• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.9
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• pp.956-963
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• 2002

A linearly polarized folded type and H-shape slit folded type microstrip patch antenna at GPS(center frequency:1.575 GHz) were designed and fabricated by folding a conventional single $\lambda_{g}/2(\lambda_{g}:wavelength)$ rectangular patch a half along the length direction at the center of patch and inserting ground plane in the middle. As a result, two types of omnidirectional radiation patterns for E-plane (for zx-plane) in the direction of the length of patch and H-plane (for xy-plane) have been acquired. The experimental results show that the average gains of folded type and slit folded type for omnidirectional E-plane and H-plane are -1.5 dBd (-2.4 dBd) and -3.27 dBd(-2.5 dBd). Slit folded type microstrip patch antenna was more miniaturized than folded type microstrip patch antenna by 27.5 %. In case of slit folded type antenna, average gains of omnidirectional radiation pattern for E & H-plane are almost same.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2004.05a
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• pp.164-168
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• 2004

The vibration analysis of an axially moving membrane are investigated when the membrane has the two sets of in-plane boundary conditions, which are free and fixed constraints in the lateral direction. Since the in-plane stiffness is much higher than the out-of-plane stiffness, it is assumed during deriving the equations of motion that the in-plane motion is in a steady state. Under this assumption. the equation of out-of\ulcornerplane motion is derived, which is a linear partial differential equation influenced by the in-plane stress distributions. After discretizing the equation by using the Galerkin method, the natural frequencies and mode shapes are computed. In particular, we put a focus on analyzing the effects of the in-plane boundary conditions on the natural frequencies and mode shapes of the moving membrane.

• Structural Engineering and Mechanics
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• v.61 no.1
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• pp.65-76
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• 2017

Prediction of the characteristics of both in-plane and out-of-plane elastic waves within conducting nanoplates in the presence of bidirectionally in-plane magnetic fields is of interest. Using Lorentz's formulas and nonlocal continuum theory of Eringen, the nonlocal elastic version of the equations of motion is obtained. The frequencies as well as the corresponding phase and group velocities pertinent to the in-plane and out-of-plane waves are analytically evaluated. The roles of the strength of in-plane magnetic field, wavenumber, wave direction, nanoplate's thickness, and small-scale parameter on characteristics of waves are discussed. The obtained results show that the in-plane frequencies commonly grow with the in-plane magnetic field. However, the transmissibility of the out-of-plane waves rigorously depends on the magnetic field strength, direction of the propagated transverse waves, small-scale parameter, and thickness of the nanoplate. The criterion for safe transferring of the out-of-plane waves through the conducting nanoplate immersed in a bidirectional magnetic field is also explained and discussed.

• Journal of Korea Multimedia Society
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• v.22 no.5
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• pp.580-587
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• 2019

In this paper, a plane detection method using depth information is proposed. 3-D characteristics of a pixel are defined as a direction and length of a normal vector whose is calculated from a plane consisting of a local region centered on the pixel. Image coordinates of each pixel are transformed to 3-D coordinates in order to obtain the local planes. Regions of each plane are detected by calculating similarity of the 3-D characteristics. The similarity of the characteristics consists of direction and distance similarities of normal vectors. If the similarity of the characteristics between two adjacent pixels is enough high, the two pixels are regarded as consisting of same plane. Simulation results show that the proposed method using the depth picture is more accurate for detecting plane areas than the conventional method.

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.208-213
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• 2018

Epitaxial ($11{\bar{2}}0$) a-plane GaN films were grown on a ($1{\bar{1}}02$) R-plane sapphire substrate with photoresist (PR) masks using metal organic chemical vapor deposition (MOCVD). The PR mask with striped patterns was prepared using an ex-situ lithography process, whereas carbonization and heat treatment of the PR mask were carried out using an in-situ MOCVD. The heat treatment of the PR mask was continuously conducted in ambient $H_2/NH_3$ mixture gas at $1140^{\circ}C$ after carbonization by the pyrolysis in ambient $H_2$ at $1100^{\circ}C$. As the time of the heat treatment progressed, the striped patterns of the carbonized PR mask shrank. The heat treatment of the carbonized PR mask facilitated epitaxial lateral overgrowth (ELO) of a-plane GaN films without carbon contamination on the R-plane sapphire substrate. Thhe surface morphology of a-plane GaN films was investigated by scanning electron microscopy and atomic force microscopy. The structural characteristics of a-plane GaN films on an R-plane sapphire substrate were evaluated by ${\omega}-2{\theta}$ high-resolution X-ray diffraction. The a-plane GaN films were characterized by X-ray photoelectron spectroscopy (XPS) to determine carbon contamination from carbonized PR masks in the GaN film bulk. After $Ar^+$ ion etching, XPS spectra indicated that carbon contamination exists only in the surface region. Finally, the heat treatment of carbonized PR masks was used to grow high-quality a-plane GaN films without carbon contamination. This approach showed the promising potential of the ELO process by using a PR mask.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.3
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• pp.259-269
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• 2013

In this paper, we propose an SIW(Substrate Integrated Waveguide) multi-section E-plane transformer using air-holes for an SIW system with variable thicknesses. Air-holes are inserted into a SIW E-plane quarter wavelength transformer for matching an E-plane impedance discontinuity. A PSIW(Punched Substrate Integrated Waveguide) consisted of air-holes has an SIW characteristic impedance tunability because of reducing a equivalent shunt capacitance of the SIW. And, a PSIW multi-section E-plane transformer is implemented for improving a matching bandwidth by using the Chebyshev polynomial. The measurement results of PSIW double-section E-plane transformer show that the insertion loss($S_{21}$) is $1.57{\pm}0.11$ dB and input return loss($S_{11}$) is more than 15 dB from 11.45 GHz to 13.6 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.8 s.111
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• pp.746-752
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• 2006

In this paper, a compact partial H-plane filter with periodic structure is proposed. Guided wavelength of periodic structure' is reduced by slow wave effect. Cross-section and length of partial H-plane filter with periodic structure are considerably reduced by 75% and 30%, respectively, as compared with conventional E-plane filter. In addition, spurious responses of the bandpass filter are improved. To design bandpass filter with periodic structure, we have analyzed a periodic structure of partial H-plane waveguide and derived equations of the periodic filter. Measured results are in good agreement with simulated results.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.314.1-314.1
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• 2014

The properties of Ni/Au Ohmic contacts formed on nonpolar a-plane GaN grown on r-plane sapphire substrate with different tilt angles are investigated using current-voltage (I-V) measurements. To investigate the effects of pattern direction and size on Ohmic contact properties of a-plane GaN, transmission line method (TLM) patterns are formed either along c-axis and m-axis on nonpolar GaN surface with different size. I-V measurement results show that the size of TLM pattern and formation direction of electrode have an effect on the electrical properties of a-plane GaN. The large sized patterns show the relatively lower sheet resistance compared to the small sized patterns. In addition, the sheet resistance of a-plane GaN along m-axis shows lower values than that along the c-axis. Finally, the effects of miscut angle of r-sapphire substrate ($0.2^{\circ}$, 0.4oand $0.6^{\circ}$) on electrical properties of a-plane GaN will be discussed.

• Journal of the Korean Society for Precision Engineering
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• v.15 no.11
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• pp.121-129
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• 1998

In-plane ESPI(Electronic Speckle Pattern Interferometry) was devised to measure in-plane deformations and rotation of a specimen with laser in this study. ESPI is a optical measuring method to be able to measure the deformations of engineering components and materials in industrial fields. The conventional measuring methods of surface deformations such as the strain gauge have many demerits because they are contact and point-to-point measuring ones. But that ESPI is noncontact, nondestructive and whole field measuring method can overcome previous disadvantages. We used ESPI which is sensitive to in-plane displacement for measuring in-plane deformations of a disk. And the 4-frame phase shifting method was used for the quantitative analysis. First of all, the system calibration was done due to an in-plane rotation before getting deformations of a disk. Finally we showed good agreement between the experiment results and those of the FEA(Finite Element Analysis).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.151-152
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• 2010

극성 [0001] 방향으로 성장 된 질화물 기반의 LEDs (light emitting diodes) 는 분극현상에 의해 발생하는 강한 내부 전기장의 영향을 받게 된다. 이러한 내부 전기장은 양자우물 내의 전자와 정공의 공간적 분리를 야기하고 quantum confined Stark effect (QCSE) 에 의한 발광 파장의 적색 편이가 발생하며 양자효율의 저하를 가져오게 된다. 이러한 문제를 해결하기 위해 양자 우물구조를 GaN 의 m-plane (100) 이나 a-plane (110) 등 비극성면 위에 성장하려는 시도를 하고 있다. 그러나 비극성면의 비등방성 (anisotropy) 으로 인하여 결정성이 높은 비극성 GaN을 성장하는 데에는 많은 어려움이 있다. 비극성 a-plane GaN 의 결정성과 표면 거칠기의 향상을 위해 경사각을 가지는 r-plane 사파이어를 기판으로 이용하는 연구들이 많이 진행되어 있다 [1-4]. 그러나 r-plane 사파이어 기판의 경사각과 표면의 pit 형성에 관한 상관관계의 체계적인 연구는 상대적으로 많이 진행되지 않았다. 본 연구에서는 경사각을 가진 r-plane 사파이어 기판에 유기금속화학증착법을 (MOCVD) 이용하여 a-plane GaN 을 성장하였으며, 성장 시 기판의 경사각이 a-plane GaN의 성장 거동 및 표면형상에 미치는 영향을 분석하였다. 본 실험에서는r-plane에서 m-axis방향으로 0도에서 -0.65도의 경사각을 가지는 r-plane 사파이어 기판을 이용하였다. a-plane GaN 성장에는 고온 GaN 핵 형성층을 (nucleation layer) 이용하는 2단계 성장 법이 사용되었다 [5]. -0.37도 보다 크기가 큰 경사각을 가진 r-plane 사파이어에 성장된 a-plane GaN의 표면에는 수 ${\mu}m$ 크기의 삼각형 형태의 pit이 형성되었다. 사파이어의 경사각이 -0.37도에서 -0.65도로 증가하였을 경우에, GaN의 m방향 X-ray 록킹커브 반치폭은1763 arcsec에서 1515 arcsec로 감소하였으나 표면에 삼각형 pit의 밀도는 103 cm-2 이하에서 $2{\times}106$ cm-2으로 증가하였다. 이러한 r -plane 사파이어 기판의 경사각의 차이로 표면에 pit이 발생과 결정성변화의 원인을 확인하기 위해서, 여러가지 다른 경사각을 가진 사파이어 기판의 표면에 성장된 핵 형성층의 표면 양상을 확인하였다. 발표에서는 경사각의 차이에 따른 기판 표면에서의 원자 step 구조와 GaN 의 핵 형성 간의 상관관계에 대하여 구체적으로 논의할 것이다.