• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2003.05a
• /
• pp.501-504
• /
• 2003

In this paper, for enhancement of property on a-Si:H TFTs We measure interface characteristics of ferroelectrics thin film and a-Si:H thin film. First, SrTiO$_3$ thin film is deposited bye-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at 150$^{\circ}C$ ∼ 600$^{\circ}C$. Dielectric characteristics of deposited SrTiO$_3$ films are very good because dielectric constant shows 50∼100 and breakdown electric field are 1∼1.5MV/cm. a-SiN:H,a-Si:H(n-type a-Si:H) are deposited onto SrTiO$_3$ film to make MFNS(Metal/ferroelectric/a-SiN:H/a-Si:H) by PECVD. After the C-V measurement for interface characteristics, MFNS structure shows no difference with MNS(Metal/a-SiN:H/a-Si:H) structure in C-V characteristics but the insulator capacitance value of MFNS structure is much higher than the MNS because of high dielectric constant of ferroelectrics.

• Proceedings of the KIEE Conference
• /
• 1995.07c
• /
• pp.1019-1021
• /
• 1995

Light induced degradation of hydrogenated amorphous silicon(a-Si:H) are related to the number of weak dangling bonds which are thought to be responsible for the Staebler-Wronski effects, and caused the many photoelectric problems in applications of thin film transistors and solar cell, etc. In this paper, we deposited fluorinated amorphous silicon films(a-Si:H;F) with $SiH_4$ and $SiF_4$ gas mixture and investigated the effects of fluorine atoms on the evoluations of the crystallinity and improvements of light instability. We have found that micro-crystallinity produced in a-SI:H;F films and marked maximum value of 22% at the flow rate of $SiH_4:SiF_4$=2:10 sccm by UV spectrophotometer measurement, while n-Si:H film deposited with only $SiH_4$ gas showed no crystallinity. Light-induced degradation property of a-Si:H;F films is also improved which is mainly due to the etching effects of fluorine atoms on the weak Si-Si bonds and unstable hydrogen bonds. It is considered that involving fluorine atoms in a-Si:H films may contribute to the suppression of light-induced degradation and evolution of micro-crystallinity.

• Korean Journal of Metals and Materials
• /
• v.50 no.8
• /
• pp.569-573
• /
• 2012

In order to understand the difference in SiC deposition between the $CH_3SiCl_3-H_2$ and $C_3H_8-SiCl_4-H_2$ systems, we calculate the phase stability among ${\beta}$-SiC, graphite and silicon. We constructed the phase-diagram of ${\beta}$-SiC over graphite and silicon via computational thermodynamic calculation considering pressure (P), temperature (T) and gas composition (C) as variables. Both P-T-C diagrams showed a very steep phase boundary between the SiC+C and SiC region perpendicular to the H/Si axis, and also showed an SiC+Si region with a H/Si value of up to 6700 in the $C_3H_8-SiCl_4-H_2$, and 5000 in the $CH_3SiCl_3-H_2$ system. This difference in phase boundaries is explained by the ratio of Cl to Si, which is 4 for the $C_3H_8-SiCl_4-H_2$ system and 3 for the $C_3H_8-SiCl_4-H_2$ system. Because the C/Si ratio is fixed at 1 in the $CH_3SiCl_3-H_2$ system while it can be variable in the $C_3H_8-SiCl_4-H_2$ system, the functionally graded material is applicable for better mechanical bonding during SiC coating on graphite substrate in the $C_3H_8-SiCl_4-H_2$ system.

• Journal of Sensor Science and Technology
• /
• v.2 no.1
• /
• pp.95-99
• /
• 1993

a-Si : H TFTs for image sensor have been fabricated and their operational characteristics have been investigated. Hydrogenated amorphous silicon nitride(a-SiN : H) films were used for the gate insulator and $n^{+}$-a-Si : H films were depostied for the source and drain contact. The thicknesses of a-SiN : H and a-Si : H films were $2000{\AA}$, respectively and the thickness of $n^{+}$-a-Si : H film was $500{\AA}$. Also the channel length and channel width of a-Si : H TFTs were $50{\mu}m$ and $1000{\mu}m$, respectively. The ON/OFF current ratio, threshold voltage, and field effect mobility of fabricated a-Si : H TFTs were $10^{5}$, 6.3 V, and $0.15cm^{2}/V{\cdot}s$, respectively.

• Journal of the Korean Vacuum Society
• /
• v.10 no.1
• /
• pp.104-111
• /
• 2001

B-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared by plasma-enhanced chemical-vapor deposition in a gas mixture of $SiH_4, CH_4,\;and\; B_2H_6$. Physical and chemical properties of a-SiC:H films grown with varing the ratio of $B_2H_6/(SiH_4+CH_4)$ were characterized with various analysis methods including scanning electron microscopy (SEM), X-ray diffractometry (XRD), Raman spectroscopy, Fourier-transform infrared (FTIR) spectroscopy, secondary ion mass spectroscopy (SIMS), UV absorption CH_4spectroscopy and electrical conductivity measurements. With the B-doping concentration, the doping efficiency and the micro-crystallinity were decreased and the film became amorphous when $B_2H_6/(SiH_4{plus}CH_4)$ was over $5{\times}10^{-3}$. The addition of $B_2H_6$ gas during deposition decreased the H content in the film by lowering the quantity of Si-C-H bonds. Consequently, the optical band gap and the activation energy of a-SiC:H films were decreased with increasing the B-doping level.

• 한국신재생에너지학회:학술대회논문집
• /
• 2009.06a
• /
• pp.28-30
• /
• 2009

이종접합태양전지에서 p a-Si:H/c-Si의 p a-Si:H의 증착 조건인 $H_2/SiH_4$ 비율, $B_2H_6$의 농도를 변화 시키며 실험하여 이 따라 계면 특성 변화를 연구하였다. pa-Si:H의 $H_2/SiH_4$ 비율이 상승할수록 carrier lifetime이 증가하다 다시 감소하는 경향을 나타내었다. 이는 $H_2/SiH_4$의 비율 중 효과적으로 웨이퍼표면을 효과적으로 passivation하는 지점이 있는 것으로 보인다. $B_2H_6$의 농도는 상승할수록 carrier lifetime이 줄어드는 경향을 보였다. $B_2H_6$에서 농도가 올라감에 웨이퍼 표면의 defect로 작용했을 것으로 생각된다. 이에서 몇몇의 조건으로 태양전지를 제작한 결과 $H_2/SiH_4$ 비율에 따라서는 carrier lifetime은 효율에 그 영향이 미미한 것으로 조사되었고, $B_2H_6$의 농도가 낮을수록 개방전압은 상승하는 결과를 얻어 도핑 농도가 효율에 직접적인 형향을 주는 것으로 나타났다.

• Journal of the Korean Vacuum Society
• /
• v.8 no.1
• /
• pp.51-54
• /
• 1999

Hydrogenated amorphous silicon (a-Si:H) films are fabricated by Argon radical annealing (ArRA). The deposition rate of continuously deposited a-Si:H film is 1.9 $\AA$/s. As ArRA time are increased to 0.5 and 1 minute, the deposition rate are increased to 2.8 $\AA$/s and 3.3 $\\AA$/s. The deposition rate of a-si:H films with 2 and 3 minutes ArRA time are 3.3 $\AA$/s. As the ArRA time is increased, the optical band gap and the hydrogen contents in the a-Si:H films are increased and slightly decreased. The light-induced degradation of ArRA treated a-Si:H films are less than that of continuously deposited a-Si:H film. The dark conductivity and the conductivity activation energy ($E_a$) of continuously deposited a-Si:H film are decreased to 1/25 in room temperature and increased to 0.09eV By 1 hour light soaking, respectively. The dark conductivity and $E_a$ of ArRA treated a-Si:H film decreased to 1/3 in room temperature and increased to 0.03eV by 1 hour light soaking, respectively. We could improve the stability of a-Si:H films under the light soaking by ArRA technique and discussed the microscopic process of ArRA technique.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.11
• /
• pp.70-77
• /
• 1998

Ni/SiC Schottky diodes have been fabricated using epitaxial 4H-SiC and 6H-SiC wafers. The epitaxial n-type layers were grown on $n^{+}$ substrates, with a doping density of 4.0$\times$10$^{16}$ c $m^{-3}$ and a thickness of 10${\mu}{\textrm}{m}$. Oxide-termination has been adopted in order to obtain high breakdown voltage and low leakage current. The fabricated Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes show excellent rectifying characteristics up to the measured temperature range of 55$0^{\circ}C$. In case of oxide-terminated Schottky barrier diodes, breakdown voltage of 973V(Ni/4H-SiC) and 920V(Ni/6H-SiC), and a very low leakage current of less than 1nA at -800V has been observed at room temperature. On non-terminated Schottky barrier diodes, breakdown voltages were 430V(Ni/4H-SiC) and 160v(Ni/6H-SiC). At room temperature, SBH(Schottky Barrier Height), ideality factor and specific on-resistance were 1.55eV, 1.3, 3.6$\times$10$^{-2}$ $\Omega$.$\textrm{cm}^2$ for Ni/4H-SiC Schottky barrier diodes, and 1.24eV, 1.2, 2.6$\times$10$^{-2}$$\Omega$.$\textrm{cm}^2$/ for Ni/SH-SiC Schottky barrier diodes, respectively. These results show that both Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes are very promising for high-temperature and high power applications.s..

• Korean Journal of Materials Research
• /
• v.9 no.10
• /
• pp.1006-1011
• /
• 1999

B-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared by plasma-enhanced chemical-vapor deposition in a gas mixture of $SiH_4$, $CH_4$ and $B_2H_6$. Microstructures and chemical properties of a-SiC:H films grown with varing the volume ratio of $CH_4$ to $SiH_4$ were characterized with various analysis methods including scanning electron microscopy(SEM), X-ray diffractometry(XRD), Raman spectroscopy, Fourier-transform infrared (FTIR) spectroscopy. X-ray photoelectron spectroscopy(XPS), UV absorption spectroscopy and photoconductivity measurements. While Si:H films grown without $CH_4$ showed amorphous state, the addition of $CH_4$ during deposition enhanced the development of a microcrystalline phase. By introducing C atoms into the film, Si-Si and Si--$\textrm{H}_{n}$ bonds of a -Si:H films were gradually replaced by Si-C, C-C, and Si--$\textrm{C}_{n}\textrm{H}_{m}$ bonds. Consequently, the electrical resistivity and optical bandgap of a-SiC:H films were increased with the C concentration in the film.

• Journal of the Korean institute of surface engineering
• /
• v.29 no.5
• /
• pp.407-414
• /
• 1996

We have investigated the effects of H atoms on thin film growth processes and surface reactions. In the oxidation of Si, Si surfaces are passivated against the $O_2$ adsorption by terminating dangling bonds with H atoms. Moreover, the existence of Si-H bonds on Si(100) surfaces enhances the structural relaxation of Si-O-Si bonds due to a charge transfer from Si-Si back bonds. In the heteroepitaxial growth of a Si/Ge/Si(100) system, H atoms suppress the segregation of Ge atoms into Si overlayers since the exchange of Ge atoms with Si atoms bound with H must be accompanied with breaking of Si-H bonds. However, 3-dimensional island growth is also promoted by atomic H irradiation, which is considered to result from the suppression of surface migration of adsorbed reaction species and from the lowering of step energies by the H termination of dangling bonds.