• Corrosion Science and Technology
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• 제15권3호
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• pp.129-134
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• 2016

The effects of Ti on the high temperature oxidation of Ni-based superalloys were investigated by cyclic oxidation at $850^{\circ}C$ and $1000^{\circ}C$. The oxide scale formed at $850^{\circ}C$ consists of $Cr_2O_3$, $Al_2O_3$, and $NiCr_2O_4$ layers, while a continuous $Al_2O_3$ layer was formed at $1000^{\circ}C$. The oxidation rate of the alloy with higher Ti content was higher than the alloy with less Ti content at $850^{\circ}C$, possibly due to the increase in the metal vacancy concentration in the $Cr_2O_3$ layer involved by incorporation of $Ti^{4+}$. However, Ti improved the oxidation resistance of the superalloy at $1000^{\circ}C$ by reducing oxygen vacancy concentration in $Al_2O_3$ layer.

• 한국세라믹학회지
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• 제39권11호
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• pp.1108-1112
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• 2002

산화물 제어봉 물질로서 $Dy_xTi_yO_z$ 소결체를 powder process에 의해 제조하였다. $Dy_2O_3+TiO_2$ 혼합분말의 소결성과 고용체의 상을 TMA와 XRD로써 각각 분석하였으며, 소결체의 비열과 열확산계수를 측정하여 열전도도를 구하였다. $Dy_xTi_yO_z$에서 Dy의 함량에 따라 소결성과 밀도가 변하였고 $3\;g\;Dy/cm^3\;Dy_xTi_yO_z$의 경우 $1580{\circ}C$의 소결온도에서 용융이 일어났다. $4.00\;g\;Dy/cm^3$ 소결체에는 $Dy_2TiO_5+Dy_2Ti_2O_7$의 두 상이 존재하며 $4.54\;g\;Dy/cm^3$의 경우 $Dy_2TiO_5$의 단일 상만이 존재하는 결과를 보였다. $Dy_xTi_yO_z$의 열전도도는 $25~600{\circ}C$ 범위에서 온도에 따라 큰 변화가 없으며 $1600{\circ}C$ 소결체가 1.69∼1.78 W/mK, 1550$^{\circ}C$ 소결체의 경우에는 1.49~1.55 W/mK이었다.

• 전기학회논문지
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• 제63권9호
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• pp.1233-1238
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• 2014

In this thesis, it is investigated the characteristics of Dye Sensitized Solar Cell (DSSC) according to variation of $TiO_2$ thickness (6, 12, 18, and $24{\mu}m$) and three distinct $TiO_2$ sintering temperatures (350, 450 and $550^{\circ}C$) by XRD, SEM, I-V and UV-Vis spectrophotometer. According to sintering temperature, $TiO_2$ was transformed into the anatase structure at $350^{\circ}C$, rutile structure at $550^{\circ}C$ and further into the two structure at $450^{\circ}C$. With increasing thickness up to $18{\mu}m$ and sintering temperature up to $450^{\circ}C$, respectively, the irradiance rate increased in the range of 9~26 percent and 2.80~5.10 percent. Whereas a further increase to $24{\mu}m$ and $550^{\circ}C$, the irradiance rate decrease in the range of 4~11 percent and 30~47 percent. The conversion efficiency increased in the range of 2.80~5.01 and 3.03~5.01 with increasing thickness up to $18{\mu}m$ and sintering temperature up to $450^{\circ}C$. By contrast, increase to $24{\mu}m$ and $550^{\circ}C$, the conversion efficiency decreased in the range of 3.31~5.01 and 2.80~3.89, respectively. The DSSC that thickness of $TiO_2$ were $18{\mu}m$ and sintered at $450^{\circ}C$ exhibited the most excellent characteristics, in which open-circuit voltage, short-circuit current, Fill Factor and conversion efficiency are 0.69 V, $11.4mA/cm^2$, 0.64 and 5.01%, respectively.

• 한국세라믹학회지
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• 제32권7호
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• pp.761-768
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• 1995

Double layered BaTiO3 thin films with high dielectric constant as well as good insulating property were prepared for the application to low voltage driving thin film electroluminescent (TFEL) device. BaTiO3 thin films were formed by rf-magnetron sputtering technique. Amorphous and polycrystalline BaTiO3 thin films were deposited at the substrate temperatures of room temperature and 55$0^{\circ}C$, respectively. Two kinds of films prepared under these conditions showed high resistivity and high dielectric constant. The figure of merit (=$\varepsilon$r$\times$Eb.d) of polycrystalline BaTiO3 thin film was very high (8.43$\mu$C/$\textrm{cm}^2$). The polycrystalline BaTiO3 showed a substantial amount of leakage current (I), under the high electric field above 0.5 MV/cm. The double layered BaTiO3 thin film, i.e., amorphous BaTiO3 layer coated polycrystalline BaTiO3 thin film, was prepared by the new stacking method and showed very good dielectric and insulating properties. It showed a high dielectric constant fo 95 and leakage current density of 25 nA/$\textrm{cm}^2$ (0.3MV/cm) with the figure of merit of 20$\mu$C/$\textrm{cm}^2$. The leakage current density in the double layered BaTiO3 was much smaller than that in polycrystalline BaTiO3 under the high electric field. The saturated brightness of the devices using double layered BaTiO3 was about 220cd/$m^2$. Threshold voltage of TFEL devices fabricated on double layered BaTiO3 decreased by 50V compared to the EL devices fabricated on amorphous BaTiO3.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.286-287
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• 2006

Barium titanate ($BaTiO_3$) glycolate particles were synthesized at temperature as low as $100^{\circ}C$ through glycothermal reaction by using $Ba(OH)_2{\cdot}8H_2O$ and amorphous titanium hydrous gel as precursors and ethylene glycol as solvent. The particle size and morphology of $BaTiO_3$ glycolate powders can be controlled by varying the reaction conditions such as the reaction temperature and Ba:Ti molar ratio of starting precursors. After glycothermal treatment at $220^{\circ}C$ for 24 h in 1.25:1(Ba:Ti), the average particle size of the $BaTiO_3$ glycolate powder was about 200-400 nm and low agglomeration. $BaTiO_3$ powders were formed by heat-treating the glycolate powder in air at $500-1000^{\circ}C$. As a result, the size of $BaTiO_3$ crystallites changed from around 50-300 nm. It is also demonstrated that the size and shape of $BaTiO_3$ particles investigated as a function of calcination temperature. The $BaTiO_3$ particles obtained from optimum synthesis condition were pressed, sintered and measured for the dielectric property. The $BaTiO_3$ ceramics sintered at $1250^{\circ}C$ for 2 h had 98 % of theoretical density. The ceramics have an average grain size of about $1\;{\mu}m$ and displays the high dielectric constant (~3100) and low dielectric loss (<0.1) at room temperature.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2003년도 추계종합학술대회
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• pp.995-998
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• 2003

MOCVD 법을 이용하여 TiO$_2$ 박막을 제작하여, 투과곡선을 비교적 간단하게 분석할 수 있는 포락선방법을 사용하여 기판온도에 따른 TiO$_2$ 박막의 굴절률, 소광계수 등의 광학적 상수들을 구하였다. 투과곡선의 모사를 실시하여 포락선방법으로 구한 값들이 매우 신뢰도가 높음을 입증하였다. TiO$_2$ 박막은 35$0^{\circ}C$ 에서 부터 결정화가 되기 시작하여, 40$0^{\circ}C$ 이상에서 tetragonal structure 를 갖는 anatase 상으로 완전히 결정화됨을 알 수 있다. 기판온도에 따른 증착률을 Arrhenius plot 하여 구한 활성화에너지는 reaction limited 단계에서 17.8 kcal/mol 이었다. 포락선방법을 이용하여 구한 TiO$_2$ 박막의 굴절률 (λ=632.8 nm) 은 기판온도가 40$0^{\circ}C$ 에서 $600^{\circ}C$ 로 증가함에 따라 2.19 에서 2.32 로 증가하는 추세를 나타내었고, 소광계수는 0.021 에서 0.007로 감소하는 경향을 나타내었다.

• 전기화학회지
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• 제14권1호
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• pp.27-32
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• 2011

Cr을 첨가한 $Li_4Ti_5O_{12}$의 전기화학적 특성을 고찰하였다. 산화물에 금속원자가 치환될 경우에 결정구조가 변화되며, $Li_4Ti_5O_{12}$의 전기화학적 특성이 변화하게 된다. 졸-겔법을 이용하여 $Li_4Ti_{5-x}Cr_xO_{12}$ (x = 0~0.2)를 제조하였으며, 전기로에서 $800{\sim}850^{\circ}C$로 공기중에서 12시간 동안 열처리하였다. 시료의 물리적인 특성은 TG-DTA, XRD, SEM, FT-IR을 사용하여 측정하였으며, 전기화학적인 특성은 0.01~2.0V의 범위에서 배터리충방전기를 사용하여 측정하였다. $Li_4Ti_5O_{12}$는 1C에서 169.9 mAh/g의 용량을 나타내었으며, 0.1C로 변화되었을 경우에 초기용량의 97.5%를 나타내었다. $Li_4Ti_{4.9}Cr_{0.1}O_{12}$ 시료는 1C에서 193.8 mAh/g의 용량을 보였으며, 0.1C에서는 초기용량의 98.8%를 나타내었다.

• 대한금속재료학회지
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• 제47권3호
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• pp.147-154
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• 2009

The effect of carbon addition on the microstructures and mechanical properties of $Ni_3Al$ and TiAl intermetallic alloys have been characterized. It is shown that carbon is not only an efficient solid solution strengthener in $Ni_3Al$ and TiAl, it is also an efficient precipitation strengthener by fine dispersion of carbide. Transmission electron microscope investigation has been performed on the particle-dislocation interactions in $Ni_3Al$ and TiAl intermetallics containing various types of fine precipitates. In an $L1_2$-ordered $Ni_3Al$ alloy with 4 mol.% of chromium and 0.2~3.0 mol.% of carbon, fine octahedral precipitates of $M_{23}C_6$ type carbide, which has the cube-cube orientation relationship with the matrix, appear during aging. Typical Orowan loops are formed in $Ni_3Al$ containing fine dispersions of $M_{23}C_6$ particles. In the L10-ordered TiAl containing 0.1~2.0 mol.% carbon, TEM observations revealed that needle-like precipitates, which lie only in one direction parallel to the [001] axis of the $L1_0$ matrix, appear in the matrix and preferentially at dislocations. Selected area electron diffraction (SAED) patterns analyses have shown that the needle-shaped precipitate is $Ti_3AlC$ of perovskite type. The orientation relationship between the $Ti_3AlC$ and the $L1_0$ matrix is found to be $(001)_{Ti3AlC}//(001)_{L10\;matrix}$ and $[010]_{Ti3AlC}//[010]_{L10\;matrix}$. By aging at higher temperatures or for longer period at 1073 K, plate-like precipitates of $Ti_2AlC$ with a hexagonal structure are formed on the {111} planes of the $L1_0$ matrix. The orientation relationship between the $(0001)_{Ti2AlC}//(111)_{L10\;matrix}$ is and $[1120]_{Ti2AlC}//[101]_{L10\;matrix}$. High temperature strength of TiAl increases appreciably by the precipitation of fine carbide. Dislocations bypass the carbide needles at further higher temperatures.

• 한국세라믹학회지
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• 제34권8호
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• pp.791-796
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• 1997

The influence of Ti/Sr ratio on abnormal grain growth of Nb-doped SrTiO3 was investigated. For specimens which were isothermally sintered at temperatures above 144$0^{\circ}C$, the nucleation and growth rates of abnormal grain growth were decreased with increasing Ti/Sr ratio. But the onset time of abnormal grain growth was increased with increasing Ti/Sr ratio. The cross-section of abnormally grown grains was mostly hexagonal. When the specimens were quenched in air after they reached their setting temperatures at a heating rate of 3$^{\circ}C$/min, the onset temperature of abnormal grain growth was increased with increasing Ti/Sr ratio and the final grain size was independent of Ti/Sr ratio. The cross-section of abnormally grown grains was mostly rectangular.

• 한국세라믹학회지
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• 제39권6호
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• pp.598-603
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• 2002

(M $g_{0.93}$C $a_{0.07}$)Ti $O_3$마이크로파 유전체 세라믹스에 alumine borosilicate계 유리를 5~30wt% 첨가하여 저온소결 특성과 마이크로파 유전 특성을 조사하였다. (M $g_{0.93}$C $a_{0.07}$)Ti $O_3$에 alumine borosilicate계 유리를 첨가함으로서 소결온도를 135$0^{\circ}C$에서 95$0^{\circ}C$로 낮추었으며, 유리의 첨가량이 증가함에 따라 소결밀도의 증가 및 입성장이 뚜렷이 나타났고 20~30wt%의 유리가 첨가된 영역에서는 95%의 상대밀도를 갖는 소결체를 얻을 수 있었다. (M $g_{0.93}$C $a_{0.07}$)Ti $O_3$에 20wt%의 alumino boiosilicate계 유리를 첨가함으로서 95$0^{\circ}C$에서 유전율($\varepsilon$$_{r}$)은 15~16, 품질계수(Q$\times$f)는 8000이었으며, 이때 공진주파수의 온도 계수($ au$$_{cf}$ )는 -45 ppm/$^{\circ}C$을 나타내었다.