• Korean Journal of Materials Research
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• v.7 no.10
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• pp.914-918
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• 1997

MBS에 의해(001)GaAs기판 위에 성장된 Zn$_{1-x}$Co$_{x}$Se(x=1.0, 7.4, 9.5 %)반도체 박막과 (ZnSe/FeSe)반도체 초격자 박막의 미세구조를 투과전자현미경을 이용하여 연구하였다. Zn$_{1-x}$Co$_{x}$Se 박막 시편의 경우, 박막과 기판 사이의 격자 불일치때문에 a/2<110>형태의 버거즈 벡터를 가지는 부정합 전위를 관찰하였다. 모든 Zn$_{1-x}$Co$_{x}$Se 박막과 기판의 계면은 뚜렷이 구별되었고, 계면에서 산화물이나 이물질이 존재하지 않았다. 또한, (ZnSe/FeSe)초격자를 성장시키기 전에 GaAs기판 위에 ZnSe바닥층을 넣음으로써 고품질의 (ZnSe/FeSe)초격자를 얻었다. (ZnSe/FeSe)초격자에 있는 FeSe는 섬아연광 결정구조로 존재하였다.

• Current Photovoltaic Research
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• v.10 no.2
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• pp.39-48
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• 2022

A Se-containing Cu/SnSe₂/ZnSe precursor was employed to introduce S to the precursor to form Cu₂ZnSn(S,Se)₄ (CZTSSe) film. The morphology of CZTSSe films strongly varied with two different pre-annealing environments: S and N₂. The CZTSSe film with S pre-annealing showed a dense morphology with a smooth surface, while that with N₂ pre-annealing showed a porous film with a plate-shaped grains on the surface. CuS and Cu₂Sn(S,Se)₃ phases formed during the S pre-annealing stage, while SnSe and Cu₂SnSe₃ phases formed during the N₂ pre-annealing stage. The SnSe phase formed during N₂ pre-annealing generated SnS₂ phase that had plate shape and severely aggravated the morphology of CZTSSe film. The power conversion efficiency of the CZTSSe solar cell with S pre-annealing was low (1.9%) due to existence of Zn(S.Se) layer between CZTSSe and Mo substrate. The results indicated that S pre-annealing of the precursor was a promising method to achieve a good morphology for large area application.

• Journal of Powder Materials
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• v.19 no.6
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• pp.442-445
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• 2012

The quantum dots (QD) have unique electrical and optical properties due to quantum dot confinement effect. The optical properties of QDs are decided by various synthesis conditions. In a prior QDs study, a study on the QDs size with synthesis condition such as synthesis time and temperature is being extensively researched. However, the research on QDs size with composition ratio has hitherto received scant attention. In order to evaluate the ratio dependence of CdSe crystal, synthesis ratio of Se precursor is changed from 16.7 mol%Se to 44 mol%Se. As the increasing Se ratio, the band gap was increased. This is caused by red shift of emission. We confirmed optical property of CdSe QDs with composition ratio.

• Journal of Practical Agriculture & Fisheries Research
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• v.7 no.1
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• pp.118-130
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• 2005

This study was conducted to evaluate the spent composts of selenium-enriched mushrooms as a feed selenium Source. Total selenium (Se) contents and Se profiles in the spent mushroom composts (SMC) were determined. In addtion, we also investigated the metabolism in relation to Se accumulation in the mushroom. Mushrooms used in this study were Flammulina velutipes and Se enriched mushrooms were grown for 60 days by adding 2 mg of inorganic Se (Na₂SeO₃) per kg of mushroom composts (MC) on as-fed basis and it was compared with mushrooms not to add Se to the MC. Total Se contents for Se-treated mushrooms were significantly increased (P<0.0001) by 20-fold (4.51 ㎍/g of dry) compared to Se-untreated (0.23 ㎍/g of dry). On the contrary, organic Se proportion was significantly lower (P<0.0001) in the Se-treated mushroom (72.3%) than Se-untreated (100%, not analytically detected of inorganic Se). Se distribution upon a length in the Se-treated mushrooms was the highest in the bottom part (6.86 ㎍/g of dry) near to MC, and top and middle parts were significantly lower (3.71 and 3.01 ㎍/g of dry, respectively) than the bottom (P<0.001). In the SMC from Se-treated mushrooms, a high concentration of Se (5.04 ㎍/g of dry) was still remained, but that from Se-untreated mushrooms was significantly low (P<0.0001) as 0.08 ㎍/g of dry. Se-treated SMC showed a high rate of organic Se (65.67%), suggesting that most of inorganic Se in the SMC was converted to organic Se by mushroom mycelia, and Se-untreated SMC showed 100% of organic Se, not being detected of inorganic Se. Prior to mycelia inoculation in the mushroom culture, the sterilization of MC brought approximately 18% of Se loss in the MC. This result is in accordance with facts generally known that Se is weak in the high temperature and it is consequently volatilized under that condition. Apparent and net accumulation rates (%) for Se into mushrooms were 14.81 and 10.14%, respectively and their difference (4.67%) is considered that it is due to the volatilization into the air via metabolic process of mushroom itself. From the result of this study, inorganic Se addition to MC for mushroom improved the Se content in the mushroom and SMC from Se-enriched mushrooms contained a high concentration of Se. Mycelium and fruiting body from mushrooms converted inorganic Se in MC to organic Se, indicating a high proportion of organic Se in the mushroom and SMC. Therefore, Se in Se-enriched mushroom and SMC was recognized as Se sources of food for human as well as feed for livestock.

• Asian-Australasian Journal of Animal Sciences
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• v.7 no.1
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• pp.83-89
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• 1994

The effects of inorganic selenium (Se), selenate and selenite on Se balance levels in the different ruminal fluid fractions were studied using Japanese Corriedale wethers with an average body weight of 47 kg. A $3{\times}3$ Latin square design was used with three animal, three periods and three treatments. In each period, there was 7 d dietary adjustment followed by 5 d total collection of urine and feces. Ruminal fluid samples were obtained at 0, 1, 3, 5 and 7 h postprandially on the final day of the collection period. The three dietary treatments were: (1) without Se supplementation (control); (2) with Se supplement as sodium selenate; and (3) sodium selenite at a rate of 0.2 mg Se/kg dietary DM. The basal diet was timothy hay (Phleum pratense L.) fed 2% of body weight/d. Results indicated that Se balance were higher (p < 0.05) for those animals under supplementation than those animals under control. Overall data gathered showed a similar digestion balance of selenate and selenite in sheep. Inorganic Se, both selenate and selenite produced positive Se contents of the ruminal feed particles and protozoa. Bacterial Se increased (p < 0.05) on the first three hours post-prandially in Se supplemented diets. Gross ruminal fluid fraction, although there was improvement on their Se content under the supplemented diets, the changes were insignificant over the control. free inorganic Se and Se in soluble protein of the ruminal fluid were not significantly different for selenate and selenite. Most of the Se in the ruminal fluids of the animals under supplementation were insoluble, indicating the influence of rumen environments on Se bioavaliability.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.96-98
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• 2009

This report summarizes our recent efforts to produce large-grained CIGS materials from porous nanoparticle thin films. In our approach, a $Cu_xSe$ nanoparticle colloid were first prepared by reacting a mixture of CuI in pyridine with $Na_2Se$ in methanol at reduced temperature. purified colloid was sprayed onto heated molybdenum-coated sodalime glass substrates to form thin film. After thermal processing of the thin film under a selenium ambient. $Cu_xSe$ colloid and thin film were characterized by scanning electron microscopy, x-ray diffraction. The optical(direct) band gap energy of $Cu_xSe$ thin films is 1.5 eV.

• ETRI Journal
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• v.34 no.5
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• pp.779-782
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• 2012

$CuIn_{1-x}Ga_xSe_2$ (CIGS) thin films are grown on Mo/soda lime glass using a reactive sputtering process in which a Se cracker is used to deliver reactive Se molecules. The Cu and $(In_{0.7}Ga_{0.3})_2Se_3$ targets are simultaneously sputtered under the delivery of reactive Se. The effects of Se flux on film composition are investigated. The Cu/(In+Ga) composition ratio increases as the Se flux increases at a plasma power of less than 30 W for the Cu target. The (112) crystal orientation becomes dominant, and crystal grain size is larger with Se flux. The power conversion efficiency of a solar cell fabricated using an 800-nm CIGS film is 8.5%.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.84-84
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• 2003

The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, I$_2$ (D$^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3meV The exciton peak, lid, at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy. The I$_1$$\^$d/ peak was dominantly observed in the ZnSe/GaAs:Se epilayer treated in the Se-atmosphere. This Se-atmosphere treatment may convert the ZnSe/GaAs:Se epilayer into the p-type. The SA peak was found to be related to a complex donor like a (V$\sub$se/ - V$\sub$zn/) - V$\sub$zn-/

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.120-123
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• 2003

The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, $I_2$ ($D^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3 meV. The exciton peak, $I_1^d$, at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy. The $I_1^d$ peak was dominantly observed in the ZnSe/GaAs:Se epilayer treated in the Se-atmosphere. This Se-atmosphere treatment may convert the ZnSe/GaAs:Se epilayer into the p-type. The SA peak was found to be related to a complex donor like a $(V_{Se}-V_{Zn})-V_{Zn}$.

• Korean Journal of Materials Research
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• v.21 no.10
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• pp.550-555
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• 2011

A high-quality CIGS film with a selenization process needs to be developed for low-cost and large-scale production. In this study, we used $Cu_2In_3$, CuGa and $Cu_2Se$ sputter targets for the deposition of a precursor. The precursor deposited by sputtering was selenized in Se vapor. The precursor layer deposited by the co-sputtering of $Cu_2In_3$, CuGa and $Cu_2Se$ showed a uniform distribution of Cu, In, Ga, and Se throughout the layer with Cu, In, CuIn, CuGa and $Cu_2Se$ phases. After selenization at $550^{\circ}C$ for 30 min, the CIGS film showed a double-layer microstructure with a large-grained top layer and a small-grained bottom layer. In the AES depth profile, In was found to have accumulated near the surface while Cu had accumulated in the middle of the CIGS film. By adding a Cu-In-Ga interlayer between the co-sputtered precursor layer and the Mo film and adding a thin $Cu_2Se$ layer onto the co-sputtered precursor layer, large CIGS grains throughout the film were produced. However, the Cu accumulated in the middle of CIGS film in this case as well. By supplying In, Ga and Se to the CIGS film, a uniform distribution of Cu, In, Ga and Se was achieved in the middle of the CIGS film.