• Korean Journal of Materials Research
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• v.23 no.1
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• pp.53-58
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• 2013

Superhydrophobic $SiO_2$ layers with a micro-nano hierarchical surface structure were prepared. $SiO_2$ layers deposited via an electrospray method combined with a sol-gel chemical route were rough on the microscale. Au particles were decorated on the surface of the microscale-rough $SiO_2$ layers by use of the photo-reduction process with different intensities ($0.11-1.9mW/cm^2$) and illumination times (60-240 sec) of ultraviolet light. With the aid of nanoscale Au nanoparticles, this consequently resulted in a micro-nano hierarchical surface structure. Subsequent fluorination treatment with a solution containing trichloro(1H,2H,2H,2H-perfluorooctyl)silane fluorinated the hierarchical $SiO_2$ layers. The change in surface roughness factor was in good agreement with that observed for the water contact angle, where the surface roughness factor developed as a measure needed to evaluate the degree of surface roughness. The resulting $SiO_2$ layers revealed excellent repellency toward various liquid droplets with different surface tensions ranging from 46 to 72.3 mN/m. Especially, the micro-nano hierarchical surface created at an illumination intensity of $0.11mW/cm^2$ and illumination time of 60 sec showed the largest water contact angle of $170^{\circ}$. Based on the Cassie-Baxter and Young-Dupre equations, the surface fraction and work of adhesion for the micronano hierarchical $SiO_2$ layers were evaluated. The work of adhesion was estimated to be less than $3{\times}10^{-3}N/m$ for all the liquid droplets. This exceptionally small work of adhesion is likely to be responsible for the strong repellency of the liquids to the micro-nano hierarchical $SiO_2$ layers.

• Journal of the Korean Ceramic Society
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• v.41 no.3
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• pp.197-201
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• 2004

SiO$_2$ and SiON thick films were deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique on silicon wafer (100) using SiH$_4$ and $N_2$O as precursor gases. In this work, the influence of rf power, and rf bias power on the optical and physical properties of SiO$_2$ and SiON thick films is presented. The refractive index decreases with increasing rf power, and rf bias power. The refractive index of the films varied from 1.4493 to 1.4952 at wavelength at 1552 nm, with increasing rf power, the nitrogen content decreases while the oxygen content increases, in a manner that the O/N ratio increases approximately linearly.

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.934-940
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• 1994

Fibers of ZrO2-SiO2 system were prepared from the hydrolysis and condensation of Si(OC2H5)4 and Zr(OnC3H7)4 with different H2O/alkoxide molar ratios. It was found that fibers could be drawn in the viscosity range of 1~100 poise from HCl catalyzed solutions with lower water contents of the mole ratio H2O/alkoxide, r 2. The fibrous gels were converted into the corresponding oxide glass fibers by heating at 80$0^{\circ}C$. Mechanical test was performed on E, A and 20ZrO2-80SiO2 glass fibers reinforced cement in order to investigate the flexural strength. The flexural strength value of 20ZrO2-80SiO2 glass fibers reinforced cement was greater than those of E and A. The chemical durability of the fibers in alkaline solutions increased with ZrO2 content. The weight loss due to the corrosion by 2N-NaOH solutions at $25^{\circ}C$ for 160 hours was about 0.31$\times$10-2 mg/dm2 for the 20ZrO2-80SiO2 glass fibers, which was superior to that of Vycor glass.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.63.2-64
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• 2003

Epitaxial yttrium-stabilized HfO$_2$ thin films were deposited on p-type (100) Si substrates by pulsed laser deposition at a relatively lower substrate temperature of 550. Transmission electron microscopy observation revealed a fixed orientation relationship between the epitaxial film and Si; that is, (100)Si.(100)HfO$_2$ and [001]Si/[001]HfO$_2$. The film/Si interface is not atomically flat, suggesting possible interfacial reaction and diffusion, X-ray photoelectron spectrum analysis also revealed the interfacial reaction and diffusion evidenced by Hf silicate and Hf-Si bond formation at the interface. The epitaxial growth of the yttrium stabilized HfO$_2$ thin film on bare Si is via a direct growth mechanism without involoving the reaction between Hf atoms and SiO$_2$ layer. High-frequency capacitance-voltage measurement on an as-grown 40-A yttrium-stabilized HfO$_2$ epitaxial film yielded an dielectric constant of about 14 and equivalent oxide thickness to SiO$_2$ of 12 A. The leakage current density is 7.0${\times}$ 10e-2 A/$\textrm{cm}^2$ at 1V gate bias voltage.

• Bulletin of the Korean Chemical Society
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• v.18 no.2
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• pp.203-208
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• 1997

A series of MgO-SiO2 catalysts were prepared by coprecipitation from the mixed solution of magnesium chloride and sodium silicate. Some of the sample were modified with 1 N H2SO4 and used as modified catalysts. The addition of MgO to SiO2 caused the increase of acidity and the shift of O-H and Si-O stretching bands of the silanol group to a lower frequency in proportion to the MgO content. The acid structure of MgO-SiO2 agreed with that proposed by Tanabe et al.. Catalytic activity for 2-propanol dehydration increased in relation to the increase of acidity and band shift to a lower frequency.

• Journal of the Semiconductor & Display Technology
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• v.6 no.2 s.19
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• pp.15-18
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• 2007

Effects of $O_2$ flow during deposition on Si crystallization at low substrate temperature were studied. Silicon thin films were prepared on $SiO_2$ substrates in a low-pressure chemical vapor deposition chamber using a mixture of $SiH_4$ and $H_2$. In some cases $O_2$ was intentionally introduced during deposition. Growth of poly silicon was observed at the substrate temperature as low as $480^{\circ}C$ when $O_2$ was flowed during deposition implying that crystallization of Si was enhanced by $O_2$ flow. On the other hand, $O_2$ flow did not show any significant effects at higher substrate temperature, where deposition rate is relatively fast. Enhancement mechanism of Si crystallization by $O_2$ flow was suggested from these results.

• Journal of Environmental Science International
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• v.22 no.1
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• pp.73-81
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• 2013

The present work has been devoted to the catalytic reduction of $N_2O$ by $H_2$ with $Pt/SiO_2$ catalysts at very low temperatures, such as $110^{\circ}C$, and their nanoparticle sizes have been determined by using $H_2-N_2O$ titration, X-ray diffraction(XRD) and high-resolution transmission electron microscopy(HRTEM) measurements. A sample of 1.72% $Pt/SiO_2$, which had been prepared by an ion exchange method, consisted of almost atomic levels of Pt nanoparticles with 1.16 nm that are very consistent with the HRTEM measurements, while a $Pt/SiO_2$ catalyst possessing the same Pt amount via an incipient wetness technique did 13.5 nm particles as determined by the XRD measurements. These two catalysts showed a noticeable difference in the on-stream $deN_2O$ activity maintenance profiles at $110^{\circ}C$. This discrepancy was associated with the nanoparticle sizes, i.e., the $Pt/SiO_2$ catalyst with the smaller particle size was much more active for the $N_2O$ reduction. When repeated measurements of the $N_2O$ reduction with the 1.16 nm Pt catalyst at $110^{\circ}C$ were allowed, the catalyst deactivation occurred, depending somewhat on regeneration excursions.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.1
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• pp.36-40
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• 2003

The diamond-like nanocomposite (DLN) thin films were deposited on Si substrates using $CH_4/(C_2H_5O)_4Si/H_2$/Ar gas mixtures as source gases by the plasma enhanced chemical vapor deposition (PECVD). The chemical structure and microstructure of grown films were investigated and their tribological properties were evaluated by a ball-on-plate type tribometer. The deposited DLN films mainly consisted of diamond-like a-C:H and quartz-like a-Si:O networks. The DLN films had a good agreement with tribological coating applications due to their extremely low friction coefficients and low wear rates.

• The Bulletin of The Korean Astronomical Society
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• v.40 no.2
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• pp.58.4-59
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• 2015

We have performed single dish and VLBI monitoring observations of $H_2O$ and SiO masers toward the semi-regular variable star R Crateris using the Korean VLBI Network(KVN) 4 band receiving system. In the case of VLBI observations at 3 epochs, successful superposed maps of $H_2O$ and SiO masers were obtained on 2015 May by adopting the Source Frequency Phase Referencing(SFPR) method. These results enable us to investigate the development of outflow and asymmetric motions from SiO maser to $H_2O$ maser regions according to stellar pulsation which are closely related with a mass-loss process. Single dish monitoring observations were carried out from 2009 June to 2015 May. Intensity variations between $H_2O$ and SiO masers were investigated according to stellar phases together with peak velocity variations. We will compare the VLBI results with those of single dish.

• Journal of the Korean Ceramic Society
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• v.27 no.1
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• pp.79-85
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• 1990

A study on the oxidation of SiO2 sensing layer was done at 950, 1000, 105$0^{\circ}C$ under dry O2 atmosphere. The rate determining step around the oxide layer thickness, 1000$\AA$ was different with the oxidation temperature, as follows ; ⅰ) linear growth at 95$0^{\circ}C$ and ⅱ) parabolic growth at 100$0^{\circ}C$ and 105$0^{\circ}C$. The flatness of SiO2 film was observed within $\pm$1% and surface state charge density was reduced by annealing in N2 atmosphere. Finally, pH sensitivity of SiO2 film, in the range of pH 3-9, was 20mV/pH.