• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.65-65
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• 2012

Copper zinc tin sulfide ($Cu_2ZnSnS_4$, CZTS) is a very promising material as a low cost absorber alternative to other chalcopyrite-type semiconductors based on Ga or In because of the abundant and economical elements. In addition, CZTS has a band-gap energy of 1.4~1.5eV and large absorption coefficient over ${\sim}10^4cm^{-1}$, which is similar to those of $Cu(In,Ga)Se_2$(CIGS) regarded as one of the most successful absorber materials for high efficient solar cell. Most previous works on the fabrication of CZTS thin films were based on the vacuum deposition such as thermal evaporation and RF magnetron sputtering. Although the vacuum deposition has been widely adopted, it is quite expensive and complicated. In this regard, the solution processes such as sol-gel method, nanocrystal dispersion and hybrid slurry method have been developed for easy and cost-effective fabrication of CZTS film. Among these methods, the hybrid slurry method is favorable to make high crystalline and dense absorber layer. However, this method has the demerit using the toxic and explosive hydrazine solvent, which has severe limitation for common use. With these considerations, it is highly desirable to develop a robust, easily scalable and relatively safe solution-based process for the fabrication of a high quality CZTS absorber layer. Here, we demonstrate the fabrication of a high quality CZTS absorber layer with a thickness of 1.5~2.0 ${\mu}m$ and micrometer-scaled grains using two different non-vacuum approaches. The first solution-processing approach includes air-stable non-toxic solvent-based inks in which the commercially available precursor nanoparticles are dispersed in ethanol. Our readily achievable air-stable precursor ink, without the involvement of complex particle synthesis, high toxic solvents, or organic additives, facilitates a convenient method to fabricate a high quality CZTS absorber layer with uniform surface composition and across the film depth when annealed at $530^{\circ}C$. The conversion efficiency and fill factor for the non-toxic ink based solar cells are 5.14% and 52.8%, respectively. The other method is based on the nanocrystal dispersions that are a key ingredient in the deposition of thermally annealed absorber layers. We report a facile synthetic method to produce phase-pure CZTS nanocrystals capped with less toxic and more easily removable ligands. The resulting CZTS nanoparticle dispersion enables us to fabricate uniform, crack-free absorber layer onto Mo-coated soda-lime glass at $500^{\circ}C$, which exhibits a robust and reproducible photovoltaic response. Our simple and less-toxic approach for the fabrication of CZTS layer, reported here, will be the first step in realizing the low-cost solution-processed CZTS solar cell with high efficiency.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.20 no.5
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• pp.31-37
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• 2020

In this paper, we propose a novel sub-wavelength unit cell metamaterial absorber using multi-layer structure. The proposed absorber consists of 4 layers, and each layer has a spiral resonator connected by a via hole. This structure increases inductance of the unit cell, and therefore the resonant frequency can shift to lower frequency. We optimized the proposed absorber, and the electrical size of the unit cell is dramatically reduced to 0.013 times of the wavelength. The performance of the proposed absorber is demonstrated with full-wave simulation and measurement results. An absorption rate exceeding 97% is achieved at 1.74GHz. In addition, the proposed absorber attains a high absorption rate of 90% for different polarization and incident angles.

• Journal of Navigation and Port Research
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• v.30 no.9
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• pp.763-766
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• 2006

In this paper, the EM wave absorbers were designed and fabricated for X -band sensors using Carbon of dielectric material with CPE. The complex relative permittivity of samples is calculated by using measurement results of S-parameter. We simulated the double-layered type EM wave absorber with broad bandwidth using the measured complex relative permittivity by changing the thickness and layer, which was fabricated based on the simulated design The fabricated EM wave absorber consists of 1 mm first layer sheet facing metal with Carbon composition ratio 70 vol. % and 1.5 mm second layer sheet with Carbon composition ratio 60 vol. %. The measured results showed a good agreement to the simulated ones. It is found toot the optimized absorption ability of double-layered type EM wave absorber with thickness of 2.5 mm is higher than 10 dB from 7.8 GHz to 13.3 GHz.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• v.1
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• pp.297-300
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• 2006

In this paper, the EM wave absorbers were designed and fabricated for X-band sensors using Carbon of dielectric material with CPE. The complex relative permittivity of samples is calculated by the measured S-parameter data. We simulated the double-layered type EM wave absorber with broad bandwidth using the measured complex relative permittivity by changing the thickness and layer, which was fabricated based on the simulated design. The fabricated EM wave absorber consist of 1mm first layer sheet facing metal with Carbon composition ratio 70 vol% and 1.5 mm second layer sheet with Carbon composition ratio 60 vol%. The comparisons of simulated and measured results are good agreement. As a result, the optimized absorption ability of double-layered type EM wave absorber with thickness of 2.5 mm is higher than 10 dB from 7.8 GHz to 13.3 GHz.

• 한국신재생에너지학회:학술대회논문집
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• 2008.05a
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• pp.441-443
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• 2008

A non-vacuum process for fabrication of $CuInSe_2$ (CIS) absorber layer from the corresponding Cu, In solution precursors was described. Cu, In solution precursors was prepared by a room temperature colloidal route by reacting the starting materials $Cu(NO_3)_2$, $InCl_3$ and methanol. The Cu, In solution precursors were mixed with ethylcellulose as organic binder material for the rheology of the mixture to be adjusted for the doctor blade method. After depositing the mixture of Cu, In solution with binder on Mo/glass substrate, the samples were preheated on the hot plate in air to evaporate remaining solvents and to burn the organic binder material. Subsequently, the resultant CI/Mo/glass sample was selenized in Se evaporation in order to get a solar cell applicable dense CIS absorber layer. The CIS absorber layer selenized at $530^{\circ}C$ substrate temperature for 30 min with various Se gas evaporation temperature was characterized by XRD, SEM, EDS.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.2
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• pp.108-113
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• 2013

Chalcopyrite material $CuInSe_2$ (CIS) is known to be a very prominent absorber layer for high efficiency thin film solar cells. Current interest in the photovoltaic industry is to identify and develop more suitable materials and processes for the fabrication of efficient and cost-effective solar cells. Various processes have been being tried for making a low cost CIS absorber layer, this study obtained the CIS nanoparticles using commercial powder of 6 mm pieces for low cost CIS absorber layer by high frequency ball milling and cryogenic milling. And the CIS absorber layer was prepared by paste coating using milled-CIS nanoparticles in glove box under inert atmosphere. The chalcopyrite $CuInSe_2$ thin films were successfully made after selenization at the substrate temperature of $550^{\circ}C$ in 30 min, CIS solar cell of Al/ZnO/CdS/CIS/Mo structure prepared under various deposition process such as evaporation, sputtering and chemical vapor deposition respectively. Finally, we achieved CIS nanoparticles solar cell of electric efficient 1.74 % of Voc 29 mV, Jsc 35 $mA/cm^2$ FF 17.2 %. The CIS nanoparticles-based absorber layers were characterized by using EDS, XRD and HRSEM.

• Current Photovoltaic Research
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• v.9 no.4
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• pp.137-144
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• 2021

In this study, the microstructure of the CVD-fabricated Cu(In,Ga)Se₂ (CIGSe) absorber layer by simulating the stacking sequence used in a co-evaporation method, and changes solar cell performance were investigated. The absorber layer prepared by stacking CuSe and (In,Ga)Se between InSe is separated into Ga-free CuInSe₂ and Ga-rich CIGSe, and transformed to CIGSe by selenization heat treatment with slight improvement in the the solar cell efficiency. However, in CVD, since the supply of liquid Cu-Se is not as active as in the co-evaporation method, the nanoocrystalline layer containing a large amount of Ga remained independently in the absorption layer, which acted as a cause of the loss of J_SC and FF. Therefore, by using a precursor structure in which CuGa is sputter-deposited on a single layer of InSe deposited by CVD, performance parameters of V_OC, J_SC, and FF could be greatly improved.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 1994.10a
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• pp.59-68
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• 1994

A wide band design method of an double layerred electromagnetic wave absorber sintered ferrite which has a flat and an anti-grid shape layers is proposed and discussed. The wide band electomagnetic wave absorber can be designed by the equivalent material constants method for the each layer, As a result the wide band ferrite electonmagnetic wave absorber with the band width of 30MHz to 3670, 3680 or 3690MHz were designed under the tolerance limits of -20dB reflectivity.

• Steel and Composite Structures
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• v.21 no.2
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• pp.249-266
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• 2016

The interest of this article lies in the proposition of using bionic method to develop a new sound absorber and analyze the efficient of this absorber in a ski cabin. Inspired by the coupling absorption structure of the skin and feather of a typical silent flying bird - owl, a bionic coupling multi-layer structure model is developed, which is composed of a micro-silt plate, porous fibrous material and a flexible micro-perforated membrane backed with airspace. The finite element simulation method with ACTRAN is applied to calculate the acoustic performance of the multi-layer absorber, the vibration modal of the ski cabin and the sound pressure level (SPL) near the skier's ears before and after pasting the absorber at the flour carpet and seats in the cabin. As expected, the SPL near the ears was significantly reduced after adding sound-absorbing material. Among them, the model 2 and model 5 showed the best sound absorption efficiency and the SPL almost reduced 5 dB. Moreover, it was most effctive for the SPL reduction with full admittance configuration at both the carpet and the seats, and the carpet contribution seems to be predominant.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.285-285
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• 2011

EUVL (Extreme Ultra Violet Lithography) is one of competitive lithographic technologies for sub-30nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance since the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.