 실란 처리를 한 경우에는 계면 접합 상태가 개선되어 충진제만을 첨가한 시료보다 좋은 절연성을 나타냈다. 와이블 분포의 분석으로부터 기기 절연의 허용 파괴 확률을 0.1% 이하로 낮추기 위해서는 허용인가 전계값이 21.5 MV/cm 이하가 되어야함을 알 수 있었다.

• 한국전기전자재료학회논문지
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• 제18권5호
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• pp.389-395
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• 2005

The etching technology of the high aspect ratio contact(HARC) is necessary at the critical contact processes of semiconductor devices. Etching the $SiO_{2}$ contact hole with the sub-micron design rule in manufacturing VLSI devices, the unexpected phenomenon of 'profile tilting' or 'bottom distortion' is often observed. This makes a short circuit between neighboring contact holes, which causes to drop seriously the device yield. As the aspect ratio of contact holes increases, the high C/F ratio gases, $C_{4}F_{6}$, $C_{4}F_{8}$ and $C_{5}F_{8}$, become widely used in order to minimize the mask layer loss during the etching process. These gases provide abundant fluorocarbon polymer as well as high selectivity to the mask layer, and the polymer with high sticking yield accumulates at the top-wall of the contact hole. During the etch process, many electrons are accumulated around the asymmetric hole mouth to distort the electric field, and this distorts the ion trajectory arriving at the hole bottom. These ions with the distorted trajectory induce the deformation of the hole bottom, which is called 'profile tilting' or 'bottom distortion'. To prevent this phenomenon, three methods are suggested here. 1) Using lower C/F ratio gases, $CF_{4}$ or $C_{3}F_{8}$, the amount of the Polymer at the hole mouth is reduced to minimize the asymmetry of the hole top. 2) The number of the neighboring holes with equal distance is maximized to get the more symmetry of the oxygen distribution around the hole. 3) The dual frequency plasma source is used to release the excessive charge build-up at the hole mouth. From the suggested methods, we have obtained the nearly circular hole bottom, which Implies that the ion trajectory Incident on the hole bottom is symmetry.