• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.5 no.1
• /
• pp.44-49
• /
• 1995

Abstract The surface of 6H - SiC bulk crystal grown by sublimation process was investigated by optical microscope observation. Since, in the 6H crystal growing, the crystal had the habitual step growth attitude such that the lateral growth rate along the random a - axis orientation was higher than that along the c - axis of the growth direction, then many steps were developed. There were, also, many micropipes on the surface in the form of as-like large voids. However, they were differenciated with pores and cross- sectional shape of them were close to the circle. In this study, many micropipes, planar defects and the growth steps appeared on the grown crystal surface were investigated.

• Journal of the Korean Ceramic Society
• /
• v.24 no.5
• /
• pp.500-506
• /
• 1987

In order to synthesize monodispersed spherical silica fine particles, we investigated the reaction of hydrolysis of 0.05∼4.0 mole Si(OC2H5)4-0.01∼7.60mole NH3 -0.24∼38.40 mole H2O-2.62∼16.88mole C2H5OH systems. The range of the composition of solution which spherical silica particles were formed was enlarged according to an increase in concentration of Si(OC2H5)4. Larger particles were obtained at higher molar ratios of Si(OC2H5)4/C2H5OH, NH3/H2O and H2O/Si(OC2H5)4 and at a lower reaction temperature.

• Journal of the Korean Ceramic Society
• /
• v.29 no.9
• /
• pp.681-688
• /
• 1992

Ultrafine Si3N4 and Si3N4+SiC mixed powders were synthesized through thermal plasma chemical vapor deposition(CVD) using a hybrid plasma, which was characterized by the supersposition of a radio-frequency plasma and arc jet. The reactant SiCl4 was injected into an arc jet and completely decomposed in a hybrid plasma, and the second reactant CH4 and/or NH3 mixed with H2 were injected into the tail flame through double stage ring slits. In the case of ultrafine Si3N4 powder synthesis, reaction efficiency increased significantly by double stage injection compared to single stage one, although crystallizing behaviors depended upon injection speed of reactive quenching gas (NH3+N2) and injection method. For the preparation of Si2N4+SiC mixed powders, N/C composition ratio could be controlled by regulating the injection speed of NH3 and/or CH4 reactant and H2 quenching gas mixtures as well as by adjusting the reaction space.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.2
• /
• pp.128-131
• /
• 2009

Silicon carbide (SiC) has attracted significant attention for high frequency, high temperature and high power devices due to its superior properties such as the large band gap, high breakdown electric field, high saturation velocity and high thermal conductivity. We performed Al ion implantation processes on n-type 4H-SiC substrate using a SILVACO ATHENA numerical simulator. The ion implantation model used Monte-Carlo method. We simulated the effect of channeling by Al implantation in both 0 off-axis and 8 off-axis n-type 4H-SiC substrate. We have investigated the effect of varying the implantation energies and the corresponding doses on the distribution of Al in 4H-SiC. The controlled implantation energies were 40, 60, 80, 100 and 120 keV and the implantation doses varied from $2{\times}10^{14}$ to $1{\times}10^{15}\;cm^{-2}$. The Al ion distribution was deeper with increasing implantation energy, whereas the doping level increased with increasing dose. The effect of post-implantation annealing on the electrical properties of Al-implanted p-n junction diode were also investigated.

• Journal of Korean Vacuum Science & Technology
• /
• v.6 no.3
• /
• pp.133-138
• /
• 2002

The growth of Au films grown on a Si(100)-2x1 surface and Si films on a Ge(100)-2x1 substrate is studied using Positron-annihilation induced Auger Electron Spectroscopy(PAES), Electron induced Auger Electron Spectroscopy(EAES), and Low Energy Electron Diffraction(LEED). Previous work has shown that PAES is almost exclusively sensitive to the top-most atomic layer due to the trapping of positrons in an image potential well just outside the surface before annihilation. This surface specificity is exploited to profile the surface atomic concentrations during the growth of Au on Si(100) and Si on Ge(100) and EAES provides concentrations averaged over the top 3-10 atomic layers simultaneously. The difference in the probe-depth makes us possible to use PAES and EAES in a complementary fashion to estimate the surface and near surface concentration profiles. The results show that (i) the intermixing of Au and Si atoms occurs during the room temperature deposition, (ii) the segregated Ge layer is observed onto the Si layers deposited at 300k. In addition, the prior adsorption of hydrogen prevents the segregation of Ge on top of the deposited Si and that the hydrogen adsorption is useful in growing a thermally stable structure.

• Korean Journal of Materials Research
• /
• v.20 no.9
• /
• pp.451-456
• /
• 2010

A promising candidate material for a $H_2$ permeable membrane is SiC due to its many unique properties. A hydrogen-selective SiC membrane was successfully fabricated on the outer surface of an intermediate multilayer $\gamma-Al_2O_3$ with a graded structure. The $\gamma-Al_2O_3$ multilayer was formed on top of a macroporous $\alpha-Al_2O_3$ support by consecutively dipping into a set of successive solutions containing boehmite sols of different particle sizes and then calcining. The boehmite sols were prepared from an aluminum isopropoxide precursor and heated to $80^{\circ}C$ with high speed stirring for 24 hrs to hydrolyze the precursor. Then the solutions were refluxed at $92^{\circ}C$ for 20 hrs to form a boehmite precipitate. The particle size of the boehmite sols was controlled according to various experimental parameters, such as acid types and acid concentrations. The topmost SiC layer was formed on top of the intermediate $\gamma-Al_2O_3$ by pyrolysis of a SiC precursor, polycarbosilane, in an Ar atmosphere. The resulting amorphous SiC-on-$Al_2O_3$ composite membrane pyrolyzed at $900^{\circ}C$ possessed a high $H_2$ permeability of $3.61\times10^{-7}$ $mol{\cdot}m^{-2}{\cdot}s^{-1}{\cdot}Pa^{-1}$ and the $H_2/CO_2$ selectivity was much higher than the theoretical value of 4.69 in all permeation temperature ranges. Gas permeabilities through a SiC membrane are affected by Knudsen diffusion and a surface diffusion mechanism, which are based on the molecular weight of gas species and movement of adsorbed gas molecules on the surface of the pores.

• Journal of Information Display
• /
• v.10 no.1
• /
• pp.33-36
• /
• 2009

A new hybrid silicon thin-film transistor (TFT) fabrication process using the DPSS laser crystallization technique was developed in this study to realize low-temperature poly-Si (LTPS) and a-Si:H TFTs on the same substrate as a backplane of the active-matrix liquid crystal flat-panel display (AMLCD). LTPS TFTs were integrated into the peripheral area of the activematrix LCD panel for the gate driver circuit, and a-Si:H TFTs were used as a switching device of the pixel electrode in the active area. The technology was developed based on the current a-Si:H TFT fabrication process in the bottom-gate, back-channel etch-type configuration. The ion-doping and activation processes, which are required in the conventional LTPS technology, were thus not introduced, and the field effect mobility values of $4\sim5cm^2/V{\cdot}s$ and $0.5cm^2/V{\cdot}s$ for the LTPS and a-Si:H TFTs, respectively, were obtained. The application of this technology was demonstrated on the 14.1" WXGA+(1440$\times$900) AMLCD panel, and a smaller area, lower power consumption, higher reliability, and lower photosensitivity were realized in the gate driver circuit that was fabricated in this process compared with the a-Si:H TFT gate driver integration circuit

• Journal of the Korean Ceramic Society
• /
• v.33 no.7
• /
• pp.785-792
• /
• 1996

Formation of Solid Solution and Microstructure in Processureless sintered SiC-AlN compo-site using oxides as a sintering aid at 185$0^{\circ}C$ and 195$0^{\circ}C$ Regardless of SiC/AlN ratio in composition most of sintered specimens showed he complex structure mixed with 2H solid solution and SiC particles. High sintering temperature and large AlN content in starting composition enhanced the formation of 2H solid solution in sintered specimen 2H solid solution showed the spherical shape and core-rim structure. AlN content in the core is higher than that in the rim but SiC content . The size of 2H solid solution on fracture showed the transgranular fracture mode compared with the dispersed SiC particles which showed the intergranular fracture mode.

• Journal of the Korean Ceramic Society
• /
• v.30 no.1
• /
• pp.46-54
• /
• 1993

$\beta$-SiC was chemically vapor deposited by pyrolysis of MTS＋H2 gas mixture. The experiments were conducted in the temperature range of 1100~150$0^{\circ}C$ with a r.f. induction furnace under atmospheric pressure. The IR, XRD, EDS and AES analysis revealed that the free Si was always codeposited with SiC below 140$0^{\circ}C$, regardless of the total flow rate and MTS concentration, whereas $\beta$-SiC single phase was deposited at 150$0^{\circ}C$. C3H8 or CH2Cl2 as an excess C sources, was supplied with MTS in order to obtain stoichiometric SiC at low temperature. With the addition of C3H8 or CH2Cl2, the deposition rate was increased and $\beta$-SiC single phase could be deposited even at temperature as low as 110$0^{\circ}C$. In the absence of C3H8 or CH2Cl2, the microhardness of the layer was quite low (

• Korean Journal of Materials Research
• /
• v.8 no.6
• /
• pp.545-550
• /
• 1998

Phase reactions at W /6H- SiC interfaces during heat treatments were investigated by X- Ray diffractometer and transmission electron microscopy. No detectable reactions were found after annealing at up to 900$0^{\circ}C$ whereas formation of $W_5Si_3$ and $W_2C$$0^{\circ}C$ This result is consistent with a previous report that the reactions between 3C-SiC and W occurs at llOOoe, and suggests that $W_5Si_3$ and $W_2C$ are the stable phases in this temperature range.